• 한국재료학회지
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• 제6권4호
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• pp.428-435
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• 1996

초미립 SiC분말과 SiC platelet을 2차성으로 Si3N4에 첨가하여 SiC/Si3N4 하이브리드 복합체를 가압소결로 제조한 후 2차상의 영향을 조사한 결과핫프레스법을 이용한 경우 SiC platelet은 Si3N4 기지 복합채의 치밀화를 저해하지 않고 초미립의 SiC 첨가는 Si3N4의 입성장을 효과적으로 억제하여 미세한 $\beta$-Si3N4의 grain을 형성함을 관찰하였다. 초미립 SiC첨가를 통한 복합체의 강도 증진은 상대적으로 $\beta$-Si3N4입자의 미세화에 의한 인성의 저하를 유도하나 SiC platelet을 첨가하여 급격한 강도 저하 없이 높은 인성을 갖는 하이브리드 복합체를 제조할 수 있었으며 SiC/Si3N4 하이브리드 복합체의 인성증진은 elongated $\beta$-Si3N4와 platelet SiC의 debonding에 의한 grain pull-out 영향임을 알 수 있었다.

• 한국분말재료학회지
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• 제6권1호
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• pp.18-35
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• 1999

Phase equilibria in the system Si3N4-TiC-TiCxN1-x-C-N were determined by thermodynamic calculations (CALPHAD-method). The reaction peaction paths for Si3N4-TiC and SiC-TiC composites in the Ti-Si-C-n system were simulated at I bar N2-pressure and varying terpreatures. At a temperature of 1923 K two tie-triangles (TiC0.34N0.66+SiC+C and TiC0.13N0.87+SiC+Si3N4) and two 2-phase fieds (TiCxN1-x+SiC; 0.13

• 한국세라믹학회지
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• 제37권2호
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• pp.152-157
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• 2000

Si3N4/SiC nanocomposite ceramics containing 5 wt%dispersed SiC particles were prepared by gas-pressure-sintering at 200$0^{\circ}C$ under nitrogen atmosphere. SiC particles with average sizes of 0.2 and 0.5${\mu}{\textrm}{m}$ were used, and the effect of the SiC particle size on the microstructure was investigated. The addition of SiC particles effectively suppressed the growth of the Si3N4 matrix grains. The effect of grain growth inhibition was higher in the nanocomposites dispersed with fine SiC. SiC particles were dispersed uniformly inside Si3N4 matrix grains and on grain boundaries. When the fine SiC particles were added, large fraction of the SiC particles was trapped inside the grains. On the other hand, when the large SiC particles were added, most of the SiC particles were located on grain boundaries. Typically, the fraction of SiC particles located at grain boundaries was higher in the specimen prepared from $\beta$-Si3N4 than in the specimen prepared from $\alpha$-Si3N4.

• 한국결정성장학회지
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• 제6권3호
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• pp.386-391
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• 1996

$Si_{3}N_{4}$에 평균입경이 270 nm인 SiC 분말을 0, 10, 20, 30, 40 vol% 첨가하여 고온 가압소결법으로 $Si_{3}N_{4}/SiC$ 초미립복합재료를 제조하였다. 소결후 기지상인 ${\alpha}-Si_{3}N_{4}$는 ${\beta}-Si_{3}N_{4}$로 상전이하였으며, 이차상인 ${\beta}-SiC$는 변화가 없었다. 소결조제의 첨가에 의한 입계결정상은 검출되지 않았다. SiC의 첨가량이 많아짐에 따라 $Si_{3}N_{4}$ 결정립성장은 억제되어 미세한 결정입이 나타났으며, 작은 임자는 기지상 임내에 큰 SiC는 임계에 존재하였다. SiC 첨가에 따라 파괴강도는 약간 증가후 감소하였으며, 파괴인성은 감소하였고, 경도는 직선적으로 증가하였다.

• 한국세라믹학회지
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• 제30권12호
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• pp.999-1006
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• 1993

Si3N4(p)-SiC(p) composites were prepared by gas pressure sintering at 190$0^{\circ}C$ for 1 hour. $\alpha$-SiC with average particle size of 0.48${\mu}{\textrm}{m}$ were dispersed from zero to 50vol% in $\alpha$-Si3N4 with average particle size of 0.5${\mu}{\textrm}{m}$. Y2O3-Al2O3 system was used as sintering aids. When 10vol% of SiC was added to Si3N4, optimum mechanical properties were observed; relative density of 98.8%, flextural strength of 930MPa, fracture toughness of 5.9MPa.m1/2 and hardness value of 1429kg/$\textrm{mm}^2$. Grain growth of $\beta$-Si3N4 was inhibited as the amount of added SiC was increased. SiC particles were found inside the $\beta$-Si3N4 intragrains in case of 10, 20 and 30vol%SiC added composites.

• 한국세라믹학회지
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• 제19권2호
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• pp.121-126
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• 1982

This paper deals with the $Si_3N_4$-bonded SiC refractory in terms of its microstructure development during nitridation. When mixture of SiC grains and fine Si power is fired under nitrogen atmosphere, an interlocking network of $Si_3N_4$ whiskers is formed by nitridation of Si. It is found that the strength of $Si_3N_4$-bonded SiC refractory is soley due to the physical nature of this interlocking whiskers. At the initial stage of nitridation, $Si_3N_4$ whisker forms in very thin and long shape and, with further nitridation, it becomes thicker with diameters up to 0.35$\mu\textrm{m}$. It is found that the mechanical strength of $Si_3N_4$-bonded SiC refractory depends on the degree of nitridation and the development of microstructure.

• 한국세라믹학회지
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• 제23권1호
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• pp.67-73
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• 1986

SiC and $SiC-Si_3N_4$ powder were synthesized via the carbiding and carbiding-nitriding reaction of Jecheon quartz respectively using graphite as a reducing agent. $\beta$-SiC+($\alpha$+$\beta$)-$Si_3N_4$ composite was obtained by the carbiding-nitriding reaction of Jecheon quartz-graphite mixture at 1, 35$0^{\circ}C$ in $H_2$ atmosphere. $\beta$-SiC+($\alpha$+$\beta$)-$Si_3N_4$ composite was obtained by the carbidint-nitriding reaction of Jecheon quartz-graphite mixture at 1, 35$0^{\circ}C$ in $N_2-H_2$ atmosphere. The ratio of $\beta$-SiC+($\alpha$+$\beta$)-$Si_3N_4$ content in a produced composite could be controlled by adjusting the reaction time and gaseous mixture.

• 한국세라믹학회지
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• 제38권1호
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• pp.22-27
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• 2001

$\beta$-Si$_3$N$_4$종자입자 첨가가 소결조제로 Y-Mg-Si-Al-O-N계 oxynitride glass를 사용하여 일축가압 소결을 행한 SiC-Si$_3$N$_4$복합재료의 미세구조와 기계적 특성에 미치는 영향을 고찰하였다. 길게 자란 $\beta$-Si$_3$N$_4$입자들과 등방성의 $\beta$-SiC 입자들이 균일하게 분포된 미세구조를 얻었다. $\beta$-Si$_3$N$_4$종자입자 함량이 증가함에 따라 SiC-Si$_3$N$_4$복합재료의 강도와 파괴인성이 증가하였고, 이는 복합화에 기인하는 결함크기의 감소와 길게 자란 $\beta$-Si$_3$N$_4$입자에 의한 균열가교 및 균열회절 등에 기인하였다. SiC-70 wt% Si$_3$N$_4$복합재료의 대표적인 강도와 파괴인성은 각각 770 MPa과 6.2 MPa.m$^{1}$2/ 이었다.

• 한국세라믹학회지
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• 제43권9호
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• pp.582-587
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• 2006

Decomposition behavior of $ferro-Si_3N_4$was investigated with varying temperature and holding time in mud components for high temperature refractory applications. Porosities gradually increased with increasing temperature and holding time due to the carbothermal reduction of $Si_3N_4\;and\;SiO_2$. Silicon monoxide (SiO) as a intermediate resulted from evaporation of $Si_3N_4\;and\;SiO_2$ reacted with C sources to generate needle-like ${\beta}-SiC$ and Fe in $Si_3N_4$ acted as a catalyst in order to enhance growth of SiC grain with the preferred orientation. SiC generation yield increased with increasing holding time, all of the $Si_3N_4\;and\;SiO_2$ affected on SiC formation up to 2h. However, SiC generation was only dependent on residual $SiO_2$ over 2h, because the carbothermal reduction reaction of $Si_3N_4$ was no longer possible at that time.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2008년도 추계학술대회 초록집
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• pp.83-85
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• 2008

4성분계 Ti-Si-C-N 코팅막은 $TiCl_4$, $SiH_4$, $CH_4$, Ar, 그리고 $N_2$ 가스 혼합체를 이용하여 RF-PECVD 기법에 의해 Si 와 AISI 304 기판위에 합성하였다. Ti-C-(0.6)-N(0.4) 조성의 코팅막에 Si를 첨가함으로 Ti(C,N) 결정질은 줄어들고, Si3N4 및 SiC 비정질상이 나타났다. Ti-Si(9.2 at.%)-C-N의 조성에서 나노 크기의 nc-Ti(C,N) 결정질을 비정질 a-Si3N4/SiC가 둘러싸고 있는 형태의 나노 복합체를 나타내었다. 경도 24 Gpa의 Ti-C-N 코팅막은 Si를 첨가함으로 Ti-Si(9.2 at.%)-C-N 조성에서 46 Gpa의 최고 경도를 나타내었으며, 마찰계수의 경우에도 Ti-C-N 코팅막에 Si를 첨가함으로 크게 낮아졌다.