• Journal of the Korean Vacuum Society
• /
• v.6 no.2
• /
• pp.143-150
• /
• 1997

In this study, doffusion barrier properties of 1000 $\AA$ thick molybdenum compound(Mo, Mo-N, $MoSi_2$, Mo-Si-N) films were investigated using sheet resistance measurement, X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS), Scanning electron mircoscopy(SEM), and Rutherford back-scattering spectrometry(RBS). Each barrier material was deposited by the dc magnetron sputtering and annealed at 300-$800^{\circ}C$ for 30 min in vacuum. Mo and MoSi2 barrier were faied at low temperatures due to Cu diffusion through grain boundaries and defects in Mo thin film and the reaction of Cu with Si within $MoSi_2$, respectively. A failure temperature could be raised to $650^{\circ}C$-30 min in the Mo barrier system and to $700^{\circ}C$-30 min in the Mo-silicide system by replacing Mo and $MoSi_2$ with Mo-N and Mo-Si-N, respectively. The crystallization temperature in the Mo-silicide film was raised by the addition of $N_2$. It is considered that not only the $N_2$, stuffing effect but also the variation of crystallization temperature affects the reaction of Cu with Si within Mo-silicide. It is found that Mo-Si-N is the more effective barrier than Mo, $MoSi_2$, or Mo-N to copper penetraion preventing Cu reaction with the substrate for $30^{\circ}C$min at a temperature higher than $650^{\circ}C$.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
• /
• 2003.10a
• /
• pp.89-94
• /
• 2003

Hard coatings are known to improve the performance of cutting tools in aggressive machining applications, such as high speed machining. New superhard Ti-Al-Si-W films, characterized by a nanocomposite nano-sized (Ti,Al,Si)N crystallites embedded in amorphous $Si_3 N_4$ matrix, could be successfully synthesized on WC-Co substrates by a hybrid coating system of arc ion plating(AIP) and sputtering method. The hardness of Ti-Al-Si-N film increased with incorporation of Si, and had the maximum value ~50 GPa at the Si content of 9 at.%, respectively. And the X-ray diffraction patterns of Ti-Al-Si-N films with various Si content is investigated. In this study, Ti-Al-Si-N coatings were applied to end-mill tools made of WC-Co material by a hybrid coating system. Cutting tests fir the high-hardened material (STD11,$H_R$)C62 and their performances in high speed cutting conditions were studied. Also, the tool wear and tool lift of Ti-Al-Si-N with various si(6, 9, 19) contents were measured.

• Proceedings of the KIEE Conference
• /
• 1994.07b
• /
• pp.1223-1225
• /
• 1994

The properties of $TiN/TiSi_2$ bilayer formed by a rapid thermal anneal ing is investigated when thin $SiO_2$ film exists at the Ti-Si interface. The competitive reaction for the $TiN/TiSi_2$ bilayer occurs above $600^{\circ}C$. The thickness of the $TiSi_2$ layer decreases with increasing $SiO_2$ film thickness while the TiN layer increases at the competitive reaction. The composition of TiN layer is changed to the $TiN_xO_y$ film due to the thin $SiO_2$ layer at the Ti-Si interface while the structure of the TiN and $TiSi_2$ layers was not changed.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2003.06a
• /
• pp.705-708
• /
• 2003

To observe a hydrated biological specimen, an environmental chamber was necessary to keep the specimen in a wet state under vacuum surroundings. The specimen holder is as follows designed consequently. The specimen holder consisted of two Si wafers, the centers of which were Si$_3$N$_4$(100nm thickness) windows of a 0.3mm square. The windows were made by a photo-lithographic method. The transmission of a window at 400eV is about 70%. A hydrated biological specimen was put between the two windows. When the chamber was closed, two wafers were contact at the metal mesh by the pressure of O-rings, and the specimen holder moved by the three micrometers.

• Journal of the Korean Mathematical Society
• /
• v.35 no.3
• /
• pp.793-802
• /
• 1998

We apply the generalization of Levy's infinitesimal equation $\delta$X(t) = $\psi$(X(s), s $\leq$ t, $Y_{t}$, t, dt), $t\in R^1$, for a random field X (C) indexed by a contour C or by a more general set. Assume that the X(C) is homogeneous in x, say of degree n, then we can appeal to the classical theory of variational calculus and to the modern theory of white noise analysis in order to discuss the innovation for the X (C.)

• Korean Chemical Engineering Research
• /
• v.56 no.4
• /
• pp.600-606
• /
• 2018

The influence of acidity in MTT zeolite of different Si/Al molar ratio's on the catalyst activity in methanol-to-olefin (MTO) reaction has been investigated. The Si/Al ratio was controlled with the Al content in the gel when N,N,N',N'-tetramethyl-1,3-diaminopropane was used as a structure directing agent (SDA). The gel composition was controlled to $20SiO_2$ : 30SDA : x (=0.25~1.25)$NaAlO_2$ : 2NaOH : $624H_2O$, which was subject to the hydrothermal synthesis at 433 K for 4 days. As the composition of sodium aluminate decreased, the particle size of MTT zeolite increased, and also the amount of acid sites decreased. To investigate the catalytic performance, MTO reaction was carried out at 673 K with $1.2h^{-1}$ WHSV. It was found that the H-MTT (1.00Al) catalyst with a Si/Al molar ratio of 24 maintained the methanol conversion over 90% for 900 min.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.36D no.12
• /
• pp.31-36
• /
• 1999

The $Mg._5Zn._5SiN_2:Tb$ and $Mg._5Zn._5SiN_2:Eu$ materials were synthesized and studied to develop new phosphors for thin-film electroluminescent device application. Photoluminescence and cathodoluminescence characteristics of the synthesized phosphors were similar to general emission spectra of Eu, Tb ion, respectively. The CIE color coordinates, threshold voltage and luminance of the $Mg._8Zn._2SiN_2:Eu$ thin-film electroluminescent device fabricated by electron-beam deposition system were x=0.47, y=0.46, 47V, and 23.5 cd/$cm^2$ at 80V, respectively. The capacitance-voltage and charge-voltage characteristics of the thin film electroluminescent devices were also measured.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.8
• /
• pp.15-23
• /
• 1998

Single crystalline I $n_{x}$G $a_{1-x}$ N thin film was grwon by MOCVD on (001) sapphire substrate for the blue light emitting devices. A good quality of I $n_{0.13}$G $a_{0.87}$N/GaN heterostructure grwon above 700.deg. C was confiremed by various characterization techniques of AFM, RHEED and DC-XRD. Through PL measurement at room temperautre for the Si-Zn co-doped I $n_{x}$G $a_{a-x}$N/GaN structure grwon at 800.deg. C to obtain blue wavelength emission, 460-470 nm and 425 nm emission peak were observed, which are believed to be from donor-to-acceptor pair transition and band edge emission of In/x/G $a_{1-x}$ N, respectively. The result of PL measurement of the undoped MQW I $n_{x}$G $a_{1-x}$ N layer at low temperature confirmed that the strong MQW peak was resulted by exciton from the GAN barrier and carrier of DA pair confined into the well layer.ll layer.yer.r.

• Journal of the Korean Vacuum Society
• /
• v.21 no.1
• /
• pp.29-35
• /
• 2012

The Hydrogenated silicon nitride (SiNx:H) using plasma enhanced chemical vapor deposition is widely used in photovoltaic industry as an antireflection coating and passivation layer. In the high temperature firing process, the $SiN_x:H$ film should not change the properties for its use as high quality surface layer in crystalline silicon solar cells. Initially PECVD-$SiN_x:H$ film trends were investigated by varying the deposition parameters (temperature, electrode gap, RF power, gas flow rate etc.) to optimize the process parameter conditions. Then by varying gas ratios ($NH_3/SiH_4$), the hydrogenated silicon nitride films were analyzed for its optical, electrical, chemical and surface passivation properties. The $SiN_x:H$ films of refractive indices 1.90~2.20 were obtained. The film deposited with the gas ratio of 3.6 (Refractive index=1.98) showed the best properties in after firing process condition. The single crystalline silicon solar cells fabricated according to optimized gas ratio (R=3.6) condition on large area substrate of size $156{\times}156mm$ (Pseudo square) was found to have the conversion efficiency as high as 17.2%. Optimized hydrogenated silicon nitride surface layer and high efficiency crystalline silicon solar cells fabrication sequence has also been explained in this study.

• Journal of the Korean Ceramic Society
• /
• v.42 no.3 s.274
• /
• pp.145-149
• /
• 2005

[ $Eu^{2+}$ ]-activated barium magnesium silicate phosphor, $(Ba,Ca)_{3}MgSi_{2}O_{8}:Eu_{x}$, has been known to emit blue-green light. In this study we report the manufacturing processes for producing either pure green or pure blue light-emitting phosphor from the same composition of $Ba_{2-x}Ca_{2}CaMgSi_{2}O_{8}:Eu_{x}$ (0 < x < 1) by controlling heat treatment conditions. Green light emitting phosphor of $Ba_{1.9}CaMgSi_{2}O_{8}:Eu_{0.1}$ can be produced under the sample preparation condition of highly reducing atmosphere of $23\%\;H_2/77\%\;N_2$, while blue or blue-green light emitting phosphor under reducing atmosphere of $5\~20\%\;H_2\;/\;95\~80\%$ N_2. The green light-emitting phosphors are prepared in two steps: firing at $800\~1000^{\circ}C$ for $2\~5$ h in air then at $1100\~1350^{\circ}C$ for 2-5 h under reducing atmo­sphere $23\%$ $H_2/77\%\;N_2$. The excitation spectrum of the green light-emitting phosphor shows a broadband of $300\~410$ nm. The emission spectrum has a maximum intensity at the wavelength of about 501 nm. The CIE value of green light emission is (0.162, 0.528). The pure blue light-emitting phosphors can be produced using the $Ba{2_x}CaMgSi_{2}O_{8}:Eu_{x}$ by introducing additional firing step at $1150\~1300^{\circ}C$ in air before the final reducing treatment. The XRD analysis shows that the green light-emitting phosphor mainly consisted of $Ba_{1.31}Ca_{0.69}SiO_{4}$ (JCPDS $\#$ 36-1449) and other minor phases i.e., $MgSiO_3$ (JCPDS $\#$ 22-0714) and $Ca_{2}BaMgSi_{2}O_{8}$ (JCPDS $\#$ 31-0128). The blue light-emitting phosphor mainly consisted of $Ca_{2}BaMgSi_{2}O_{8}$ phase.