• Bulletin of the Korean Chemical Society
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• v.33 no.2
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• pp.398-402
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• 2012

ZnSe/$SiO_2$ coaxial nanowires were synthesized by a two-step process: thermal evaporation of ZnSe powders and sputter-deposition of $SiO_2$. Two different types of nanowires are observed: thin rod-like ones with a few to a few tens of nanometers in diameter and up to a few hundred of micrometers in length and wide belt-like ones with a few micrometers in width. Room-temperature photoluminescence (PL) measurement showed that ZnSe/$SiO_2$ coaxial nanowires had an orange emission band centered at approximately 610 nm. The intensity of the orange emission from the $SiO_2$-sheathed ZnSe nanowires was enhanced significantly by annealing in a reducing atmosphere whereas it was degraded by annealing in an oxidizing atmosphere. The origins of the PL changes by annealing are discussed based on the energy-dispersive X-ray spectroscopy analysis results.

• Transactions on Electrical and Electronic Materials
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• v.4 no.3
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• pp.15-18
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• 2003

Aluminum oxide ($Al_2O_3$) materials were coated conformally on ZnO nanorods by atomic layer deposition (ALD). The ZnO nanorods were first synthesized on a Si(100) substrate from ball-milled ZnO powders by a thermal evaporation procedure. $Al_2O_3$ films were then deposited on these ZnO nanorods by ALD at a substrate temperature of $300^{\circ}C$ using trimethylaluminum (TMA) and distilled water ($H_2O$). Transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM) images of the deposited ZnO nanorods revealed that amorphous $Al_2O_3$ cylindrical shells surround the ZnO nanorods. These TEM images illustrate that ALD has an excellent capability to coat any shape of nanorods conformally.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 2000.06a
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• pp.35-58
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• 2000

The demand for sub-micrometer or nanometer functional ceramic powders with a better suspension behavior in aqueous media in increasing. Redispersible barium titanate (BT) nanocrystals, green light emitting Mn2+ doped Zn$_2$SiO$_4$ and ZnS nanoparticle phosphors were synthesized by a hydrothermal method or chemical precipitation with surface modification. The nanoparticle redispersibility for BT was achieved by using a polymeric surfactant. X-ray diffraction(XRD) results indicated that the BT particles are of cubic phase with 80 nm in size. XRD results of zinc silicate phosphor indicate that seeds play an important role in enhancing the nucleation and crystallization of Zn$_2$SiO$_4$ crystals in a hydrothermal condition. This paper describes and discuss the methods of surface modification, and the resulting related properties for BT, zinc silicate and zinc sulfide.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.47-50
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• 2002

ZnO nanowires were coated conformally with aluminum oxide ($Al_{2}O_{3}$) material by atomic layer deposition (ALD). The ZnO nanowires were first synthesized on a Si (100) substrate at $1380^{\circ}C$ from ball-milled ZnO powders by a thermal evaporation procedure with an argon carrier gas without any catalysts; the length and diameter of these ZnO nanowires are $20\sim30{\mu}m$ and $50{\sim}200$ nm, respectively. $Al_{2}O_{3}$ films were then deposited on these ZnO nanowires by ALD at a substrate temperature of $300^{\circ}C$ using trimethylaluminum (TMA) and distilled water ($H_{2}O$). Transmission electron microscopy (TEM) images of the deposited ZnO nanowires revealed that 40nm-thick $Al_{2}O_{3}$ cylindrical shells surround the ZnO nanowires.

• Journal of the Korea Institute of Military Science and Technology
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• v.15 no.4
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• pp.502-506
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• 2012

In order to find the structural characteristics of the thin films of group II-VI semiconductor compounds compared with those of powder materials, films were made of 4 powders of ZnS, CdS, CdSe, and CdTe(Aldrich), each with 99.99 % purity. For the ZnS/CdS multi-layers, the ZnS layer was coated over the CdS layer on an $AlO_x$ membrane, which served as a protective layer within a vacuum at the average speed of 1 ${\AA}$/sec. After studying the structures of the group II-VI semiconductor thin films by using X-ray spectroscopy, we found that the ZnS, ZnS/CdS, CdS, and CdSe films were hexagonal and exhibited some degree of preferred orientation. Also, the particles of the thin films of II-VI semiconductor compounds proved to be more homogeneous in size compared to those of the powder materials. These results were further verified through scanning electron microscopy(SEM), EDX analysis, and powder and thin film X-ray diffraction.

• Journal of the Korean institute of surface engineering
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• v.45 no.5
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• pp.193-197
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• 2012

The influence of annealing process in an $O_2$ atmosphere on the photoluminescence (PL) spectra properties of ZnS nanowires has been investigated. ZnS nanowires with the diameters approximately 100 nm and the lengths a few tens micrometers were synthesized by evaporating ZnS powders on Si substrates while using an Au thin film as a catalyst. ZnS nanowires had an NBE emission band at 430 nm in the violet region. The emission intensity was improved drastically by a process in which ZnS nanowires were heat-treated at $500^{\circ}C$ in an $O_2$ atmosphere for 45 minutes.

• Journal of Electrical Engineering and Technology
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• v.9 no.5
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• pp.1719-1723
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• 2014

In this study, the microwave dielectric properties of nano spheroidization glass powders added $Ba(Zn_{1/3}Ta_{2/3})O_3$ ceramics prepared by solid state reaction have been investigated. Adding $(Ba_{0.4}Ca_{0.6})SiO_3$ nano spheroidization glass powders could effectively promote the densification even in the case of decreasing the sintering temperature. When the glass frit is 0.3 wt% and sintering is carried out at a temperature of $1500^{\circ}C$ for 6 hr, a temperature stable microwave dielectric ceramic could be obtained, which has a dielectric constant (${\varepsilon}_r$) of 30.2, a quality factor ($Q{\times}f_0$) of 124,000 GHz and a temperature coefficient of resonance frequency (${\tau}_f$) of $2ppm/^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.51 no.6
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• pp.566-569
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• 2014

ZnO and SiC powders were fabricated to make crack-free composite membranes. Parts of some membranes were re-treated with an encapsulation process. These membranes were characterized by XRD, BET, and FE-SEM analyzes. The hydrogen permeation fluxes of the encapsulated and heat-treated membranes after encapsulation were observed using Sievert's type equipment. Values were measured at 1 bar with increasing temperatures. The obtained values of encapsulated and further heat-treated membrane at 298 K were $4.20{\times}10^{-6}$ and $8.64{\times}10^{-5}mol/m^2sPa$, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.415-415
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• 2012

ZnO nanostructures were synthesized by a vapor phase transport process in a single-zone furnace within a horizontal quartz tube with an inner diameter of 38 mm and a length of 485 mm. The ZnO nanostructures were grown on Au-catalyzed Si(100) substrates by using a mixture of zinc oxide and graphite powders. The growth of ZnO nanostructures was conducted at $800^{\circ}C$ for 30 min. High-purity Ar and $O_2$ gases were pushed through the quartz tube during the process at a flow rate of 100 and 10 sccm, respectively. The sequence of ON/OFF cycles of the Ar gas flow was repeated, while the $O_2$ flow is kept constant during the growth time. The Ar gas flow was ON for 1 min/cycle and that was OFF for 2 min/cycle. The structure and optical properties of the ZnO nanostructures were investigated by field-emission scanning electron microscope, X-ray diffraction, temperature-dependent photoluminescence. The preferred orientation of the ZnO nanostructures was along c-axis with hexagonal wurtzite structure.

• Journal of the Korean Magnetic Resonance Society
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• v.12 no.1
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• pp.26-32
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• 2008

We report on the ferromagnetic characteristics of $Zn_{1-x}Mn_xO$ films (x = 0.3) prepared by sol-gel method on the silicon and (0001) ${\alpha}-Al_2O_3$ substrates at the annealing temperature of 700$^{\circ}C$. Magnetic measurements show that Curie temperature ($T_C$) and the coercive field ($H_C$) for the film on the silicon are about 32 K and about 275 Oe, while those for that on the sapphire are about 32 K and 425 Oe, respectively. Energy dispersive spectroscopy and transmission electron microscopy measurements suggest that ferromagnetic precipitates originated by manganese oxide compound formed at the interfaces of the both substrates may be responsible for the observed ferromagnetic behavior of the films. Electron paramagnetic resonance study of the powders up to the concentration of x=0.15 supports the result.