• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.315-315
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• 2010

결정질 실리콘을 포함하는 태양전지의 광전효율은 표면에 입사되는 태양광의 반사를 제외하면 흡수된 광자에 의해 생성되는 전자-정공쌍의 상대적인 비율인 내부양자효율에 의존하게 된다. 실제 생성된 전자-정공쌍은 기판재료의 결정상태와 전기광학적 물성 등에 의해 일부가 재결합되어 2차적인 광자의 생성이나 열로서 작용하고 최종적으로 전자와 정공이 완전히 분리되고 전극에 포집되어 실질적인 유효전류로 작용한다. 16% 이상의 고효율 결정질 실리콘 태양전지양산이 요구되고 있는 현실에서 광전효율 개선 위해 가장 우선적으로 고려되어야 할 변수는 입력 태양광스펙트럼에 대한 결정질 실리콘 표면반사율을 최소화하여 광흡수를 극대화하는 것이라 할 수 있다. 이의 해결을 위하여 대기와 실리콘표면 사이의 굴절률차이가 크면 클수록 태양광스펙트럼에 대한 결정질 실리콘의 광반사는 증가하기 때문에 상대적으로 낮은 굴절률의 $SiO_x$나 $SiN_x$와 같은 반사방지막을 광입력 실리콘표면에 증착하여 광반사율 저감공정을 적용하고 있다. 이와 더불어 결정질 실리콘표면을 화학적으로 혹은 플라즈마이온으로 50-100nm 직경의 바늘형 피라미드형상으로 texturing 함으로 광자들의 다중반사 등에 기인하는 광흡수율의 증가를 기대할 수 있기 때문에 태양전지효율 개선에 긍정적인 영향을 미치는 것으로 이해된다. 본 실험에서도 고효율 다결정 실리콘 태양전지 양산공정에 적용 가능한 ICP-RIE기반 결정질 실리콘표면에 대한 texturing 공정기술을 연구하였다. Double Langmuir 플라즈마 진단시스템(DLP2000)을 적용하여 사용한 $SF_6$와 $O_2$ 개스유량과 챔버압력, 플라즈마 파워에 따른 이온밀도, 전자온도, 포화이온전류밀도, 플라즈마포텐셜의 공간분포를 모니터링하였고 texturing이 완료된 시료에 대하여 A1.5G 표준태양광스펙트럼의 300-1100nm 파장대역에서 반사율을 측정하여 그 변화를 관찰하였다. 본 연구에서 얻어진 결과를 간략히 정리하면 Si texturing에 가장 적합한 플라즈마파워는 100W, $SF_6/O_2$ 혼합비는 18:22, 챔버압력은 30mtorr 등이고 이에 상응하는 플라즈마의 이온밀도는 $2{\sim}3{\times}10^8\;ions/cm^3$, 전자온도는 14~15eV, 포화전류밀도는 $0.014{\sim}0.015mA/cm^2$, 플라즈마포텐셜은 38~39V 범위 등이었다. 현재까지 얻어진 최소 평균반사율은 14.2% 였으며 최적의 texturing패턴 플라즈마공정 조건은 이온에 의한 Si표면원자들의 스퍼터링과 화학반응에 의한 증착이 교차하는 플라즈마 에너지 및 밀도 상태인 것으로 해석된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.162-162
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• 2010

InSb has received great attentions as a promising candidate for the active layer of infrared photodetectors due to the well matched band gap for the detection of $3{\sim}5\;{\mu}m$ infrared (IR) wavelength and high electron mobility (106 cm2/Vs at 77 K). In the fabrication of InSb photodetectors, passivation step to suppress dark currents is the key process and intensive studies were conducted to deposit the high quality passivation layers on InSb. Silicon dioxide (SiO2), silicon nitride (Si3N4) and anodic oxide have been investigated as passivation layers and SiO2 is generally used in recent InSb detector fabrication technology due to its better interface properties than other candidates. However, even in SiO2, indium oxide and antimony oxide formation at SiO2/InSb interface has been a critical problem and these oxides prevent the further improvement of interface properties. Also, the mechanisms for the formation of interface phases are still not fully understood. In this study, we report the quantitative analysis of indium and antimony oxide formation at SiO2/InSb interface during plasma enhanced chemical vapor deposition at various growth temperatures and subsequent heat treatments. 30 nm-thick SiO2 layers were deposited on InSb at 120, 160, 200, 240 and $300^{\circ}C$, and analyzed by X-ray photoelectron spectroscopy (XPS). With increasing deposition temperature, contents of indium and antimony oxides were also increased due to the enhanced diffusion. In addition, the sample deposited at $120^{\circ}C$ was annealed at $300^{\circ}C$ for 10 and 30 min and the contents of interfacial oxides were analyzed. Compared to as-grown samples, annealed sample showed lower contents of antimony oxide. This result implies that reduction process of antimony oxide to elemental antimony occurred at the interface more actively than as-grown samples.

• Transactions on Electrical and Electronic Materials
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• v.10 no.1
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• pp.24-27
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• 2009

N-doped ZnO thin films were deposited on n-type Si(100) and homo-buffer layer, and undoped ZnO thin film was also deposited on homo-buffer layer by RF magnetron sputtering method. After deposition, all films were in-situ annealed at $800^{\circ}C$ for 5 minutes in ambient of $O_2$ with pressure of 10Torr. X -ray diffraction shows that the homo-buffer layer is beneficial to the crystalline of N-doped ZnO thin films and all films have preferable c-axis orientation. Atomic force microscopy shows that undoped ZnO thin film grown on homo-buffer layer has an evident improvement of smoothness compared with N-dope ZnO thin films. Hall-effect measurements show that all ZnO films annealed at $800^{\circ}C$ possess p-type conductivities. The undoped ZnO film has the highest carrier concentration of $1.145{\times}10^{17}cm{-3}$. The photoluminescence spectra show the emissions related to FE, DAP and many defects such as $V_{Zn}$, $Zn_O$, $O_i$ and $O_{Zn}$. The p-type defects ($O_i$, $V_{Zn}$, and $O_{Zn}$) are dominant. The undoped ZnO thin film has a better p-type conductivity compared with N-doped ZnO thin film.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.21 no.10
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• pp.1541-1550
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• 1997

Since the ceramic/metal joint material is made at a high temperature, the residual stress develops when it is cooled from bonding temperature to room temperature due to remarkable difference of thermal expansion coefficient between ceramic and metal. As residual stress at ceramic/metal joints influences the strength of joints, it is important to estimate residual stress quantitatively. In this study, it is attempted to estimate joint residual stress of Si$_3$N$_4$STS304 joints quantitatively and to compare the strength of joints. The difference of residual stress is measured when repeated thermal cycl is loaded, under the conditions of the practical use of the ceramic/metal joint. The residual stress increases at 1 cycle of thermal load but decreases in 3 cycles to 10 cycles of thermal load. And 4-point bending test is performed to examine the influence of residual stress on fracture strength. As a result, it is known that the stress of joint decreases as the number of thermal cycle increases.

• Korean Journal of Materials Research
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• v.26 no.1
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• pp.54-60
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• 2016

We have investigated the crystallization mechanism of the lithium disilicate ($Li_2O-2SiO_2$, LSO) glass particles with different sizes by isothermal and non-isothermal processes. The LSO glass was fabricated by rapid quenching of melt. X-ray diffraction and differential scanning calorimetry measurements were performed. Different crystallization models of Johnson-Mehl-Avrami, modified Ozawa and Arrhenius were adopted to analyze the thermal measurements. The activation energy E and the Avrami exponent n, which describe a crystallization mechanism, were obtained for three different glass particle sizes. Values of E and n for the glass particle with size under $45{\mu}m$, $75{\sim}106{\mu}m$, and $125{\sim}150{\mu}m$, were 2.28 eV, 2.21 eV, 2.19 eV, and ~1.5 for the isothermal process, respectively. Those values for the non-isothermal process were 2.4 eV, 2.3 eV, 2.2 eV, and ~1.3, for the isothermal process, respectively. The obtained values of the crystallization parameters indicate that the crystallization occurs through the decreasing nucleation rate with a diffusion controlled growth, irrespective to the particle sizes. It is also concluded that the smaller glass particles require the higher heat absorption to be crystallized.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.3
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• pp.341-346
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• 2010

The effect of specimen geometry on the bending and tensile strengths of dissimilar joints ($\beta-Si_3N_4/S45C$) with copper interlayers was evaluated. The average bending strength of specimens with circular cross sections was higher than that of specimens with rectangular cross sections. The crack initiation stress ($\sigma_i$) was successfully determined by the acoustic emission (AE) method and was approximately 60~80% of the bending strength. The residual stresses near the interfaces on the ceramic side were measured by X-ray diffraction before conducting the bending test. The bending strength and the crack initiation stress decreased with an increase in the residual stresses. The effect of the bending strain component was evaluated by the tensile testing; the tensile strength decreased with an increase in the bending strain component and was approximately 80% of the bending strength.

• Journal of muscle and joint health
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• v.23 no.1
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• pp.49-60
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• 2016

Purpose: The purpose of this study was to examine the effects of hypertension health school program performed in a public health center located in Y-si. Most interesting were the effects on hypertension-related knowledge, self-efficacy, self-care behavior and physiological parameters for hypertensive patients. Methods: Nonequivalent control group pretest-posttest design was employed. 45 patients with hypertension living in Y-si were assigned into an experimental group (n=23) or a control group (n=22). Experimental group was provided with the 8-weeks hypertension health school program from April 7 to May 20 in 2014. Data were analyzed with SPSS/WIN 21.0 using descriptive statistics, $x^2$-test, Fisher's exact test and t-test. Results: The result indicated a significant difference between the experimental group and control group in the scores of hypertension-related knowledge (t=-10.97, p<.001), self-efficacy (t=-4.56, p<.001), self-care behavior (t=-407, p<.001), physiological parameters including systolic blood pressure (t=2.18, p=.032) and diastolic blood pressure (t=2.74, p=.008) and cholesterol levels (t=5.04, p<.001). Conclusion: The conclusion of this study is that the hypertension self-help group program has a significant effect on the change of hypertension-related knowledge, self-efficacy and self-care behavior for hypertensive patients.

• Journal of Magnetics
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• v.10 no.3
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• pp.95-98
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• 2005

We report hole-induced ferromagnetism in diluted magnetic semiconductor $Zn_{0.99}Mn_{0.01}$ films grown on $SiO_2/Si$ substrates by reactive sputtering. The p-type conduction with hole concentration over $10^{18}\;cm^{-3}$ is achieved by P doping followed by rapid thermal annealing at $800^{\circ}C$ in a $N_2$ atmosphere. The p-type $Zn_{0.99}Mn_{0.01}O:P$ is carefully examined by x-ray diffraction and transmission electron microscopy. The magnetic measurements for $p-Zn_{0.99}Mn_{0.01}O:P$ clearly reveal ferromagnetic characteristics with a Curie temperature above room temperature, whereas those for $n-Zn_{0.99}Mn_{0.01}O:P$ show paramagnetic behavior. The anomalous Hall effect at room temperature is observed for the p-type film. This result strongly supports hole-induced room temperature ferromagnetism in $p-Zn_{0.99}Mn_{0.01}O:P$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.388-388
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• 2016

Chemical mist deposition (CMD) of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) was investigated with cavitation frequency f, solvent, flow rate of nitrogen, substrate temperature $T_s$, and substrate dc bias $V_s$ as variables for efficient PEDOT:PSS/crystalline (c-)Si heterojunction solar cells (Fig. 1). The high-speed camera and differential mobility analysis characterizations revealed that average size and flux of PEDOT:PSS mist depend on f, solvent, and $V_s$. The size distribution of mist particles including EG/DI water cosolvent is also shown at three different $V_s$ of 0, 1.5, and 5 kV for a f of 3 MHz (Fig. 2). The size distribution of EG/DI water mist without PEDOT:PSS is also shown at the bottom. A peak maximum shifted from 300-350 to 20-30 nm with a narrow band width of ~150 nm for PEDOT:PSS solution, whose maximum number density increased significantly up to 8000/cc with increasing $V_s$. On the other hand, for EG/water cosolvent mist alone, the peak maximum was observed at a 72.3 nm with a number density of ~700/cc and a band width of ~160 nm and it decreased markedly with increasing $V_s$. These findings were not observed for PEDOT:PSS/EG/DI water mist. In addition, the Mie scattering image of PEDOT:PSS mist under white bias light was not observed at $V_s$ above 5 kV, because the average size of mist became smaller. These results imply that most of solvent is solvated in PEDOT:PSS molecule and/or solvent is vaporized. Thus, higher f and $V_s$ generate preferentially fine mist particle with a narrower band width. Film deposition occurred when $V_s$ was impressed on positive to a c-Si substrate at a Ts of $30-40^{\circ}C$, whereas no deposition of films occurred on negative, implying that negatively charged mist mainly provide the film deposition. The uniform deposition of PEDOT:PSS films occurred on textured c-Si(100) substrate by adjusting $T_s$ and $V_s$. The adhesion of CMD PEDOT:PSS to c-Si enhanced by $V_s$ conspicuously compared to that of spin-coated film. The CMD PEDOT:PSS/c-Si solar cell devices on textured c-Si(100) exhibited a ${\eta}$ of 11.0% with the better uniformity of the solar cell parameters. Furthermore, ${\eta}$ increased to 12.5% with a $J_{sc}$ of $35.6mA/cm^2$, a $V_{oc}$ of 0.53 V, and a FF of 0.67 with an antireflection (AR) coating layer of 20-nm-thick CMD molybdenum oxide $MoO_x$ (n= 2.1) using negatively charged mist of 0.1 wt% 12 Molybdo (VI) phosphoric acid n-Hydrate) $H_3(PMo_{12}O_40){\cdot}nH_2O$ in methanol. CMD. These findings suggest that the CMD with negatively charged mist has a great potential for the uniform deposition of organic and inorganic on textured c-Si substrate by adjusting $T_s$ and $V_s$.

• Korean Journal of Soil Science and Fertilizer
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• v.44 no.6
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• pp.1112-1117
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• 2011

This study was conducted to recommend nitrogen (N) top dressing based on soil nitrate content for leaf perilla under forcing culture in Gumsan-gun and Milyang-si. Experimental design was the randomized complete block design for five N fertilization levels and conventional fertilization. Dry weight, nitrogen uptake, and the node number of leaf perilla were measured and soil nitrate contents were analyzed monthly. The amount of nitrogen uptake for growth of a node with two leaves was $2.2kg\;10a^{-1}$ for Gumsan site and $3.5kg\;10a^{-1}$ for Milyang site. Lower level of soil nitrate N concentration for standard N fertilization was determined as $10mg\;kg^{-1}$ for both sites. Soil depth, bulk density, utilization rate of soil nitrate N, and the amount of N uptake for growth of a node with two leaves were considered for calculation of upper level of soil nitrate N concentration. The upper levels of soil nitrate N concentration for no N fertilization were determined as $30mg\;kg^{-1}$ for Gumsan site and as $40mg\;kg^{-1}$ for Milyang site. Consequently the recommendation equations for the N top dressing were Y=-0.157X+4.71 for Gumsan site and Y=-0.1667X+6.6667 for Milyang site.