• Journal of Advanced Marine Engineering and Technology
• /
• 제27권6호
• /
• pp.783-789
• /
• 2003

An experimental method to investigate the fracture strength and fracture toughness for the silicon nitrides sintered at various sintering temperature is established. The erosion rate for these materials in the various concentration of NaOH solution is also investigated. In result, the fracture strength of Si3N4 is decreased with the increase of sintering temperature. On the other hand, the fracture toughness KIC is increased with the increase of sintering temperature. The erosion rate of silicon nitride in the NaOH solution depend largely on the grain size and the concentration of NaOH solution. The erosion rate of silicon nitride sintered at $1800^{\circ}C$ was much higher than that at $1950^{\circ}C$. These results are due to the unique columnar structure of silicon nitride.

• E2M - 전기 전자와 첨단 소재
• /
• 제9권10호
• /
• pp.991-1000
• /
• 1996

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb$_{2}$3/O$_{3}$) (PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol ratio of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20), #4(40:40:20), #5(40:50:10), #6(35:45:20) and #7(30:50:20) respectively. The spin-coated PZT-PNN films were heat-treated at 350.deg. C for decomposition of residual organics, and were sintered from 450.deg. C to 750.deg. C for crystallization. The substrates, such as Pt and Pt/TiN/Ti/TiN/Si were used for the spin coating of PZT PNN films. The perovskite phase was observed in the PZT-PNN films heat-treated at 500.deg. C. The crystalline of the PZT-PNN films was optimized at the sintering of 700.deg. C. By the result of AES analysis, It is confirmed that the films of TiN/Ti/TiN was a good diffusion barrier and that co-diffusion into the each films was not observed.

• The Korean Journal of Ceramics
• /
• 제7권1호
• /
• pp.36-40
• /
• 2001

In order to fabricate uncooled IR sensors for pyroelectric applications, multilayered thin films of Pt/PbTiO$_3$/Pt/Ti/Si$_3$N$_4$/SiO$_2$/Si and thermally isolating membrane structures of square-shaped/cantilevers-shaped microstructures were prepared. Cavity was also fabricated via direct silicon wafer bonding and etching technique. Metallic Pt layer was deposited by ion beam sputtering while PbTiO$_3$ thin films were prepared by sol-gel technique. Micromachining technology was used to fabricate microstructured-membrane detectors. In order to avoid a difficulty of etching active layers, silicon-nitride membrane structure was fabricated through the direct bonding and etching of the silicon wafer. Although multilayered thin film deposition and device fabrications were processed independently, these could b integrated to make IR micro-sensor devices.

• 한국세라믹학회지
• /
• 제24권6호
• /
• pp.561-571
• /
• 1987

In case of glass ceramics and powder preparation from the metalakoxide solutions, metalakoxide solutions with a various species of alkoxy groups have unique characteristics. Therefore, in this study, the mixing ability of homogeneous sol, gel morphology and physical properties of gels were investigated by the changes in terms of the different four alkoxy groups, CH3-, C2H5-, i-C3H7-n-C4H9-, along with the catalyst for the purpose of the observation about the homogenous transition range from sol to gel. As a result, when the fixed condition was mol ratio of H2O/Si(OR)4=2.0 and variables were batch composition and addition amount of catalyst, the characteristics of Tetra-normal-Butoxysilane and Tetra-iso-propoxysilane systems had very narrow sol-gel conversion region than Tetramethoxysilane and Tetraethoxysilane system. And silicon-alkoxide, systems having narrow sol-gel conversion region were enlarged by addition of catalyst. In viewpoint of the weight loss of gel produced by hydrolysis of silicon alkoxide systems with different four alkoxy groups, the amounts of weight loss of gel containing large molecular alkoxy groups were much more than those of small molecular alkoxy group.

• 한국공작기계학회논문집
• /
• 제17권4호
• /
• pp.104-111
• /
• 2008

The objective of this study is to evaluate micro end-milling characteristics and tool wear behavior of AlN-hBN composites. First, AlN based composites with hBN contents in the range of 10 to 20vol% were prepared by hot-pressing. Vickers hardness and flexural strength of the prepared composite specimens were measured and compared according to the vol% of hBN variations. Then, cutting force variations were measured and analyzed using a tool dynamometer during the micro end-milling experiments; and machined surface shapes and roughness were investigated using a 3D non-contact type surface profiler. After micro end-milling, worn tools were investigated using a tool microscope and SEM images. From the experimental results, it can be observed that the cutting forces decreased, and surface qualities were improved with increasing hBN contents. At low content of hBN, tool chipping was observed; and tool wear rate decreased with increasing hBN contents. The results of this study insist that proper machining conditions, including tool wear behavior investigation, should be determined for the micro end-milling of AlN-hBN composites for its further application.

• 한국레이저가공학회지
• /
• 제12권4호
• /
• pp.12-16
• /
• 2009

The engineering ceramic is one of the materials advantageous in various conditions with high strength, endurance at high temperature, abrasion resistance and corrosion resistance, etc. However, due to high strength and high brittleness, ceramic incurs high costs and long time on finishing process required after sintering. So a process for obtaining wanted measurements of them has been studied using the high temperature which makes ceramics softened and heat affected recently. This study makes an estimate of laser-assisted machining (LAM) if an economically practical process for manufacturing precision silicon nitride ceramic parts using laser beam. In this study, mechanical properties of silicon nitride at high temperature were observed. And during the LAM, it was observed that cutting force and tool wear were reduced and oxidation of machined surface was increased according to a increase of laser power.

• The Korean Journal of Ceramics
• /
• 제3권4호
• /
• pp.274-278
• /
• 1997

(Ba, Sr) TiO$_3$(BST) thin films were prepared on RuO$_2$/Si substrates by rf magnetron sputtering and annealing was followed at temperatures ranging from 550 to 80$0^{\circ}C$ in $N_2$or $O_2$atmosphere. The effects of annealing conditions on the properties of BST film deposited on RuO$_2$bottom electrodes were investigated. It was found that the crystallinity. surface roughness, and grain size of BST films vary with the annealing temperature but they are not dependent upon the annealing atmosphere. The flat region in the current-voltage (I-V) curves of BST capacitors shortened with increasing annealing temperature under both atmospheres. This is believed to be due to the lowering of potential barrier caused by unstable interface and the increase of charge The shortening of the flat region by $O_2$annealing was more severe than that by $N_2$-annealing. As a result, there was no flat region when the films were annealed at 700 and 80$0^{\circ}C$ in $O_2$atmosphere. The dielectric properties of BST films were improved by annealing in either atmosphere. however, a degradation with frequency was observed when the films were annealed at relatively high temperature under $O_2$atmosphere.

• 한국전기전자재료학회논문지
• /
• 제21권12호
• /
• pp.1077-1082
• /
• 2008

To fabricate a multi-layered piezoelectrics/electrodes structure, the piezoelectrics should be sintered at the temperature lower than $950^{\circ}C$ to use the silver electrode, which is cheaper than the electrodes containing noble metals such as Pd and Pt. Therefore, in this study, we modified the composition of $Pb(Zr,Ti)O_3$-based material as $(Pb_{0.98}Cd_{0.02})(Ni_{1/3}Nb_{2/3})_{0.25}Zr_{0.35}Ti_{0.4}O_3$ to lower the sintering temperature and to improve the piezoelectric properties. Small amount of $MnCO_3$, $SiO_2$, and $Pb_3O_4$ were also added to lower the sintering temperature of the ceramic. The prepared raw powders were mixed by using a ball mill for 24 hours. And then the mixed powders were calcinated for 2 hours at $800^{\circ}C$. The calcinated powders were again crushed with the ball mill for 72 hours. The final powders were pressed for making the shape of ${\emptyset}15\;mm$ disk. The disk-type samples were sintered at temperature range of $850{\sim}950^{\circ}C$. The crystal phases of the sintered specimens were perovskite structure without secondary phases. All of the measured electrical properties such as electromechanical coupling coefficients ($k_p$), mechanical quality factors ($Q_m$), and piezoelectric charge constants ($d_{33}$) were decreased with decreasing the sintering temperatures. The electrical properties measured at the sample sintered at $950^{\circ}C$ were 54% of $k_p$, 503 of $Q_m$, and 390 pC/N of $d_{33}$, respectively. These properties were considered to be fairly good for the application of multi-layered piezoelectric generators or actuators.

• Journal of Electrical Engineering and Technology
• /
• 제13권4호
• /
• pp.1638-1643
• /
• 2018

Multi-layer ceramic capacitors as decoupling capacitor were fabricated by dielectric composition with a high dielectric constant. The fabricated decoupling capacitors were embedded in the PCB of the 10G RF transceiver module and evaluated for the characteristics of electrical noise by the level of AC input voltage. In order to further improve the electrical properties of the $BaTiO_3$ based composite, glass frit, MgO, $Y_2O_3$, $Mn_3O$, $V_2O_5$, $BaCO_3$, $SiO_2$, and $Al_2O_3$ were used as additives. The electrical properties of the composites were determined by various amounts of additives and optimum sintering temperature. As a result of the optimized composite, it was possible to obtain a density of $5.77g/cm^3$, a dielectric constant of 1994, and an insulation resistance of $2.91{\times}10^{12}{\Omega}$ at an additive content of 5wt% and a sintering temperature of $1250^{\circ}C$. After forming a $2.5{\mu}m$ green sheet using the doctor blade method, a total of 77 layers were laminated and sintered at $1180^{\circ}C$. A decoupling capacitor with a size of $0.6mm(W){\times}0.3mm(L){\times}0.3mm(T)$ (width, length and thickness, respectively) and a capacitance of 100 nF was embedded using a PCB process for the 10G RF Transceiver modules. In the range of AC input voltage 400mmV @ 500kHz to 2200mV @ 900kHz, the embedded 10G RF Transceiver modules evaluated that it has better electrical performance than the non-embedded modules.

• 한국분말야금학회:학술대회논문집
• /
• 한국분말야금학회 2002년도 제3회 최신 분말제품 응용기술 Workshop
• /
• pp.25-37
• /
• 2002

The most important industrial application of gamma radiation in characterizing green compacts is the determination of the density. Examples are given where this method is applied in manufacturing technical components in powder metallurgy. The requirements imposed by modern quality management systems and operation by the workforce in industrial production are described. The accuracy of measurement achieved with this method is demonstrated and a comparison is given with other test methods to measure the density. The advantages and limitations of gamma ray densitometry are outlined. The gamma ray densitometer measures the attenuation of gamma radiation penetrating the test parts (Fig. 1). As the capability of compacts to absorb this type of radiation depends on their density, the attenuation of gamma radiation can serve as a measure of the density. The volume of the part being tested is defined by the size of the aperture screeniing out the radiation. It is a channel with the cross section of the aperture whose length is the height of the test part. The intensity of the radiation identified by the detector is the quantity used to determine the material density. Gamma ray densitometry can equally be performed on green compacts as well as on sintered components. Neither special preparation of test parts nor skilled personnel is required to perform the measurement; neither liquids nor other harmful substances are involved. When parts are exhibiting local density variations, which is normally the case in powder compaction, sectional densities can be determined in different parts of the sample without cutting it into pieces. The test is non-destructive, i.e. the parts can still be used after the measurement and do not have to be scrapped. The measurement is controlled by a special PC based software. All results are available for further processing by in-house quality documentation and supervision of measurements. Tool setting for multi-level components can be much improved by using this test method. When a densitometer is installed on the press shop floor, it can be operated by the tool setter himself. Then he can return to the press and immediately implement the corrections. Transfer of sample parts to the lab for density testing can be eliminated and results for the correction of tool settings are more readily available. This helps to reduce the time required for tool setting and clearly improves the productivity of powder presses. The range of materials where this method can be successfully applied covers almost the entire periodic system of the elements. It reaches from the light elements such as graphite via light metals (AI, Mg, Li, Ti) and their alloys, ceramics ($AI_20_3$, SiC, Si_3N_4, $Zr0_2$, ...), magnetic materials (hard and soft ferrites, AlNiCo, Nd-Fe-B, ...), metals including iron and alloy steels, Cu, Ni and Co based alloys to refractory and heavy metals (W, Mo, ...) as well as hardmetals. The gamma radiation required for the measurement is generated by radioactive sources which are produced by nuclear technology. These nuclear materials are safely encapsulated in stainless steel capsules so that no radioactive material can escape from the protective shielding container. The gamma ray densitometer is subject to the strict regulations for the use of radioactive materials. The radiation shield is so effective that there is no elevation of the natural radiation level outside the instrument. Personal dosimetry by the operating personnel is not required. Even in case of malfunction, loss of power and incorrect operation, the escape of gamma radiation from the instrument is positively prevented.