• 한국세라믹학회지
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• 제51권6호
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• pp.523-526
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• 2014

PZT($Pb(Zr_{0.53}Ti_{0.47})O_3$)/PVDF(poly vinylidene fluoride) nanofibers were prepared based on DMF (dimethylformamide) and acetone solvent by electrospinning. The optimum concentration of a PZT and PVDF composite solution for the formation of nanofibers was found by SEM (scanning electron microscopy) observations. XRD (X-ray diffraction) measurements indicated that the characteristics of PZT and PVDF coexisted. The effects of the PZT concentration on the tensile strength were investigated.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 G
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• pp.3304-3306
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• 1999

In this study, we used the sputtering method with single target to obtain the thick and uniform PZT($PbZrTiO_3$) films for micromached IR sensor application. Then, we investigated the etching characteristics and conditions which is necessary process to fabricate the IR sensor. We tested the C-axis orientation and P-E loop of the deposited PZT films with the XRD and RT66A, respectively. Also we investigated the surface of the films by the AFM and SEM analysis.

• 센서학회지
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• 제22권6호
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• pp.400-403
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• 2013

The piezoelectric composite film of ferroelectric PZT ceramic ($PbZr_xTi_{1-x}O_3$) and polymer (PDMS, Polydimethylsiloxane) was prepared to improve the flexibility of piezoelectric material. The bar coating method was applied to fabricate flexible nanocomposite film with large surface area by low cost process. In the case of using metal electrode on the composite film, although there is no problem by bending process, the electrode is usually broken away from the film by stretching process. However, the well-attached, flexible CNT electrode on PZT/PDMS film improved flexibility, especially stretchability. PZT particles was usually settled down into polymer matrix due to gravity of the weighty particle, so to improve the dispersion of PZT powder in polymer matrix, small amount of additives (CNT powder, Carbon nanotube powder) was physically mixed with the matrix. By stretching the film, an output voltage of PZT(70 wt%)/PDMS with CNT (0.5 wt%) was measured.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.885-888
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• 2000

The effects of deposition temperature and post annealing process of ferroelectric PbZr$\sub$0.52/Ti$\sub$0.48/O$_3$(PZT) thin films by pulsed laser deposition (PLD) were investigated. The PZT thin films were deposited at 400, 450, 500, and 550$^{\circ}C$, with/without post annealing at 650$^{\circ}C$ for 30 min. The PZT thin films deposited above 500$^{\circ}C$ without post annealing were crystallized into peroveskite phase, but the PZT thin films deposited below 450$^{\circ}C$ had pyrochlore phase. The PZT thin films deposited below 450$^{\circ}C$ with post annealing also crystallized into pure perovskite. Compared to the PZT thin films which were deposited at 450$^{\circ}C$ and post annealed, the films deposited at 550$^{\circ}C$ have a columnar microstructure and high remnant polarization 28 (${\mu}$C/cm$^2$). With in-situ annealing at oxygen ambient, the PZT thin films reduced oxygen vacancies and increased retained polarization.

• 한국전기전자재료학회논문지
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• 제32권2호
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• pp.110-115
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• 2019

$Pb(Sb_{0.5}Nb_{0.5})_x(Zr_{0.51}Ti_{0.49})_{1-x}O_3$ (abbreviation: PSN-PZT) ceramics were synthesized, using conventional bulk ceramic processing technology, with various PSN doping contents. The maximum density of PSN-PZT was 97% of the theoretical density in the samples sintered at $1,250^{\circ}C$. The maximum values of the piezoelectric properties achieved using the conventional processes were: $k_p$ of 0.625, $d_{33}$ of 531 pC/N, and $g_{33}$ of $33mV{\cdot}m/N$. Finally, we fabricated a piezo-speaker with the optimized PSN-PZT ceramics. The SPL of the speaker was measured at a distance of 1 m, with a driving voltage of $40V_{rms}$ in the frequency range of ~300 Hz to 9 kHz. The measured $SPL_{max}$ was at a very high level (95 dB), which was superior in quality in comparison with those of other commercial products.

• Composites Research
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• 제27권4호
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• pp.146-151
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• 2014

본 연구에서는 분극 전계에 따른 압전 페인트 센서의 특성을 확인하기 위해 충격힘과 분극 전계를 변화시켜 가면서 실험적인 연구를 수행하였다. 페인트 센서 제작을 위해 유연 압전 재료인 $Pb(Ni_{1/3}Nb_{2/3})O_3-Pb(Zr, Ti)O_2$ (PNN-PZT) 파우더와 경화제를 포함하고 있는 에폭시 수지를 중량비 1:1로 혼합 후 몰드를 사용하여 $40{\times}10{\times}1mm^3$ 크기를 같는 시편을 제작 하였다. 이후 시편의 기공을 제거하기 위해 진공 데시케이터를 사용하였다. 분극 작업을 위해 시편의 전극은 실버페이스트를 윗면과 아랫면에 바르고 하루 동안 건조시켜 제작하였다. 분극 작업은 온도는 상온으로, 분극 시간은 30분으로 고정하고 분극 전계를 달리하여 진행되었다. 1 mm의 두께를 갖는 앞전 페인트센서를 제작하여 실험에 사용하였으며, 감도 측정 및 감도 변화는 충격 망치를 사용하여 시편에 충격을 가했을 때 압전 페인트에서 출력되는 전압과 충격 망치에서 출력되는 전압을 측정 후 신호처리 하여 비교하였다. 그 결과 압전 페인트의 민감도에 분극 전계가 미치는 영향에 대해 평가 하였고 그 결과를 기술하였다.

• 자원환경지질
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• 제56권3호
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• pp.259-275
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• 2023

Pan African granitoids of Kaiama is comprised of K-feldspar rich granites, porphyritic granites, and granitic gneiss that are intruded by quartz veins and aplitic veins and dykes which trend NE-SW. In order to establish the geochemical signatures, petrogenesis, and tectonic settings of the lithological units, petrological, petrographical, and geochemical studies was carried out. Petrographic analysis reveals that the granitoids are dominantly composed of quartz, plagioclase feldspar, biotite, and k-feldspar with occasional muscovites, sericite, and opaque minerals that constitute very low proportion. Major, trace, and rare earth elements geochemical data reveal that the rocks have moderate to high silica (SiO₂=63-79.7%) and alumina (Al₂O₃=11.85-16.15) contents that correlate with the abundance of quartz, feldspars, and biotite. The rocks are calc-alkaline, peraluminous (ASI=1.0-<1.2), and S-type granitoids sourced by melting of pre-existing metasedimentary or sedimentary rocks containing Al, Na, and K oxides. They plot dominantly in the WPG and VAG fields suggesting emplacement in a post-collisional tectonic setting. On a multi-element variation diagram, the granitoids show depletion in Ba, K, P, Rb, and Ti while enrichment was observed for Th, U, Nd, Pb and Sm. Their rare-earth elements pattern is characterized by moderate fractionation ((La/Yb)_N=0.52-38.24) and pronounced negative Eu-anomaly (Eu/Eu^*=0.02-1.22) that points to the preservation of plagioclase from the source magma. Generally, the geochemical features of the granitoids show that they were derived by the partial melting of crustal rocks with some input from greywacke and pelitic materials in a typical post-collisional tectonic setting.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1553-1555
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• 1999

Recently, $SrBi_2Ta_2O_9$(SBT) and $Pb(ZrTi)O_3$(PZT) were much attracted as materials of capacitor for ferroelectric random access memory(FRAM) showing higher read/write speed, lower power consumption and nonvolartility. Bi-layered SBT thin film has appeared as the most prominent fatigue free and low operation voltage for use in nonvolatile memory. To highly integrate FRAM, SBT thin film should be etched. A lot of papers on SBT thin film and its characteristics have been studied. However, there are few reports about SBT thin film due to difficulty of etching. In order to investigate properties of etching of SBT thin film, SBT thin film was etched in $CF_4$/Ar gas plasma using magnetically enhanced inductively coupled plasma (MEICP) system. When $CF_4/(CF_4+Ar)$ is 0.1, etch rate of SBT thin film was $3300{\AA}/min$, and etch rate of Pt was $2495{\AA}/min$. Selectivities of SBT to Pt. $SiO_2$ and photoresist(PR) were 1.35, 0.6 and 0.89, respectively. With increasing $CF_4$ gas, etch rate of SBT thin film and $P_t$ decreased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.965-968
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• 2004

Effective transverse Piezoelectric Coefficients $(e_{31,f})$ of thick PZT $(Pb(Zr_{0.52}Ti{0.48}Ti_{0.48})O_3)$ films on $SiN_x/Si$ substrates were measured with PZT thicknesses and top electrode dimensions. $e_{31,f}$ is one of important Parameters characterizing Piezoelectricity of PZT films. Thick PZT films have been used as various sensors and actuators because of their high driving force and high breakdown voltage. Thick PZT films were fabricated on Pt/Ta/$SiN_x$/Si substrates using sol-gel method. Thicknesses of PZT films were $1{\mu}m$ and $1.8{\mu}m$. $|e_{31,f}|$ values of $1.8{\mu}m$-thick-PZT films were higher than those of $1{\mu}$-thick-PZT films. Maximum $|e_{31,f}|$ of $1.8{\mu}$-thick-PZT films was about $50^{\circ}C/m^2$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.463-463
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• 2014

Dye-sensitized solar cells (DSSCs) have generated a strong interest in the development of solid-state devices owing to their low cost and simple preparation procedures. Effort has been devoted to the study of electrolytes that allow light-to-electrical power conversion for DSSC applications. Several attempts have been made to substitute the liquid electrolyte in the original solar cells by using (2,2',7,7'-tetrakis (N,N-di-p-methoxyphenylamine)-9-9'-spirobi-fluorene (spiro-OMeTAD) that act as hole conductor [1]. Although efficiencies above 3% have been reached by several groups, here the major challenging is limited photoelectrode thickness ($2{\mu}m$), which is very low due to electron diffusion length (Ln) for spiro-OMeTAD ($4.4{\mu}m$) [2]. In principle, the $TiO_2$ layer can be thicker than had been thought previously. This has important implications for the design of high-efficiency solid-state DSSCs. In the present study, we have fabricated 3-D Transparent Conducting Oxide (TCO) by growing tin-doped indium oxide (ITO) nanowire (NWs) arrays via a vapor transport method [3] and mesoporous $TiO_2$ nanoparticle (NP)-based photoelectrodes were prepared using doctor blade method. Finally optimized light-harvesting solid-state DSSCs is made using 3-D TCO where electron life time is controlled the recombination rate through fast charge collection and also ITO NWs length can be controlled in the range of over $2{\mu}m$ and has been characterized using field emission scanning electron microscopy (FE-SEM). Structural analyses by high-resolution transmission electron microscopy (HRTEM) and X-Ray diffraction (XRD) results reveal that the ITO NWs formed single crystal oriented [100] direction. Also to compare the charge collection properties of conventional NPs based solid-state DSSCs with ITO NWs based solid-state DSSCs, we have studied intensity modulated photovoltage spectroscopy (IMVS), intensity modulated photocurrent spectroscopy (IMPS) and transient open circuit voltages. As a result, above $4{\mu}m$ thick ITO NWs based photoelectrodes with Z907 dye shown the best performing device, exhibiting a short-circuit current density of 7.21 mA cm-2 under simulated solar emission of 100 mW cm-2 associated with an overall power conversion efficiency of 2.80 %. Finally, we achieved the efficiency of 7.5% by applying a CH3NH3PbI3 perovskite sensitizer.