• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.719-722
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• 2003

Ferroelectric $Pb(Zr_{1-x}Ti_x)O_3$ (PZT) films were deposited on (001) MgO single crystals using sol-gel method. Structural properties and surface morphologies of PZT films were investigated using an X-ray diffractometer and a scanning electron microscopy, respectively. The dielectric properties of PZT films were investigated with the dc bias field using interdigitated capacitors (IDC) which were fabricated on PZT films using a thick metal layer by photolithography and dry etching process. The small signal dielectric properties of PZT films were calculated by a modified conformal mapping method with low and high frequency data, such as capacitance measured by an impedance gain/phase analyzer at 100 kHz and reflection coefficient (S-parameter) measured by a HP 8510C vector network analyzer at 1 -20 GHz. The IDC on PZT films exhibited about 67% of capacitance change with an electric field of 135 kV/cm at 10 GHz. These PZT thin films can be applied to tunable microwave devices such as phase shifters, tunable resonators and tunable filters.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.152-156
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• 2017

In this paper, $Pb(Mn_{1/3}Nb_{2/3})_{0.07}(Ni_{1/3}Nb_{2/3})_{0.10}(Zr_{0.5}Ti_{0.5})_{0.83}O_3$ ceramics were fabricated by the conventional solid state method to obtain excellent dielectric properties for ultrasonic generators. The effects of 2nd calcination temperature on their microstructure and piezoelectric properties were systematically investigated. The tetragonality increased in the ceramics when 2nd calcination temperature increased to the optimized temperature at $750^{\circ}C$. At that temperature, excellent physical properties ($d_{33}=352\;pC/N$, ${\varepsilon}_r=1,687$, $k_p=0.570$, $Q_m=1,640$) were obtained for ultrasonic generator application.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.28-33
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• 2008

Lanthanum modified lead zirconate titanate ($Pb_{1.1}La_{0.08}Zr_{0.65}Ti_{0.35}O_3$) thin films were fabricated on indium doped tin oxide (ITO)-coated glass substrate by R.F magnetron sputtering method. The thin films were deposited at $500^{\circ}C$ and post-annealed with various temperature ($550-750^{\circ}C$) by rapid thermal annealing technique. The structure and morphology of the films were characterized with X-ray diffraction (XRD) and atomic force microscopy (AFM) respectively. The hysteresis loops and fatigue properties of thin films were measured by precision material analyzer. As the annealing temperature was increased, the remnant polarization value was increased from $10.6{\mu}C/cm^2$ to $31.4{\mu}C/cm^2$, and coercive field was reduced from 79.9 kV/cm to 60.9 kV/cm. As a result of polarization endurance analysis, the remnant polarization of PLZT thin films annealed at $700^{\circ}C$ was decreased 15% after $10^9$ switching cycles using 1MHz square wave form at ${\pm}5V$.

• Korean Journal of Materials Research
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• v.12 no.3
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• pp.211-214
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• 2002

Properties of 52/48 PZT films with various thicknesses for piezoelectric micro-electro mechanical systems (MEMS) devices fabricated by multi-coating method on $Pt(3500{\AA})/Ti(400{\AA})/SiO_2(3000{\AA})/Si$(525$\mu\textrm{m}$) substrates were investigated. PZT films were deposited by spin-coating process at 3500 rpm for 30 sec, followed by pyrolysis at 45$0^{\circ}C$ for 10 min producing the thickness of about 120nm. These processes were repeated 4, 8, 12, 16 and 20 times in order to have various thicknesses, respectively. Finally, they were crystallized at $650^{\circ}C$ for 30 min. All thick PZT films showed dense and homogeneous surface microstructures. Thick PZT films showed crystalline structures of random orientations with increasing thickness. Dielectric constants of thick PZT films were increased with increasing film thickness and reached 800 at 100kHz for 2.3$\mu\textrm{m}$ thick PZT film. $P_r\; and\; E_c$ of 2.3$\mu\textrm{m}$ thick PZT films were about 20$\mu$C/$\textrm{cm}^2$ and 63kV/cm. Depth profile analysis by Auger Electron Spectroscopy (AES) of 4800 $\AA$ thick PZT film showed the formation of the perovskite phase on Pt layer by Pb diffusion behavior. It was considered that Pb-Pt intermediate layer promoted PZT (111) columnar structures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.327-328
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• 2006

본 연구에서는 0-3 타입의 압전 세라믹 - 고분자 복합소재를 제조하기 위해서 $Pb(Zr_{0.54}Ti_{0.48})O_3$ + 0.2 wt% $Cr_2O_3$ + 1 wt% $Nb_2O_5$ 조성을 기본 조성으로 하여, 세라믹-고분자 첨가량에 따른 복합소재의 전기적 특성과 여러 분극조건, 즉 분극온도, 분극시간, 분극전압 변화에 의한 압전 특성을 고찰하였다. 세라믹 첨가비율이 증가함에 따라 유전상수와 압전상수($d_{33}$)는 증가하였으며, 전압상수($g_{33}$)는 급격히 감소하는 경향을 보였으며, 분극시간과 분극전압도 전기적 특성에 영향을 주는 것을 확인하였다. 분극전압 5KV 인가한 고분자 15% 첨가한 복합 소재에서 유전상수 13, 압전상수 $d_{33}$ 23(${\ast}10^{-12}C/N$), 전압상수 $g_{33}$ 170($10^{-3}v.m/N$)의 우수한 특성을 나타내었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.59-61
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• 2005

In this paper, in order to develop the low temperature sintering ceramics for multilayer piezoelectric transformer, $Pb[(Mn_{1/3},Nb_{2/3})_{0.07}(Zn_{1/3}Nb_{2/3})_a(Zr_{0.48}Ti_{0.52})_{1-0.07-a}O_3]$ ceramics were manufactured with the variations of PZN from 2 to 14mol% and their dielectric and piezoelectric properties were investigated. Sintering temperature was varied from 910 to $1000^{\circ}C$. At 8mol% PZN substituted specimen sintered at $970^{\circ}C$, electromechanical coupling factor(kp), mechanical quality factor(Qm), dielectric constant and peizoelectric constant($d_{33}$) showed the optimal values of 0.536, 1803, 1551 and 328[pC/N), respectively, for multilayer piezoelectric transformer application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.1
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• pp.20-25
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• 2001

To develop the piezoelectric actuator, the structural, dielectric and piezoelectric properties and electric fieldinduced strain of the ceramics(Pb$\_$1-2/Ba$\_$x/)[Mg$\_$1/2/W$\_$1/2/)$\_$0.03/-Ni$\_$1/3/Nb$\_$2/3/)$\_$0.12/-(Zr$\_$0.5/Ti$\_$0.5/)$\_$0.85/]O$_3$(x=0, 0.01, 0.03, 0.05, 0.07, 0.1) were investigated with the substitution of Ba. The tetragonality of crystal structure and grain size decreased by the substitution of Ba. Curie temperature decreased due to the decrease of the tetragonality, and dielectric constants increased with the substitution of Ba. The coercive field, remnant polarization and electromechanical coupling factor also decreased, whereas the piezoelectric constatns d$\_$33/ and d$\_$31/ were showed the highest value of 430 and 209(x10$\^$-12/C/N), respectively, because of the increase of dielectric constant. The strain induced by 60Hz AC electric field had the maximum value of 204x10$\^$-6/Δℓ/ℓ at the substitution of Ba 3mol%. As the applied electric field approaches to the coercive field, the piezoelectric element is depolarized and the electric field induced strain revealed non-linearity.

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.877-885
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• 1997

The dependence of strength, crack growth, fracture mode and degree of domain rearrangement of PZT ceramics on poling strength were studied. The PZT [(Pb0.94Sr0.06)(Zr0.46Ti0.54)O3+Nb(trace)] specimens were poled at 0, 0.5, 1.0, 1.5, 2.0, 2.5, 3.0 kv/mm, and the strength of the specimens was measured by 3 point flexure system. The bending strength of the specimen decreased in different modes according to the bending directions; xz, zx and yz plane direction with x axis of the poling direction in Cartesian coordinate system. The strength differences between the directions increased as the poling strength increased. The fracture mode transferred to intergranular fracture mode from transgranular one as the poling strength increased. The mechanical breakdown occurred when the poling strength higher than 3 kV/mm was applied to the specimen. It was observed that the crack length increased in the normal direction to the poling direction, however, decreased in the parallel direction to the poling direction when the poled PZT specimen was indented by the Vickers indenter. However, the crack produced by indentation continuously was continuously increased little by little after indentation on the specimen. The domain rearrangement occurred as the poling strength increased and the domains were rearranged more effectively when the electric field was continuously increased little by little.

• Korean Journal of Materials Research
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• v.30 no.7
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• pp.343-349
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• 2020

NKN [(Na,K)NbO₃] is a candidate lead-free piezoelectric material to replace PZT [Pb(Zr,Ti)O₃]. A single crystal has excellent piezoelectric-properties and its properties are dependent of the crystal orientation direction. However, it is hard to fabricate a single crystal with stoichiometrically stable composition due to volatilization of sodium during the growth process. To solve this problem, a solid solution composition is designed (Na,K)NbO₃-Ba(Cu,Nb)O₃ and solid state grain growth is studied for a sizable single crystal. Ceramic powders of (Na,K)NbO₃-M(Cu,Nb)O₃ (M = Ca, Sr, Ba) are synthesized and grain growth behavior is investigated for different temperatures and times. Average normal grain sizes of individual specimens, which are heat-treated at 1,125 ℃ for 10 h, are 6.9, 2.8, and 1.6 ㎛ for M = Ca, Sr, and Ba, respectively. Depending on M, the distortion of NKN structure can be altered. XRD results show that (NKN-CaCuN: shrunken orthorhombic; NKN-SrCuN: orthorhombic; NKN-BaCuN: cubic). For the sample heat-treated at 1,125 ℃ for 10 h, the maximum grain sizes of individual specimens are measured as 40, 5, and 4,000 ㎛ for M = Ca, Sr, and Ba, respectively. This abnormal grain size is related to the partial melting temperature (NKN-CaCuN: 960 ℃; NKN-SrCuN: 971 ℃; NKN-BaCuN: 945 ℃).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.118-118
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• 2009

Low temperature co-fired ceramic (LTCC) is one of promising materials for MEMS structures because it has very good electrical and mechanical properties as well as possibility of making various three dimensional (3D) structures. In this work, piezoelectric pressure sensors based on hybrid LTCC technology were presented. The LTCC diaphragms with thickness of 400 um were fabricated by laminating 12 green tapes which consist of alumina and glass particle in an organic binder. The piezoelectric sensing layer consists of $Pb(ZrTi)O_3$ (PZT) thin film deposited by RF magnetron sputtering method on between top and bottom Au electrodes. The results showed that the fabrication method is very suitable for pressure sensor applications. The PZT films deposited on LTCC diaphragms were successfully grown and were analyzed by using X-ray diffraction method (XRD) and field emission scanning electron microscope (FESEM).