• Journal of the Korean Ceramic Society
• /
• v.32 no.4
• /
• pp.489-497
• /
• 1995

The DDS((CH3)2SiCl2)＋H2 gas mixture, where C atoms exist in excess in the molecules, was used for chemical vapor deposition of SiC in order to prevent codeposition of free Si in MTS(Ch3SiCl3)＋H2 system. The deposition rate was more rapid than MTS, however differ from that of MTS, it decreased after shwoing a maximum at 140$0^{\circ}C$. The stoichiometry was highly improved by using the DDS as a precursor, although there exist a little pyrolytic C at 150$0^{\circ}C$. The preferred orientation was (220) in MTS, however, it changed to (111) in DDS. The microstructure of the layer deposited at lower temperature were dense, however it grew coarse with the increase in the temperature.

• Bulletin of the Korean Chemical Society
• /
• v.32 no.1
• /
• pp.213-218
• /
• 2011

The scope of homogeneous Lewis acid-catalyzed benzo[N,N]-heterocyclic condensation was expanded to include the use of various metal salts not reported in the literature and $SnCl_2{\cdot}2H_2O$ was finally selected. Among various solid supports activated with $SnCl_2$, heterogeneous $SnCl_2/SiO_2$ proved to be the most effective and significantly higher conversions were achieved compared to $SnCl_2{\cdot}2H_2O$ itself. The results of TG-DTA and BET indicated that dispersed $SnCl_2$ coordinates with surface hydroxyl groups of silica leading to formation of stable Lewis acid sites. Low catalyst loading, operational simplicity, practicability and applicability to various substrates render this eco-friendly approach as an interesting alternative to previously applied procedures.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.37 no.6
• /
• pp.9-16
• /
• 2000

In order to achieve stiction-free polysilicon surfaces, we have suggested a new class of chemical coating precursors and confirmed their excellent characteristics. The strategy is to adopt dialkyldichlorosilanes (DDS, $R2SiCl_2$) instead of monoalkyltrichlorosilanes (MTS, $RSiCl_3$) such as octadecyltrichlorosilane (OTS) or 1H,1H2H,2H-perfluorodecyltrichlorosilane (FDTS). Dichlorodimethylsilane (DDMS, $(CH_3)2SiCl_2$) in this study is commercially available DDS with two short chains. DDMS in aprotic media spontaneously deposits on the hydrophilic polysilicon surface, which is completely changed to hydrophobic one. When polysilicon surface is exposed to DDMS solution at room temperature, anti-stiction property and hydrophobicity are clearly comparable to FDTS. DDMS is even superior to MTS in reliability and easy handling, which provides high yield. Since interactions among precursor molecules are reduced, conglomeration both in homogeneous solution and on surface can be effectively avoided. Even the cantilevers of 3 mm in length can be protected successfully from the stiction and the final quality of the modified surfaces is much less dependent on temperature. And no difference was found between the processes in ambient environment and in dry box. In addition, DDMS has advantages of remarkably reduced process time and low cost.

• Journal of Sensor Science and Technology
• /
• v.11 no.2
• /
• pp.102-110
• /
• 2002

The chemical and mechanical characteristics of a new surface modifier, dichlorodimethysilane (DDMS, $(CH_3)_3SiCl_2$), for stiction-free polysilicon surfaces are reported. The main strategy is to replace the conventional monoalkyltrichlorosilane(MTS, $RSiCl_3$) such as octadecyltrichlorosilane (ODTS) or 1H,1H,2H,2H-perfluorodecyltrichlorosilane (FDTS) with dialkyldichlorosilane (DDS, $R_2SiCl_2$) with twit short chains, especially DDMS. DDMS, with shorter chains in aprotic media, rapidly deposits on the chemically oxidized polysilicon surface at room temperature and successfully prevents long cantilevers of 3 mm in length from in-use as well as release stiction. DDMS-modified polysilicon surfaces exhibit satisfactory hydrophobicity, long term stability and thermal stability, which are comparable to those of FDTS. DDMS as an alternative to FDTS and ODTS provides a few valuable advantages; ease in handling and long-term storage in solution, low temperature-dependence and low cost. In addition to the new modifier molecule, the simplified process of direct release right after washing the modified surface with isooctane was proposed to cut the processing time.

• Bulletin of the Korean Chemical Society
• /
• v.8 no.4
• /
• pp.242-246
• /
• 1987

The hydrogen abstraction reactions of $SiH_4, SiH_2Cl_2 \;and\; SiHCl_3$ by ground state chlorine atoms generated photochemically from chlorine molecules have been studied at temperatures between 15 and $100^{\circ}C.$ The absolute rates for the reactions have been obtained by a competition technique using ethane as a competitor. The rate expressions ($in cm^3/mol/s$) are found to conform to an Arrhenius rate law: $k_{SiH_4} = (7.98 {\pm} 0.42) {\times} 10^{13}$ exp $[-(1250 {\pm}20)/T].$ $k_{SiH_2Cl_2} = (2.25 {\pm} 0.12) {\times} 10^{15}$ exp[-(1010 ${\pm}$ 10)/T]. $k_{SiHCl_3} = (9.04 {\pm} 0.28) {\times} 10^{14}\; exp[-(1200 {\pm} 10)/T].$ The activation energies obtained from this study represent the same trend as with the carbon analogues, while this trend was not found with respect to the bond dissociation energies among silicon compound homologues. These anomalous behaviors were interpreted in terms of electronic effects and of the structural differences between these compounds.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.7
• /
• pp.573-578
• /
• 2003

Low temperature selective epitaxial growth of Si and SiGe has been obtained using an industrial single wafer chemical vapor deposition module operating at reduced pressure. Epitaxial Si and heteroepitaxial SiGe deposition with Ge content about 20 % has been studied as extrinsic base for self-aligned heterojunction bipolar transistors(HBTs), which helps to reduce the parasitic resistance to obtain higher maximum oscillation frequencies(f$\_$max/). The dependence of Si and SiGe deposition rates on exposed windows and their evolution with the addition of HCl to the gas mixture are investigated. SiH$_2$Cl$_2$ was used as the source of Si SEG(Selective Epitaxial Growth) and GeH$_4$ was added to grow SiGe SEG. The addition of HCl into the gas mixture allows increasing an incubation time even low growth temperature of 675∼725$^{\circ}C$. In addition, the selectivity is enhanced for the SiGe alloy and it was proposed that the incubation time for the polycrystalline deposit on the oxide is increased probably due to GeO formation. On the other hand, when only SiGe SEG(Selective Epitaxial Growth) layer is used for extrinsic base, it shows a higher sheet resistance with Ti-silicide because of Ge segregation to the interface, but in case of Si or Si/SiGe SEG layer, the sheet resistance is decreased up to 70 %.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.23 no.6
• /
• pp.801-806
• /
• 1986

The effect of SiH2Cl2 -HCl gas on the growth rate of epitaxial layer is studied. The temperature, pressure and gas mixing ratio of SiH2Cl2 and HCl are varied to study the growth rate dependence and selective Si epitaxy. The P-n junction diode is fabricated on the epitaxial layer and electrical characteristics are examined. Also, using selective Si epitaxy, a possibility of thin dielectric isolation process, that gives an independent isolation width on the mask dimension, is examined.

• Bulletin of the Korean Chemical Society
• /
• v.26 no.2
• /
• pp.233-237
• /
• 2005

Cyclopentadiene compounds, 2-[CR'R(OMe)]-1,3-Me$_2C_5H_3$ (R, R' = 2,2'-biphenyl, 2) and 2-[CR'R(OSiMe$_3$)]-1,3-Me$_2C_5H_3$ (R, R' = 2,2'-biphenyl, 3; R = ph, R' = ph, 4; R = 2-naphthyl, R' = H, 5) are readily synthesized from 2-bromo-3-methoxy-1,3-dimethylcyclopentene (1). Reaction of the cyclopentadienes with Ti(NMe$_2$)$_4$ in toluene results in clean formation of the cyclopentadienyl tris(dimethylamido)titanium complexes, which are transformed to the trichloride complexes, 2-[CR'R(OMe)]-1,3-Me$_2C_5H_2$}TiCl$_3$ (R, R' = 2,2'-biphenyl, 6) and {2-[CR'R(OSiMe$_3$)]-1,3-Me$_2C_5H_2$}TiCl$_3$ (R, R' = 2,2'-biphenyl, 7; R = ph, R' = ph, 8; R = 2-naphthyl, R' = H, 9). Attempts to form C1-bridged Cp/oxido complexes by elimination of MeCl or Me$_3$SiCl were not successful. X-ray structures of 6, 7 and an intermediate complex {2-[Ph$_2$C(OSiMe$_3$)]-1,3-Me$_2C_5H_2$}TiCl$_2$(NMe$_2$) (10) were determined.

• Journal of the Korean Chemical Society
• /
• v.30 no.6
• /
• pp.526-531
• /
• 1986

The stability constants of 1,15-diaza-3,4:12,13-dibenzo-5,8,11-trioxacycloheptadecane (NenOdien H$_4$, L) with transition metal ions such as $Co^{2+},\;Ni^{2+},\;Cu^{2+},\;and\;Zn^{2+}$ have been determined by potentiometry in 95% methanol solution at 25$^{\circ}$C. The complex formation of the NenOdien $_4$ with the transition metal ions depends on the basicity of the donor atoms. The order of complex stability was Co(II) < Ni(II) < Cu(II) > Zn(II). The geometries of the complexes in solid state were discussed by visible-near infrared and infrared spectrophotometry, elemental analysis and electro-conductivity. The results suggest that the geometries of the solid complexes are octahedral for $[CoL_2(OH_2)Cl]Cl{\cdot}2H_2O$, $[NiL_2(OH_2)Cl]Cl{\cdot}2H_2O$, and $[ZnLCl_2]{\cdot}\frac{1}{2}H_2O$ and square pyramidal for [CuLCl]Cl, respectively.

• Journal of the Korean Chemical Society
• /
• v.55 no.4
• /
• pp.570-574
• /
• 2011

Large colorless single crystals of analcime with diameters up to 0.20 mm have been synthesized from gels with the composition of $3.00SiO_2$ : $1.50NaAlO_2$ : 8.02NaOH : $454H_2O$ : 5.00TEA. The fully $Na^+$-exchanged analcime have been prepared with aqueous 0.1 M NaCl (pH adjusted from 6 to 11 by dropwise addition of NaOH). The single-crystal structure of hydrated $|Na_{0.94}(H_2O)|[Si_{2.06}Al_{0.94}O_6]$-ANA per unit cell, a=13.703(3) ${\AA}$, has been determined by single-crystal X-ray diffraction technique in the orthorhombic space group Ibca at 294 K. The structure was refined using all intenties to the final error indices (using only the 1,446 reflections for which $F_o$ > $4{\sigma}(F_o))R_1/wR_2$ = 0.054/0.143. About 15 $Na^+$ ions are located at three nonequivalent positions and octahedrally coordinated. The chemical composition is $Na_{0.94}(H_2O)Si_{2.06}Al_{0.94}O_6$. The Si/Al ratio of synthetic analcime is 2.19 determined by the occupations of cations, 14.79, in the single-crystal determination work.