• Applied Chemistry for Engineering
• /
• v.7 no.5
• /
• pp.861-868
• /
• 1996

Skeletal isomerization reaction known as exothermic reaction shows possible maximum yield of i-butene from n-butene at $110^{\circ}C$ over $Pt/MoO_3/SiO_2$. Compared with conventional catalyst such as silica, zeolite, alumina etc., $Pt/MoO_3/SiO_2$ demonstrates higher yield while by-products except 2-butene do not form. Faster H spillover rate over $Pt/MoO_3/SiO_2$ is demonstrated via isothermal reduction experiment at $110^{\circ}C$ compared to the rate over $Pt/MoO_3/Al_2O_3$. Overall isomerization rates are proportional to higher spillover rates from Pt onto $MoO_3$ surface. The skeletal isomerization reaction is composed of two elementary steps. First, carbonium ion formation over Pt crystallites by H spillover. Second, carbenium ion formation over $MoO_3$ followed by formation of i-butene. Moreover, it is suggested that H spillover step from Pt surface onto $MoO_3$ is assumed to be the rate determining step and control the overall isomerization rate.

• Applied Chemistry for Engineering
• /
• v.10 no.8
• /
• pp.1109-1113
• /
• 1999

sothemal reduction at $50^{\circ}C$ using $Pt/MoO_3$ or $Pt/MoO_3/SiO_2$ made by dry impregnation or physical mixture of $Pt^{\circ}$ and $MoO_3$ demonstrated that the $H_2$ uptake vis $H_2$ spillover from Pt into $MoO_3$ was enhanced as calcination temperature was increased. Surface area of exposed Pt crystallites measured by CO chemisorption was decreased with higher calcination temperature. In addition, TEM showed that $MoO_x$ overlayers were formed on Pt crystallites after calcination at $400^{\circ}C$. Consequentially, it was found that this increased active contact sites between Pt and $MoO_3$ due to surface morphological change was one of the dominant factors for this increased $H_2$uptake via $H_2$ spillover from Pt crystallites into $MoO_3$.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.5 no.1
• /
• pp.34-37
• /
• 2004

Effect of $H_2$ spillover rate as functon of calcination temperature on reaction kinetics was evaluated. Reaction kinetics including yield, conversion and selectivity of 1-butene isomerization over $Pt/HxMoO_3/SiO_2$ were measured as reaction temperature was increased. While conversion of 1-butane was decreased, yield of iso-butene was increased. Two kinds of reaction mechanism were proposed from the change of selectivity as function of temperature.

• Applied Chemistry for Engineering
• /
• v.8 no.2
• /
• pp.191-196
• /
• 1997

The isothermal reduction on $Pt/MoO_3/SiO_2$ at $50^{\circ}C$ demonstrates that the rate of hydrogen spillover is increased as calciantion temperature increases. That is due to the overlayer formation over the surface of Pt crystallites, investigated by TEM and CO chemisorption. It is known that reaction mechanism of skeletal isomerization of 1-butene into iso-butene is composed of 2 step such as formation of carbonium ion and isomerization of methyl group. It is expected that the increase of i-butene yield after calcination at $250^{\circ}C$ is due to increased rate of hydrogen spillover coming from first, overlayer formation over Pt surface and second, chlorine lessoning from $PtCl_x$ precursor.

• Proceedings of the KAIS Fall Conference
• /
• 2004.11a
• /
• pp.277-279
• /
• 2004

$300^{\circ}C$ 소성 Pt/MoO3가 수소를 흡착후 탈착하는 속도를 측정하였다. 두가지 흡착 속도를 나타내는 Pt/MoO3 촉매에서 탈착량은 흡착량과 탈착 온도의 증가에 비례하는 것을 알 수 있었다. 또한 X-Ray Photoelectron Spectroscope(XPS) 결과로부터 Pt와 MoO3간의 활성점에 존재하는 Cl의 존재가 수소 이동 속도를 결정하는 것으로 판단되었다.

• Proceedings of the KAIS Fall Conference
• /
• 2004.11a
• /
• pp.280-283
• /
• 2004

Effect of H2 spillover rate as function of reduction temperature on reaction kinetics was evaluated. Reaction kinetics including yield, conversion, activation energy and selectivity of 1-butene isomerization over Pt/HxMoO/SiO were measured as reaction temperature was increased. While conversion of 1-butane was decreased, yield of iso-butene was increased. Two kinds of reaction mechanism were proposed from the change of selectivity as function of temperature.

• Journal of Electrochemical Science and Technology
• /
• v.11 no.3
• /
• pp.273-281
• /
• 2020

Constructing and making highly active and stable nanostructured Pt-based catalysts with ultralow Pt loading are still electrifying for electrochemical applications such as water electrolysis and fuel cells. In this study, MoO₃ ribbons (RBs) of few micrometer in length is successfully synthesized via hydrothermal synthesis. Subsequently, 3-dimentional (3D)-silicate layer for about 10 to 15 nm is introduced via chemical deposition onto the pre-formed MoO₃ RBs; to setup the platform for Pt metaldots (MDs) deposition. In comparison with the bare MoO₃ RBs, the MoO₃-Si has served as a efficient solid-support for stabilizing and accommodating the uniform deposition of sub-2 nm Pt MDs. Such a structural design would effectively assist in improving the electronic conductivity of a fabricated MoO₃-Si-Pt catalyst towards MOR; the interfaced, porous and 3D silicate layer has assisted in an efficient mass transport and quenching the poisonous CO_ads species leading to a significant electrocatalytic performance for MOR in alkaline medium. Uniformly decorated, sub-2 nm sized Pt MDs has synergistically oxidized the MeOH in association with the MoO₃-Si solid-support hence, synergistic catalytic activity has been achieved. Present facile approach can be extended for fabricating variety of highly efficient Metal Oxide-Metal Nanocomposite for energy harvesting applications.

• Korean Journal of Materials Research
• /
• v.10 no.10
• /
• pp.684-690
• /
• 2000

In order to study effects of interfacial layers between $Pb(Zr,Til)Q_3(PZT)$ films and electrodes for Metal-Ferroelectric-MetaI(MFM) structure capacitors, we have fabricated the capacitors with the Pt/PZT/interfacial-layer/Pt/$TiO_2/SiO_2$/Si structure. $PbTiO_3(PT)$ interfacial layers were formed by sol-gel deposition and PbO, ZrO, and $TiO_2$ thin layers were deposited by reactive sputtering. $TiO_2$ interface layers result in the finest grains of PZT(crystalline Temp. $600^{\circ}C$) films compare to $PbO_2\;and\;ZrO_2$ layers. However, as the thickness of $TiO_2$ layer increases. PZT thin films become rough and electrical characteristics were deteriorated due to remained anatase phase. On the other hand. PT interface layers result in improved morphology of PZT films and do not significantly change ferroelectric properties. It is a also observed that seed layers at the middle and top of PZT films do not give significant effects on grain size but the PT seed layer at the interface between the bottom electrode and the PZT films results in the small grain size.

• Journal of the Microelectronics and Packaging Society
• /
• v.12 no.1 s.34
• /
• pp.21-26
• /
• 2005

The field effect transistors (FETs) were fabricated ell $Y_2O_3/Si(100)$ substrates by the conventional memory processes and sol-gel process using $(Bi,La)Ti_3O_{12}(BLT)$ ferroelectric gate materials. The remnant polarization ($2Pr = Pr^+-Pr^-$) int Pt/BLT/Pt/Si capacitors increased from $22 {\mu}C/cm^2$ to $30{\mu}C/ cm^2$ at 5V as the annealing temperature increased from $700^{\circ}C$ to $750^{\circ}C$. There was no drastic degradation in the polarization values after applying the retention read pulse for $10^{5.5}$ seconds. The capacitance-voltage data of $Pt/BLT/Y_2O_3/Si$ capacitors at 5V input voltage showed that the memory window voltage decreased from 1.4V to 0.6V as the annealing temperature increased from $700^{\circ}C$ to $750^{\circ}C$. The leakage current of the $Pt/BLT/Y_2O_3/Si$ capacitors annealed at $750^{\circ}C$ was about $510^{-8}A/cm^2$ at 5V. From the drain currents versus gate voltages ($V_G$) for $Pt/BLT/Y_2O_3/Si(100)$ FET devices, the memory window voltages increased from 0.3V to 0.8V with increasing tile $V_G$ from 3V to 5V.

• Korean Journal of Materials Research
• /
• v.4 no.6
• /
• pp.669-680
• /
• 1994

Oxidation behaviour of TiAl intermetallic compounds with the addition of Cr, V, Si, Mo, or Nb was investigated at 900~$1100^{\circ}C$ under the atmospheric environment. The reaction products were examined by XRD, SEM equipped with WDX. The weight gain by continuous oxidation increased with the addition of Cr or V, but there was less weight gain when Mo, Si or Nb was added individually. he oxidation rate of Cr- or V-added TiAl was always larger than that of TiAI. However, oxidation rate of Si-, Mo- or Nb-added TiAl was almost same or smaller than that of TiAI. Thus, it is concluded that the addition of Cr or V did not improve the oxidation resistance, whereas the addition of Si, Mo or Nb improved the oxidation resistance. Oxides formed on TiAl with Mo, Si, and Nb were found to be more protective, resulting from the decrease in diffusion rate of the alloying elements and oxygen. Nb strengthened the tendency to form $AI_{2}O_{3}$ in the early stage of oxidation, due to the continuous $AI_{2}O_{3}$ layer formation and dense $Tio_{2}+AI_{2}O_{3}$ layer. According to the Pt-marker test of TiAI- 5wt%Nb, oxygen diffused mainly inward while oxides were formed on the substrate surface. Upon thermal cyclic oxidation at $900^{\circ}C$, it is shown that the addition of Cr or Nb improved the adherence of oxide scale to the substrate.