• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2000년도 추계학술대회논문집 - 한국공작기계학회
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• pp.386-391
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• 2000

It is known that Si$_3$N$_4$ceramic insert has less hardness than A1$_2$O$_3$ceramic insert. But Si$_3$N$_4$ceramic insert has not only high toughness and strength but also low thermal expansion coefficient, which makes it has longer tool life under thermal stress condition. In this study, commercial Si$_3$N$_4$ ceramic insert and home-made SiC-Si$_3$N$_4$ceramic insert which has different sintering time and chemical composition is tested under various cutting conditions. The experimental result is compared in terms of tool life and cutting force. Generally, As the cutting speed and the feed rate increased, the cutting force and the flank wear increased too. The performance of SiC-Si$_3$N$_4$ceramic insert shows the possibility to be a new ceramic tool.

• 대한기계학회논문집A
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• 제38권10호
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• pp.1117-1123
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• 2014

본 연구는 균열 치유 물질로 알려진 $SiO_2$ 나노 콜로이드의 첨가량을 달리한 $Si_3N_4$를 소결하여, 경면 연마한 시험편 표면에 $SiO_2$ 나노 콜로이드를 코팅하여 1273 K, 공기중에서 1시간 균열치유 처리하였다. 그 후, 마모시험편은 1073, 1273 및 1573 K에서 10분간 열처리하여 시험을 실시하였다. $SiO_2$ 나노 콜로이드를 코팅하여 열처리한 표면은 무코팅 표면보다 약간 거칠게 나타났으며, 열처리 온도에 따라 표면의 산화 정도는 조도와 뚜렷한 상관관계는 가지지 않았다. 그리고 마찰계수, 마모손실 및 굽힘강도는 표면 거칠기와 관계가 없었다. SKD11 상대재에 대하여 연삭마모의 거동을 보였으며, 마찰계수와 마모손실은 비례하였다. 또한, 강도가 클수록 마찰계수가 작고, 마모손실도 작았다. $SiO_2$ 나노 콜로이드 량의 증가에 따라서 마찰계수는 증가하다가 일정하게 되었지만, 마모손실은 증가하였다. 또한 열처리 온도가 증가함에 따라서 마찰계수는 약간 증가하는 경향을 나타내었다.

• 한국세라믹학회지
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• 제28권3호
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• pp.189-196
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• 1991

Si(OC2H5)4, commercial AlN and Y2O3 powder were used as the precusor of Si3N4, AlN, Y2O3, respectively. After Si3N4 powder was synthesized by carbothermal reduction and nitridation at 135$0^{\circ}C$ for 13h in N2 atmosphere, characteristics of synthesized powder and the ceramics sintered at 178$0^{\circ}C$ for 1h under 30MPa were investigated. In order to evaluate the reliability of sintered body, Weibull modulus was investigated. Premixing of carbon black as a reduction agent had no effect on Si(OH)4 formation, and Si3N4 powder synthesized from Si(OC2H5)4 was $\alpha$-Si3N4 single phase. Mechanical properties of sintered body were measured as follows : flexural strength ; 750MPa, fracture toughness ; 3.71Mn/3/2, hardness : 17.4GPa, thermal shock resistence temperature ; $600^{\circ}C$. Flexural strength at room temperature was 750MPa and was retained up to 110$0^{\circ}C$. The Weibull modulus of sintered body was 10.7.

• 한국재료학회지
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• 제2권1호
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• pp.76-82
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• 1992

$TEOS-O_3$ 산화막은 깔개층 물질에 따라 증착속도가 변하는 특성을 나타낸다. 본 논문에서는 $TEOS-O_3$ 산화막의 깔개층 물질 의존성 이외에도 배선 밀도, 배선 간격에 따라 증착속도가 달라지는 패턴 의존성에 대하여 조사하였다. 또한 $TEOS-O_3$ 산화막의 깔개층 물질 의존성 및 패턴 의존성을 줄이기 위해 다층 배선에서 1차 배선후에 깔개층, 즉 TEOS-base 프라즈마 산화막 및 $SiH_4-base$ 프라즈마 산화막을 증착했을 때 $TEOS-O_3$ 산화막의 증착 특성을 조사하였다. 그리고 그 깔개층 물질에 $N_2$ 프라즈마 처리를 했을 때 $TEOS-O_3$ 산화막의 증착 특성에 대해 조사하였다. 그 결과 $TEOS-O_3$ 산화막에서 기판 위에 배선 밀도와 배선 간격에 따른 의존성은 깔개층물질이 $SiH_4-base$ 일때보다 TEOS-base 프라즈마 산화막인 경우 $N_2$ 프라즈마 처리를 하면 깔개층 물질 표면이 O-Si-N화 되므로써 의존성이 사라지게 된다.

• 대한기계학회논문집A
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• 제35권3호
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• pp.267-272
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• 2011

본 연구는 $SiO_2$ 나노 콜로이드 첨가량에 따르는 $Si_3N_4$ 세라믹스의 마멸 특성을 평가하였다. 시험 편은 35 MPa, 2123 K의 질소 가스 분위기 1시간동안 소결하였다. 마멸 시험은 링 블록 시험기를 사용 하였으며, 시험 조건은 직경 35 mm인 링의 회전속도50 rpm, 하중 9.8 N, 실험중의 대기 온도 293 K이 었다. 세라믹스의 마멸계수는 약 1.0, 마멸손실은 약 0.02 mm이었다. 본 연구에 사용된 시험편 중에서 1.3 wt% $SiO_2$ 나노 콜로이드가 첨가된 시험편은 가장 낮은 마멸계수와 마멸 손실을 나타내어, 최상의 마멸 저항성을 나타내었다. 이것은 가장 높은 비커스 경도와 굽힘 강도를 나타내었다. 마멸계수는 경도 와 굽힘 강도에 역비례 관계를 보였다.

• 한국재료학회지
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• 제28권12호
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• pp.709-713
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• 2018

To improve the etch rate of $Si_3N_4$ thin film, $H_2SiF_6$ is added to increase etching rate by more than two times. $SiO_3H_2$ is gradually added to obtain a selectivity of 170: 1 at 600 ppm. Moreover, when $SiO_3H_2$ is added, the etching rate of the $SiO_2$ thin film increases in proportion to the radius of the wafer. In $Si_3N_4$ thin film, there is no difference in the etching rate according to the position. However, in the $SiO_2$ thin film, the etching rate increases in proportion to the radius. At the center of the wafer, the re-growth phenomenon is confirmed at a specific concentration or above. The difference in etch rates of $SiO_2$ thin films and the reason for regrowth at these positions are interpreted as the result of the flow rate of the chemical solution replaced with fresh solution.

• 전자공학회논문지A
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• 제29A권4호
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• pp.22-27
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• 1992

The cyclic voltammogram characteristics at the magnetized SrO${\cdot}6Fe_{2}O_{3}$ ceramics/(($10^{-3}$M KCI + p-Si powders) and /(($10^{-4}$M CsNO$_3$ + n-GaAs powders) suspension interfaces have been studied using the microelectrophoresis and the cyclic voltammetric method. The negatively charged ions are specifically absorbed on the virgin and the magnetized SrO${\cdot}6Fe_{2}O_{3}$ ceramics surfaces. The zeta potentials of the p-Si and n-GaAs colloidal semiconductors are + 41mV and -44.8mV, respectively. The magnetization effects act as potential barriers at the magnetized SrO${\cdot}6Fe_{2}O_{3}$ interfaces. The positivelely charged p-Si and the negatively charged n-GaAs colloidal semiconductors act as potential barriers at the virgin SrO${\cdot}6Fe_{2}O_{3}$ interfaces. On the other hand, the charged p-Si and n-GaAs colloidal semiconductors act as potential barrier scavengers at the magnetized SrO${\cdot}6Fe_{2}O_{3}$ interfaces. The magnetization effects and the charged colloidal semiconductor effects are irreversible and interdependent.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.24-25
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• 2008

The effect of heat treatment in $HfO_2$ as charge trap with $SiO_2/Si_3N_4/SiO_2$ as tunnel oxide layer in capacitors has been investigated. Rapid thermal annealing (RTA) were carried out at the temperature range of 600 - $900^{\circ}C$. It is found that all devices carried out heat treatment have large threshold voltage shift Especially, device performed heat treatment at $900^{\circ}C$ has been confirmed the largest memory window. Also, Threshold voltage shift of device used conventional $SiO_2$ as tunnel oxide layer was smaller than that with $SiO_2/Si_3N_4/SiO_2$.

• 전자공학회논문지A
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• 제29A권9호
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• pp.29-35
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• 1992

Dielectric thin film of N/O (Si$_{3}N_[4}/SIO_{2}$) for high density stacked dynamic-RAM cell was formed by LPCVD and oxidation(Dry & pyrogenic oxidation methods) of the top Si$_{3}N_[4}$ film. The thickness, structure and composition of this film were measured by ellipsometer, high frequency C-V meter, high resolution TEM, AES, and SIMS. The thickness limit of Si$_{3}N_[4}$ film in making thin N/O structure layer was 7nm. In this experiment, the film with thinner than 7nm was not thick enough as oxygen diffusion barrier, and oxygen punched through the film and interfacial oxidation occurred at the phase boundary between Si$_{3}N_[4}$ and polycrystalline silicon electrode.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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• pp.221-224
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• 2000

We have successfully demonstrated metal-ferroel-ectric-insulator-semiconductor (MFIS) devices using Al/LiNbO$_{3}$/SiN/Si structure. The SiN thin films were made into metal -insulator- semiconductor (MIS) devices by thermal evaporation of aluminum source in a dot away on the surface. The interface property of MFIS from 1MHz & quasistatic C-V is good and the memory window width is about 1.5V at 0.2V/s signal voltage sweep rate. The gate leakage current density of MFIS capacitors using a aluminum electrode showed the least value of 1x10$^{-8}$ A/$\textrm{cm}^2$ order at the electric field of 300㎸/cm. And the XRD patterns shows the probability of applications of LN for MFIS devices for FeRAMs on amorphous SiN buffer layer.