• Journal of Welding and Joining
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• v.21 no.1
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• pp.107-113
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• 2003

Joining of $Si_3N_4$ to $Si_3N_4$ with crystallized glass solder was studied. $SiO_2-Al_2O_3-MgO$ glass with $P_2O_5$ as a crystallizing reagent was used as a solder. To improve the hish temperature toughness of joined specimen, two stage heat treatment was applied to Joined sample for the crystallization of joined layer, Two factors, i.e. thickness of soldered layer and crystallization were taken and thier effects on joining strength were investigated by a SEM-EDX observation of joined interface and bending strength both at room and elevated temperatures. Obtained results are summarized as follows: (1) Nitrogen diffused from $Si_3N_4$ to solder during the Joining process. Average amount of nitrogen in soldered layer depended on the thickness of the soldered layer and increased with decrease of the thickness. (2) Joining strength of the specimen having a thinner soldered layer was stronger than that of thicker layer. This can be mainly attributed to the difference of the nitrogen content in the soldered layer. (3) Higher content of nitrogen in solder brought forth higher viscosity of the solder. Hence the crystallization of the solder become more difficult in thinner layer of the solder than thicker one. (4) Thus, the effect of crystallization was evaluated mostly by the thicker layer specimen. Crystallization of soldered layer improved markedly the fracure strength of joining at higher temperatures than the softening temperature of glass solder.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.1
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• pp.7-11
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• 2015

In this study, $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film were prepared on glass substrate by DC/RF magnetron sputtering method. To prevent interfacial reaction between Ag and ITO layer, Ti buffer layer was inserted. Optical properties and sheet resistance were studied depending on laminating times of each multi-layered film especially in visible ray. The simulation program, EMP (essential macleod program), was adopted and compared with experimental data to expect the experimental result. It was found out that the transmittance of the first stacked $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film was more than 90%. However, with increasing stacking times, the optical properties of $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film get worse. Consequently, Ti layer is good for oxidation barrier, but too many uses of this layer may have an adverse effect to optical properties of TCO film.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1996.11a
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• pp.6-6
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• 1996

Ceramic based nanocomposite, in which nano-sized ceramics and metals were dispersed within matrix grains and/or at grain boundaries, were successfully fabricated in the ceramic/cerarnic and ceramic/metal composite systems such as $Al_2O_3$/SiC, $Al_2O_3$/$Si_3N_4$, MgO/SiC, mullite/SiC, $Si_3N_4/SiC, $Si_3N_4$/B, $Al_2O_3$/W, $Al_2O_3$/Mo, $Al_2O_3$/Ni and $ZrO_2$/Mo systems. In these systems, the ceramiclceramic composites were fabricated from homogeneously mixed powders, powders with thin coatings of the second phases and amorphous precursor composite powders by usual powder metallurgical methods. The ceramiclmetal nanocomposites were prepared by combination of H2 reduction of metal oxides in the early stage of sinterings and usual powder metallurgical processes. The transmission electron microscopic observation for the $Al_2O_3$/SiC nanocomposite indicated that the second phases less than 70nm were mainly located within matrix grains and the larger particles were dispersed at the grain boundaries. The similar observation was also identified for other cerarnic/ceramic and ceramiclmetal nanocornposites. The striking findings in these nanocomposites were that mechanical properties were significantly improved by the nano-sized dispersion from 5 to 10 vol% even at high temperatures. For example, the improvement in hcture strength by 2 to 5 times and in creep resistance by 2 to 4 orders was observed not only for the ceramidceramic nanocomposites but also for the ceramiclmetal nanocomposites with only 5~01%se cond phase. The newly developed silicon nitride/boron nitride nanocomposites, in which nano-sized hexagonal BN particulates with low Young's modulus and fracture strength were dispersed mainly within matrix grains, gave also the strong improvement in fracture strength and thermal shock fracture resistance. In presentation, the process-rnicro/nanostructure-properties relationship will be presented in detail. The special emphasis will be placed on the understanding of the roles of nano-sized dispersions on mechanical properties.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.832-838
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• 1995

The densifying behavior of ultrafine amorphous Si3N4 (about 20 nm)-$\beta$-SiC (about 40~80 nm) powders (O2 : 1.3~15wt%, 0$700^{\circ}C$ within 15 sec and then immediately cooled and held at 135$0^{\circ}C$ for 10 min in N2 atmosphere without resorting to additives using a Xe image heating apparatus. Using an ultrafine pure Si3N4 powder with particle size less than 30nm, further more, mixed with an appropriate amount of $\beta$-SiC, was found to be advantageous to obtain uniform and homogeneous microstructure. In addition, ultrafine Si3N4 powders were also proved to be effective as sintering additive on densifying large sized Si3N4 powder compacts.

• Journal of the Korean Ceramic Society
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• v.25 no.4
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• pp.380-384
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• 1988

This investigation includes nitridation phenomena of silicon powder compacts in air. Nitridation reaction condition has been provided with using silicon nitride bed and active carbon additive. Reaction products are Oxynitride, $\alpha$-Si3N4, and $\beta$-Si3N4, Oxynitride(Si2N2O) phase in formed at outer surface layer ofsilicon powder compacts. $\alpha$-Si3N4, and $\beta$-Si3N4 are formed at inner region of powder compacts. Microstructural observation indicates that nitridation mechanism in this work is the same as conventional nitridation mechanism nitrogen gas.

• Tribology and Lubricants
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• v.11 no.4
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• pp.35-44
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• 1995

Within the practical ranges of speed and load, the formation of transfer films and the consequent effects on the friction and wear behavior of ceramic materials during repeated pass sliding contact were studied. These tests were done using $Al_{2}O_{3}$, SiC and $Si_{3}N_{4}$ with the cylinder-on-flat test configuration. The three pairings behaved differently, even if some wear mechanisms were common to the three systems. The $Al_{2}O_{3}$ pair showed the least wear in overall conditions, followed by the $Si_{3}N_{4}$ pair in harder sliding conditions. The wear of SiC was very high at severe loading. In case of $AL_{2}O_{3}$ and $Si_{3}N_{4}$, the transfer film, whenever formed, is strongly attached, enough to resist being wiped off by the slider. As a consequence, the formation of this f'fim leads to a decrease in the wear rate because of the protecting role of the film. The presence of the film at the contact interface also results in high friction. Also, the wear rate of each ceramics is related to the frictional power provided by load, speed and friction.

• Journal of the Korean Ceramic Society
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• v.31 no.2
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• pp.129-136
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• 1994

Si3N4 with 6w/o Y2O3 and 1.5w/o Al2O3 has been gas pressure sintered and its densification behavior and the effect of the sintering variables on the microstructure and mechanical properties were investigated. Densification rate was higher at temperature below 1775$^{\circ}C$ and between 187$0^{\circ}C$ and 195$0^{\circ}C$ than between 1775$^{\circ}C$ and 187$0^{\circ}C$. The faster densification at temperature between 187$0^{\circ}C$ and 195$0^{\circ}C$ was thought to be due to the increased amount of liquid phase resulting from the increased amount of Si3N4 dissolving in the liquid. $\beta$-Si3N4 and Y-disilicate at temperatures below 1775$^{\circ}C$, and only $\beta$-Si3N4 at 187$0^{\circ}C$ and above were detected by XRD analysis. Three different two-step schedules were employed to obtain sintered body with above 99% theoretical density and to investigate the effect of the sintering variables on the density, the microstructure and the mechanical properties of the sintered body. The sintered density did not change with the heating rate, and the microstructure became coarser as the temperature increased. The strength decreased with the width of $\beta$-Si3N4 grain, while the fracture toughness increased with the square root of it. A ceramic cutting tool made of the sintered body showed an uniform flank wear after the cutting test.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.3
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• pp.576-581
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• 2005

In this paper. the a-Si:H TFT using ferroelectric of $SrTiO_3$ as a gate insulator is fabricated on glass. High k gate dielectric is required for on-current, threshold voltage and breakdown characteristics of TFT Dielectric characteristics of ferroelectric are superior to $SiO_2$ and $Si_3N_4$. Ferroelectric increases on-current and decreases threshold voltage of TFT and also ran improve breakdown characteristics.$SrTiO_4$ thin film is deposited by e-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at $150^{\circ}C\~600^{\circ}C$. Dielectric constant of ferroelectric is about 60-100 and breakdown field is about IMV/cm. In this paper, the TFT using ferroelectric consisted of double layer gate insulator to minimize the leakage current. a-SiN:H, a-Si:H (n-type a-Si:H) are deposited onto $SrTiO_3$ film to make MFNS(Metal/ferroelectric/a-SiN:H/a-Si:H) by PECVD. In this paper, TFR using ferroelectric has channel length of$8~20{\mu}m$ and channel width of $80~200{\mu}m$. And it shows that drain current is $3.4{\mu}A$at 20 gate voltage, $I_{on}/I_{off}$ is a ratio of $10^5\~10^8,\;and\;V_{th}$ is$4\~5\;volts$, respectively. In the case of TFT without having ferroelectric, it indicates that the drain current is $1.5{\mu}A$ at 20gate voltage and $V_{th}$ is $5\~6$ volts. If properties of the ferroelectric thin film are improved, the performance of TFT using this ferroelectric thin film can be advanced.

• Journal of the Korean Ceramic Society
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• v.36 no.2
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• pp.210-219
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• 1999

The fundamental dispersion property of Si2N4 and a combination of AlN and Nd2O3 as sintering additives in a variety of organic solvents such as alcohols, hydrocarbons, ketones, and ethers was investigated. The stabilization mechanism and interaction between organic functional groups of the various organic additives were studied to clarify the dispersibility of the ceramic particles in the nonaqueous suspending medium. characterization of the suspensions was based mainly on electrokinetic sonic amplitude(ESA) measurements and the flow curves obtained from the rheological studies as well as estimated Hamaker constants. It was found that the contribution of electrostatic repulsive forces to the Si3N4, AlN and Nd2O3 stabilization in organic media is appreciably greater than anticipated and is dependent on the physicochemical properties of organic solvents.

• Journal of the Korean Ceramic Society
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• v.45 no.2
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• pp.94-98
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• 2008

Silicon nitride($Si_3N_4)$ is one of the most widely used structural ceramic materials. However silicon nitride is difficult to sinter because of its strong covalent bonding characteristics. In this study, $Si_3N_4$ ceramics were fabricated by spark plasma sintering process with $Y_2O_3$ and $Al_2O_3$ addition to improve the sinterability and the mechanical properties and their phase transformation behavior, microstructure and mechanical properties were evaluated. Fully densified $Si_3N_4$ ceramics could be obtained by spark plasma sintering process at a lower temperature than conventional sintering method. The formation of network microstructure was affected by the addition of $Al_2O_3$ because it could accelerate a to ${\alpha}$ to ${\beta}$ phase transformation of $Si_3N_4$. As a result, the mechanical properties depended on amounts of $Al_2O_3$ addition. The hardness value increased with increasing ${\alpha}$-phase fraction, but fracture toughness value increase with increasing ${\beta}$-phase fraction.