• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.33-36
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• 2012

In this study, the thickness effects of $Al_2O_3$ layer on the sensing properties of $SiO_2/Al_2O_3$ (OA) stacked membrane were investigated using electrolyte-insulator-semiconductor (EIS) structure for high quality pH sensor. The $Al_2O_3$ layers with a respective thickness of 5 nm, 15 nm, 23 nm, 50 nm, and 100 nm were deposited on the 5-nm-thick $SiO_2$ layers. The electrical characteristics and sensing properties of each OA membranes were investigated using metal-insulator-semiconductor (MIS) and EIS devices, respectively. As a result, the OA stacked membrane with 23-nm-thick $Al_2O_3$ layer shows the excellent characteristics as a sensing membrane of EIS sensor, which can enhance the signal to noise ratio.

• Journal of the Korean Ceramic Society
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• v.28 no.7
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• pp.561-567
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• 1991

Submicron ${\alpha}-SiC$ powder with $Al_2O_3$ addition was hot-pressed under the controlled heating and pressurizing schedule. $SiO_2$ layer on ${\alpha}-SiC$ powder was effective for the sintering of ${\alpha}-SiC$ powder when $Al_2O_3$ was used as an additive. Applying of pressure under the controlled schedule accelerated the rearrangment of SiC grains, yielding 98% of theoretical density of SiC even at $1900^{\circ}C$. Flexural strength of the specimen containing 2 wt% $Al_2O_3$ was increased as increasing the hot-pressing temperature up to $2050^{\circ}C$ and maximum value was 800 MPa, while the flexural strength of the specimen containing 10 wt% $Al_2O_3$ was decreased as increasing the hot-pressing temperature above $2000^{\circ}C$ due to the formation of continuous grain boundary phase. Fracture toughness of the specimens was in the range of $3.5~4.5\;MNm^{-3/2}$ regardless of the amount of $Al_2O_3$ addition.

• Journal of Electrochemical Science and Technology
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• v.8 no.2
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• pp.101-106
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• 2017

$Li_2SiO_3$ was used as a coating material to improve the electrochemical performance of $Li[Ni_{0.8}Co_{0.15}Al_{0.05}]O_2$. $Li_2SiO_3$ is not only a stable oxide but also an ionic conductor and can, therefore, facilitate the movement of lithium ions at the cathode/electrolyte interface. The surface of the $Li_2SiO_3$-coated $Li[Ni_{0.8}Co_{0.15}Al_{0.05}]O_2$ was covered with island-type $Li_2SiO_3$ particles, and the coating process did not affect the structural integrity of the $Li[Ni_{0.8}Co_{0.15}Al_{0.05}]O_2$ powder. The $Li_2SiO_3$ coating improved the discharge capacity and rate capability; moreover, the $Li_2SiO_3$-coated electrodes showed reduced impedance values. The surface of the lithium-ion battery cathode is typically attacked by the HF-containing electrolyte, which forms an undesired surface layer that hinders the movement of lithium ions and electrons. However, the $Li_2SiO_3$ coating layer can prevent the undesired side reactions between the cathode surface and the electrolyte, thus enhancing the rate capability and discharge capacity. The thermal stability of $Li[Ni_{0.8}Co_{0.15}Al_{0.05}]O_2$ was also improved by the $Li_2SiO_3$ coating.

• Journal of the Korean Ceramic Society
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• v.25 no.6
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• pp.704-712
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• 1988

In order to investigate the effect of the second phase on Al2O3 matrix, SiC whisker was dispersed in Al2O3 matrix as a second phase over the content range of 5vol% to 20vol%. To this mixture, Y2O3 or TiO2 powder was added as a sintering additive before isostatically pressing and pressureless sintering at 1800-190$0^{\circ}C$ for 90min in N2 atmosphere. With increasing SiC whisker content, relative densities of composites were decreased and the grain growth of Al2O3 was restricted. When Y2O3 was added as a sintering aid the sintering temperature was 180$0^{\circ}C$, the maximum values of flexural strength, hardness and fracture toughness were 537MPa, 12.1GPa, 3.7MPa.m1/2, respectively. However, when the sintering temperature was elevated to 190$0^{\circ}C$, maximum values of flexural strength, hardness and fracture toughness were 453MPa, 17.5GPa, 4.9MPa.m1/2, respectively. Improved mechanical properties are assumed to be attributed to the crack deflection by the second phase SiC whisker and whisker pullout mechanism.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.650-653
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• 2004

We have synthesized some phosphors in the system MO-$Al_2O_3-SiO_2$(M=Sr, Ba) by combinatorial polymerized-complex method. Composition and synthetic temperature of phosphors in the liblary was screened from the emission intensities of individual samples under 365nm excitation. As we were screened the higher luminescent candidate composition (or candidate host lattice) at 365nm excitation, investigated whether good radiation was possible at the 405 or 465nm excitation by give the host lattice to be discovered more various change. From libraries about 2 systems, the compound to be expected in long wavelength among the compound to be screened are $Sr_4Al_{14}O_{25}$, $Sr_3Al_2O_6$, $SrAl_2Si_2O_8$, and $BaAl_2Si_2O_8$.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.95-96
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• 2000

The effect of $Al_2O_3$ on the dielectric constant and the coefficient of thermal expansion of lead borosilicate glasses for the application of PDP glass paste was investigated. Measurements were made theoretically by using empirical equations on the composition of the of glasses in which the $PbO/Al_2O_3$, $B_2O_3/Al_2O_3$ and $SiO_2/Al_2O_3$ ratios were systematically varied. As a result, with increasing $PbO/Al_2O_3$ the thermal expansion coefficient and the dielectric constant noticeably increased, while the change of $B_2O_3/Al_2O_3$ and $SiO_2/Al_2O_3$ ratios did not affect those properties of the glasses.

• Journal of the Korean Ceramic Society
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• v.29 no.2
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• pp.127-135
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• 1992

It has been reported that natural petalite showed a low negative thermal coefficient and wide coefficient and wide coexisting region with liquid phase in Li2O-Al2O3-SiO2 system. Therefore, we investigated variation of microstructure and thermal and mechanical properties when the amount of SiO2 content in petalite compound and MgO addition to it compound were changed. As SiO2 content exceeded 80 wt%, crystal phases of $\beta$-cristobalite and $\beta$-spondumene solid solution were formed. Generally, the densification and bending strength were increased by the addition of MgO, but the positive thermal coefficient was found in the case of MgO 10 wt% addition because of second phase and glassy phase.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.5
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• pp.808-815
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• 2008

The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 8, 12, 16[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressureless annealing at 1650[$^{\circ}C$] for 4 hours. The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), ${\beta}$-SiC(3C), $TiB_2$, and In Situ YAG($Al_2Y_3O_{12}$). The relative density of SiC-$TiB_2$ composites was lowered due to gaseous products of the result of reaction between SiC and $Al_2O_3+Y_2O_3$. There is another reason which pressureless annealed temperature 1650[$^{\circ}C$] is lower $300{\sim}450[^{\circ}C]$ than applied pressure sintering temperature $1950{\sim}2100[^{\circ}C]$. The relative density, the flexural strength, the Young's modulus and the Vicker's hardness showed the highest value of 82.29[%], 189.5[Mpa], 54.60[Gpa] and 2.84[Gpa] for SiC-$TiB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature. Abnormal grain growth takes place during phase transformation from ${\beta}$-SiC into ${\alpha}$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of 0.0117[${\Omega}{\cdot}cm$] for 16[wt%] $Al_2O_3+Y_2O_3$ additives at 25[$^{\circ}C$]. The electrical resistivity was all negative temperature coefficient resistance (NTCR) in the temperature ranges from $25^{\circ}C$ to 700[$^{\circ}C$]. The resistance temperature coefficient of composite showed the lowest value of $-2.3{\times}10^{-3}[^{\circ}C]^{-1}$ for 16[wt%] additives in the temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$].

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.3
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• pp.106-110
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• 2014

The passivation property of $Al_2O_3$ thin film formed using atomic layer deposition (ALD) for the application of crystalline Si solar cells was investigated using microwave photoconductance decay (${\mu}$-PCD). After post-annealing at $400^{\circ}C$ for 5 min, $Al_2O_3$ thin film exhibited the structural stability having amorphous nature without the interfacial reaction between $Al_2O_3$ and Si. The post-annealing at $400^{\circ}C$ for 5 min led to an increase in the relative effective lifetime of $Al_2O_3$ thin film. This could be associated with the field effective passivation combined with surface passivation of textured Si. The capacitance-voltage (C-V) characteristics of the metal-oxide-semiconductor (MOS) with $Al_2O_3$ thin film post-annealed at $400^{\circ}C$ for 5 min was carried out to evaluate the negative fixed charge of $Al_2O_3$ thin film. From the relationship between flatband voltage ($V_{FB}$) and equivalent oxide thickness (EOT), which were extracted from C-V characteristics, the negative fixed charge of $Al_2O_3$ thin film was calculated to be $2.5{\times}10^{12}cm^{-2}$, of which value was applicable to the passivation layer of n-type crystalline Si solar cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.271-271
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• 2010

고효율 실리콘 태양전지를 제작하기 위하여 surface passivation, 레이저와 lithography기술들이 연구되어 지고 있다. 결정질 실리콘 태양전지의 기판의 두께가 점점 얇아지면서 surface-to-volume 비율이 증가되어 surface passivation은 매우 중요하다. surface passivation은 크게 2가지 방법으로 진행되고 있으다. 첫 번째는 Si의 dangling bond의 passivation과 surface recombination process 제어에 기초를 두고 있다. 일반적으로 박막을 이용한 실리콘 passivation은 $SiO_2$, SiN, a-Si, $Al_2O_3$박막 4가지가 이용되어 왔다. 본 연구에서는 p-type SoG기판위에 원자층 증착법(ALD)을 이용하여 $Al_2O_3$박막의 negative fixed charge의 internal electric field로 surface passivation을 연구하였다. TMA와 $H_2O/O_3$을 사용하여 ALD $Al_2O_3$를 10~30nm두께를 갖도록 증착하였다. 표면 처리 조건, $Al_2O_3$박막 두께, ALD 공정 조건과 후열처리등에 따른 실리콘의 특성, carrier lifetime변화를 측정하여 효과적인 field induced passivation을 제시하고자 한다.