• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• v.50 no.1
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• pp.13-26
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• 2024

Objectives: The aim of this study was to perform a comparative analysis of the ultrastructural and chemical composition of sialoliths, tonsilloliths, and antroliths and to describe their growth pattern. Materials and Methods: We obtained 19 specimens from 18 patients and classified the specimens into three groups: sialolith (A), tonsillolith (B), and antrolith (C). The peripheral, middle, and core regions of the specimens were examined in detail by histology, micro-computed tomography (micro-CT), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy, and transmission electron microscopy (TEM). Results: In the micro-CT, group A showed alternating radiodense and radiolucent layers, while group B had a homogeneous structure. Group C specimens revealed a compact homogeneous structure. Histopathologically, group A showed a laminated, teardrop-shaped, globular structure. Group B demonstrated degrees of immature calcification of organic and inorganic materials. In group C, the lesion was not encapsulated and showed a homogeneous lamellar bone structure. SEM revealed that group A showed distinct three layers: a peripheral multilayer zone, intermediate compact zone, and the central nidus area; groups B and C did not show these layers. The main elemental components of sialoliths were O, C, Ca, N, Cu, P, Zn, Si, Zr, F, Na, and Mg. In group B, a small amount of Fe was found in the peripheral region. Group C had a shorter component list: Ca, C, O, P, F, N, Si, Na, and Mg. TEM analysis of group A showed globular structures undergoing intra-vesicular calcification. In group B, bacteria were present in the middle layer. In the outer layer of the group C antrolith, an osteoblastic rimming was observed. Conclusion: Sialoliths had distinct three layers: a peripheral multilayer zone, an intermediate compact zone and the central nidus area, while the tonsillolith and antrolith specimens lacked distinct layers and a core.

• 한국공간정보시스템학회:학술대회논문집
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• 2002.03a
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• pp.83-88
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• 2002

최근 들어 무선인터넷 및 모바일 컴퓨팅 기술의 급속한 발전과 함께 향후 그 수요가 증대될 것으로 예상되는 분야가 위치기반 서비스(LBS: Location Based Service) 기술이다. 위치기반 서비스는 이동 통신을 통하여 사람 및 사물의 위치를 파악하고 이를 활용한 부가 응용 서비스로 국가 정보기술 인프라의 주요 영역을 점유하고 있는 GIS의 차세대 핵심 기술로 발전이 예상되는 분야이다[3][4]. 현재 3GPP나 3GPP2, OGC, LIF와 같은 여러 표준화 기구 및 산업체에서 위치기반 서비스와 이를 위한 시스템에 대한 연구가 진행중이며 위치기반 서비스를 위한 데이터 모델 표준화 연구는 거의 이루어지지 않고 있는 상황이다. 위치기반 서비스를 위한 데이터 표준화 모델은 이미 구축된 공간 데이터베이스의 재사용과 위치기반 서비스들간의 상호 운용성을 지원할 수 있어야 한다. 본 연구에서는 위치기반 서비스들 간의 상호 호환 및 통합을 가능하게 하고, 기존 공간데이터베이스와 연계하여 이 데이터를 위치기반 서비스에 활용하기 위한 공간 데이터 표준화 모델을 제안하고자 한다. 이를 위해 위치기반 서비스 표준화 사례를 조사하고, 위치기반 서비스를 위한 공간 데이터 모델을 제시하였다. 본 연구에서는 OpenLS의 위치기반 서비스를 기본서비스로 하고, OpenGIS의 공간 데이터 모델을 기반으로 네 가지 기본 위치 데이터 타입과 모델의 요구 사항을 포함하는 공간 데이터 표준모델을 개발하였다. 위치기반 공간 데이터 표준 모델은 위치기반 서비스와 데이터들과의 연계를 쉽게 하고, 위치기반 서비스들 간의 상호 운용성을 높이며, 기존 사용자 시스템의 수정 없이 인터페이스만을 추가함으로써 표준을 수용할 수 있다.\pm}153.2,\;116.1{\pm}94,\;29.4{\pm}30.3,\;45.1{\pm}44$로 Mel 10군과 Mel 30군이 유의적인 감소를 보였으나(p<0.05) 이들 두 군 간의 차이는 나타나지 않았다. 이상의 결과로, 랫트에서 복강수술 후 melatonin 10mg/kg투여가 복강 내 유착 방지에 효과적이라고 생각된다.-1}{\cdot}yr^{-1}$로서 두 생태계에 축적되었다.여한 3,5,7군에서 PUFA 함량이 증가한 반면, SFA 함량은 감소하여 P/S 비율, n-3P/n-6P 비율은 증가하는 경향이었으며 이는 간장의 인지질, 콜레스테롤 에스테르, 총 지질의 지방산조성에서도 같은 경향을 볼 수 있었다.X>$(C_{18:2})$와 n-3계 linolenic acid$(C_{18:3})$가 대부분을 차지하였다. 야생 돌복숭아 과육 중의 지방산 조성은 포화지방산이 16.74%, 단불포화지방산 17.51% 및 다불포화지방산이 65.73%의 함유 비율을 보였는데, 이 중 다불포화지방산인 n-6계 linoleic acid$(C_{18:2})$와 n-3계 linolenic acid$(C_{18:3})$가 지질 구성 총 지방산의 대부분을 차지하는 함유 비율을 나타내었다.했다. 하강하는 약 4일간의 기상변화가 자발성 기흉 발생에 영향을 미친다고 추론할 수 있었다. 향후 본 연구에서 추론된 기상변화와 기흉 발생과의 인과관계를 확인하고 좀 더 구체화하기 위한 연구가 필요할 것이다.게 이루어질 수 있을 것으로 기대된다.는 초과수익률이 상승하지만, 이후로는 감소하므로, 반전거래전략을 활용하는 경우 주식투자기간은 24개월

• Nuclear Engineering and Technology
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• v.5 no.1
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• pp.38-43
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• 1973

The spin-rotation constants of the proton and tile fluorine nucleus in C $H_4$, Si $H_4$, Ge $H_4$, C $F_4$, Si $F_4$ and Ge $F_4$ were determined experimentally by the molecular beam magnetic resonance method. From the Hamiltonian and the high field approximation, the quantized energy level is given by the following equation. W $m_{I}$ $m_{J}$=- $g_{I}$ $m_{I}$H- $g_{J}$ $m_{J}$H- $C_{av}$ $m_{I}$ $m_{J}$, where $c_{av}$ is one third of the trace of the C tensor. In the nuclear resonance experiment, the proton and the fluorine nuclear resonance curves consist of many unresolved lines given by v=- $g_{J}$H- $C_{av}$ $m_{I}$, and a Gaussian approximation is made to correlate $c_{av}$ to the experimentally obtained half-width of the resonance curve. In the rotational resonance experiment, the five resonance peaks as predicted by v=- $g_{I}$H- $c_{av}$ $m_{I}$, $m_{I}$=0, $\pm$1 and $\pm$2, were all observed. The magnitude of car was determined by measuring the frequency distance between two adjacent peaks. The sign of $c_{av}$ was determined by the side peak suppression technique. The technique is described, and the sign and magnitude of the spin-rotation constant cav are summarized as following: for C $H_4$ -10.3$\pm$0.4tHz(from the rotational resonance), for SiH +3.71$\pm$0.08kHz(from the nuclear resonance), for Ge $H_4$+3.79$\pm$0.13kHz(from the nuclear resonance), for C $F_4$, -6.81$\pm$0.08kHz(from the rotational resonance), for Si $F_4$, -2.46$\pm$0.06kHz(from the rotational resonance), and finally for Ge $F_4$-1.84$\pm$0.04kHz(from the rotational resonance).onal resonance).esonance).

• Journal of dental hygiene science
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• v.12 no.4
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• pp.329-334
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• 2012

This study was conducted to investigate the health behavior and the oral health status of workers engaged in a manufacturing business, and to analyze the related factors that affect their number if teeth loss. References for the study involved the materials of 526 individuals whose occupational categories are of a manufacturing business, amongst the survey participants in seven city or gun (county) area including Gyeongsan-si, Gyeongju-si, Mungyeong-si, Chilgok-gun, Yecheon-gun and Sangju-gun for the Community Health Survey (CHS) conducted in 2008. The CHS 2008 was conducted for three months from September to November 2008, and the survey details utilized in the study included the number of loss of teeth and teeth-brushing frequency, which was a part of CHS questionnaires and also additionally included for the study. The analysis with respect to the number of teeth loss on sociodemographic factors, was found to be significantly related to the age, educational status, average monthly income and occupation (p<.01). In the $x^2$-test in terms of the oral health status and the number of teeth loss, it was found that the teeth-brushing after lunch (p<.05) and an experience in an oral examination were statistically significant factors (p<.01). According to the multiple-regression analysis with the number of teeth loss being a dependent variable, the age, educational status, marital status and subjective oral health status were the statistically significant (p<.01). In conclusion, it is important to provide education on the teeth-brushing subjected to workers engaged in a manufacturing business with many dental caries and low educational status, and to recommend a regular scaling as well as to establish policy for creating conditions upon an oral health check-up and a tooth scaling and thus allow the maintenance of an oral health.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.11-11
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• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• Korean Journal of Crystallography
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• v.12 no.4
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• pp.197-206
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• 2001

A stoichiometric mixture of evaporating materials for AgInS₂ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films. AgInS₂ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE)system. The source and substrate temperatures were 680℃ and 410℃, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS₂ single crystal thin film mea-sured from Hall effect by van der Pauw method are 9.35×10/sup 16/㎤ and 294㎠/V·s at 293K respectively. The temperature dependence of the energy band gap of the AgInS₂ obtained from the absorption spectra was well described by the Varshni's relation , E/sub g/(T)=2.1365eV-(9.89×10/sup-3/eV/K/)T²(T+2930K). The crystal field and the spin-orbit splitting energies for the valence band of the AgInS₂ have been estimated to be 0.1541eV and 0.0129 eV, respectively, by means of the photocur-rent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the Γ/sub 5/ states of the valence band of the AgInS₂ /GaAs epilayer. The three photo-current peaks ovserved at 10K are ascribed to the A₁-, B-₁and C₁-exction peaks for n=1.

• Journal of the Speleological Society of Korea
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• no.74
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• pp.23-31
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• 2006

(1) Kaeusetgul Cave in Kimnyong-Ri, Jeju-Do, Korea. Kaeuset-gul Cave (KC) is situated in NNE area of the Manjang-gul cave (125m a.s.l.). Kaeuset-gul Cave lies at $126^{\circ}45'22"$ E in longitude and $33^{\circ}33'09"$ N in latitude. The coast belong Kimnyeong-Ri, Kujwa-eup, Jeju-Do. Altitude of the cave-entrance is 10m and length of the cave is 90m. Lava hand-specimens of KC are studied by X-ray fluorescence analysis (XRF). Average major chemical components of specimens from KC is as follows (wt.%); $SiO_2=47.03$, $TiO_2=3.16$, $Al_2O_3=18.41$, FeO*=13.53, MnO=0.14, MgO=5.05, CaO=8.66, $Na_2O=2.81$, $K_2O=0.67$, $P_2O_5=0.55$ in KC. Polarizing microscopic studyindicates that these specimens are described of alkali-basalt. (2) Tachibori Fuketsu (Cave) in Shizuoka Prefecture, Fuji Volcano, Japan Tachibori Fuketsu lies attoward the south in skirt of the Fuji volcano, $138^{\circ}42'04"$ east longitude and $35^{\circ}18'00"$ north latitude. The location of cave entrance is 2745, Awakura, Fujinomiya-shi, Shizuoka Prefecture. The above sea level and length of Tachibori Fuketsu are 1,170m and 82m. Average major chemical components of specimens from cave areas follows (Total 100 wt.%) ; ($SiO_2$=50.52, $TiO_2$=1.69, $Al_2O_3$=15.47, FeO*=13.13, MnO=0.20, MgO=5.97, CaO=9.17, $Na_2O$=2.52, $K_2O$=0.94 and $P_2O_5=0.40).$ Polarizing microscopic study indicates that these specimens may belong to tholeiite-basalt series. According to polarizing microscopic study, Au (Augite), P1 (Plagioclase), and O1 (Olivine) are contained as phenocryst minerals. (3) Gorely Cave in Kamchatka Peninsula, Russia Gorely caldera is located at the southeastern part of Kamchatka Peninsula, about 75km southwest of Petropavlovsk-Kamchatskiy.. Gorely lava caves are situated in NHE area of Mt. Gorely volcano (1829m a.s.1.). One of lava cave (Go-9612=K-1) lies at $158^{\circ}00'22"$ east longitude and $52^{\circ}36'18"$ north latitude. The elevation of cave entrance is about 990m a.s.1. and the main cave extends in the NNW direction for about 50m by 15m wide and 5m in depth. The cave of K-3is near the K-1 cave. "@Lava hand-specimens K-1 and K-3 caves are studied by X-ray fluorescence analysis and polarizing microscopic observation. Average major chemical components of specimens from these caves are as follows (wt.%) ;($SiO_2$=55.12, $TiO_2$=1.25, $Al_2O_3$=16.07, T-FeO* =9.41, MnO=0.16, MgO=5.01, CaO=7.21, $Na_2O$=3.39, $K_2O$=1.92, $P_2O_5$=0.45) and these values indicate that the Gorely basaltic andesite belong to high alumina basalt. Polarizing microscopic study indicates that these specimens are described of Augite andesite.

• The Korean Journal of Nuclear Medicine
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• v.31 no.4
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• pp.452-458
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• 1997

To evaluate the pinhole scintigraphic findings and its significance, authors retrospectively compared the pinhole bone scintigrams and corresponding radiograms of 16 lesions in 14 patients with fibrous dysplasia. They were diagnosed pathologically in 10 lesions and radiologically in 6 lesions. The mean age of patients was 41.1 years. The mean interval between two studies was 1.1 days. Locations were ribs 7, pelvic bone 4, clavicle 1, long bones 4(femur 2, tibia 1, humerus 1). The radiographic findings were as follows : the central portions were radiolucent(n=9), ground-glass opacities(n=5) or sclerotic(n=2) and the peripheral appearance were sclerotic rim(n=5), septation(n=7), cortical perforation (n=10) and invisible cortical thinning(n=9). Pinhole scintigraphic findings were as follows; Central portions showed normal 1+ uptake in 6 cases(radiolucent 5, ground-glass opacity 1), slightly increased 2+ upta- ke in 7 cases(radiolucent 4, ground-glass opacity 3), and marked 3+ uptake in 3 cases(ground-glass opacity 1, sclerotic 2). The 15 of 16 lesions showed more intense uptake in the peripheral portion: slightly increased 2+ uptake corresponding to the sclerotic rim(5/5) and unvisible cortical thinning(1/9), and irregular foci of marked 3 + uptake corresponding to septation(7/7), cortical perforation(10/10) and invisible cortical thinning (8/9). One of 16 lesions showed homogeneous 2+ uptake. In conclusion, pinhole scintigram provides information on regional activity of the fibrous dysplasia, which would be helpful in diagnosis, prediction of prognosis and determination of treatment plan.

• The korean journal of orthodontics
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• v.28 no.1 s.66
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• pp.43-49
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• 1998

The aim of this study were to measure and compare the stress level on three type brackets and each other material (stainless steel, ceramic) with tipping and torquing forces by using the finite element analysis and to design biomechanically favorable brackets. For this study, three kinds of brackets were selected(A:Transcend-RMO, B:Signature-Unitek, C:PAW: plain archwire appliance-applied for a patent in Yonsei Udiversity). The slot size of bracket was 0.022inch and the size of archwire was 0.0175x0.025inch and taper shaped archwire was used in PAW. Loading force in tipping was 4.27N and torquing force was 32.858N applied by archwire torsion with 19.7degree and 11.3 degree in C type bracket. The conclusions were that (1) The finite element method proved to be a useful tool in the stress analysis of orthodontic bracket subjected to various forces. (2) With tipping, the stresses were concentrated at the gingival wall of the wire slot where it meets the mesial bracket surface and the incisal wall of the wire slot where it meets the distal bracket surface and with torquing, the stresses were concentrated at the junction of the gingival or incisal wall and base of the slot. (3) The maximum stress value was higher in torquing force than tipping force and therefore it is desirable to design on the basis of torquing force. (4) It was considered that the change in material might be affect on the diminish of stress value in the place of stess concentration. (5) The maximum stress value was highest on PAW bracket when the tipping and torquing force was applied and therefore it would be desirable to use mechanically favorable material on PAW bracket.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.