• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.101-106
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• 1999

Pb$(Zr_{0.5},Ti_{0.5})O_3$ thin films were prepared on $Pt/Ti/SiO_2/Si$substrates by spin-coating. The sol was sonicated in an ultrasonic bath to promoto homogenization and the results were compared with untreated case. In the case of PZT thin films prepared from sonicated sol, only perovskite phase was obtained at $550^{\circ}C$ and "rosette" structures in the films disappeared. Dieletric constants (10kHz), remnant polarization, and coercive field of the films prepared from untreated and sonicated sol were 335 and 443, 12.3 and17.7$\mu$C/$\textrm{cm}^2$, 168.4 and 153.5 kV/cm. Electrical properties were improved by introduction of the sonication processon process

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.336-343
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• 1996

We have studied the preparation and the properties of $Ba_{1-x}$Sr$_{x}$TiO$_{3}$(BST) thin films by using the sol-gel method. Through the comparison of the effects of various solvents and additives in making solutions, we establish the production method of the stable solution which generates the high quality of BST film. We also set up the heat-treatment conditions for depositing the BST thin film through the TGA and XRD analyses. Through the comparison of the surface conditions of BST films deposited on Pt/Ta/SiO$_{2}$/Si and Pt/Ti/SiO$_{2}$/Si substrates, we find that Ta is more efficient diffusion barrier of Si than Ti so that Ta layer prevents the formation of hillocks. We fabricate the planar type capacitor and measure the dielectric properties of the BST thin film deposited on the Pt/Ta/SiO$_{2}$/Si substrate. Dielectric constant and dielectric loss tangent at 1V, 10kHz, and leakage current density at 3V of the BST thin film are 339, 0.052 and 13.3.mu.A/cm$^{2}$, respectively.ely.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.2
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• pp.865-868
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• 2005

We fabricated the $Pb_{0.72}La_{0.28}TiO_3 (PLT(28))$ thin film successfully by using the sol-gel method and characterized it to evaluate its potential for being utilized as the capacitor dielectrics of ULSI DRAMs. In our sol-gel process, the acetates were used as the starting materials. Through the TGA-DTA analysis, we established the excellent fabrication conditions of the sol-gel method for the PLT(28) thin film. We obtained the dense and crack-free PLT(28) thin film of 100% perovskite phase by drying at 350$^{\circ}C$ after each coating and final annealing at 650$^{\circ}C$. Electrical properties of PLT(28) thin film were measured through formation on the Pt/Ti/SiO$_2$/Si substrate and its dielectric constant and leakage current density were measured as 936 and 1.1${\mu}$A/cm$^2$, respectively

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1491-1493
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• 1997

In this study, Sol-Gel derived $Ba_{0.7}Sr_{0.3}TiO_3$ (BST(70/30)) thin films were investigated. The stock solution of BST were fabricated and spin-coated on the Pt/Ti/$SiO_2$/Si and ITO/glass substrates. The coated specimen were dried at $300^{\circ}C$ and finally annealed at $650{\sim}750^{\circ}C$. To analyse crystallization condition and microstructural morphology for different substrates, XRD, and SEM analysis were processed. In the BST(70/30) composition. dielectric constant and loss characteristics measured at 1kHz were 173, 0.01% for Pt/Ti/$SiO_2$/Si substrates and 181, 0.019% for ITO/glass substrates, respectively.

• Korean Chemical Engineering Research
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• v.53 no.3
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• pp.276-281
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• 2015

Nanostructured $TiO_2-SiO_2$ materials have widely been used as anti-reflecting coating, optical-chemical sensors and catalysts because of their superior optical and thermal properties as well as chemical durability. Web type $SiO_2$ microfibers with nano-crystalline $TiO_2$ were prepared by electrospinning of Ti-PCS mixed solution and oxidation controlled heat-treatment, rather simple than sol-gel process. Nano-crystalline anatase phase were formed for the heat-treatment up to $1200^{\circ}C$ and they were finely dispersed in the amorphous $SiO_2$ matrix.

• Journal of the Korean Ceramic Society
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• v.37 no.11
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• pp.1097-1104
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• 2000

MOD(Metal-Organic-Decomposition)법에 의해 $Y_2$O$_3$버퍼층에 Pt/TiO$_2$/SiO$_2$/Si 기판 위에 제조한 후, 그 표면 위에 졸-겔 방법으로 YMnO$_3$박막을 형성하였다. 기판의 종류와 수화조건 변화가 YMnO$_3$박막의 결정화 거동에 미치는 영향을 고찰하였으며, 또한 $Y_2$O$_3$버퍼층 유.무에 따른 Mn의 산화상태를 확인하고 이에 따른 유전특성 변화를 연구하였다. $Y_2$O$_3$버퍼층을 삽입하지 않고 직접 기판 위에 형성한 YMnO$_3$박막의 결정상은 기판의 종류 및 Rw 변화에 관계없이 orthorhombic 구조임이 확인되었다. 반면, $Y_2$O$_3$버퍼층 위에 형성된 YMnO$_3$박막의 경우에는 Rw($H_2O$/alkoxide mole ratio)가 0~6 범위 내에서 낮아질술고 hexagonal 결정상 성장에 유리하였으며, 또한 Pt(111)/TiO$_2$/SiO$_2$/Si 기판이 Ptd(200)/TiO$_2$/SiO$_2$/Si에 비하여 결정상 형성에 용이하였다. $Y_2$O$_3$버퍼층은 YMnO$_3$결정상 내에서 $Mn^{4+}$ 이온형성을 억제함으로써 누설전류밀도가 크게 감소되는 효과를 주었으며, 동시에 강유전 특성을 지닌 hexagonal 결정상 형성에 유리하게 작용하였다. 결론적으로, $Y_2$O$_3$는 Pt가 코팅된 Si 기판 위에 YMnO$_3$박막 제조시 그 강유전 특성을 향상시켜주는 우수한 버퍼층 재료임을 확인하였다.

• Applied Chemistry for Engineering
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• v.10 no.7
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• pp.963-968
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• 1999

The global environmental problems have been caused by the release of CFCs. Therefore, methods for safe destruction of recoverd CFCs will be eventually needed. The objective of this study was to develop and test a catalyst operating at a mild condition for the decomposition of CFC-113. In this work, catalytic oxidative decomposition of CFC-113 was carried out over aerosol $TiO_2/SiO_2(ATS)$ catalysts prepared by the sol-gel method. All ATS catalysts(Ti/Si mol ratio=1, 2, 2.33, 4) showed high initial activity. However, the deactivation of ATS catalysts was found that more remarkable due to an attack of fluorine and the destruction of ATS structure(Si-F reaction) from analyses of SEM-EDX, XRD than $TiO_2/SiO_2(ATS)$ catalyst prepared by the precipitation method. ATS catalysts prepared by more acidic prehydrolysis condition were found to have still more activity and longer life-time by increasing of acidity. The activity of ATS catalyst also depend on the content of $TiO_2$. There was reason that the acidity of the ATS catalyst was increased with the increased content of $TiO_2$ from 50 to 80 mol %. Solid superacid catalyst ($ATX/SO_4{^{2-}}$) modified with $H_2SO_4$ solution was prepared for high activity and lower deactivation. The reaction of $ATS/SO_4{^{2-}}$ catalyst also exhibited even higher activity and lower deactivation than the original ATS catalyst. It is suggested that the addition of the sulphate species clearly inhibit the deactivation.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.3
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• pp.1-6
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• 2017

Functional coatings, such as anti-reflection and self-cleaning, are frequently applied to cover glass for photovoltaic applications. Anti-reflection coatings made of mesoporous silica film have been shown to enhance the light transmittance. $TiO_2$ photocatalyst films are often applied as a self-cleaning coating. In this study, transparent hydrophobic anti-reflective and self-cleaning coatings made of $SiO_2/TiO_2$ thin layers were fabricated on a slide glass substrate by the sol-gel and dip-coating processes. The morphology of the functional coatings was characterized by field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). The optical properties of the functional coatings were investigated using an UV-visible spectrophotometer. Contact angle measurements were performed to confirm the hydrophobicity of the surface. The results showed that the $TiO_2$ films exhibit a high transmittance comparable to that of the bare slide glass substrate. The $TiO_2$ nanoparticles make the film more reflective and lead to a lower transmittance. However, the transmittance of the $SiO_2/TiO_2$ thin layers is 93.5% at 550 nm with a contact angle of $110^{\circ}$, which is higher than that of the bare slide glass (2.0%).

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.7
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• pp.1491-1496
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• 2005

We fabricated the $Pb_{0.72}La_{0.28}TiO_3$ (PLT(28)) thin film successfully by using the sol-gel method and characterized it to evaluate its potential for being utilized as the capacitor dielectrics of ULSI DRAMs. In our sol-gel process, the acetates were used as the starting materials. Through the TGA-DTA analysis, we established the excellent fabrication conditions of the sol-gel method for the PLT(28) thin film. We obtained the dense and crack-free PLT(28) thin film of $100\%$ perovskite phase by drying at $350^{\circ}C$ after each coating and final annealing at $650^{\circ}C$. Electrical properties of PLT(28) thin film were measured through formation on the $Pt/Ti/SiO_2/Si$ substrate and its dielectric constant and leakage current density were measured as 936 and $1.1{\mu}A/cm^2$, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.6
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• pp.418-424
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• 2000

Pure $TiO_2$and 10 mol % Pb-doped $TiO_2(Pb_xTi_{1-x}O_2$(x = 0.1)) powder and thin films have been prepared by the sol-gel method. Titanium isopropoxide and ethanol are used for pure $TiO_2$, lead acetate trihydrate and titanium triisopropoxide monoacethylacetonate are used for Pb-doped $TiO_2$, respectively. Films are coated on p-type Si(100) wafer and ITO glass substrates by the sol-gel spin-coating method. The powder and multi-coated films are annealed at different temperature (400~$800^{\circ}C$) for phase formation and crystallization. TGA/DTA, XRD analysis, SEM and UV-visible transmission spectroscopy have been used to study the characteristics of the powder and films. XRD results show that the films are polycrystalline, anatase type and oriented predominantly to the A(101) plane. A slight shift in the d-spacing for the Pb-doped film indicates the incorporation of the Pb into $TiO_2$lattice. A shift of the absorption wavelength in the transmission spectrum towards longer wavelength has been observed about $Pb_xT_{1-x}O_2$(x = 0.1) thin film, which indicates a decrease in the bandgap of $TiO_2$upon Pb-doping.