• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.59-59
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• 2009

The efficiency of CMOS technology has been developed in uniform rate. However, there was a limitation of reducing the thickness of Gate-oxide since the thickness of Gate Dielectric is also reduced so an amount of leakage current is grow. In order to solve this problem, the semiconductor device which has a dual gate is used widely. This paper presents a method and a necessity for making the Gate Stack of TFT. Before Using test devices to measure values, stacking $SiN_x$ on a wafer test was conducted.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.5-6
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• 2009

In this paper, plasma ion implant is performed with $PH_3$ gas diluted by helium gas on P-type Si wafer (100). Spike Rapid Thermal Processing(RTP) annealing performed for 30~60 sec from $800\;^{\circ}C$ to $1000\;^{\circ}C$ in $N_2+O_2$ ambient. Crystalline defect is analyzed by Transmission Electron Microscope(TEM) and Double crystal X-ray Diffraction(DXRD). Contact resistivity($\rho c$), contact resistance(Rc) and sheet resistance(Rs) are analyzed by measuring Transfer Length Method(TLM) using 4155C analysis. As annealing temperature increase, Rs decrease and ${\rho}c$ and Rc increase at temperature higher than $850\;^{\circ}C$. We achieve low Rs, ${\rho}c$ and Rc with Plasma ion implant and spike RTP.

• Journal of the Korean Ceramic Society
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• v.29 no.7
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• pp.551-557
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• 1992

X-ray diffraction patterns, IR spectra and zeta-potentials of silicon nitride and $\beta$-Sialon powders were investigated before and after surface manipulations. $\beta$-Sialon powder was produced from Hadong Kaolin by the carbothermic reduction and simulataneous nitridation. Isoelectric points of as-prepared Si3N4 and $\beta$-Sialon powders were 8.4 and 7.4, respectively. After both silicon nitride and $\beta$-Sialon powders were oxidized at 80$0^{\circ}C$ for 24 h in air, the isoelectric points of these powders corresponded to that of silica (pH=3). I case of the addition of Darvan C as deflocculant, its isoelectric point was 3 and zeta-potential was nearly constant in the range of pH 5~12. When SN 7347 was used as deflocculant, its isoelectric point was 8.3 and zeta-potential over -156 mV was measured above pH 11.

• Proceedings of the Korean Vacuum Society Conference
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• 2005.02a
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• pp.58-58
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• 2005

• Proceedings of the Korean Vacuum Society Conference
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• 2005.02a
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• pp.103-103
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• 2005

• Advances in environmental research
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• v.6 no.4
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• pp.255-264
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• 2017

This work investigated the use of sugarcane bagasse ash (SCBA) generated by an energy cogeneration process in sugarcane mill as an alternative raw material in soil-cement brick. The SCBA obtained from a sugarcane mill located in southeastern Brazil was characterized with respect to its chemical composition, organic matter content, X-ray diffraction, plasticity, and pozzolonic activity. Soil-cement bricks were prepared by pressing and curing. Later, they were tested to determine technical properties (e.g., volumetric shrinkage, apparent density, water absorption, and compressive strength), present crystalline phases, and microstructural evolution. It was found that the SCBA contains appreciable amounts of silica ($SiO_2$) and organic matter. The results showed that the SCBA could be used in soil-cement bricks, in the range up to 30 wt.%, as a partial replacement for Portland cement. These results suggest that the SCBA could be valorized for manufacturing low-cost soil-cement bricks.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.617-619
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• 2008

Inorganic-organic hybrid multilayers were formed on the plastic substrate to enhance the barrier properties of substrate to water vapor and oxygen transport. Plasma pretreatment of substrate with $Ar/O_2$ lead to adhesion improvement and the densification of inorganic layer on the substrates. Combination of $SiO_xN_y$ layer and silanenanoclay composite layer offered quite good barrier properties (WVTR and OTR) to PES substrate.

• Journal of the Korean Ceramic Society
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• v.24 no.6
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• pp.553-560
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• 1987

Amorphous ferrites with composition B2O3-mBaO-nFe2O3 were prepared by an ultra rapidquenching technique. X-ray patterns and SEM reveal the products to be amrophous at room temperature. BaFe12O19 fine particles extracted from amorphous Ba-ferrites which additived Al2O3, SiO2, TiO2 and CoO have narrow size distribution, average 0.2$\mu\textrm{m}$, and coercive force, average 1400 Oe, increased with increasing TiO2 amounts. The obtained BeFe12O19 fine particles would be appreciated as perpendicular magnetic recording media.

• Journal of the Korean Ceramic Society
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• v.21 no.3
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• pp.253-258
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• 1984

This paper deals with the reaction-bonded silicon nitride I terms of its microstructural development during nitrida-tion. Silicon powder compacts were reacted with nitrogen at 1185$^{\circ}C$ and 13$65^{\circ}C$ according to the nitriding schedule. Microstructures of nitrided specimens were examined by means of optical and scanning electron microscope to discuss the nitridation or microstructural development at initial and intermediat stage of nitridation. Reaction products were also analysed by X-ray diffraction method at each stage of nitridation. The results indicate that ho-mogeneous and uniform microstructure with find porosity can be obtained only under the reaction condition. such as slow and relatively constant reaction rate with time.

• Proceedings of the KSME Conference
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• 2000.04a
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• pp.103-108
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• 2000

Since the ceramic/metal joint material is made at a high temperature, the residual stress development when it is cooled from bonding temperature to room temperature due to remarkable difference of thermal expansion coefficient between ceramic and metal. As residual stress at ceramic/metal joints influences the strength of joints, it is important to estimate residual stress quantitatively. In this study, it is attempted to estimate joint residual stress of $Si_3N_4/STS304$ joints quantitatively and to compare the strength of Joints. The difference of residual stress is measured when repeated thermal cycle is loaded under the conditions of the practical use of the ceramic/metal joint. And 4-point bending test is performed to examine the influence of residual stress on fracture strength. As a residual it is known that the stress of joint decreases as the number of thermal cycle increases.