• Journal of Sasang Constitutional Medicine
• /
• v.18 no.1
• /
• pp.22-29
• /
• 2006

1. Objectives and Methods The original insect of $Q\'{\i}C\'{a}o$ is described as the larvae of Holotrichia diomphalia Bates (Scarabaeidae) in oriental medicine literatures. Traditionally $Q\'{\i}C\'{a}o$ inhabit on rotting wood, compost, and organic debris of soil or thatched roofs. They have the very important distinguishing mark that wriggle along on their back through rotting wood, compost etc. and they never do inflict the living crops. but, Holotrichia diomphalia Bates as the $Q\'{\i}C\'{a}o$ is not right because of many questions, such as Holotrichia are the harmful insects eat into farm products, and those don't match well with korean farmers' moods if their cultivated lands are turned over for collecting $Q\'{\i}C\'{a}o$ larvae, and especially they don't go on using their back. 2. Results and Conclusions Accordingly, in the conclusion of this subject it is reported that the original insect of $Q\'{\i}C\'{a}o$ is the larvae of Korean Cetoniidae(Coleoptera; Scarabaeoidea) insects including Genus Protaetia Burmeister(Protaetia orientalis submarmorea Burmeister, P.brevitarsis seulensis Kolbe, etc.) and the larvae of Korean Cetoniinae insects. Also, those were the original larvae of $Q\'{\i}C\'{a}o$ that were applied to not only 'DongEuiBoGam' but also 'Dongyi Suse Bowon prescriptions'. Those feed on rotting wood, compost, and organic debris of soil or thatched roofs.

• Journal of the Chungcheong Mathematical Society
• /
• v.20 no.4
• /
• pp.433-438
• /
• 2007

Let $\mathbb{A}=\mathbb{F}_q[T]$ and $k=\mathbb{F}_q(T)$. Assume q is odd, and fix a prime divisor ${\ell}$ of q - 1. Let P be a monic irreducible polynomial in A whose degree d is divisible by ${\ell}$. In this paper we define a subgroup $\tilde{C}_F$ of $\mathcal{O}^*_F$ which is generated by $\mathbb{F}^*_q$ and $\{{\eta}^{{\tau}^i}:0{\leq}i{\leq}{\ell}-1\}$ in $F=k(\sqrt[{\ell}]{P})$ and calculate the unit-index $[\mathcal{O}^*_F:\tilde{C}_F]={\ell}^{\ell-2}h(\mathcal{O}_F)$. This is a generalization of [3, Theorem 16.15].

• Journal of the Chungcheong Mathematical Society
• /
• v.13 no.1
• /
• pp.139-144
• /
• 2000

The generalized noncommutative torus $T_{\rho}^d$ of rank m was defined in [2]. Assume that for the completely irrational noncommutative subtorus $A_{\rho}$ of rank m of $T_{\rho}^d$ there is no integer q > 1 such that $tr(K_0(A_{\rho}))=\frac{1}{q}{\cdot}tr(K_0(A_{\rho^{\prime}}))$ for $A_{\rho^{\prime}}$ a completely irrational noncommutative torus of rank m. All $C^*$-algebras ${\Gamma}({\eta})$ of sections of locally trivial $C^*$-algebra bundles ${\eta}$ over $M=\prod_{i=1}^{e}S^{2k_i}{\times}\prod_{i=1}^{s}S^{2n_i+1}$, $\prod_{i=1}^{s}\mathbb{PR}_{2n_i}$, or $\prod_{i=1}^{s}L_{k_i}(n_i)$ with fibres $T_{\rho}^d{\otimes}M_c(\mathbb{C})$ were constructed in [6, 7, 8]. We prove that ${\Gamma}({\eta}){\otimes}M_{p^{\infty}}$ is isomorphic to $C(M){\otimes}A_{\rho}{\otimes}M_{cd}(\mathbb{C}){\otimes}M_{p^{\infty}}$ if and only if the set of prime factors of cd is a subset of the set of prime factors of p, that $\mathcal{O}_{2u}{\otimes}{\Gamma}({\eta})$ is isomorphic to $\mathcal{O}_{2u}{\otimes}C(M){\otimes}A_{\rho}{\otimes}M_{cd}(\mathbb{C})$ if and only if cd and 2u - 1 are relatively prime, and that $\mathcal{O}_{\infty}{\otimes}{\Gamma}({\eta})$ is not isomorphic to $\mathcal{O}_{\infty}{\otimes}C(M){\otimes}A_{\rho}{\otimes}M_{cd}(\mathbb{C})$ if cd > 1 when no non-trivial matrix algebra can be ${\Gamma}({\eta})$.

• Journal of Plant Biology
• /
• v.37 no.1
• /
• pp.37-42
• /
• 1994

Correlative changes between photosynthetic O2 exchange rates and room temperature Chl fluorescence were investigated in wheat (Triticum aestivum L.) chloroplasts treated with high temperature for 5 min. With increasing treatment temperature, photosynthetic O2 evolution rate mediated by PSII was decreased, showing 50% inhibition at 38$^{\circ}C$ (I50). But PSI activity measured by O2 uptake rates was stimulated as a function of increasing temperature. Dark level fluorescence (Fo)-temperature (T) analysis showed that fluorescence rising temperature (Tr), critical temperature (Tc), and peak temperature (Tp) was 38, 43, and 52$^{\circ}C$, respectively. Quenching analysis of Chl fluorescence showed that both the oxidized fraction of plastoquinone (qQ) and degree of thylakoid membrane energization (qNP) increased up to 4$0^{\circ}C$ and then declined dramatically. These results suggest that Tr is correlated with temperature showing a 50% of inhibition of photosynthesis and under mild high temperature stress, qNP is worth regarding as indicator for heat-induced damage of photosynthesis.

• Journal of the Korean Chemical Society
• /
• v.24 no.1
• /
• pp.15-19
• /
• 1980

CNDO/2, EHT molecular orbital methods are used to investigate the electronic structure and reactivity of glycinato, glycine ester ligands. The results show that bidentate glycinato has a more stable structure, Gly-I with a $105.9^{\circ}$dihedral angle between ${\Delta}O_4C_3C_2$ and ${\Delta}C_3C_2N_1$ than Gly-Ⅱ. The electron inductive effects in the alkyl group substituted glycine ester ligands can also be derived from the calculation. According to the electron density, qN of ligands on the basis of CNDO/2 MO calculations, it is concluded that the stabilities are in the order of glycinato > Gly-Et-ester > Gly-i-Pr-ester > Gly-Me-ester.

• Corrosion Science and Technology
• /
• v.3 no.4
• /
• pp.131-139
• /
• 2004

Effects of PbO on the repassivation kinetics and characteristics of passive film of Alloy 690 were examined to elucidate the influences of PbO on the SCC resistance of that alloy. The repassivation kinetics of the alloy was analyzed in terms of the current density flowing from the scratch, i(t), as a function of the charge density that has flowed from the scratch, q(t). Repassivation on the scratched surface of the alloy occurred in two kinetically different processes; passive film initially nucleated and grew according to the place exchange model in which log i(t) is linearly proportional to q(t), and then grew according to the high field ion conduction model in which log i(t) is linearly proportional to 1/q(t) with a slope of cBV. The cBV is found to be a parameter representing repassivation rate and hence SCC susceptibility of the alloy. The lower the value of cBV, the faster the repassivation rate and the higher the SCC resistance of an alloy. Addition of PbO to pH 4 and 10 solutions increased the value of cBV of alloy 690, reflecting slower repassivation rate than without PbO. The change in the value of cBV was grater in pH 10 than in pH 4. The increase in SCC susceptibility of alloy 690 with the addition of PbO to solution was presumably due to the Cr-depletion in the outer parts of passive film of the alloy with an incorporation of Pb compounds in the film, which was revealed by Mott-Schottky, AES and XPS analyses.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.325-325
• /
• 2007

The perovskites in the $LaAlO_3-BaZrO_3$ system (i.e., $(1-x)LaAlO_3-xBaZrO_3$ were fabricated by a solid state reaction and their dielectric properties were investigated. For the compositions of x=0.1~0.9, the mixture of $LaAlO_3$ with a rhombohedral structure and $BaZrO_3$ with a cubic was observed when the sintering was conducted at $1500^{\circ}C$, indicating that the solubility of constituent elements was very low and a narrow solid solution region might exist. The large difference of ionic radii between $La^{3+}$ ion (0.136nm, C.N.=12) and $Ba^{2+}$ ion (0.161nm) or $Al^{3+}$ ion (0.0535nm, C.N.=6) and $Zr^{4+}$ ion (0.072nm) might hinder the mutual substitution. Within the compositions of x=0~0.7, the dielectric constant of the mixture increased with the amount of $BaZrO_3$, i.e., x value, which was in good agreement with the logarithmic mixing rule (In $_{r,i}={\Sigma}v_iln\;_{r,i}$). The increase in $BaZrO_3$ doping decreased $Q{\times}f$ value significantly due to the low $Q{\times}f$ value of $BaZrO_3$ itself, a poor microstructure of the mixture with an increased grain boundary area per volume, and defects in the cation and oxygen sub-lattices which were respectively caused by the evaporation of barium during the sintering process and the substitution of Ba on La-site or Al on Zr-site.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.7
• /
• pp.604-610
• /
• 2003

The effects of sintering additives such as B $i_2$ $O_3$ and $V_2$ $O_{5}$ on the microwave dielectric and sintering properties of (Z $n_1$$_{-xM}$ $g_{x}$)Ti $O_3$ system were investigated. Highly dense samples were obtained for (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ at the sintering temperature range of 870~90$0^{\circ}C$ with B $i_2$ $O_3$ and $V_2$ $O_{5}$ additions of 〈1 wt.%, respectively. The microwave dielectric properties of (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ with 0.45 wt.%B $i_2$ $O_3$ and 0.55 wt.% $V_2$ $O_{5}$ sintered at 90$0^{\circ}C$ were as follows : Q$\times$ $f_{o}$ = 50,800 GHz, $\varepsilon$$_{r}$ = 22, and $\tau$$_{f}$ = -53 ppm/$^{\circ}C$. In order to improve temperature coefficient of resonant frequency, Ti $O_2$ was added to the above system. The optimum amount of Ti $O_2$ was 15 moi.% when sintered at 87$0^{\circ}C$, at which we could obtain following results: Q$\times$ $f_{o}$ = 32,800 GHz, $\varepsilon$$_{r}$ = 26, and$\tau$$_{f}$ = 0 ppm/$^{\circ}C$.EX>.EX>.EX>.EX>.EX>.EX>.EX>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.563-566
• /
• 2000

The effect of CuO and CuO-B $i_2$ $O_3$ additives on microwave dielectric properties of (P $b_{0.45}$C $a_{0.55}$)[F $e_{0.5}$N $b_{0.5}$)$_{0.9}$S $n_{0.1}$] $O_3$were investigated to decrease the sintering temperature for usage of Low Temperature Co-firing Ceramics (LTCC). The (P $b_{0.45}$C $a_{0.55}$)[F $e_{0.5}$N $b_{0.5}$)$_{0.9}$S $n_{0.1}$] $O_3$ceramics was sintered at 11$65^{\circ}C$. In order to decrease the sintering temperature, CuO and Cuo-B $i_2$ $O_3$ were added in the (Pb,Ca)[(Fe,Nb)Sn] $O_3$ with CuO-B $i_2$ $O_3$. For the addition of 0.4 wt.% CuO, the sintered density and the dielectric constant of the ceramics were revealed the maximum values of the 6.06g/c $m^2$ and 83 respectively and temperature coefficient of resonance frequency ($\tau$$_{f}$) shifted to the positive value. As increasing B $i_2$ $O_3$to the (Pb,Ca)[(Fe,Nb)Sn] $O_3$ with CuO-B $i_2$ $O_3$with 0.2 wt.% CuO, the sintered density, the $\varepsilon$$_{r}$ and the Q was decreased, and $\tau$$_{f}$ was minimized at 0.2 wt.% CuO, and 0.2 wt.% B $i_2$ $O_3$. For this composition, dielectric properties were $\varepsilon$$_{r}$ of 81, Q. $f_{0}$ of 4400 GHz, and $\tau$$_{f}$ of 5 ppm/$^{\circ}C$ at sintering temperature of 100$0^{\circ}C$. the relationship between the microstructure and properties of ceramics was studied by X-ray diffraction(XRD), scanning electron microscopy(SEM).copy(SEM).oscopy(SEM).copy(SEM).EM).

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.25 no.11
• /
• pp.1329-1334
• /
• 1988

A new method was developed for growing oxidation film by thermal reaction of $NH_3$ and $O_2$. The growth rate increased with the increase of partial pressure of $NH_3$. Optical transparency of the growth film was 12% at the wave number 1100 $cm^{-1}$ compared with 17% by thermal dry oxidation method, and the quality was much better. In C-V characteristic curve, $Q_{OX}$ was almost equal to $Q_{SS}$ and no hysteresis phenomena was observed. n-MOS transistors fabricated with this new method showed $I_D$-$V_{DS}$ characteristics better than thermal dry oxidation method.