• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.109-115
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• 2003

Quaternary Ti-Al-Si-N films were deposited on WC-Co substrates by a hybrid deposition system of arc ion plating (AIP) method for Ti-Al source and DC magnetron sputtering technique for Si incorporation. The synthesized Ti-Al-Si-N films were revealed to be composites of solid-solution (Ti, Al, Si)N crystallites and amorphous Si3N4 by instrumental analyses. The Si addition in Ti-Al-N films affected the refinement and uniform distribution of crystallites by percolation phenomenon of amorphous silicon nitride, similarly to Si effect in TiN film. As the Si content increased up to about 9 at.%, the hardness of Ti-Al-N film steeply increased from 30 GPa to about 50 GPa. The highest microhardness value (~50 GPa) was obtained from the Ti-Al-Si-N film haying the Si content of 9 at.%, the microstructure of which was characterized by a nanocomposite of nc-(Ti,Al,Si) N/a$-Si_3$$N_4$.

• Tribology and Lubricants
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• v.4 no.2
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• pp.36-43
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• 1988

Titanium carbide(TiC) and titanium nitride(TiN) flims were deposited on $Si_3N_4$-TiC composite cutting tools by chemical vapor deposition(CVD) using $TiCl_4-CH_4-H_2$ and $TiCl_4-H_2-N_2$ gas mixtures, respectively. The nonmetal to metal ratio of deposit increases with increasing $m_{C/Ti}$(mole ratio of CH$_4$ to TiCl$_4$ in the input) for TiC coatings and $m_{N/Ti}$(mole ratio of N$_2$ to TiCl$_4$ in the input) for TiN coatings. The nearly stoiahiometric films could be obtained under the deposition condition of $m_{C/Ti}$ between 1.15 and 1.61 for TiC, and that of $m_{N/Ti}$ between 25 and 28 for TiN. Also maximum microhardness of the coatings can be obtained in these ranges. The interfacial region of TiC coatings on $Si_3N_4$-TiC ceramics is wider than that of TiN coatings according to Auger depth profile analysis, which indicates good interfacial bonding for TiC. Experimental results show that TiC coatings have an randomly equiaxed structure and Columnar structure with(220) preferred orientation can be obtained for TiN coatings. And, multilayer coatings have a dense and equiaxed structure.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.321-327
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• 2001

Ti-Si-N films obtained by using RF reactive sputtering of targets with various Ti/Si ratios in a $N_2(Ar+N_2)$ gas mixture have been investigated in terms of films resistivity and diffusion barrier performance. The chemical bonding state of Si in the Ti-Si-N film which contained a higher Si content was in the form of amorphous $Si_3N_4$, producing increased film resistivity with increased $N_2$flow rate. Lowering the Si content in the deposited Ti-Si-N film favored the formation of crystalline TiN even at low $N_2$flow rates, and leads to low film resistivity. In addition increasing the N content led to Ti-Si-N films having a higher density and compressive stress, suggesting that the N content in the films appear to be one of the most important factors affecting the diffusion barrier characteristics. Consequently, we proposed the optimum composition in the range of 29~49 at.% of Ti, 6~20 at.% of Si, and 45~55 at.% of N for the Ti-Si-N films having both low resistivity and excellent diffusion barrier performance.

• Journal of the Korean Ceramic Society
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• v.33 no.12
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• pp.1421-1425
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• 1996

Sintered Si3N4 and Inconel composed of Ni(58-63%) Cr(21-25%) Al(1-17%) Mn(<1%) fe(balance) were pressurelessly joined by using Ag-Cu-Ti brazing filler metal at 950℃ and 1200℃ under N2 gas atmosphere of 1atm and their interfacial structures were investigated. In case that the reaction temperature was low as 950℃ its interfacial structure was "Inconel metal/Ti-rich phase layer/brazing filler metal layer/Si3N4 " Ti used as reactive metal existed in between inconel steel and brazing metal and moved to the interface of between brazing filler metal nd Si3N4 according as reaction temperature increased up to 1200℃. The interfacial structure of inconel steel-Si3N4 reacted at 1200℃ was ' inconel metal/Ni-rich phase layer containing of Fe. Cr and Si/Cu-rich phase layer containing of Mn and Si/Si3N4 " Cr Mn, Ni and Fe diffused to the interface of between brazing filler metal and Si3N4 and reacted with Si3N4 The most reactive components of ingredients of inconel metal were Cr and Mn. On the other hand Ti added as reactive components to Ag-Cu eutectic segregated into Ni-rich phase layer,.

• Journal of the Korean Ceramic Society
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• v.33 no.6
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• pp.686-692
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• 1996

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.111-116
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• 1998

Silicon nitride is hard and tough ceramic material. Hereby, mechanical machinability is very poor. It has also high electrical resistance. Silicon nitride of extremely high electrical resistivity becomes conductive ceramic composite by adding 30 wt% TiN. Ceramics with high electrical conductivity can be electrical discharge machined. Using by the Electrical Discharge Machining (EDM) technique. $Si_3N_4-TiN$ ceramic composite with high electrical conductivity is utilized to make metal working tool. These tool materials have severe wear problem as well as oxidation. Post HIP processing after sintering $Si_3N_4-TiN$ ceramic composites was performed. The tribological property of $Si_3N_4-TiN$ composite as a function of content of TiN was investigated in air, at room temperature. The hardness, fracture toughness, and flexural strength were compared with the wear volume. SEM observation of wear tracks can make an explanation of wear mode of $Si_3N_4-TiN$ composite.

• The Korean Journal of Ceramics
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• v.1 no.2
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• pp.101-105
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• 1995

Electrical discharge machinable $Si_3N_4$ was fabricated with the addtion of 20-60 vol% TiN by gas pressure sintering. Their sinterability, microstructure, mechanical and electrical properties were characterized as a function of the TiN content. The addition of TiN up to 20 vol% increased the flexural strength and fracture toughness as compared with those of the monolithic Si3N4. For the TiN content higher than 40 vol%, the electrical resistivity was lower than $1062\Omega$.cm. The $Si_3N_4$ with the addition of 40 vol% of TiN appears to have the optimum considerable sinterability, mechanical and electrical properties, and machinability. A microstructural analysis showed that the enhanced toughening was due to the crack deflection.

• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1089-1098
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• 1994

The effect of Si3N4 addition on the microstructure and PTCR characteristics of BaTiO3 was studied. When 0.1 mol% Sb2O3-doped BaTiO3 codoped with Si3N4 (0.1, 0.25, 0.5, 0.75, and 1 wt%, respectively) were sintered, their microstructures were changed by the amount of the liquid phase as a result of eutectic reaction at 126$0^{\circ}C$. By these microstructural changes, the specific resistivity ratio($\rho$max/$\rho$min) with Si3N4 content variation of 0.1 mol% Sb2O3-doped BaTiO3 ceramics sintered at 130$0^{\circ}C$ for 1 hour varied between 3.70$\times$102(0.1 wt% Si3N4) to 1.16$\times$103 (1wt% Si3N4).

• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.409-415
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• 1989

Si3N4-TiN electro-conductive ceramic composites with 7wt% Al2O3＋3wt% Y2O3 or 5wt% MgO as sintering aids were fabricated by pressureless sintering at 1,80$0^{\circ}C$ for 1h. The 3pt. flexural strength, KIC and Vickers hardness were measrued in order to investigate the effects of TiN on the mechanical properties. Also oxidation behavior was observed by measuring the weight gain after exposure to air at 1,10$0^{\circ}C$ for 100h. the reaction products between Si3N4 and TiN was not detected by XRD and EDS. Mechanical properties of the composites were not influenced by the addition of TiN less than 30vol%, but oxidation resistance of the composites was rapidly decreased with the amount of added TiN.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.130-130
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• 2018

산업 발전으로 특수합금들이 발달함에 따라 가공할 수 있는 새로운 절삭공구소재들이 개발되어지고 있다. 또한 공구소재보다 코팅개발이 상대적으로 더욱 효과적이기 때문에 코팅 기술 개발이 활발히 진행되고 있다. 일본에서는 새로운 코팅층 물질 개발보다는 기존의 코팅물질을 조합하거나 개량하여 성능을 향상시키는 추세이다. TiAlSiN 박막은 스퍼터링과 음극 아크 소스를 이용한 hybrid 공정을 이용하여 코팅 후 특성을 평가하였다. Ti-50at.%Al의 조성을 갖는 TiAl 합금 타겟은 음극 아크 소스를 이용하여 코팅하였다. 공정 가스는 Ar과 N2의 혼합 가스를 사용하였으며 공정 압력은 $1.0{\times}10^{-2}Torr$이었다. 음극 아크 소스에 인가된 전류는 70 A이었다. TiAlSiN 박막의 Si 함량을 조절하기 위해서 Si은 스퍼터링으로 코팅하였으며 스퍼터링 소스에 인가되는 전력의 세기를 0.29 kW ~ 1.05 kW까지 변화시켰다. 코팅 공정에 사용된 Si 타겟의 순도는 4N이다. TiAlSiN 박막의 Si 함량은 스퍼터링 전력에 따라 3.4 ~ 14.4at%까지 변화하는 것을 확인하였다. TiAlSiN 코팅층의 경도는 초미소 경도계를 이용하여 측정하였으며, Si 함량이 증가하면 TiAlSiN 박막의 경도도 증가하는 것을 확인할 수 있다. TiAlSiN 박막의 Si 함량이 9.2at.%일 때 3000 Hv 이상의 경도를 보였다. TiAlSiN 코팅층의 Si 함량이 14.4at%로 높아지면 경도가 낮아지는 현상을 보였다. TiAlSiN 박막의 Si 함량이 증가하면 내산화성이 향상되는 현상을 확인할 수 있었다.