• Proceedings of the Korean Society of Applied Pharmacology
• /
• 1995.04a
• /
• pp.67-67
• /
• 1995

Acyl-CoA:cholesterol acyltransferase (ACAT, EC 2.3.1.26) plays an important role in the control of intracellular free cholesterol content via its cholesterol esterifying activity. ACAT inhibitors are expected to be effective for treatment of atherosclerosis and hypercholesterolemia. In the course of a screening program for ACAT inhibitors from microbial sources, GERI-BP001 M, A, and B were isolated from the fermentation broth of a fungal strain. GERI-BP001 compounds were isolated from a culture broth of Aspergillus fumigatus F37 by acetone extraction, EtOAc extraction, SiO$_2$ column chromatography, and reverse phase HPLC. The structure of GERI-BP001 coumpounds were determined by $^1$H-NMR, $\^$l3/C-NMR, 2D-NMR, NOESY, and long range C-H COSY experiments. GERI-BP001 M, A, and B inhibit ACAT activity in an enzyme assay system using rat liver microsomes by 50% at concentrations of 75, 147, and 71 ${\mu}$M, respectively.

• Journal of the Korean Ceramic Society
• /
• v.48 no.6
• /
• pp.617-620
• /
• 2011

Thermal shock behavior of porous ceramic nozzles with various pore sizes for continuous casting process of steel was investigated in terms of physical properties and microstucture. Porous nozzle samples with a composition of $Al_2O_3$-$SiO_2$-$ZrO_2$ were fabricatedby adding various sizes of graphite as the pore forming agent. As the graphite size increased from 45~75 to 150~180 ${\mu}m$, both the resulting pore size and the flexural strength also increased. A thermal shock test was carried out at temperatures (${\Delta}$T) of 600, 700, 800, and 900$^{\circ}C$. Microstructure analysis revealed a small number of cracks on the sample with the largest mean pore size of 22.32 ${\mu}m$. In addition, increasing the pore size led to a smaller decrease in both pressure drop and elastic modulus. In conclusion, controlling the pore size can enhance thermal shock behavior.

• Asian Journal of Atmospheric Environment
• /
• v.9 no.2
• /
• pp.165-172
• /
• 2015

Under a very tough situation that there has been increasing concern to the air quality in underground subway spaces, this study set sights on the thorough estimation of the chemical properties and source apportionment of particulate matter (PM) collected on an underground subway platform by a cooperative approach of semi-bulk and single particle analyses. The size-resolved PMs were intensively collected on the platform of Miasageori station on the Seoul Subway Line-4, and then, they were semibulkily analyzed by a PIXE and the TOR$^{(R)}$ method, and individually analyzed by a SEM-EDX. Overwhelmingly enriched iron was a notable feature of elemental concentration of $PM_{2.5}$. Source classification of iron in $PM_{10-2.5}$ and $PM_{2.5}$ performed along with their elemental concentrations, indicates that the railway originated iron accounts for 95.71% and 66.39% of total iron in $PM_{10-2.5}$ and $PM_{2.5}$, respectively. Via a stoichiometric categorization, $Fe_2O_3$, $CaAl_2Si_2O_8$, $Al_2O_3$, and $CaCO_3$ show more than 85% abundance ratio in individual coarse particles. The result of theoretical estimation of the subway derived organic carbon ($OC_{Subway}$) suggests that $OC_{Subway}$ in $PM_1$ and $PM_{2.5-1}$ account for 75.86% and 51.88% of total organic carbon, respectively.

• Korean Journal of Materials Research
• /
• v.26 no.9
• /
• pp.455-459
• /
• 2016

The deposition process for the gap-filling of sub-micrometer trenches using DMDMOS, $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by flowable chemical vapor deposition (F-CVD) is presented. We obtained low-k films that possess superior gap-filling properties on trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on IMD and STI for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universal in other chemical vapor deposition systems.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.339.1-339.1
• /
• 2014

In this paper we studied the application of inter-poly dielectric as silicon dioxide-like film was deposited by the higher energy assisting deposition (HEAD) process the modified CCP process, which enables low temperature (LT) process and improving film density. In these experiments the relative hydrogen concentration of $SiO_2$-like films deposited on silicon substrate were analyzed by the secondary ion mass spectroscopy (SIMS) and it was shown that our lower hydrogenated oxide (LHO) film prepared by HEAD process with the precursor contained the siloxane species had lower hydrogen concentration, $8{\times}10{\cdot}^{22}cm{\cdot}^3$ than that of the commercial undoped silicon glass (USG) film ($1{\times}10{\cdot}^{21}cm{\cdot}^3$) prepared by the high density plasma-chemical vapor deposition (HDP-CVD). We consider that the LHO film deposited by HEAD process used as high performance material into Flash memory devices.

• Korean Journal of Materials Research
• /
• v.26 no.8
• /
• pp.427-429
• /
• 2016

A multi-step deposition process for the gap-filling of submicrometer trenches using dimethyldimethoxysilane (DMDMOS), $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by plasma enhanced chemical vapor deposition (PECVD) is presented. The multi-step process consisted of pre-treatment, deposition, and post-treatment in each deposition step. We obtained low-k films with superior gap-filling properties on the trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on inter metal dielectric (IMD) and shallow trench isolation (STI) processes for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universally for other chemical vapor deposition systems.

• Journal of Electrical Engineering and Technology
• /
• v.13 no.4
• /
• pp.1638-1643
• /
• 2018

Multi-layer ceramic capacitors as decoupling capacitor were fabricated by dielectric composition with a high dielectric constant. The fabricated decoupling capacitors were embedded in the PCB of the 10G RF transceiver module and evaluated for the characteristics of electrical noise by the level of AC input voltage. In order to further improve the electrical properties of the $BaTiO_3$ based composite, glass frit, MgO, $Y_2O_3$, $Mn_3O$, $V_2O_5$, $BaCO_3$, $SiO_2$, and $Al_2O_3$ were used as additives. The electrical properties of the composites were determined by various amounts of additives and optimum sintering temperature. As a result of the optimized composite, it was possible to obtain a density of $5.77g/cm^3$, a dielectric constant of 1994, and an insulation resistance of $2.91{\times}10^{12}{\Omega}$ at an additive content of 5wt% and a sintering temperature of $1250^{\circ}C$. After forming a $2.5{\mu}m$ green sheet using the doctor blade method, a total of 77 layers were laminated and sintered at $1180^{\circ}C$. A decoupling capacitor with a size of $0.6mm(W){\times}0.3mm(L){\times}0.3mm(T)$ (width, length and thickness, respectively) and a capacitance of 100 nF was embedded using a PCB process for the 10G RF Transceiver modules. In the range of AC input voltage 400mmV @ 500kHz to 2200mV @ 900kHz, the embedded 10G RF Transceiver modules evaluated that it has better electrical performance than the non-embedded modules.

• Journal of the Korean Electrochemical Society
• /
• v.11 no.4
• /
• pp.242-255
• /
• 2008

In lithium-ion batteries(LIB), the development of electrolytes had mainly focused on the characteristics of lithium cobalt oxide($LiCoO_2$) cathode and graphite anode materials since the commercialization in 1991. Various studies on compatibility between electrode and electrolytes had been actively developed on their interface. Since then, as they try to adopt silicon and tin as anode materials and three components(Ni, Mn, Co), spinel, olivine as cathode materials for advanced lithium batteries, conventional electrolyte materials are facing a lot of challenges. In particular, requirements for electrolytes performance become harsh and complicated as safety problems are seriously emphasized. In this report, we summarized the research trend of electrolyte materials for the electrode materials of lithium rechargeable batteries.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.04a
• /
• pp.39-40
• /
• 2008

We have examined post-annealing and passivation for the transparent bottom gate IGZO TFT having an inverse co-planar structure. The oxygen-vacuum two step annealing enhanced the field effect mobility up to 18 $cm^2$/Vsandthesub-threshold swing down to 0.2V/dec. However, the hysterysis and the bias stability problems could not be solved just by post-annealing. Thus, we have passivated the bottom gate IGZO TFTs with organic and inorganic materials. $Ga_2O_3$, $Al_2O_3$, $SiO_2$ and some polymer materials were effective materials for passivations. The hysterysis and the stability of the TFTs were remarkably improved by the passivations. We have manufactured the AMOLED panel with the transparent bottom gate IGZO TFT array successfully.

• Journal of the Korean institute of surface engineering
• /
• v.34 no.5
• /
• pp.414-420
• /
• 2001

A 30-kV plasma immersion ion implantation setup (P $I^3$) has been equipped with a self-developed 6'-magnetron to perform hard coatings with enhanced adhesion by P $I^3$D(P $I^3$ assisted deposition) process. Using ICP source with immersed Ti antenna and reactive magnetron sputtering of Ti target in $N_2$/Ar ambient gas mixture, the TiN films were prepared on Si substrates at different pulse bias and ion-to-atom arrival ratio ( $J_{i}$ $J_{Me}$ ). Prior to TiN film formation the nitrogen implantation was performed followed by deposition of Ti buffer layer under A $r^{+}$ irradiation. Films grown at $J_{i}$ $J_{Me}$ =0.003 and $V_{pulse}$=-20kV showed columnar grain morphology and (200) preferred orientation while those prepared at $J_{i}$ $J_{Me}$ =0.08 and $V_{pulse}$=-5 kV had dense and eqiaxed structure with (111) and (220) main peaks. X-ray diffraction patterns revealed some amount of $Ti_{x}$ $N_{y}$ in the films. The maximum microhardness of $H_{v}$ =35 GN/ $M^2$ was at the pulse bias of -5 kV. The P $I^3$D technique was applied to enhance wear properties of commercial tools of HSS (SKH51) and WC-Co alloy (P30). The specimens were 25-kV PII nitrogen implanted to the dose 4.10$^{17}$ c $m^{-2}$ and then coated with 4-$\mu\textrm{m}$ TiN film on $Ti_{x}$ $N_{y}$ buffer layer. Wear resistance was compared by measuring weight loss under sliding test (6-mm $Al_2$ $O_3$ counter ball, 500-gf applied load). After 30000 cycles at 500 rpm the untreated P30 specimen lost 3.10$^{-4}$ g, and HSS specimens lost 9.10$^{-4}$ g after 40000 cycles while quite zero losses were demonstrated by TiN coated specimens.s.