• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.742-749
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• 2002

The PZT thin films werre deposited on Pt/Ti/$SiO_2$/Si substrate by R. F. magnetron sputtering with $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ target. When interlayers(PbO, $TiO_2$, PbO/$TiO_2$) were inserted between PZT and Pt, the crystallization of the PZT thin films was considerably improved and the processing temperature was lowered. Compared to the pure PZT thin films, dielectric constant, dielectric loss and polarization properties of PZT thin films with interlayers were considerably improved. From XPS depth profile analysis, it was confirmed that PZT thin films and interlayers existed independently. In particular, PZT thin films deposited on interlayer(PbO/$TiO_2$) showed the best dielectric property (${\varepsilon}_r$=414.94, tan${\delta}$=0.0241, Pr=22${\mu}C/cm^2$).

• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.446-452
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• 2007

[ $(Pb_{1.1},La_{0.08})(Zr_{0.65}.Ti_{0.35})O_3$ ] thin films on the $Pt/Ti/SiO_2/Si$, $TiO_2(interlayer)/Pt/Ti/SiO_2/Si$ substrate were fabricated by the R.F. magnetron-sputtering method and considered their characteristics depending on $TiO_2$ interlayer. Changing the deposition conditions of $TiO_2$ interlayer, we obtained $TiO_2$ anatase single phase and rutile single phase. PLZT was deposited on these substrates and analyzed by x-ray diffraction(XRD) for there crystallinity and orientation. To investigate $PLZT-TiO_2$, $TiO_2-Pt$ interface, glow discharge spectrometer(GDS) analysis was carried out and we performed electrical measurements for dielectric properties of PLZT thin films. The PLZT thin film on $TiO_2$ anatase interlayer was found to have (110)-preferred orientation and 12.6 ${\mu}C/cm^2$ remaining polarization value.

• Journal of the Korean Ceramic Society
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• v.23 no.6
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• pp.33-36
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• 1986

The $PbTiO_3$is well known materials having remarkable ferroelectric piezoelectric and pyro-electric properties. Thin films of the lead titanite has been successfully fabricated by Chemical Vapor Deposition on the borosilicate glass and titanium substrate. The $PbTiO_3$ thin film deposited on the borosilicate glass using the $PbCl_2$, $TiCl_4$ dry oxygen and wet oxygen at different temperatures (50$0^{\circ}C$-$700^{\circ}C$) grows along the (001) preferred orientation. On the other hand the $PbTiO_3$ thin film deposited on the titanium substrate using the PbO grows along the (101) preferred orientation. Growth orientation of deposited $PbTiO_3$ depends on the reaction species irrespective of substrate materials. Maximum dielectic constant and loss tangent of the $PbTiO_3$ thin film deposited on the titanium substrate are about 90 and 0.02 respectively, . Deposition rates of $PbTiO_3$ deposited on the borosilicate glass and titanium substrate are 10-15 ${\mu}{\textrm}{m}$/hr. Titanium dioxide interlayer formed be-tween $PbTiO_3$ film and titanium substrate material, It improved the adhesion of the film.

• Proceedings of the KIEE Conference
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• 2008.05a
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• pp.169-170
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• 2008

The heterolayered PZT/PT thick films were fabricated by two different methods - thick films of the PZT by screen printing method on alumina substrates electrodes with Pt, thin films of $PbTiO_3$ by the spin coating method on the PZT thick films and once more thick films of the PZT by the screen printing method on the $BaTiO_3$ layer The structural and the dielectric properties were investigated for effect of various stacking sequence of sol-gel prepared $PbTiO_3$ coating solution at interface of the PZT thick films. The insertion of $PbTiO_3$ interlayer yielded the PZT thick films with homogeneous and dense grain structure with the number of $PbTiO_3$ layers. The leakage current density of the PZT/$PbTiO_3-1$ film is less that $4.41{\times}10^{-9}\;A/cm^2$ at 5 V.

• Proceedings of the Korean Ceranic Society Conference
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• 2004.04b
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• pp.36.4-36.4
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• 2004

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.594-597
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• 2003

In the present study, the piezoelectricity and polarization of multilayer ceramic actuator, being designed to stack PMN-PZ-PT ceramic layers and Ag-Pd electrode layers alternatively, were investigated under a consideration of geometric factor, the volume ratio of the ceramic to the electrode layers. The actuators were fabricated by tape casting of 0.2Pb(Mg1/3Nb2/3)O3-0.38PbZrO3-0.42PbTiO3 followed by lamination and burnout & co-firing processes. The actuators of 10 10 0.62 nm3 in size were formed in a way that 60 200 m thick ceramics were stacked alternatively with 5 m thick electrode layer. Increases in polarization and electric field-induced displacement with thickness of the ceramic layer were attributed to change of 90o/180o domain ratio, which was affected by interlayer internal stress. The piezoelectricity and actuation behaviors were found to depend upon the volume ratio (or thickness ratio) of ceramic to electrode layers.

• Journal of the Korean Ceramic Society
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• v.32 no.12
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• pp.1408-1416
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• 1995

Microstructure and ferroelectric properties of sol-gel derived PZT(52/48) and PT interlayered PZT(52/48) thin films on Pt/Ti/SiO2/Si substrates were investigated. Films were fabricated using Acetylacetone chelated PT and PZT(52/48) sols. PZT(52/48) thin films annealed at $700^{\circ}C$ for 20 min showed the rosette structure with the size of 1.2~1.6${\mu}{\textrm}{m}$ and the pyrochlore phse was contained. PT interlayered PZT thin films, which is inserted by PbTiO3 thin layer with the thickness of 130 $\AA$ between PZT thin film and electrode, consisted of a single perovskite phase after annealing above 55$0^{\circ}C$. They exhibited the uniform and columnar grains of 0.1~0.16${\mu}{\textrm}{m}$, which are applicable for microelectronic device including non-volatile memory. Typical P-E hysteresis loops could be obtained from PT interlayered PZT thin film at as low as the annealing temperature of 50$0^{\circ}C$. Ferroelectric properties of PT interlayered PZT thin films were improved as increasing annealing temperature up to $700^{\circ}C$, and then deteriorated at 75$0^{\circ}C$. PZT(52/48) and PT interlayered PZT(52/48) thin film annealed at $700^{\circ}C$ for 20 min displayed Ps=38.8$\mu$C/$\textrm{cm}^2$, Pr=10.0$\mu$C/$\textrm{cm}^2$, Ec=65.3 kV/cm and Ps=28.5$\mu$C/$\textrm{cm}^2$, Pr=9.8$\mu$C/$\textrm{cm}^2$, Ec=76.1 kV/cm, respectively.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.12a
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• pp.163-168
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• 2003

In the present study, the piezoelectricity and polarization of multilayer ceramic actuator, being designed to stack PMN-PZ-PT ceramic layers and Ag-Pd electrode layers alternatively, were investigated under a consideration of geometric factor, the volume ratio of the ceramic to the electrode layers. The actuators were fabricated by tape casting of $0.2Pb(Mg_{1/3}Nb_{2/3)O_3-0.38PbZrO_3-0,42PbTiO_3$ followed by lamination and burnout & co-firing processes. The actuators of $10\times10\times0.6~2\textrm{mm}^3$ in size were formed in a way that $60 ~ 200\mu\textrm{m}$ thick were stacked alternatively with $5\mu\textrm{m}$ thick electrode layer. Increases in polarization and electric field-induced displacement with thickness of the ceramic layer were attributed to change of $90^{\circ}$/$180^{\circ}$ domain ratio, which was affected by interlayer internal stress. The piezoelectricity and actuation behaviors were found to depend upon the volume ratio (or thickness ratio) of ceramic to electrode layers.

• Korean Journal of Materials Research
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• v.1 no.2
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• pp.105-112
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• 1991

In PLZT system, a new type of material for piezoelectric actuator was developed and its properties were investigated. This material consists of three layers : a piezoelectric ceramic layer, an interlayer which composition changes gradually, and another piezoelectric layer. This kind of materials is called functionally Gradient Materials(FGM). The composition of these layers were selected from the $(Pb,\;La)(Zr,\;TiO_3$ system through the concept of materials design. Sintered FGM at $1300^{\circ}C$, 2hr has an interlayer of about $20\mu\textrm{m}$ with no distorted damage. Dielectric and piezoelectic properties of FGM show intervalues of each side composition. The strain-voltage characteristics in FGM system was improved comparison with any single composition. Especially, the FGMs were fabricated which has high piezoelectric-low dielectric composition and low piezoelectric-high dielectric composition. The properties of both FGMs were significantly improved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.615-618
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• 2004

The piezoelectricity and polarization of multilayer ceramic actuators, being designed to stack ceramic layer and electrode layer alternately, were investigated under a consideration of geometry, the thickness ratio of the ceramic layer to electrode layer The actuators were fabricated by tape-casting of $0.42PbTiO_3-0.38PbZrO_3-0.2Pb(Mn_{1/3}Nb_{2/3})O_3$ followed by laminating, burn-out and co-firing process. The actuators of $5\times5mm^2$ in area were formed in a way that $60{\sim}200{\mu}m$ thick ceramics were stacked 10 times alternately with $5{\mu}m$ thick electrode. Increase in polarization and electric field-displacement with increasing thickness ratio of the ceramic/electrode layer and thickness/cross section ratio were attributed to the change of $non-180^{\circ}/180^{\circ}$ domain ratio which was affected by the interlayer internal stress and Poisson ratio of ceramic layer. The piezoelectricity and actuation behaviors were found to be dependent upon the volume ratio (or thickness ratio) of ceramic layer relative to ceramic layer. Concerning with the existence of internal stress, the field-induced polarization and deformation were described in the multilayer actuator.