• Journal of the Korean Physical Society
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• v.73 no.10
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• pp.1541-1545
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• 2018

We study lattice thermal conductivity of $Sb_2Te_3$ using molecular dynamics simulations. The interatomic potentials are fitted to reproduce total energy and elastic constants, and phonon properties calculated using the potentials are in reasonable agreement with first-principles calculations and experimental data. Our calculated lattice thermal conductivities of $Sb_2Te_3$ decrease with temperature from 150 K to 500 K. The in-plane lattice thermal conductivity of $Sb_2Te_3$ is higher than cross-plane lattice thermal conductivity of $Sb_2Te_3$, as in the case of $Bi_2Te_3$, which is consistent with the anisotropy of the elastic constants.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.5
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• pp.411-414
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• 2008

The germanium films were deposited by metal organic chemical vapor deposition using $Ge(allyl)_4$ precursors on TiAlN substrates. Deposition of germanium films was only possible with a presence of $Sb(iPr)_3$, which means that $Sb(iPr)_3$ takes a catalytic role by a thermal decomposition of $Sb(iPr)_3$ for Ge film deposition. Also, as Sb bubbler temperature increases, deposition rate of the Ge films increases at a substrate temperature of $370^{\circ}C$. The GeTe thin films were fabricated by MOCVD with $Te(tBu)_2$ on Ge thin film. The GeTe films were grown by the tellurium deposition at $230-250^{\circ}C$ on Ge films deposited on TiAlN electrode in the presence of Sb at $370^{\circ}C$. The GeTe film growth on Ge films depends on the both the tellurium deposition temperature and deposition time. Also, using $Sb(iPr)_3$ precursor, GeSbTe films with hexagonal structures were fabricated on GeTe thin films. GeSbTe films were deposited in trench structure with 200 nm*120 nm small size.

• Journal of the Korean Ceramic Society
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• v.45 no.5
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• pp.276-279
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• 2008

In this research, properties of $N_2$-doped $Sb_2Te_3$ thin film were evaluated using 4-point probe, XRD and AFM. $Sb_2Te_3$ material has faster crystallization rate than $Ge_2Sb_2Te_5$, but sheet resistance difference between amorphous and crystallization state is very low. This low sheet resistance difference decreases sensing margin in reading operation at PRAM device operation. Therefore, in order to overcome this weak point, $N_2$ gas was doped on $Sb_2Te_3$ thin film. Sheet resistance difference between amorphous and crystallized state of $N_2$-doped $Sb_2Te_3$ thin film showed about $10^4$ times higher than Un-doped $Sb_2Te_3$ thin film because of the grain boundary scattering.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.166-166
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• 2003

경제적 효율의 발전을 원칙으로 하는 종래의 틀을 넘어서서 환경공생형의 새로운 에너지 시스템의 개발에 대한 요구가 증대되어 지고 있다. 이러한 시대적 흐름에 부응하는 여러 가지 신재료의 개발에 관한 연구가 이루어지고 있다. 그 중에서 전기를 열로 열을 전기로 변환 시킬 수 있어서 폐열의 이용 및 전자냉각기술 등에 이용 가능한 열전변환재료가 커다란 기대를 모으고 있다. 열전재료는 사용온도 영역에 따라 여러 가지 재료가 개발되어 지고 있으며, 현재 상온부근 및 저온영역에서 응용 가능한 재료로써 Bi$_2$Te$_3$계 고용체에 관한 연구가 활발하게 진행되고 있다. 예를 들어, Bi$_2$Te$_3$ 고용체에서 Bi를 Sb으로 치환한 p-type의 (Bi,Sb)$_2$Te$_3$ 고용체와 Te을 Se으로 치환한 n-type의 Bi$_2$(Te,Se)$_3$ 고용체에 관한 연구가 이루어지고 있다. 최근 들어 Kutasov등은 종래에 P-type의 열전재료로써 높은 특성을 나타내는 것으로 알려진(Bi,Sb)$_2$Te$_3$ 고용체가 Sb의 치환량과 Te의 도핑량을 잘 조절하면 n-type의 높은 열전 특성을 나타낸다고 보고하였다. 본 연구에서는 과잉으로 첨가된 Te이 n-type (Bi,Sb)$_2$Te$_3$ 고용체에 미치는 영향을 보다 체계적으로 조사하기 위한 기초단계의 연구로써 Te을 0-0.9at.%로 과잉 첨가하여 제조한 고용체 및 소결체의 미세구조에 관하여 조사하였다.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.77-82
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• 2010

Effects of evaporation processes and a reduction annealing on thermoelectric properties of the Sb-Te thin films prepared by thermal evaporation have been investigated. The thin film evaporated by using the powders formed by crushing a $Sb_2Te_3$ ingot as an evaporation source exhibited a power factor of $2.71{\times}10^{-4}W/m-K^2$. The thin film processed by evaporation of the mixed powders of Sb and Te as an evaporation source showed a power factor of $0.12{\times}10^{-4}W/m-K^2$. The thin film fabricated by coevaporation of Sb and Te dual evaporation sources possessed a power factor of $0.73{\times}10^{-4}W/m-K^2$. With a reduction annealing at $300^{\circ}C$ for 2 hrs, the power factors of the films evaporated by using the $Sb_2Te_3$ ingot-crushed powders and coevaporated with Sb and Te dual evaporation sources were remarkably improved to $24.1{\times}10^{-4}W/m-K^2$ and $40.2{\times}10^{-4}W/m-K^2$, respectively.

• Korean Journal of Optics and Photonics
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• v.13 no.3
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• pp.215-222
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• 2002

Using an in-situ ellipsometer, we monitored the growth curve of optical recording media in real time. For confirmation of the thickness control using in-situ ellipsometry, we analyzed the deposited multi-layer sample made of Ge-Sb-Te alloy film and ZnS-Si0$_2$ dielectric films using an exsitu spectroscopic ellipsometer. The target material in the first sputtering gun is ZnS-SiO$_2$ as the protecting dielectric layer and that in the second gun is Ge$_2$sb$_2$Te$_{5}$ as the receding layer. While depositing ZnS-SiO$_2$, Ge$_2$Sb$_2$Te$_{5}$ and ZnS-SiO$_2$ films on c-Si substrate in sequence, we measured Ψ $\Delta$ in real time. Utilizing the complex refractive indices of Ge$_2$Sb$_2$Te$_{5}$ and ZnS-SiO$_2$ obtained from the analysis of spectroscopic ellipsometry data, the evolution of ellipsometric constants Ψ, $\Delta$ with thickness is calculated. By comparing the calculated evolution curve of ellipsometric constants with the measured one, and by analyzing the effect of density variation of the Ge$_2$Sb$_2$Te$_{5}$ recording layer on ellipsometric constants with thickness, we precisely monitored the growth rate of the Ge-Sb-Te multilayer and controlled the growth process. The deviation of the real thicknesses of Ge-Sb-Te multilayer obtained under the strict monitoring is post confirmed to be less than 1.5% from the target structure of ZnS-SiO$_2$(1400 $\AA$)IGST(200 $\AA$)$\mid$ZnS-SiO$_2$(200$\AA$).(200$\AA$).

• Journal of Powder Materials
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• v.3 no.4
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• pp.246-252
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• 1996

$Bi_{2}Te_{3}-Sb_{2}Te_{3}$, $Bi_{2}Te_{3}-Bi_{2}Se_{3}$ solid solutions are of great interest as materials for thermoelectric energy conversion. One of the key technologies to ensure the efficiency of thermoelectric device is to obtain chemically homogeneous solid solutions. In this work, the new process with rapid solidification followed by hot pressing was investigated to produce homogeneous thermoelectric materials. Characteristics of the materials were examined with XRD, SEM, EPMA-line scan and bending test. Property variations of the materials were investigated as a function of variables, such as excess Te quantity and hot pressing temperature. Quenched ribbons are very brittle and consisted of homogeneous $Bi_{2}Te_{3}$, $Sb_{2}Te_{3}$ solid solutions. When the process parameters were optimized, the maximum figure of merit was 3.073$\times$$10^{-3}K^{-4}$. The bending strength of the material, hot pressed at 45$0^{\circ}C$, was 5.87 kgf/${mm}^2$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2000.11a
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• pp.145-145
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• 2000

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1223-1224
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• 2006

The p-type $(Bi_{0.2}Sb_{0.8})_2Te_3/(Pb_{0.7}Sn_{0.3})$Te functional gradient material (FGM) was fabricated by hot-pressing the mechanically alloyed $(Bi_{0.2}Sb_{0.8})_2Te_3$ and the 0.5 at% $Na_2Te-doped$ $(Pb_{0.7}Sn_{0.3})Te$ powders. Also, the n-type $Bi_2(Te_{0.9}Se_{0.1})_3/PbTe$ FGM was processed by hot-pressing the mechanically alloyed $Bi_2(Te_{0.9}Se_{0.1})_3$ and the 0.3 wt% Bi-doped PbTe powders. With ${\Delta}T$ larger than $300^{\circ}C$, the p-type $(Bi_{0.2}Sb_{0.8})_2Te_3/(Pb_{0.7}Sn_{0.3})Te$ FGM exhibited larger thermoelectric output power than those of the $(Bi_{0.2}Sb_{0.8})_2Te_3$ and the 0.5 at% $Na_2Te-doped$ $(Pb_{0.7}Sn_{0.3})Te$ alloys. For the n-type $Bi_2(Te_{0.9}Se_{0.1})_3/PbTe$ FGM, the thermoelectric output power superior to those of the $Bi_2(Te_{0.9}Se_{0.1})_3$ and the 0.3 wt% Bi-doped PbTe was predicted at ${\Delta}T$ larger than $300^{\circ}C$.

• Journal of the Korean Institute of Telematics and Electronics
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• v.5 no.3
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• pp.1-8
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• 1968

This thermcelectrie generator devices have been determined for bismuth alloys, Sb2T and AnSb containing small amounts of doping materials. The thermoeleotric matermoelectric power;$\alpha$; resistivity; $\rho$, heatconduction; k, and temperature difference between cold and hot junction was measured. Generator consisting both B T + B S and B T+S T is better efficient than others containing another thermoceuple matarials. Its efficiency is 1.42%.