• Journal of the Korean Ceramic Society
• /
• v.50 no.4
• /
• pp.280-287
• /
• 2013

Plate-type phosphor is a promising substitute in overcoming the issues related to the powder phosphor paste mixed with resin. In this research, $Ca-{\alpha}-SiAlON:Eu^{2+}$ plate phosphor ($Ca_xSi_{12-(m+n)}Al_{m+n}O_nN_{16-n}:Eu_y$) was investigated for the varied compositions (m,n) of the host crystal with the fixed Eu content (y). Densification was promoted for the compositions with increasing 'm' values for the m=2n relationship. Dictated by the Eu concentration inside the phosphor crystal, photoluminescence intensity was stronger in ${\alpha}2$ specimen (m = 3.0, n = 1.5) containing the second phases when compared to ${\alpha}1$ specimen (m = 1.5, n = 0.75) comprising a single-phase ${\alpha}$-SiAlON. The concentration of Eu in the non-emitting amorphous interfacial glass phase was 2~4 times of the designed Eu concentration inside the ${\alpha}$-SiAlON crystal.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2014.11a
• /
• pp.178-179
• /
• 2014

In this study, $Ni-W-Si_3N_4$ alloy composite coatings were prepared by pulse electrodeposition method using nickel sulfate bath with different contents of tungsten source, $Na_2WO_4.2H_2O$, and dispersed $Si_3N_4$ nano particles. The structure and microstructure ofcoatings was separately analyzed by X-ray diffraction (XRD) and scanning electron microscope (SEM). Results indicated that nano $Si_3N_4$ and W content in alloy had remarkable effect on microstructure, microhardness and scratch resistant properties. Tungsten content in Ni-W and $Ni-W-Si_3N_4$ alloy ranged from 7 to 14 at.%. Scratch test results suggest that as compared to Ni-W only, $Ni-W-Si_3N_4$ prepared from Ni/W molar ratio of 1:1.5 dispersed with 20 g/L $Si_3N_4$ has shown the best result among different samples.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2015.05a
• /
• pp.171-172
• /
• 2015

$Ni-W-Si_3N_4$ alloy composite coatings were prepared by pulse electro-deposition method using nickel sulfate bath with different contents of tungsten source, $Na_2WO_4.2H_2O$, and dispersed $Si_3N_4$ nano-particles. The structure and micro-structure of coatings was separately analyzed by X-ray diffraction (XRD) and scanning electron microscope (SEM). Results indicated that nano $Si_3N_4$ and W content in alloy had remarkable effect on micro-structure, micro-hardness and scratch resistant properties. Tungsten content in Ni-W and $Ni-W-Si_3N_4$ alloy ranged from 7 to 14 at.%. Scratch test results suggest that as compared to Ni-W only, $Ni-W-Si_3N_4$ prepared from Ni/W molar ratio of 1:1.5 dispersed with 20 g/L $Si_3N_4$ has shown the best result among different samples.

• Korean Journal of Materials Research
• /
• v.6 no.3
• /
• pp.309-317
• /
• 1996

세가지 다른 방법을 이용하여 형성시킨 비정질 실리콘(SiH4 a-Si, Si2H6 a-Si, Si+ implanted SiH4 a-Si)들에 대한 저온 결정화 기구의 차이를 고전적 이론인 Avrami 식(X=1-exptn, X=결정화 분율, t=열처리 시간, n=지수)을 이용하여 검토하였다. Silane으로 형성된 비정질 실리콘의 결정화 과정에서는 Avrami 식에서의 n의 값이 2.0을 나타내고 있어, 결정성장이 이차원적으로 이루어지면서 핵생성률이 시간에 따라 감소하고 있음을 알 수가 있었다. Si+ 이온 주입에 의하여 형성된 비정질 실리콘의 결정화에서는 3.0의 지수 값이 얻어지고 있어, 정상상태의 핵생성과 함께 2차원적인 결정 성장이 이루어지고 있었다. Disilane으로 형성된 비정질 실리콘에 대한 결정화에서는 2.8의 지수값이 얻어져, 정상상태의 핵 생성이 우세하게 일어나는 2차원적인 결정성장이 일어나고 있음을 알 수 있었다. 또한 TEM을 이용하여 시간에 따라 변하는 핵생성률을 조사하여, Avrami 식의 적용이 타당성 있음을 증명하였다. 마지막으로, 최종 입자의 크기가 열처리 온도에 크게 영향을 받고 있지 않음을 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2001.07a
• /
• pp.77-78
• /
• 2001

• Proceedings of the Korean Magnestics Society Conference
• /
• 2005.06a
• /
• pp.146-147
• /
• 2005

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.235-235
• /
• 2010

장비와 cutting기술의 발전으로, 높은 효율성을 지닌 어려운 작업 재료들의 고속 건조 가공기술은 생산성, 가격 인하 그리고 환경적인 관점에서 중요성이 증가하게 되었다. AlTiN에서 Si의 첨가는 40GPa이상의 고경도와 1000도 이상의 산화온도를 지닌 나노혼합물 코팅을 형성시키는 것으로 알려졌다. 또한 Si가 아닌 다른 soft 물질을 첨가하고 3성분 이상의 다성분계 박막을 형성하는 실험을 하여, 물성이 어떻게 달라지는지 확인하였다. 특히, 나노 코팅층 형성이 매우 어려운 Al-Ti-N 합금계에서 Si, Cu 첨가의 영향 및 이러한 코팅층 형성을 단일합금을 이용하여 행하였을 때, 장점을 확인하였다. 이러한 연구를 위하여 Ti-Al의 합금 조성을 경도가 가장 우수한 것으로 알려진 50 : 50으로 하여 타겟을 만들고 증착시켜 기초실험을 진행하여 물성조건을 확인하고 이에 근거하여 실험을 진행하였다. 또한 3 원계 합금으로서 Cu, Si를 첨가한 연구를 수행하였다. 또한, 최적 조성의 합금 조성을 확인한 후, 단일 합금 타겟을 제조하였으며 이를 이용하여 형성된 코팅층과 다성분계 타겟을 이용한 박막의 물성을 비교하였다. 증착된 박막의 분석장비로는 SEM, EDS, XRD 와 AFM등을 이용하였으며, 막의 조직과 증착 두께, 조도 그리고 경도를 확인하고 막의 물성 특성이 향상됨을 입증하였다.

• Journal of the Microelectronics and Packaging Society
• /
• v.12 no.2 s.35
• /
• pp.161-166
• /
• 2005

Glass formation, thermal property and crystallization behavior were investigated in $xK_2O-(33.3-x)BaO-16.7TiO_2-50SiO_2(mole\%)$ with fresnoite($Ba_2TiSi_2O_8$) crystal by replacement BaO for $K_2O$. As x(0$\le$x$\le$20) contents increased, glass formation became easy, and crystallization temperature moved on to the low temperature. Crystal phase of the $Ba_2TiSi_2O_8$ was confirmed by XRD, and the replaced x was not effected on the formation of new crystals. The kinetics of crystallization of fresnoite were studied by applying the DTA measurements carried out at different heating rates. The average avrami exponent(n) and activation energy were changed $2.26 {\pm}0.1,\;2.03 {\pm}0.1,\;1.93{\pm}0.15$, $279 {\pm}12kJ/mole,\;302{\pm}7kJ/ mole,\;319{\pm}1kJ/mole$ according to x contents, respectively. The replaced x improved the orientation of crystal growth.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.6
• /
• pp.321-326
• /
• 2016

Minimizing the carrier recombination and electrical loss through surface passivation is required for high efficiency c-Si solar cell. Usually, $SiN_X$, $SiO_X$, $SiON_X$ and $AlO_X$ layers are used as passivation layer in solar cell application. Silicon oxide layer is one of the good passivation layer in Si based solar cell application. It has good selective carrier, low interface state density, good thermal stability and tunneling effect. Recently tunneling based passivation layer is used for high efficiency Si solar cell such as HIT, TOPCon and TRIEX structure. In this paper, we focused on silicon oxide grown by various the method (thermal, wet-chemical, plasma) and passivation effect in c-Si solar cell.

• Journal of Korean Vacuum Science & Technology
• /
• v.2 no.2
• /
• pp.107-117
• /
• 1998

Epitaxial undoped and Sb-doped si films have been grown on Si(001) substrates at temperatures T between 80 and 750$^{\circ}C$ using energetic Si in ultra-high-vacuum Kr+-ion-beam sputter deposition(IBSD). Critical epitaxial thicknesses te, The average thickness of epitaxial layers, in undoped films were found to range from 8nm at Ts=80$^{\circ}C$ to > 1.2 ${\mu}$m at Ts=300$^{\circ}C$ while Sb incorporation probabilities $\sigma$sb varied from unity at Ts 550$^{\circ}C$ to 0.1 at 750$^{\circ}C$. These te and $\sigma$Sb values are approximately one and one-to-three orders of magnitude, respectively, higher than reported results achieved with molecular-beam epitaxy. Plan-view and cross-sectional transmission electron microscopy, high-resolution x-ray diffraction, channeling and axial angular-yield profiles by Rutherford back scattering spectroscopy for epitaxial Si1-x Gex(001) alloy films (0.15$\leq$x$\leq$0.30) demonstrated that the films are of extremely high crystalline quality. critical layer thicknesses hc the film thickness where strain relaxation starts, I these alloys wre found to increase rapidly with decreasing growth temperature. For Si0.70 Ge0.30, hc ranged from 35nm at Ts=550$^{\circ}C$ to 650nm at 350$^{\circ}C$ compared to an equilibrium value of 8nm.