• Title/Summary/Keyword: $Si_3N_4$ composites

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The effect of microstructure of electrical discharge machinable silicon nitride on wear resistance (방전가공용 질화규소의 미세조직이 내마모에 미치는 영향)

  • 이수완;김성호;이명호
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.1
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    • pp.111-116
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    • 1998
  • Silicon nitride is hard and tough ceramic material. Hereby, mechanical machinability is very poor. It has also high electrical resistance. Silicon nitride of extremely high electrical resistivity becomes conductive ceramic composite by adding 30 wt% TiN. Ceramics with high electrical conductivity can be electrical discharge machined. Using by the Electrical Discharge Machining (EDM) technique. $Si_3N_4-TiN$ ceramic composite with high electrical conductivity is utilized to make metal working tool. These tool materials have severe wear problem as well as oxidation. Post HIP processing after sintering $Si_3N_4-TiN$ ceramic composites was performed. The tribological property of $Si_3N_4-TiN$ composite as a function of content of TiN was investigated in air, at room temperature. The hardness, fracture toughness, and flexural strength were compared with the wear volume. SEM observation of wear tracks can make an explanation of wear mode of $Si_3N_4-TiN$ composite.

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Effect of Pressurless Annealing Temperature on the Properties of α-SiC-WC Electroconductive Ceramic Composites. (α-SiC-WC 電導性 세라믹 複合體의 特性에 미치는 無加壓 Annealing 溫度)

  • Sin, Yong Deok;Ju, Jin Yeong
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.5
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    • pp.242-242
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    • 2004
  • The composites were fabricated 61 vol.%α-α-SiC and 39vol.% WC powders with the liquid forming additives of 12wt% Al₂O₃+Y₂O₃ by pressureless annealing at 1700, 1800, 1900℃ for 4 hours. The result of phase analysis of composites by XRD revealed α-SiC(2H), WC, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density, the flexural strength, fracture toughness and Young′s modulus showed respectively the highest value of 99.4%, 375.76㎫, 5.79㎫ㆍ$m^{\frac{1}{2}}$, and 106.43㎬ for composite by pressureless annealing temperature 1900℃ at room temperature. The electrical resistivity showed the lowest value of 1.47×$10^{-3}$/Ω·㎝ for composite by pressureless annealing temperature 1900℃ at 25℃. The electrical resistivity of the α-SiC-WC composites was all positive temperature cofficient resistance (PTCR) in the temperature ranges from 25℃ to 500℃.

Mechanical Properties of the Pressureless Sintered $Al_2O_3-SiC$ Composite(1) : Dispersion Effects of SiC Powder (상압소결 $Al_2O_3-SiC$계 소결체의 기계적 성질 (I) : SiC분말의 분산효과)

  • 이홍림;김경수;이형복
    • Journal of the Korean Ceramic Society
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    • v.25 no.3
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    • pp.231-236
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    • 1988
  • In order to investigate the effect of second phase on $Al_2O_3$ matrix, SiC particles were dispersed in $Al_2O_3$ matrix as a second phase over the content range of 5 vol.% to 20 vol.%. To this mixture, $Y_2O_3$ or $TiO_2$ powders were added as a sintering additive before isostatically pressing and pressurelessly sintering at 180$0^{\circ}C$ for 90 min in $N_2$ atmosphere. With increasing SiC content, relative densities of composites were decreased but mechanical properties of composites were improvjed. In the case of adding $Y_2O_3$ as a sintering additive, maximum values of flexural strength, hardness and fracture toughness were 525 MPa, 17.1 GPa, 4.1 MPa.m1/2 respectively. In the case of adding X$TiO_2$ as a sintering additive, maximum values of flexural strength, hardness were 285 MPa, 12.1 GPa respectively. Improved mechanical properties were found to be the results of grain growth control of $Al_2O_3$ matrix and crack deflection by the second phase SiC particles.

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Quasi-Plasticity of $Si_3N_4$-BN Composites (질화규소-질화붕소 복합재료의 준소성 특성)

  • Lee, Gi-Seong;Lee, Seung-Geon;Kim-kim, Do-Gyeong
    • Korean Journal of Materials Research
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    • v.8 no.3
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    • pp.200-205
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    • 1998
  • The nature, degree, and evolution of contact damage from Hertzian contacts in silicon nitride-boron nitride composites($Si_3N_4-BN$) are investigated as a function of boron nitride content. The strong deviations of indentation stress-strain from elastic response indicate exceptional plasticity in $Si_3N_4-BN$. The absence of ring cracks or cone cracks on the surfaces is observed, indicating a high damage tolerance. Subsurface quasi- plastic deformation by shear stress is considerable and microdamage is widely distributed within the region below the contact. Shear faults associated with local microfailures play a precursor role in plasticity of this material. When boron nitride content increases, $Si_3N_4-BN$ becomes softer and more quasi-plastic.

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Synthesis and properties of $Al_2O_3-SiC$ Composites from Alkoxides III. Effect of Composite Powder Type on the Sintering Characteristics and Properties of $Al_2O_3-SiC$ Comopsites (알콕사이드로부터 $Al_2O_3-SiC$ 복합재료의 제조 및 특성 III. 복합분말의 형태에 따른 $Al_2O_3-SiC$ 복합재료의 소결 특성 및 물성)

  • 이홍림;김규영
    • Journal of the Korean Ceramic Society
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    • v.30 no.4
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    • pp.316-324
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    • 1993
  • Three types of dispersed, coated and mechanically mixed SiC reinforced Al2O3 composite powders were used to investigate the effect of composite powder type on sintering characteristics and properties of Al2O3-SiC composites. Sinterability of coated type composite powders was superior to that of other composite powders when they were pressureless sintered at 1500~1$700^{\circ}C$ for 2h in Ar atmosphere. However, sinterabilities (>98% TD) of each type of composite powders were similar when they were hot pressed at 180$0^{\circ}C$ for 1h under 30MPa in N2 atmosphere. SiC powders were randomly distributed in the specimen prepared from dispersed type composite powders, whereas homogeneously distributed for coated type specimens. It was found that SiC powders inhibited the grain growth of Al2O3, and fracture toughness was increased by the increment of crack growth resistance due to residual stress by secondary SiC particles within Al2O3 grains.

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Mechanical Properties of the Pressureless Sintered Al2O3-SiC Composites(2) : Dispersion Effects of SiC Whisker (상압소결한 Al2O3-SiC계 소결체의 기계적 성질(2) : SiC Whisker의 분산효과)

  • 김경수;이홍림
    • Journal of the Korean Ceramic Society
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    • v.25 no.6
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    • pp.704-712
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    • 1988
  • In order to investigate the effect of the second phase on Al2O3 matrix, SiC whisker was dispersed in Al2O3 matrix as a second phase over the content range of 5vol% to 20vol%. To this mixture, Y2O3 or TiO2 powder was added as a sintering additive before isostatically pressing and pressureless sintering at 1800-190$0^{\circ}C$ for 90min in N2 atmosphere. With increasing SiC whisker content, relative densities of composites were decreased and the grain growth of Al2O3 was restricted. When Y2O3 was added as a sintering aid the sintering temperature was 180$0^{\circ}C$, the maximum values of flexural strength, hardness and fracture toughness were 537MPa, 12.1GPa, 3.7MPa.m1/2, respectively. However, when the sintering temperature was elevated to 190$0^{\circ}C$, maximum values of flexural strength, hardness and fracture toughness were 453MPa, 17.5GPa, 4.9MPa.m1/2, respectively. Improved mechanical properties are assumed to be attributed to the crack deflection by the second phase SiC whisker and whisker pullout mechanism.

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Influence of Cu Composition on the Mechanical Properties and Microstructure of Ti-Al-Si-Cu-N thick films (Ti-Al-Si-Cu-N 후막의 Cu 조성에 따른 기계적 특성과 미세구조 변화에 관한 연구)

  • Yeon-Hak Lee;Sung-Bo Heo;In-Wook Park;Daeil Kim
    • Journal of the Korean institute of surface engineering
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    • v.56 no.5
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    • pp.335-340
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    • 2023
  • Quinary component of 3㎛ thick Ti-Al-Si-Cu-N films were deposited onto WC-Co and Si wafer substrates by using an arc ion plating(AIP) system. In this study, the influence of copper(Cu) contents on the mechanical properties and microstructure of the films were investigated. The hardness of the films with 3.1 at.% Cu addition exhibited the hardness value of above 42 GPa due to the microstructural change as well as the solid-solution hardening. The instrumental analyses revealed that the deposited film with Cu content of 3.1 at.% was a nano-composites with nano-sized crystallites (5-7 nm in dia.) and a thin layer of amorphous Si3N4 phase.