• 한국정밀공학회지
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• 제18권9호
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• pp.82-88
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• 2001

In order to fulfil the requirements of the various performance profiles of ceramic cutting tools, six different SiC-based ceramics have been fabricated by hot-pressing (SiC--${Si}_3 {N}_4$composites) or by hot-pressing and subsequent annealing (monolithic SiC and SiC-TiC composites). Correlation between the annealing time and the corresponding microstructure and the mechanical properties of resulting ceramics have been investigated. The grain size of both ${Si}_3 {N}_4$and SiC in SiC-${Si}_3 {N}_4$composites increased with the annealing time. Monolithic SiC has the highest hardness, SiC-TiC composite the highest toughness, and the SiC-${Si}_3 {N}_4$composite the highest strength among the ceramics investigated. The hardness of SiC-${Si}_3 {N}_4$composites was relatively independent of the grain size, but dependent on the sintered density. The cutting performance of the newly developed SiC-based ceramic cutting tools will be described in Part 2 of this paper.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2000년도 추계학술대회 논문집
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• pp.898-901
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• 2000

It is known that Si3N4 ceramic insert has less hardness than Al2O3 ceramic insert. But Si3N4 ceramic insert has not only high toughness and strength but also low thermal expansion coefficient, which makes it has longer tool life under thermal stress condition. In this study, commercial Si3N4 ceramic insert and home-made SiC-Si3N4 ceramic insert which has different sintering time and chemical composition is tested under various cutting conditions. The experimental result is compared in terms of tool life and cutting force. Generally, As the cutting speed and the feed rate increased, the cutting force and the flank wear increased too. The performance of SiC-Si3N4 ceramic insert shows the possibility to be a new ceramic tool.

• 한국세라믹학회지
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• 제29권9호
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• pp.681-688
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• 1992

Ultrafine Si3N4 and Si3N4+SiC mixed powders were synthesized through thermal plasma chemical vapor deposition(CVD) using a hybrid plasma, which was characterized by the supersposition of a radio-frequency plasma and arc jet. The reactant SiCl4 was injected into an arc jet and completely decomposed in a hybrid plasma, and the second reactant CH4 and/or NH3 mixed with H2 were injected into the tail flame through double stage ring slits. In the case of ultrafine Si3N4 powder synthesis, reaction efficiency increased significantly by double stage injection compared to single stage one, although crystallizing behaviors depended upon injection speed of reactive quenching gas (NH3+N2) and injection method. For the preparation of Si2N4+SiC mixed powders, N/C composition ratio could be controlled by regulating the injection speed of NH3 and/or CH4 reactant and H2 quenching gas mixtures as well as by adjusting the reaction space.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2000년도 추계학술대회논문집 - 한국공작기계학회
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• pp.386-391
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• 2000

It is known that Si$_3$N$_4$ceramic insert has less hardness than A1$_2$O$_3$ceramic insert. But Si$_3$N$_4$ceramic insert has not only high toughness and strength but also low thermal expansion coefficient, which makes it has longer tool life under thermal stress condition. In this study, commercial Si$_3$N$_4$ ceramic insert and home-made SiC-Si$_3$N$_4$ceramic insert which has different sintering time and chemical composition is tested under various cutting conditions. The experimental result is compared in terms of tool life and cutting force. Generally, As the cutting speed and the feed rate increased, the cutting force and the flank wear increased too. The performance of SiC-Si$_3$N$_4$ceramic insert shows the possibility to be a new ceramic tool.

• Journal of the Korean Physical Society
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• 제73권9호
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• pp.1356-1361
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• 2018

Replacing conventional Si diodes with SiC diodes in Si insulated gate bipolar transistor (IGBT) modules is advantageous as it can reduce power losses significantly. Also, the fast switching nature of the SiC diode will allow Si IGBTs to operate at their full high-switching-speed potential, which at present conventional Si diodes cannot do. In this work, the electrical test results for Si-IGBT/4HSiC-Schottky hybrid substrates (hybrid SiC substrates) are presented. These substrates are built for two voltage ratings, 1.7 kV and 3.3 kV. Comparisons of the 1.7 kV and the 3.3 kV Si-IGBT/Si-diode substrates (Si substrates) at room temperature ($20^{\circ}C$, RT) and high temperature ($H125^{\circ}C$, HT) have shown that the switching losses in hybrid SiC substrates are miniscule as compared to those in Si substrates but necessary steps are required to mitigate the ringing observed in the current waveforms. Also, the effect of design variations on the electrical performance of 1.7 kV, 50 A diodes is reported here. These variations are made in the active and termination regions of the device.

• 한국재료학회지
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• 제12권1호
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• pp.48-53
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• 2002

$Al_2O_3-SiC$ and $Al_2O_3-SiC$-TiC composite powders were prepared by SHS process using $SiO_2,\;TiO_2$, Al and C as raw materials. Aluminum powder was used as reducing agent of $SiO_2,\;TiO_2$ and activated charcoal was used as carbon source. In the preparations of $Al_2O_3-SiC$, the effect of the molar ratio in raw materials, compaction pressure, preheating temperature and atmosphere were investigated. The most important variable affecting the synthesis of $Al_2O_3-SiC$ was the molar ratio of carbon. Unreactants remained in the product among all conditions without compaction. The optimum condition in this reaction was $SiO_2$: Al: C=3: 5: 5.5, 80MPa compaction pressure under Preheating of $400^{\circ}C$ with Ar atmosphere. However there remains cabon in the optimum condition. The effect of $TiO_2$ as additive was investigated in the preparations of $Al_2O_3-SiC$. As a result of $TiO_2$ addition, $Al_2O_3-SiC$-TiC composite powder was prepared. The $Al_2O_3$ powder showed an angular type with 8 to $15{\mu}m$, and the particle size of SiC powder were 5~$10{\mu}m$ and TiC powder were 2 to $5{\mu}m$.

• 한국세라믹학회지
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• 제33권11호
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• pp.1209-1216
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• 1996

MoSi2-Al2O3 composites were prepared by thermal explosion mode of self-propagating high temperature syn-thesis (SHS) using element powders of MoO3 Mo Si and Al. The combustion products of MoSi2 which have 10, 20, 30 and 40 wt% Al2O3 showed the molten state in the range of Mo to MoO3 6:1-9.5:1, 2:1-8:1, 1:1-5:1, and 1:1-3:1 (molar ratio) respectively. The combustion products which made least seperation the molten phase from the slag phase were in Mo/MoO3=9, 5:1, 8:1, 5:1 and 3:1 (molar ratio) respectively. Particles size of MoSi2 and Al2O3 in the combustion product were decreased as the molar ratio of Mo to MoO3 increase. By XRD analysis only MoSi2 and $\alpha$-Al2O3 peaks were identified in the combusion products, In case of MoSi2 containing 20wt% Al2O3 5.1wt% Al existed into MoSi2 grains and 30.7wt% Si and 7.7wt% Mo existed into Al2O3 grains. The relative density of MoSi2 containing 10, 20, 30 and 40 wt% Al2O3 were 82.7, 85.2, and 81.9% respectively. The fracture strength of MoSi2-Al2O3 composites increased with increasing Al2O3 and that of MoSi2-20wt% Al2O3 composite was 195 MPa.

• 대한기계학회논문집A
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• 제33권7호
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• pp.652-657
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• 2009

Strength characteristics of $Si_3N_4$ composite ceramics has been studied as functions of heat-treatment temperature and additive $SiO_2$. $SiO_2$ colloidal could significantly increase the bending strength. Crack healing temperature decreased 300 K by additive $TiO_2$. Bending strength of specimen added $SiO_2$ is higher than that of non-added $SiO_2$. Moreover, bending strength of specimen with $SiO_2$ colloidal coating is much higher that of non-coated specimen. In in-situ observation, crack-healed specimen at 1,573 K shows phenomenon like a fog on the surface. By SPM, both crack-healed specimen, non-coating and coating of $SiO_2$ colloidal, at 1,273 K were healed completely but both of 1,573 K exist crack. This was made by evaporation of $SiO_2$ at high temperature. Crack-healing materials of $Si_3N_4$ composite ceramics is crystallized $Y_2Si_2O_7$, $Y_2Ti_2O_7$ and $SiO_2$. A large amount of Si and O, and little C were detected by EPMA. Si and O increase but C decreases according to heat treatment temperature. Specimens with additive $SiO_2$ were more detected Si and O than that of non-additive $SiO_2$. Specimen with $SiO_2$ colloidal coatings were much more detected O.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2001년도 추계 학술발표강연 및 논문개요집
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• pp.151-151
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• 2001

• 한국세라믹학회지
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• 제37권11호
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• pp.1091-1096
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• 2000

본 연구에서는 기상 반응법을 이용하여 TMS(Tetramethylsilane:Si($CH_3$)$_4$)와 NH$_3$그리고 H$_2$의 혼합기체로부터 반응 온도 1000~120$0^{\circ}C$ 및 입력비(NH$_3$/Si($CH_3$)$_4$) 1~3의 조건에서 초미분의 SiC-Si$_3$N$_4$복합 분말을 합성하였다. 합성되어진 복합 분말들의 결정상의 변화와 평균 입경을 알아보기 위해 XRD와 TEM 분석을 행한 결과, 구형의 비정질 분말이 형성되었으며, 입자의 크기는 약 70~130nm이었다. 입자의 크기는 입력비에 관계없이 거의 일정하였으나 반응 온도가 증가함에 따라서 감소하였다. FT-IR과 EA 분석 결과, 합성되어진 분말은 Si, N, C, 그리고 H로 이루어진 화합물임을 확인할 수 있었다. 또한 입력비가 다른 조건에서 합성되어진 분말을 $N_2$분위기 하에서 155$0^{\circ}C$로 2시간 열처리를 행한 결과, 낮은 입력비인 경우 $\beta$-SiC, $\alpha$-Si$_3$N$_4$와 $\beta$-Si$_3$N$_4$의 결정상들이 혼재하였으나, 높은 입력비인 경우는 결정화 후 $\alpha$-Si$_3$N$_4$상만이 존재하였다.