• Economic and Environmental Geology
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• v.27 no.6
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• pp.523-535
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• 1994

The strata-bound type iron ore bodies in the Chungju mine are interbedded with metamorphic rocks which are intruded by Mesozoic granitic rocks. The iron ore deposit occurs as layer or lens shape which are concordant with the metamorphic rocks. The iron ore is classified into banded and massive types based on the mode of texture and occurrence. Grain size and iron-oxides tend to become coarser toward massive ore than banded ore. Banded ores commonly contain internal layers defined by alternating magnetite- rich, hematite-rich, magnetite-hematite, and quartz-rich mesobands. The banded iron ore consists of hematite, magnetite, quartz, feldspar, and minor amounts of biotite, muscovite, chlorite, carbonates, epidote, allanite, and zircon. Massive ores which are characterized by high magnetite content occur in contact of granitic rocks. The massive iron ores consist mostly of magnetite and quartz, with minor amounts of hematite, pyrite, microcline, biotite, muscovite, chlorite, carbonates, epidote, allanite and zircon. Magnetite from banded and massive ores is almost pure $Fe_3O_4$ in composition, including 0.14 to 0.27 wt.% MnO and 0.10 to 0.15 wt.% MnO, respectively. Hematite of the ore contains 0.87 to 1.27 wt.% $TiO_2$ in banded ore and 3.44 to 6.96 wt.% $TiO_2$ in massive ore, respectively. Biotite shows a little compositional variation depending on ore types. Biotite of the banded ore has lower FeO, $TiO_2$ and $Al_2O_3$, and higher MgO and $SiO_2$ than the massive ore. The modes of occurrence and petrography of ore implies that massive ores might have been formed either under more reducing environments or higher temperature condition than banded ore. Banded ores might represent early episode of iron enrichment due to regional metamorphism. Massive ores might be related to the contact metamorphism resulting from late granitic intrusion.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1216-1219
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• 2007

We have been developing printed organic TFTs for flexible displays. In this study, we have pay attention to the operation stability improvement of the organic TFTs, and studied several factors especially depending on the dielectric layers. From the detailed analysis of the effects of dielectric layers, we have proposed a new printed dielectric layer which is mainly consisting of metal oxide and gives high operation stability

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.3
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• pp.109-115
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• 2003

Diamond-like carbon (DLC) films are deposited at room temperature using a filtered cathodic vacuum arc (FCVA) technique. The influence of negative bias voltage (applied to the substrate from 0 to -250V) on the $sp^3$ hybridized carbon fraction is examined by Raman spectroscopy and x-ray photoelectron spectroscopy (XPS) for C 1s core peak. For the first time, depth profile of C 1s, Si 2p, and O 1s XPS peaks for the deposited DLC film are obtained. DLC film is modeled as a multilayered structure. composing of surface, bulk, and interface. In addition, the x-ray reflectivity (XRR) is proposed as a method for estimating the density, surface roughness, and thickness of each layer constituting the DLC film. The estimated thickness of DLC film is in good agreement with the result obtained from the transmission electron microscope (TEM) measurement.

• Journal of the Optical Society of Korea
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• v.19 no.1
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• pp.80-83
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• 2015

White reflective patterns are very difficult to fabricate, due to the scattering and reflection of light, especially when the pattern size goes down to micron size. A reflective white barrier structure of height $50{\mu}m$ and width $80{\mu}m$ was fabricated using dry-film resist as an intermediate reverse pattern. The reverse dry-film resist pattern was coated with an $SiO_2$ layer by sputtering, to protect the resist from chemical attack by the radical molecules in UV white resin. The UV white resin was applied on the dry-film resist pattern and then cured with ultraviolet light. The fine three-dimensional reflective patterns were finished by removing the dry-film resist.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.29-32
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• 2000

Meta1-ferroelectric-insulator-semiconductor(MFIS) devices using Pt/LiNbO$_{3}$/AIN/Si structure were successfully fabricated. AIN thin films were made into metal-insulator-semiconductor(MIS) devices by evaporating aluminum in a dot array on the film surface. The dielectric constant of the AIN film calculated from the capacitance in the accumulation region in the capacitance-voltage(C-V ) characteristic is 8. The gate leakage current density of MIS devices using a aluminum electrode showed the least value of 1$\times$10$^{-8A}$ $\textrm{cm}^2$ order at the electric field of 500㎸/cm. A typica] value of the dielectric constant of MFIS device was about 23 derived from 1MHz capacitance-voltage (C-V) measurement and the resistivity of the film at the field of 500㎸/cm was about 5.6$\times$ 10$^{13}$ $\Omega$.cmcm

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.956-959
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• 2001

In die and mould industry, major material such as cemented carbide is broadly used for increasing the life time and decreasing the cost. It is also required the development for the skills of wire-cut electrical discharge machining(WEDM), but the WEDMed surface was found to be worst due to the attached components of wire. Precision machining method like lapping is necessary for obtaining high quality surface. The lapping compound such as Al2O3 and SiC and cast iron lap can be used for lapping process. The components of Cu and Zn were found WEDMed surface of the specimen. As the result, the low quality of precision was obtained and the heat damage layer of the specimen was occurred. The value of surface hardness was deteriorated, and therefore finish process was required.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.2023-2025
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• 2002

We have fabricated a novel vertical trench-Hall device sensitive to the magnetic field parallel to the sensor chip surface. The vertical trench-Hall device is built on SOI wafer which is produced by silicon direct bonding technology using bulk micromachining, where buried $SiO_2$ layer and surround trench define active device volume. Sensitivity up to 350 V/AT is measured.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.71-74
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• 1998

In this Paper, we investigate the electrical properties of ultra-thin(70${\AA}$) nitrided(NO) and reoxidized nitrided oxide(ONO) film that ale considered to be premising candidates for replacing conventional silicon dioxide film in ULSI level integration. we studied I$\sub$g/-V$\sub$g/ characteristics to know the effect of nitridation and reoxidation on the current conduction, leakage current time-dependent dielectric breakdown(TDDB) to evaluate charge-to-breakdown(Q$\sub$bd/), and the effect of stress temperature(25, 50, 75, 100$^{\circ}C$) and compared to those with thermal gate oxide(SiO$_2$) of identical thickness. From the measurement results, we find that reoxidized nitrided oxide(ONO) film shows superior dielectric characteristics, leakage current, and breakdown-to-charge(Qbd) performance over the NO film, while maintaining a similar electric field dependence compared to NO layer. Besides, ONO film has strong resistance against variation in temperature.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.22.1-22.1
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• 2009

차세대 CMOS 공정에서 유전상수가 높은 게이트 절연막과 함께 게이트 전극이 관심을 끌고 있다. 게이트 전극은 전도도가 높아야 하고 p-MOS, n-MOS에 맞는 일함수를 가져야 하며 열적 특성이 안정해야 한다. 탄탈룸 계열 탄화물이나 질화물은 게이트 전극으로 관심을 끌고 있는 물질이며 이를 원자층 화학증착법으로 박막화 하는 공정이 관심을 끌고 있다. 원자층 화학공정에서는 전구체의 역할이 중요하며 이의 기상반응 메카니즘, 표면 반응 메카니즘을 제대로 이해해야 한다. 본 연구에서는 TBTDET (tert-butylimido tris-diethylamido tantalum) 전구체의 반응 메커니즘을 FTIR(Fourier Transform Infrared)을 이용해 진단하였다. 또한 수소, 암모니아, 메탄을 이용한 열화학 원자층 증착, 플라즈마 원자층 증착 공정을 수행하여 박막을 얻고 이들의 특성을 평가하였다. 각 공정에 따라 반응 메커니즘이 달라지고 박막의 조성이 달라지며 또한 박막의 물성도 달라진다. 특히 박막에 형성되는 TaC, TaN, Ta3N5, Ta2O5 (증착 후 산소의 유입에 의해 형성됨) 등의 조성이 공정에 따라 달라지며 박막의 물성도 달라진다. 반응메카니즘의 연구를 통해 각 공정에서 어떠한 조성의 박막이 얻어지는 지를 규명하였고 박막의 밀도에 따라 산소유입량이 어떻게 달라지는 지를 규명하였다.

• Journal of Information Display
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• v.4 no.1
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• pp.1-8
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• 2003

Recent progress in both low pretilt and high pretilt defect free C1 surface stabilized ferroelectric liquid crystal (SSFLC) devices is reviewed. First, by numerical calculation to investigate the balance between surface azimuthal anchoring energy and bulk elastic energy within the confined chevron layer geometry of C1 and C2, it is possible to achieve a zigzag free C1 state by low azimuthal anchoring alignment with a low pretilt angle. The critical azimuthal anchoring coefficient for defect free C1 state is calculated. Its relationship with elastic constant, chevron angle as well as surface topography effect are also discussed. Second, using $5^{\circ}$ oblique SiO deposition alignment method a defect free, large memory angle, high contrast ratio and bistable C1 SSFLC display, which has potential for electronic paper applications has also been developed. The electrooptical properties and bistability of this device have been investigated. Various aspects of defect control are also discussed.