Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

Some Crystalline Properties and Growth Condition of BP(100)Epitaxially Grown on Si(100) Substrates

Si(100) 기판위에 에피텍시된 BP(100)의 성장조건 및 결정성

  • Kim, Chul Ju (Dept. of Elec. Eng., Seoul City Univ.) ;
  • Koh, Youn Kyu (Dept. of Physics, Yonsei Univ.) ;
  • Ahn, Chul (Dept. of Elec. Eng., Seokang Univ.)
  • 김철주 (서울시립대학 전자공학과) ;
  • 고연규 (연세대학교 물리학과) ;
  • 안철 (서강대학교 전자공학과)
  • Published : 1986.06.01
Download PDF
⟨ Previous Next ⟩

Abstract

Boron monophosphide(100) was eitaxially grown on Si(100) substrate by thermal reaction of B2H6 and PH3 in hydrogen ambient. In an LPCVD system, the growth condition was studied as a function of gas mixture composition and temperature. For the growth temperature of 950\ulcorner in the constant flow rate (partial pressure) of B2H6, n-BP with c(2x2) surface structure was obtained in the PH3 partial pressure of 300-500 cc/min. On the other hand, for the growth temperature of 1080\ulcorner, p-BP with surface structure was observed for the PH3 partial pressure of 400-500cc/min.

Keywords