• 제목/요약/키워드: $SiO_2$ impurity

검색결과 92건 처리시간 0.022초

Impurity-free vacancy diffusion 방법을 이용하여 압축 응력을 가진 InGaAs/InGaAsP 다중양자우물 구조의 무질서화 (Quantum well intermixing of compressively strained InGaAs/InGaAsP multiple quantum well structure by using impurity-free vacancy diffusion technique)

  • 김현수;박정우;오대곤;최인훈
    • 한국진공학회지
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    • 제9권2호
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    • pp.150-154
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    • 2000
  • Impurity-free vacancy diffusion 방법을 이용하여 압축 응력을 가진 InGaAs/InGaAsP 다중 양자 우물 구조에서 열처리 온도에 따른 무질서 정도를 조사하였다. InGaAs/SiO$_2$ cap 구조가 InP/$SiO_2$ cap 구조보다 급속열처리 (rapid thermal annealing : RTA) 과정에서 더 많은 청색 천이를 나타내었다. 열처리 온도 $700^{\circ}C$에서, InGaAs/$SiO_2$ cap 구조의 경우 다중양자우물의 밴드갭 파장은 1.55 $\mu\textrm{m}$대역에서 1.3 $\mu\textrm{m}$ 대역으로 이동하였으며, InGaAs/$SiO_2$ cap 구조와 InP/$SiO_2$ cap 구조의 밴드갭 파장차이는 195 nm (123 meV)로 높은 선택성을 나타내었다. 또한, DCXRD 스펙트럼으로부터 다중양자우물 구조에서 균일한 합금형태로 완전히 무질서화되는 것을 볼 수 있었다.

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SiO2 첨가가 AIN 세라믹스의 고온 비저항에 미치는 영향 (Effects of SiO2 on the High Temperature Resistivities of AIN Ceramics)

  • 이원진;김형태;이성민
    • 한국세라믹학회지
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    • 제45권1호
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    • pp.69-74
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    • 2008
  • The effects of $SiO_2$ impurity on the high temperature resistivities of AIN ceramics have been investigated. When $SiO_2$ was added into 1 wt% $Y_2O_3$-doped AIN, DC resistivities have decreased and electrode polarizations disappeared. Impedance spectroscopy showed two semi-circles at $600^{\circ}C$, which were attributed to grain and grain boundary, respectively. $SiO_2$ doping had more significant effects on the grain resistivity than grain boundary resistivity, implying that doped Si acted as a donor in AIN lattice. In addition, voltage dependency of DC resistivity was observed, which might be related to dependency of size of grain boundary semi-circle on the bias voltage in impedance spectroscopy.

Studies of the $TiO_2-Si$ Interface Bombarded by $Ar^+$ Ion Beam

  • Zhang, J.;Huang, N.K.;Lu, T.C.;Zeng, L.;Din, T.;Chen, Y.K.
    • 한국진공학회지
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    • 제12권S1호
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    • pp.63-66
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    • 2003
  • It is experimentally shown that a $TiO_2$ film on Si(111) substrate was prepared by using the technique of D.C. reaction sputter deposition with $Ar^{+}$ ion beam bombardment, and a layer-like structure was observed from the depth profile of the interface between $TiO_2$ film and Si substrate with Scanning Electron Microscopy and Electron Probe. It was also surprisingly discovered that Ti atoms could be detected at about 9 $\mu$m depth. The $TiO_2$-Si interface bombarded by $Ar^{+}$ ion beams revealed multi-layer structures, a mechanism might be caused by defect diffusion, impurity and matrix relocation. Multi-relocations of impurity and matrix atoms were as a result of profile broadening of the $TiO_2$-Si interface, and the spread due to matrix relocation in this system is shown to exceed much more the spread due to impurity relocation.

Si 첨가강의 Descaling 특성에 미치는 강조성 및 가열온도의 영향 (Effects of Composition and Temperature on the Descaling Characteristics in Si Containing Steel)

  • 최진원;권순주
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2004년도 제5회 압연심포지엄 신 시장 개척을 위한 압연기술
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    • pp.277-284
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    • 2004
  • Low carbon steels containing Si of up to $1.2\;wt\%$ were oxidized in air at 1373 K and 1523 K, i.e. below and above the eutectic temperature of FeO and $Fe_2SiO_4$. The influence of a impurity element, S on behavior of scale formation during oxidation was investigated by using $M\"{o}chssbauer$ spectroscopy and EDS. This allowed establishment of an interface oxidation model of Si-added steel depending on temperature and an impurity element. A compound of FeO and FeS was formed in the scale/matrix interface of low carbon steels containing S of up to $0.03\;wt\%$ oxidized above 1213 K of the eutectic temperature. This was flat formed between $Fe_2SiO_4$ nodules along the scale/matrix interface without selective oxidation. It is due to low viscosity and high wettability of the compound of FeO and FeS in liquid. Conventional metallographic examinations revealed that roughness of the scale/matrix interface in Si-added steels became flat as the content of S increased. It was independent of oxidizing temperature and Si content. Effects of oxidizing temperature and an impurity element content on descaling characteristics in Si-added steels were evaluated by using a hydraulic descaling simulator. Good descaling characteristics was attributable to this flatness of the scale/matrix interface.

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PAALD 방법을 이용한 TaN 박막의 구리확산방지막 특성 (Characteristics of TaN Film as to Cu Barrier by PAALD Method)

  • 부성은;정우철;배남진;권용범;박세종;이정희
    • 반도체디스플레이기술학회지
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    • 제2권2호
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    • pp.5-8
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    • 2003
  • In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and $SiO_2$ by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and NH$_3$ as precursors. The TaN films were deposited at $250^{\circ}C$ by both method. The growth rates of TaN films were 0.8${\AA}$/cycle for PAALD and 0.75${\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w -1.8:0.12 mm but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was 11g/cmand one for thermal ALD TaN was 8.3g/$cm^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200 nm)/TaN(10 nm)/$SiO_2$(85 nm)/ Si structure was shown at temperature above $700^{\circ}C$ by XRD, Cu etch pit analysis.

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950℃ 불순물을 포함한 헬륨 환경에서 CVD β-SiC의 산화 (Oxidation of CVD β-SiC in Impurity-Controlled Helium Environment at 950℃)

  • 김대종;김원주;장지은;윤순길;김동진;박지연
    • 한국세라믹학회지
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    • 제48권5호
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    • pp.426-432
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    • 2011
  • The oxidation behavior of CVD ${\beta}$-SiC was investigated for Very High Temperature Gas-Cooled Reactor (VHTR) applications. This study focused on the surface analysis of the oxidized CVD ${\beta}$-SiC to observe the effect of impurity gases on active/passive oxidation. Oxidation test was carried out at $950^{\circ}C$ in the impurity-controlled helium environment that contained $H_2$, $H_2O$, CO, and $CH_4$ in order to simulate VHTR coolant chemistry. For 250 h of exposure to the helium, weight changes were barely measurable when $H_2O$ in the bulk gas was carefully controlled between 0.02 and 0.1 Pa. Surface morphology also did not change based on AFM observation. However, XPS analysis results indicated that a very small amount of $SiO_2$ was formed by the reaction of SiC with $H_2O$ at the initial stage of oxidation when $H_2O$ partial pressure in the CVD ${\beta}$-SiC surface placed on the passive oxidation region. As the oxidation progressed, $H_2O$ consumed and its partial pressure in the surface decreased to the active/passive oxidation transition region. At the steady state, more oxidation did not observable up to 250 h of exposure.

Origin of Charge Puddle of Graphene on α - SiO2: First Principles Study.

  • Shim, Yoon Su
    • EDISON SW 활용 경진대회 논문집
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    • 제4회(2015년)
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    • pp.338-342
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    • 2015
  • Ripples and charge impurity effect of graphene are considered as the origin of charge puddles in graphene sheet on SiO2. However, this topic is very controversial among researchers in graphene community. In this study, by using density functional theory, we calculate the band structure of the rippled graphene model and charged impurity model that is located close to the (0001) ${\alpha}$-quartz surface. We expect that this study will provide great insight on this matter.

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혼성물리화학기상 증착법으로 여러가지 불순물층 위에 제조한 $MgB_2$ 박막에 대한 연구 (Study of $MgB_2$ Films Grown on Various Impurity Layers by using HPCVD Method)

  • 박세원;성원경;정순길;강원남
    • Progress in Superconductivity
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    • 제10권1호
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    • pp.35-39
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    • 2008
  • By using the hybrid physical-chemical vapor deposition (HPCVD) technique, we have fabricated $MgB_2$ thick films on $Al_{2}O_3$ substrates with various impurity layers of Ni, Ti, and SiC. We have found a significant enhancement of the critical current density ($J_c$) for $MgB_2$ films grown on impurity layered substrates, indicating that additional impurity layers were provided as possible pinning sites by chemical doping in $MgB_2$ films. All samples doped by Ni, Ti, and SiC were observed to have high superconducting transition temperatures of 39 - 41 K. The $J_c$ of $MgB_2$ films grown on SiC impurity layered substrates showed three times higher than that of undoped films at high magnetic fields above 1 T.

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PAALD 방법을 이용한 TaN 박막의 구리확산방지막 특성

  • 부성은;정우철;배남진;권용범;박세종;이정희
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
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    • pp.14-19
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    • 2002
  • In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and SiO2 by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and $NH_3$ as precursors. The TaN films were deposited on $250^{\circ}$C by both method. The growth rates of TaN films were $0.8{\AA}$/cycle for PAALD and $0.75{\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w - $1.8 : 0.12 \mu\textrm{m}$ but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was $11g/\textrm{cm}^3$ and one for thermal ALD TaN was $8.3g/\textrm{cm}^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200nm)/TaN(l0nm)/$SiO_2(85nm)$/Si structure was shown at temperature above $700^{\circ}$C by XRD, Cu etch pit analysis.

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플라즈마 식각에 의하여 실리콘 표면에 유기된 불순물 오염의 분석 및 제거 (Analysis and Reduction of Impurity Contamination Induced by Plasma Etching on Si Surface)

  • 조선희;이원종
    • 한국전기전자재료학회논문지
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    • 제19권12호
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    • pp.1078-1084
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    • 2006
  • Impurity contamination induced by $CF_4\;and\;HBr/Cl_2/O_2$ plasma etching on Si surface was examined by using surface spectroscopes. XPS(x-ray photoelectron spectroscopy) surface analysis showed that F of 0.4 at % exists in the surface layer in the form of Si-F bonding but Br and Cl are below the detection limit $(0.1{\sim}1.0%)$ of the spectroscope. Static-SIMS(secondary ion mass spectrometry) surface analysis showed that the etched Si surface was contaminated with etching gas elements such as H, F, Cl and Br, and they existed to the depth of about $20{\sim}40nm$. The etched Si surface was treated with three different methods that were HF dip, thermal oxidation followed by HF dip and oxygen-plasma oxidation followed by HF dip. They showed an effect in reducing the impurity contamination and the oxygen-plasma oxidation followed by HF dipping method appears to be a little bit more effective.