• Korean Journal of Mineralogy and Petrology
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• v.33 no.1
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• pp.11-18
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• 2020

High-pressure synchrotron X-ray powder diffraction experiments were performed on natural illite (K_0.65Al₂(Al_0.65Si_3.35)O₁₀(OH)₂) using diamond anvil cell (DAC) under two different pressure transmitting media (PTM), i.e., water and ME41 (methanol:ethanol = 4:1 by volume). When using water as PTM, occasional heating was applied up to about 250℃ while reaching pressure up to 2.7 GPa in order to promote both hydrostatic conditions and intercalation of water molecules into the layer. When using ME41, pressure was reached up to 6.9 GPa at room temperature. Under these conditions, illite did not show any expansion of interlayer distance or phase transitions. Pressure-volume data were used to derive bulk moduli (K₀) of 45(3) GPa under water and 51(3) GPa under ME41 PTM. indicating no difference in compressibility within the analytical error. Linear compressibilities were then calculated to be β^a = 0.0025, β^b = 0.0029, β^c = 0.0144 under ME41 PTM showing the c-axis is ca. six times more compressible than a- and b-axes. These elastic behaviors of illite were compared to muscovite, one of its structural analogues.

• Journal of Veterinary Clinics
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• v.27 no.1
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• pp.93-96
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• 2010

We describe a case of enterolithiasis in an eight-year-old male Grant's zebra (Equus burchelli boehmi) that died after a 10-day history of depression, anorexia, dehydration and colic. On necropsy, an enterolith was discovered at the conjunction of the descending colon and the rectum. The spherical enterolith weighed 1,660 g and was $13.5cm{\times}8cm$ in size. According to scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS), the nidus consisted primarily of $SiO_2$ with outer layers of magnesium and phosphate. The formation of enteroliths is closely related to diet. We suggest that this captive zebra's diet, which consisted primarily of alfalfa hay with mineral supplements, was the cause of enterolithiasis in this case. This is the first report of enterolithiasis in a captive equid in Korea. Our findings provide information valuable for the development of dietary guidelines to prevent enterolithiasis in captive wild equids.

• Journal of the Mineralogical Society of Korea
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• v.20 no.1 s.51
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• pp.1-6
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• 2007

Hectorite was synthesized by a two-step hydrothermal process from $Mg(OH)_{2}$, water glass (${\sim}30\;wt%\;SiO_{2}$) and Li-compound at $90{\pm}5^{\circ}C$. The product shows excellent dispersion and swelling properties. The mixture of the starting materials was heated in a glass vessel for the first reaction with continuous stirring and the pH of the solution was adjusted to $6{\sim}8$, resulting in the formation of a precursor of hectorite. The excess salt components were washed out from the resulting slurry and then was matured in the glass vessel for the 2nd reaction. Li compound was added during the reaction. After a 10 h retention, the gel of hectorite was formed. The XRD pattern of the synthesized one was coincided with that of natural hectorite and SEM study revealed uniform grains 50 m in diameter. The d001 basal spacing of the product moved from 12 to $17.4\;{\AA}$ after glycolation treatment. The measured value of CEC and the swelling capacity was 90 cmol/kg and $60{\sim}70\;mL/2\;g$, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.159-159
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• 1999

니켈 산화물 박막을 전자비임 증착법으로 기판온도는 RT~25$0^{\circ}C$의 범위에서 제작하였다. 제작시 초기 베이스 압력은 2$\times$10-6mbar로 하고 산소주입후 작업진공도를 3$\times$10-4mbar로 유지하여 증착하였다. 제작시 기판온도에 따라 제작된 시료들은 각각 X선회절장치(XRD)로 막의 구조과 그림과 같이 입방체 구조 또는 팔면체구조를 갖음을 알 수 있었으며 막의 표면형상은 SEM을 이용하여 분석하였다. 각각의 여러 기판온도에 따라 제작된 니켈 산화물 박막의 전기 화학적인 특성을 분석하기 위해 순환전압전류법을 이용하였다. 또한, 전기적인 광학소자로써의 특성을 분석하기 위해 UV-Vis 광분광기를 사용하여 투과율을 측정하여 그 특성을 알아보았다. 순환전압전류법에 의한 각 시료에 대한 박막의 전기화학적 특성은 0.5M KOH 전해질 수용액에서 기판온도가 150~20$0^{\circ}C$로 제작된 니켈 산화물 박막이 다른 온도에서 제작된 시료들보다 높은 전기화학적 안정성을 보임을 알 수 있었다. 마찬가지로 광학적 특성에서 착색과 탈색의 순환과정시 분광광도계에서 나타나는 광투과율을 비교해 보면 100~20$0^{\circ}C$에서 제작된 니켈 산화물 박막이 가역적인 착탈색의 색변화가 현저하게 나타남을 알 수 있었다. 결과적으로 광학적 특성 및 전기화학적 안정성 분석으로 인해 막의수명과 전기적착색 물질의 특성면에서 증착시 기판온도가 150~20$0^{\circ}C$에서 제작된 시료가 가장 내구성면에서 막의 이온 누적이 적고 활성적인 광투과율의 성질을 갖는다는 것이다. 이와같이 니켈산화물 박막제작시 기판온도가 전기적착색물질의 특성과 내구성에 큰 영향을 미침을 분석할 수 있었다.electron Microscopy)과 AFM(Atomim Force microscopy)으로 증착박 표면의 topology와 roughness를 관찰하였다. grain의 크기는 10nm에서 150nm이었고 증착막의 roughness는 4.2nm이었다. 그리고 이 산화막에 전극을 형성하여 유전 상수와 손실률 등을 측정하였다. 이와 같이 plasma를 이용한 3-beam에 의한 증착은 금속의 산화막을 얻는데 유용한 기술로 광학 재료 및 유전 재료의 개발 및 연구에 많이 사용될 것으로 기대된다.소분압 조건에서 RuO2의 형성을 관찰하였으며, 이것은 열역학적인 계산을 통해서 잘 설명할 수 있었다.0$\mu\textrm{m}$, 코일간의 간격은 100$\mu\textrm{m}$였다. 제조된 박막 인덕터는 5MHz에서 1.0$\mu$H의 인덕턴스를 나타내었으며 dc current dervability는 100mA까지 유지되었다. CeO2 박막과 Si 사이의 결함때문이라고 사료된다.phology 관찰결과 Ge 함량이 높은 박막의 입계가 다결정 Si의 입계에 비해 훨씬 큰 것으로 나타났으며 근 값도 증가하는 것으로 나타났다. 포유동물 세포에 유전자 발현벡터로써 사용할 수 있음으로 post-genomics시대에 다양한 종류의 단백질 기능연구에 맡은 도움이 되리라 기대한다.다양한 기능을 가진 신소재 제조에 있다. 또한 경제적인 측면에서도 고부가 가치의 제품 개발에 따른 새로운 수요 창출과 수익률 향상, 기존의 기능성 안료를 나노(nano)화하여 나노 입자를 제조, 기존의 기능성 안료에 대한 비용 절감 효과등을 유도 할 수 있다. 역시 기술적인 측면에서도 특수소재 개발에 있어 최적의 나노 입자 제어기술 개발 및 나노입자를 기능성 소재로 사용하여 새로운 제품의 제조와 고압 기상 분사기술의 최적

• Journal of the Korean earth science society
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• v.29 no.3
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• pp.221-245
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• 2008

The precambrian granitic gneiss and porphyroblastic gneiss are widely distributed in the Gwangyang-Hadong area of Korea. This study focuses on the geochemical properties and metamorphic P-T conditions of these gneisses. These gneisses are plotted according to granodiorite domain on an IUGS silica-alkali diagram. Geochemical properties of major elements suggest that these rocks are of the sub-alkalic rock series, and were farmed from S-type magmas which were generated in a syn-collision tectonic environment. The amounts of trace elements (Zn, Sc, Sr, V, etc.) decreased as $SiO_2$ concentrations increased. Almandine and spessartine mol%'s and XFe are higher in garnet rims, while pyrope mol%'s are higher in the garnet cores. This seems to be the result of garnet growth and retrogressive metamorphism. Metamorphic zones are divided into sillimanite-cordierite, sillimanite, garnet, and biotite zones. Metamorphic P-T conditions estimated from the gneisses indicate high temperature and low to medium pressure metamorphism (689-757$^{\circ}C$, 5.0-5.6 kbar), followed by medium temperature, low pressure retrorade metamorphism (579-628$^{\circ}C$, 3.1-4.5 kbar), and overprinted retrogade metamorphism (502-558$^{\circ}C$, 1.6-2.3 kbar).

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• v.50 no.1
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• pp.13-26
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• 2024

Objectives: The aim of this study was to perform a comparative analysis of the ultrastructural and chemical composition of sialoliths, tonsilloliths, and antroliths and to describe their growth pattern. Materials and Methods: We obtained 19 specimens from 18 patients and classified the specimens into three groups: sialolith (A), tonsillolith (B), and antrolith (C). The peripheral, middle, and core regions of the specimens were examined in detail by histology, micro-computed tomography (micro-CT), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy, and transmission electron microscopy (TEM). Results: In the micro-CT, group A showed alternating radiodense and radiolucent layers, while group B had a homogeneous structure. Group C specimens revealed a compact homogeneous structure. Histopathologically, group A showed a laminated, teardrop-shaped, globular structure. Group B demonstrated degrees of immature calcification of organic and inorganic materials. In group C, the lesion was not encapsulated and showed a homogeneous lamellar bone structure. SEM revealed that group A showed distinct three layers: a peripheral multilayer zone, intermediate compact zone, and the central nidus area; groups B and C did not show these layers. The main elemental components of sialoliths were O, C, Ca, N, Cu, P, Zn, Si, Zr, F, Na, and Mg. In group B, a small amount of Fe was found in the peripheral region. Group C had a shorter component list: Ca, C, O, P, F, N, Si, Na, and Mg. TEM analysis of group A showed globular structures undergoing intra-vesicular calcification. In group B, bacteria were present in the middle layer. In the outer layer of the group C antrolith, an osteoblastic rimming was observed. Conclusion: Sialoliths had distinct three layers: a peripheral multilayer zone, an intermediate compact zone and the central nidus area, while the tonsillolith and antrolith specimens lacked distinct layers and a core.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.11a
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• pp.3-4
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• 2000

Many researchers are interested in the synthesis and characterization of carbon nitride and diamond-like carbon (DLq because they show excellent mechanical properties such as low friction and high wear resistance and excellent electrical properties such as controllable electical resistivity and good field electron emission. We have deposited amorphous carbon nitride (a-C:N) thin films and DLC thin films by shielded arc ion plating (SAIP) and evaluated the structural and tribological properties. The application of appropriate negative bias on substrates is effective to increase the film hardness and wear resistance. This paper reports on the deposition and tribological OLC films in relation to the substrate bias voltage (Vs). films are compared with those of the OLC films. A high purity sintered graphite target was mounted on a cathode as a carbon source. Nitrogen or argon was introduced into a deposition chamber through each mass flow controller. After the initiation of an arc plasma at 60 A and 1 Pa, the target surface was heated and evaporated by the plasma. Carbon atoms and clusters evaporated from the target were ionized partially and reacted with activated nitrogen species, and a carbon nitride film was deposited onto a Si (100) substrate when we used nitrogen as a reactant gas. The surface of the growing film also reacted with activated nitrogen species. Carbon macropartic1es (0.1 -100 maicro-m) evaporated from the target at the same time were not ionized and did not react fully with nitrogen species. These macroparticles interfered with the formation of the carbon nitride film. Therefore we set a shielding plate made of stainless steel between the target and the substrate to trap the macropartic1es. This shielding method is very effective to prepare smooth a-CN films. We, therefore, call this method "shielded arc ion plating (SAIP)". For the deposition of DLC films we used argon instead of nitrogen. Films of about 150 nm in thickness were deposited onto Si substrates. Their structures, chemical compositions and chemical bonding states were analyzed by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and infrared spectroscopy. Hardness of the films was measured with a nanointender interfaced with an atomic force microscope (AFM). A Berkovich-type diamond tip whose radius was less than 100 nm was used for the measurement. A force-displacement curve of each film was measured at a peak load force of 250 maicro-N. Load, hold and unload times for each indentation were 2.5, 0 and 2.5 s, respectively. Hardness of each film was determined from five force-displacement curves. Wear resistance of the films was analyzed as follows. First, each film surface was scanned with the diamond tip at a constant load force of 20 maicro-N. The tip scanning was repeated 30 times in a 1 urn-square region with 512 lines at a scanning rate of 2 um/ s. After this tip-scanning, the film surface was observed in the AFM mode at a constant force of 5 maicro-N with the same Berkovich-type tip. The hardness of a-CN films was less dependent on Vs. The hardness of the film deposited at Vs=O V in a nitrogen plasma was about 10 GPa and almost similar to that of Si. It slightly increased to 12 - 15 GPa when a bias voltage of -100 - -500 V was applied to the substrate with showing its maximum at Vs=-300 V. The film deposited at Vs=O V was least wear resistant which was consistent with its lowest hardness. The biased films became more wear resistant. Particularly the film deposited at Vs=-300 V showed remarkable wear resistance. Its wear depth was too shallow to be measured with AFM. On the other hand, the DLC film, deposited at Vs=-l00 V in an argon plasma, whose hardness was 35 GPa was obviously worn under the same wear test conditions. The a-C:N films show higher wear resistance than DLC films and are useful for wear resistant coatings on various mechanical and electronic parts.nic parts.

• Korean Journal of Environmental Agriculture
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• v.38 no.4
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• pp.273-280
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• 2019

BACKGROUND: The reclaimed lands for agricultural use managed by the Korean government is consisted of 17,145 hectares of lands under construction and 13,384 hectares of completed lands. In order to utilize these reclaimed lands as competitive agricultural complexes, the government is preparing to develop comprehensive development plans for multiple purposes. For rational land-use planning and soil management, information of the soil chemical properties is necessary. METHODS AND RESULTS: From 2013 to 2016, soil samples were collected from 85 representative sampling sites of the reclaimed lands and analyzed for soil chemical properties including electric conductivity (EC), pH, soil organic matter (SOM), and nutrients. The annual mean soil EC ranged from 5.1 to 8.3 dS m^-1 and have continued to decrease over the years (estimation equation with EC as dependent and year as independent variable was y =0.0736x² - 1.4985x + 9.8305, R² = 0.9753). The pH ranged from 7.3 to 7.6, which was higher than the optimum range (5.5~7.0) for agricultural soils. Soil organic matter (8 to 11 g kg^-1) was lower level than the optimum range (20~30 kg^-1). Available silicate (Av.SiO₂) ranged from 169 to 229 mg kg^-1, which was close to the minimum content (≥157 mg kg^-1) for rice paddy field. Available phosphate (Av.P₂O₅) content (24~39 mg kg^-1) was lower than the optimum range (80~120 mg kg^-1) for rice paddy field. CONCLUSION: For efficient agricultural use of reclaimed lands under government management, our results suggest that the application of organic matter and supplying deficient nutrients as well as desalinization is required.

• Korean Journal of Materials Research
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• v.2 no.2
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• pp.110-118
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• 1992

When CVD-W films deposited on the reactively sputter-deposited TiN(${\circled1}$), the $NH_3$-RTP (rapid themal processed) TiN(${\circled2}$), and the furnace-annealed TiN submitate (${\circled3}$) by $SiH_4$, reduction, deposition rate is in the order of ${\circled1}>{\circled2}>{\circled3}$ and incubation period of W nucleation is in the order of ${\circled1}{\leq}{\circled2}<{\circled3}$. The longest incubation period of nucleation and lowest deposition rate for the CVD-W on the annealed TiN is due to the incorporation of oxygen from the nitrogen ambient containing some oxygen as contaminant into the TiN film. The higher W deposition rate and the lower incubation period of W nucleation on the RTP-TiN substrate in comparison with those on the sputtered TiN substrate seem to be due to a negative effect of the high compressive stress of the RTP-TiN on the nucleation and growth of W. Also the thickness uniformity of the W film deposited on the TiN substrate by $SiH_4$ reduction turns out to be better than that by $H_2$ reduction.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.