• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.297-300
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• 2005

The characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated using sputter deposited amorphous silicon (a-Si) precursor films are investigated. The a-Si films were deposited on flexible polymer substrates using argon-helium mixture gases to minimize the argon incorporation into the film. The precursor films were then laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated pMOS TFT showed field-effect mobility of $32.4cm^2/V{\cdot}s$ and on/off ratio of $10^6$.

• Journal of the Korean Geophysical Society
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• v.7 no.2
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• pp.113-120
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• 2004

Hydrochemical characteristics of deep groundwater at Surak-ri, Nonsan-gun, Chungnam Province was explained by major ion concentration, water type, and phase stability diagram. The area is composed of meta-sedimentary rock and quartz pophyry. The 5 boreholes where deep groundwater was sampled and analyzed are located on the meta-sedimentary rocks and drilling depth range of the wells is from 554 m to 928 m. pH, TDS, Na, and SiO2 values are high in the groundwater from meta-sedimentary area intruded by quartz pophyry, while Ca is high in the groundwater from meta-sedimentary area. K and Mg concentrations are low but F concentration is high both groundwater. The content of major anions is in the order of CO3(HCO3)>Cl>SO4(F) in both geology, while that of major cations shows the order of Na>Ca>K(Mg) in meta-sedimentary area intruded by quartz porphyry and a>Na>Mg>Na in meta-sedimentary area. Based on the phase equilibrium in the systems Na2O-Al2O3-SiO2-H2O and K2O-Al2O3-SiO2-H2O, the groundwater is saturated with respect to Quartz and more evolved compared with the natural mineral water. It is concluded that chemical evolution in the groundwater from meta-sedimentary area intruded by quartz porphyry, is nearly saturated with respect to feldspar, while the groundwater from meta-sedimentary area continue to proceed with increasing pH by reaction of feldspar.

• Journal of Food Hygiene and Safety
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• v.13 no.3
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• pp.252-257
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• 1998

Bamboo salt has been used as a traditional remedy for gastric ulcer and gastro-intestinal disorders. It is produced by baking the salt packed in bamboo cylinder nine times under the fire of pine tree. Three of commercially available bamboo salt products (bamboo salt A, B, and C) were characterized by qualitative and quantitative analyses using inductively coupled plasma (ICP) spectrometer, ion chromatograph (IC), X-ray diffractometer (XRD), and electron microscope (EM). Compared with crude salt, the contents of iron, silicon, potassium, and phosphate in the bamboo salt products were higher whereas the sulfate content was lower. Water-insoluble fraction of bamboo salts contained the following compounds; MgO, $SiO_2,\;Mg_2Si0_4,\;and\;CaMgSi0_4$. The study on the microscopic structures of the bamboo salts were shown to have smooth surface and fused shape compared with crude salt. Among the three bamboo salt products, product A was used to test a possible inhibitory effect on gastric acid secretion. Each test material (bamboo salt A, crude salt, and reagent-grade NaCl) was given orally to Sprague-Dawley rats at doses of 0.2, 1.0, and 2.0 g/kg for 28 days before pyrolus ligation. Twenty four hours after the last administration of the test materials, volume, pH, total acidity, and pepsin activity of gastric juice were measured by the Shay-ligation method. No significant differences were observed in the secretion of gastric acid between treated groups (bamboo salt-, crude salt- and reagent-grade NaCI-treated groups) and control group (distilled water-treated group). This result demonstrated that bamboo salt did not exert anti-ulcer activities in experimental animals used in the present study.

• Resources Recycling
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• v.22 no.2
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• pp.22-28
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• 2013

In the present study, the possibility of recovering and recycling the silicon carbide(SiC) from a silicon sludge by removing Fe and Si impurities was investigated. Si and SiC were separated from the silicon sludge using centrifugation. The separated SiC concentrate consisted of Fe, Si and SiC, in which Fe and Si were removed to recover the pure SiC. Leaching with acid/alkali solution was compared with the vapor-phase chlorination. The Fe concentration removed in the SiC was 49 ppm, and it was separated by leaching with 1 M HCl solution at $80^{\circ}C$ for 1 h. The Si concentration removed in the SiC was 860 ppm, and it was separated by leaching with 1M NaOH solution at $50^{\circ}C$ for 1 h. The SiC concentrate was chlorinated in a tubular reactor, 2.4 cm in diameter and 32 cm in length. The boat filled with SiC concentrate was located at the midpoint of the alumina tube, then, the chlorine and nitrogen gas mixture was introduced. The Fe and Si concentration removed in the SiC were 48 ppm and 405 ppm, respectively, at $500^{\circ}C$ reactor temperature, 4 h reaction time, 300 cc/min gas flow rate, and 10% $Cl_2$ gas mole fraction.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.156-156
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• 2011

Nanocrystalline $Ca_2Gd_8Si_6O_{26}$ (CGS) : $Sm^{3+}$ and CGS : $Tb^{3+}/Sm^{3+}$ phosphors were prepared by solvothermal reaction method for light emitting diode (LED) and field emission display (FED) applications. The XRD patterns of these phosphors confirmed their oxyapatite structure in the hexagonal lattice. The visible luminescence properties of these phosphors were investigated by exciting with ultraviolet (UV) or near-UV light and low voltage electron beam. The photoluminescence (PL) properties of $Ca_2Gd_8Si_6O_{26}$ (CGS) : $Sm^{3+}$ and CGS : $Tb^{3+}/Sm^{3+}$ phosphors were investigated as a function of $Sm^{3+}$ concentration. Cathodoluminescence (CL) properties were examined by changing the acceleration voltage. The CGS : $Sm^{3+}$ showed the dominant orange emission due to the $^4G_{5/2}{\rightarrow}^6H_{7/2}$ transition. The CGS : $Tb^{3+}/Sm^{3+}$ phosphor showed the green, white and orange emissions when excited with 275, 378, and 405 nm wavelengths, respectively. The chromaticity coordinates of these phosphors were comparable to or better than those of standard phosphors for LED or FED devices.

• Journal of the Korean Vacuum Society
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• v.5 no.1
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• pp.25-32
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• 1996

An ERD-TOF system is constructed for the nondestructive depth profiling of light elements in thin films in the range of several thousand angstroms. The particles, recoiled by 10 $MeV^{35}Cl$ projectiles, were detected by a Time-Of-Flight spectrometer composed of a MCP (Micro Channel Plate) and a SSB (Silicon Surface Barrier) detector. A two parameter data acquisition system composed of two PC's was constructed for registering simultaneous time and energy signals. A $Si_3N_4$/poly-Si/$SiO_2$/Si sample was anlayzed and the result is compared with RBS. The detection limit, maximum probable depth and depth resolution for light elements in silicon are about $4\times10^{14}atoms/\textrm{cm}^2$, 5, 000$\AA$ and 100$\AA$, respectively.

• The Journal of Engineering Geology
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• v.15 no.4 s.42
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• pp.391-405
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• 2005

Chemical and isotopic analysis for stream water, shallow groundwater, intermediate groundwater and deep groundwater was carried out to grasp hydrogeochemical characteristics of groundwater in the Heunghae area, Pohang city. Water type of stream water and shallow groundwaters is typified as Ca-Cl type, intermediate groundwater is $Na-HCO_3$, and deep groundwater is prominent in Wa-Cl type. $HCO_3^-\;and\;SiO_2$ in shallow groundwater are originated from weathering of silicate minerals, whereas those of deep groundwaters are resulted from weathering of carbonate minerals. Ca and Mg ions in both shallow and deep groundwaters are resulted from weathering of calcite and dolomite. $SO_4^{2-}$ in shallow groundwater is originated mainly from pyrite oxidation. As well depth increases, pH and TDS increase, but Eh and DO decrease. Alkali metal contents(K, Na, Li) increases as well depth increases, but alkali earth metal(Mg, Ca) and hi concentrations increase as well depth decreases. Anions, halogen elements(F, Cl, Br), and $HCO_3$ contents increase as well depth increases. The average stable isotope value of the groundwater of each depth is as follows; deep groundwater: ${\delta}^{18}O=-10.1\%o,\;{\delta}D=-65.8\%_{\circ}$, intermediate groundwater: ${\delta}^{18}O=-8.9\%_{\circ},\;{\delta}D=-59.6\%_{\circ}$, shallow groungwater : ${\delta}^{18}O=-8.0\%_{\circ},\;{\delta}D=-53.6\%_{\circ}$, surface water : ${\delta}^{18}O=-7.9\%_{\circ},\;{\delta}D=-53.3\%_{\circ}$ respectively.

• Journal of the Korean institute of surface engineering
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• v.31 no.3
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• pp.157-164
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• 1998

Effects of alloying elements on the pitting behavior of Ti-Al intermetalic compounds in the electrolytic soution containing Cl- were investigated through electrochemical tets and corrosion morphologies. Corrosion potential increased in the case of Cr addition to Ti-48%Al, whereas it decreased in the case of Si and B addition. The simultaneous addition of Cr and Si increased passive current density and decrosion corrosion potential. The passive current density of N addtion was higher than that of B addition in H2SO4 solution. With the addition of alloying elements, The pitting resistance decreased in order of TiAl>TiAlSi>TiAlN>TiAlB>TiAlCr and whin siumultaneous addition, it decreased in order of TiAlCrSi>TiAlCrBN>TiAlCrrN. The surface merohology after pitting test showed that the TiAl coataining Si had for fewer pits than that containing Cr and N simultaneously.

• Journal of the Korean Ceramic Society
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• v.28 no.6
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• pp.429-436
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• 1991

Silicon carbide has been grown by a chemical vapor deposition (CVD) technique using CH3SiCl3 and H2 gaseous mixture onto a graphite substrate. Based on the thermodynamic equilibrium studies and the suggestion that the deposition rate of SiC is controlled by surface reaction theoretical kinetic equation for CVD of silicon carbide has been proposed. The proposed theoretical kinetic equation for CVD of silicon carbide agreed well with the experimental results for the variation of the deposition rate as a function of the partial pressure of reactant gases. The Vikers microhardness of the SiC layer was about 3000∼3400 kg/$\textrm{mm}^2$ at room temperature.

• Journal of Integrative Natural Science
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• v.15 no.1
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• pp.19-25
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• 2022

The diarylsilyl compound, C₁₄H₁₂Br₄Si, was prepared from the reaction of 3,5-dibromophenyllithium with dimethyldichlorosilane, (CH₃)₂SiCl₂, at -78 ℃, can be a good synthon for derivatization to produce efficient host materials for organic light emitting diodes (OLEDs). Crystal structure analysis shows a slight deviation from ideal tetrahedral symmetry around the Si atom, whose conformation is effective in ensuring the maximum separation of the two phenyl rings and the two methyl substituents. The directions of the two aromatic rings are almost perpendicular to each other. The molecule exists as a monomer in the solid state.