• Transactions on Electrical and Electronic Materials
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• v.6 no.6
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• pp.245-248
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• 2005

The physical and electrical properties of polycrystalline $\beta$-SiC were studied according to different nitrogen doping concentration. Nitrogen-doped SiC films were deposited by LPCVD(1ow pressure chemical vapor deposition) at $900^{\circ}C$ and 2 torr using $100\%\;H_2SiCl_2$ (35 sccm) and $5 \%\;C_2H_2$ in $H_2$(180 sccm) as the Si and C precursors, and $1\%\;NH_3$ in $H_2$(20-100 sccm) as the dopant source gas. The resistivity of SiC films decreased from $1.466{\Omega}{\cdot}cm$ with $NH_3$ of 20 sccm to $0.0358{\Omega}{\cdot}cm$ with 100 sccm. The surface roughness and crystalline structure of $\beta$-SiC did not depend upon the dopant concentration. The average surface roughness for each sample 19-21 nm and the average surface grain size is 165 nm. The peaks of SiC(111), SiC(220), SiC(311) and SiC(222) appeared in polycrystalline $\beta$-SiC films deposited on $Si/SiO_2$ substrate in XRD(X-ray diffraction) analysis. Resistance of nitrogen-doped SiC films decreased with increasing temperature. The variation of resistance ratio is much bigger in low doping, but the linearity of temperature dependent resistance variation is better in high doping. In case of SiC films deposited with 20 sccm and 100 sccm of $1\%\;NH_3$, the average of TCR(temperature coefficient of resistance) is -3456.1 ppm/$^{\circ}C$ and -1171.5 ppm/$^{\circ}C$, respectively.

• Analytical Science and Technology
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• v.7 no.2
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• pp.187-191
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• 1994

A reactive intermediate 1,2-dihydropyridine derivative 2 has been prepared and isolated from the reaction of pyridine with $^tBuLi$ and trimethylchlorosilane in nonpolar condition at low temperature 2 has characterized by $^1H-NMR$ fine structure analysis with SPINX3. The mechanistic information of formation of 2 was obtained from synthesized 2,5-disubstituted pyridine derivatives 3 and 4.

• Bulletin of the Korean Chemical Society
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• v.18 no.6
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• pp.618-622
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• 1997

The polysiloxane-bridged dinuclear metallocenes $[(SiMe_2O)_n-SiMe_2(C_5H_4)_2][(C_9H_7)ZrCl_2]_2$ (n=1 (7), 2 (8), 3 (9)) have been generated as a model complex for the immobilized metallocene at silica surface by treating the respective disodium salts of the ligands with 2 equivalents of $(C_9H_7)ZrCl_3$ in THF. All three complexes are characterized by $^1H$ NMR and measurement of metal content through ICP-MS. It turned out that the values of ${\Delta}{\delta}=[{\delta}_d-{\delta}_p]$, the chemical shift difference between the distal $({\delta}_d)$ and proximal $({\delta}_p)$ protons, for the produced dinuclear compounds (0.47 for 7, 0.49 for 8, and 0.5 for 9) were larger than the Δδ value of the known ansa-type complex holding the same ligand as a chelating one, that is just the opposite to the normal trend. In order to compare polymerization behavior of the dinuclear metallocene with the corresponding mononuclear metallocene, (Cp)$(C_9H_7)ZrCl_2$ was separately prepared. To investigate the catalytic properties of the dinuclear complexes and mononuclear metallocenes ethylene polymerization has been conducted in the presence of MMAO. The polymerization results display the typical activity dependence on polymerization temperature for all complexes. The most important feature is that the polymers from the dinuclear metallocenes represent enormously improved molecular weight compared with the polymer from the corresponding mononuclear metallocene. In addition, the influence of the nature of the bridging ligand upon the reactivities of the dinuclear metallocenes has also been observed.

• Bulletin of the Korean Chemical Society
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• v.17 no.11
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• pp.1040-1044
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• 1996

The catalytic dehydrocoupling of bis(1-sila-3-butyl)benzene, 1 by Cp2ZrCl2/Red-Al and Cp2ZrCl2/n-BuLi combination catalysts yielded a mixture of oily and solid polymers. While the catalytic dehydrocoupling of 2-phenyl-l,3-disilapropane, 2 by Cp2ZrCl2/n-BuLi combination catalyst produced a mixture of oily and solid polymers, the catalytic redistribution/dehydrocoupling of 2 by Cp2ZrCl2/Red-Al combination catalyst gave oily polymer. The dehydrocoupling of 1 and 2, unless the prior silane redistribution occurs, seems to initially produce a low-molecular-weight polymer, which then undergoes an extensive cross-linking reaction of backbone Si-H bonds, leading to an insoluble polymer.

• Journal of the Korean Ceramic Society
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• v.34 no.9
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• pp.941-948
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• 1997

CuCl nanocrystallites dispersed nonlinear optical silica and borosilicate glasses were fabricated by sol-gel process. CuCl powder was dissolved in TEOS(Si(OC2H5)4) and TMB((CH3O)3B), precursors of silica and borosilicate glasses, with ethanol, water and HCl, and precipitated through the heat treatment in the matrix glass. The optical properties of CuCl doped glasses were measured using the spectrophotometer at room temperature and low temperature(77K); Z1, 2 and Z3 exciton peaks from the absorption spectra, were observed at about 370 nm and 380 nm, respectively. The average radius of nanocrystallites, calculated from the blue shift of Z3 excitons, was measured according to annealing temperature and time. The precipitation temperature of CuCl nanocrystallites was decreased when boron was added to silica glass. Increase of annealing temperature and time made average radius of nanocrystallites saturated about 2 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.12
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• pp.1078-1084
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• 2006

Impurity contamination induced by $CF_4\;and\;HBr/Cl_2/O_2$ plasma etching on Si surface was examined by using surface spectroscopes. XPS(x-ray photoelectron spectroscopy) surface analysis showed that F of 0.4 at % exists in the surface layer in the form of Si-F bonding but Br and Cl are below the detection limit $(0.1{\sim}1.0%)$ of the spectroscope. Static-SIMS(secondary ion mass spectrometry) surface analysis showed that the etched Si surface was contaminated with etching gas elements such as H, F, Cl and Br, and they existed to the depth of about $20{\sim}40nm$. The etched Si surface was treated with three different methods that were HF dip, thermal oxidation followed by HF dip and oxygen-plasma oxidation followed by HF dip. They showed an effect in reducing the impurity contamination and the oxygen-plasma oxidation followed by HF dipping method appears to be a little bit more effective.

• Resources Recycling
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• v.7 no.5
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• pp.52-57
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• 1998

Effect of Si in the electrochemical corrosion characteristics of Mg-Li-Al light alloy has been investigated by means of potentiodynamic polarization study. The elecrochemical behaviors were evaluated in 003% NaCl solution and the solution buffered with KH$_{2}PO_{5}{\cdot}$NaOH at room temperature. It was found that the addition of very small quantity of Si (0.48 wt%) in Mg-Li-Al light alloy increased corrosion rates and amount of corrosion products and decreated the pitting resistance of the alloy. From the results it was concluded that Si which is added to increase the strength of Mg-Li-Al alloy is harmful to corrosion properties of the alloy.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.153-161
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• 1992

A plasma has been used in a high vaccum, cold wall reactor for low temperature deposition of C54 TiSi2 and for in-situ surface cleaning prior to silicide deposition. SiH4 and TiCl4 were used as the silicon and titanium sources, respectively. The deposited films had low resistivities in the range of 15~25 uohm-cm. The investigation of the experimental variables' effects on the growth of silicide and its concomitant silicon consumption revealed that and were the dominant species for silicide formation and the primary factors in silicon consumption were gas composition ratio and temperature. Increasing silane flow rate from 6 to 9 sccm decreased silicon consumption from 1500 A/min to less than 30 A/min. Furthermore, decreasing the temperature from 650 to $590^{\circ}C$ achieved blanket silicide deposition with no silicon consumption. A kinetic model of silicon consumption is proposed to understand the fundamental mechanism responsible for the dependence of silicon consumption on SiH4 flow rate.

• Journal of the Korean Vacuum Society
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• v.3 no.4
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• pp.466-481
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• 1994

차세대 집적회로 제조공정에 있어 핵심기술인 선택적 단결정 실리콘 성장공정에 대한 이동현상, 열역학, 미시적 전산모사를 수행하여 다각적인 분석과 이해를 시도하였다. 첫째, 실리콘 단결정 성장 공 정에 가장 많이 사용되는 배럴 반응기를 대상으로 유한 요소법을 이용하여 이동현상적 이론연구를 수행 하였다. 반응기내의 기체속도 분포, SiH2Cl2 농도분포를 각각 구하였으며 압력, 기판온도, 총유량 HCl 유 량변화 등의주요공정변수가 증착율과 균일도 지수에 미치는 영햐을 고찰하였다. 이러한 연구를 통하여 저온, 저압, 총유량이 많고 첨가되는 HCl 유량이 작은 경우가 균일도 확보를 위하여 적합한 조업조건임 을 알수 있었다. 둘째 Si-H-Cl 계에 대한 열역학적 기체의 Cl/H비가 낮은 경우가 선택적 실리콘 증착 에 적합함을 알수 있었다. 셋째, Monte Carlo법을 이용한 선택적 실리콘 미세박막 성장패턴에 관한 이 론 연구를 수행하여 종횡비, 재방출, 표면확산에 따른 박막증착 패턴의 변화를 고찰하였으며 표면확산이 선택도 상실 현상의 중요한 원인이 될 수 있음을 발견하였다. 또한 최상의 선택도 확보를위해서는 낮은 부착계수와 낮은 표면확산계수를 유지해야 됨을 알수 있었다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.83-85
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• 2008

4성분계 Ti-Si-C-N 코팅막은 $TiCl_4$, $SiH_4$, $CH_4$, Ar, 그리고 $N_2$ 가스 혼합체를 이용하여 RF-PECVD 기법에 의해 Si 와 AISI 304 기판위에 합성하였다. Ti-C-(0.6)-N(0.4) 조성의 코팅막에 Si를 첨가함으로 Ti(C,N) 결정질은 줄어들고, Si3N4 및 SiC 비정질상이 나타났다. Ti-Si(9.2 at.%)-C-N의 조성에서 나노 크기의 nc-Ti(C,N) 결정질을 비정질 a-Si3N4/SiC가 둘러싸고 있는 형태의 나노 복합체를 나타내었다. 경도 24 Gpa의 Ti-C-N 코팅막은 Si를 첨가함으로 Ti-Si(9.2 at.%)-C-N 조성에서 46 Gpa의 최고 경도를 나타내었으며, 마찰계수의 경우에도 Ti-C-N 코팅막에 Si를 첨가함으로 크게 낮아졌다.