• Journal of the Korean Ceramic Society
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• v.23 no.5
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• pp.17-24
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• 1986

β'-Sialon with different compositions was synthesized by the carbothermal reduction-nitridation of compacts containing kaolin graphite and silicon or aluminum at temperature of 1300-1450℃ under flowing gas of 90% N2-10% H2 or 20hrs. Quantitative analysis of minerals which were formed in the specimens was carried out by using the calibration curve which has been prepared from X-ray diffraction patterns. The obtained results were as follows : 1. In the formation of β'-Sialon by carbothermal reduction-nutridation of Si-Al-O-C system mixtures at 1400℃ for 20hrs. (2) β'-Sialon as a major mineral and α-Al2O3 as a minor mineral were identified in the specimen which was prepared of kaolin and graphite. (3)α-Al2O3 and 15R as a minor minerals were measured in the specimen which was prepared of kaolin aluminum and graphite. (4) AlN instead of α-Al2O3 and 15R was formed in the compacts that excess graphite(=35 wt%) was added to the mixture of kaolin and aluminium. 2. As the reaction time and temperature were increased the formation of β'-Sialon was increased whereas the phases of mllite SiC and Si2ON2 were decreased gradually.

• Electrical & Electronic Materials
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• v.7 no.4
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• pp.331-340
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• 1994

Polysilicon on insulator has been recrystallized by zone melting recrystallization method with graphite strip heaters. Experiments are performed with non-seed SOI structures. When the capping layer thickness of Si$\_$3/N$\_$4//SiO$\_$2/ is 2.0.mu.m, grain boundaries are about 120.mu.m spacing and protrusions reduced. After the seed SOI films are annealed at 1100.deg. C in NH$\_$3/ ambient for 3 hours, the recrystallized silicon surface has convex shape. After ZMR process, the tensile stress is 2.49*10$\^$9/dyn/cm$\^$2/ and 3.74*10$\^$9/dyn/cm$\^$2/ in the seed edge and seed center regions. The phenomenon of convex shape and tensile stress difference are completely eliminated by using the PSG/SiO$\_$2/ capping layer. The characterization of SOI films are showed that the SOI films are improved in wetting properties. N channel SOI MOSFET has been fabricated to investigate the electrical characteristics of the recrystallized SOI films. In the 0.7.mu.m thickness SOI MOSFET, kink effects due to the floating substrate occur and the electron mobility was calculated from the measured g$\_$m/ characteristics, which is about 589cm$\^$2//V.s. The recrystallized SOI films are shown to be a good single crystal silicon.

• Bulletin of the Korean Chemical Society
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• v.34 no.4
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• pp.1127-1130
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• 2013

Formation of the monodisperse submicrospheres consisting of ionic palladium(II) complexes, $[(Me_4en)Pd(L)]_2(X)_4$($Me_4en$ = N,N,N',N'-tetramethylethylenediamine; L = bis(4-(4-pyridylcarboxyl)phenyl)methane; $X^-=BF_4{^-}$ and $ClO_4{^-}$), has been carried out without any templates or additives. The submicrospheres were coated with silicates, and then calcined in air at $550^{\circ}C$ for 1 h, to efficiently form hollow-spherical $SiO_2$ submicro-reactors dotted with palladium(0) nanoparticles (PdNPs). That is, the submicrospheres act as both a template and a source of the palladium metal nanoparticles. The submicro-reactors containing nano-catalysts have been characterized by means of SEM, TEM, and XPS. Notably, the reactors were proved to be very effective for Suzuki-Miyaura cross-coupling and hydrogenation reactions.

• Journal of Korea Foundry Society
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• v.5 no.4
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• pp.271-282
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• 1985

In order to investigate the mold reaction characteristics of Mn steel and Cr steel castings individually, the mold reaction products were examined by scanning electron microscopy, electron prove microanalyzer and X-ray diffractometer. From this experiment, the results were summarized as follows: 1) The mold reaction depth increased with increase of Mn content, while it decreased with increase of Cr content. 2) Mold reaction depth decreased with Mn content at $1200^{\circ}C$. 3) Mn, among the reaction products, forms a low fusion silicate, Mn $O.SiO_2$ while Cr forms a stable oxide, $CrO_3$ which hindering the reaction between FeO and $SiO_2$ thus the formation of $FeO.SiO_2$ was depressed.

• Journal of Sensor Science and Technology
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• v.23 no.6
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• pp.392-396
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• 2014

The 2-dimensional silicon vertical Hall devices, which are sensitive to X,Y components of the magnetic field parallel to the surface of the chip, are fabricated using a modified bipolar process. It consists of the thin p-layer at Si-$SiO_2$ interface and n-epi layer to improve the sensitivity and influence of interface effect. Experimental samples are a sensor type K with and type J without $p^+$ isolation dam adjacent to the center current electrode. The results for both type show a more high sensitivity than the former's 2-dimensional vertical Hall devices and a good linearity. The measured non-linearity is about 0.8%. The sensitivity of type J and type K are about 66 V/AT and 200 V/AT, respectively. This sensor's behavior can be explained by the similar J-FET model.

• Proceedings of the Optical Society of Korea Conference
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• 2009.02a
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• pp.491-492
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• 2009

We have fabricated a microlens integrated silicon (Si) structure for optical interconnects. To form microlenses, the Si wafer was wet-etched with $SiN_x$ mask in a HF:$HNO_3:C_2H_4O_2$ solution and then the holes were filled with a AZ9260 photoresist. The focal length of microlens increased in proportional to its radius of curvature (ROC). For the ROC of $100-161{\mu}m$, the focal lengths were obtained approximately between $160{\mu}m$ and $310{\mu}m$, in an agreement with the simulated values using a ray tracing method.

• Korean Journal of Materials Research
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• v.7 no.8
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• pp.640-645
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• 1997

Pd게이트 MOS센서의 수소검지특성에 Pd 박막의 증착조건이 미치는 영향에 대해서 조사였다. rf power의 증가와 증착온도의 증가는 모두 센서의 감도와 초기반응속도를 감소시켰으며 rf power의 변화보다는 증착온도의 변화에 의한 효과가 현저하였다. 절연막을 Si$_{x}$N$_{y}$ /SiO$_{2}$로 대신한 결과 SiO$_{2}$에서돠는 달리 시간이 지남에 따라 평탄대역전압이 여러 단계로 변화하는 양상을 보였다. rf power, 증착온도, 기판의 변화가 MOS 센서의 감도나 초기반응속도등의 센서특성에 영향을 미친다는 사실을 확인할 수 있었다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.6
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• pp.754-757
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• 1986

Boron monophosphide(100) was eitaxially grown on Si(100) substrate by thermal reaction of B2H6 and PH3 in hydrogen ambient. In an LPCVD system, the growth condition was studied as a function of gas mixture composition and temperature. For the growth temperature of 950\ulcorner in the constant flow rate (partial pressure) of B2H6, n-BP with c(2x2) surface structure was obtained in the PH3 partial pressure of 300-500 cc/min. On the other hand, for the growth temperature of 1080\ulcorner, p-BP with surface structure was observed for the PH3 partial pressure of 400-500cc/min.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.4
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• pp.143-148
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• 2019

We have successfully fabricated high aspect-ratio GaN-based nanowires on Si substrates using molecular beam epitaxy (MBE) system for high-efficiency hydrogen generation of photoelectrochemical water splitting. Scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) demonstrated that p-GaN:Mg and p-InGaN nanowires were grown vertically on the substrate with high density. Furthermore, it was also confirmed that the emission wavelength of p-InGaN nanowire can be adjusted from 552 nm to 590 nm. Such high-aspect ratio p-InGaN nanowire structure will be a solid foundation for the realization of ultrahigh-efficiency photoelectrochemical water splitting through sunlight.

• Journal of KIISE:Computer Systems and Theory
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• v.27 no.5
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• pp.464-474
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• 2000

All-to-all personalized communication, or complete exchange, is at the heart of numerous applications, such as matrix transposition, fast Fourier Transform(FFT), and distributed table lookup.We present an efficient all-to-all personalized communication algorithm for a 2D torus inwormhole-routed networks. Our complete exchange algorithm adopts divide-and-conquer approach toreduce the number of start-up latency significantly, which is a good metric for network performancein wormhole networks. First, we divide the whole network into 2x2 basic cells, After speciallydesignated nodes called master nodes have collected messages to transmit to the rest of the basic cell,only master nodes perform complete exchange with reduced network size, N/2 x N/2. When finishedwith this complete exchange in master nodes, these nodes distribute messages to the rest of the masternode, which results in the desired complete exchange communication. After we present our algorithms,we analyze time complexities and compare our algorithms with several previous algorithms. And weshow that our algorithm is efficient by a factor of 2 in the required start-up time which means thatour algorithm is suitable for wormhole-routed networks.