• Proceedings of the Materials Research Society of Korea Conference
• /
• 1996.11a
• /
• pp.67-67
• /
• 1996

• Journal of the Korean Ceramic Society
• /
• v.28 no.5
• /
• pp.359-364
• /
• 1991

The effects of Pb5Ge3O11 on the sinterbility and lattice variation of the semiconducting 0.15 mol% Y2O3 doped BaTiO3 have been investigated as functions of additive contents (from 0.25 mol% to 2.5 mol%) and sintering temperatures (from 110$0^{\circ}C$ to 130$0^{\circ}C$). As the amount of Pb5Ge3O11 increases, the sinterbility of BaTiO3 increases abruptly at around 115$0^{\circ}C$. During the sintering, the most of Pb+2 ions in additives penetrate into BaTiO3 lattices and Ge+4 ions present at grain boundaries. Therefore the c lattice of the BaTiO3 increases largely and then the tetragonality increases due to the diffusion of the Pb+2 ions.

• Journal of the Korean Ceramic Society
• /
• v.29 no.9
• /
• pp.675-680
• /
• 1992

The purpose of this investigation was to study the stability of perovskite structure, the variation of electrical properties and a microstructure with varing amount of PbTiO3 additive in PZN-PT-BT system. The results are as follows: 1. The pyrochlore phase was reduced as the amount of PbTiO3 additive was increased and completely eliminated at 0.15PT in PZN-PT-BT system. 2. The aging rate was increased in proportion to tetragonality because the internal stress was increased in proportion to tetragonality. 3. On increasing the amount of PbTiO3 additive, the Curie temperature was increased in proportion to tetragonality. 4. As the amount of PT in the composition increase, the variation of dielectric constant was sharpened and the diffuseness of the transition decreased.

• Journal of the Korean Ceramic Society
• /
• v.37 no.1
• /
• pp.63-69
• /
• 2000

Electrically-induced strain(S) and polarization(P) for Pb(Sc1/2Nb1/2)O3-PbTiO3(1-x)PSN-xPT) crystalline solutions were studied. From the compositional dependence of S and P we could observe two maximum values at x=0.10 and x=0.425. It is considered that PSNT10(x=0.10) composition is the structural phase boundary to indicate the variable order-disorder[VOD] region. PSNT(x=0.425) composition is the morphotropic phase boundary[MPB] to indicate the rhombohedral to tetragonal phase transition. Higher S (0.437%) and P (0.3974$\mu$C/$\textrm{cm}^2$) values were attained by the La substitution (5 wt%) at Pb site in the MPB composition of 57.5PSN-42.5PT.

• Journal of the Korean Ceramic Society
• /
• v.24 no.6
• /
• pp.537-542
• /
• 1987

The microstructure and electrical properties of Pb[(Sb1/2 Nb1/2)0.08 Zr0.49 Ti0.48]O3 with MnO2 addition have been investigated in this work. The amount of MnO2 addition was 0, 0.4, 0.8, 1.2, 2.0 wt%, respectively. The soild solution range of MnO2 that assumed in this composition according to thevariations of micro-structure and electrical properties was 0.4-0.8 wt%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.10
• /
• pp.935-941
• /
• 2006

In this paper, the dielectric and piezoelectric properties of $0.4Pb(Ni_{1/3}Nb_{2/3})O_3+0.6Pb(Zr_{405}Ti_{595})O_3+X\;wt%\;Fe_2O_3$ ceramics were investigated with the addition of $Fe_2O_3$ and sintering temperature. Dielectric constant and piezoelectric constant increased with amount of $Fe_2O_3$ to 0.25 wt% and then decreased the further addition of $Fe_2O_3$. It seems that $Fe_2O_3$ acts as a sintering aid at the sintering temperature of $1150^{\circ}C$. By the addition of $Fe_2O_3$., sintering temperature of the system was lowered from $1250^{\circ}C\;to\;1100^{\circ}C$. The piezoelectric properties showed the maximum value of ${\varepsilon}r=4669,\;d_{33}=810(10^{-12}m/V)$, kp = 77 %, Qm = 55, in $0.4Pb(Ni_{1/3}Nb_{2/3})O_3\;-0.6Pb(Zr_{0.405}Ti_{0.595})O_3+0.25wt%\;Fe_2O_3$ ceramics having composition near the morphotropic phase boundary. The composition may be appropriate for actuator materials because of high piezoelectric constant and electromechanical coupling factor.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.2
• /
• pp.307-314
• /
• 1998

PZT thin films were fabricated by the Sol-gel method. Starting materials used for the preparation of the stock solution were Pb-acetate trihydrate, Zr-normal propoxide and Ti-isopropoxide. 2-Methoxyethanol and iso-propanol were used for solution. For studying the diffusion of Pb ion into the substrates. We used bare Si substrate, $SiO_2/Si$ substrates which was produced by thermal oxidation and $TiO_2/SiO_2/Si$ which was mad by Sol-gel method. Densification and adhesion of thin films were observed by SEM. Phase formation of thin films and diffusion of Pb ion into the substrate were examined by XRD and ESCA, respectively. In the case of bare Si and $SiO_2/Si$ substrate, we obtained the perovskite phase at $700^{\circ}C$ and restricted a little the diffusion of Si ion into the film with $SiO_2$ buffer layer. In the case of $TiO_2/SiO_2/Si$, perovskite phase were obtained at $500^{\circ}C$ and the diffusion of Pb ion and Si ion were restriced.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1996.06b
• /
• pp.185-217
• /
• 1996

Pb(Mg1/3Nb2/3)O3은 높은 유전율과 전기저항 및 유전율의 온도변화율이 적은 Pb계 relaxor의 대표적인 재료로서 적층 세라믹 콘덴서 재료에의 응용이 크게 기대되고 있다. 그러나 산화물 분말을 이용하는 일반적인 세라믹스 합성방법으로는 Pb(Mg1/3Nb2/3)O3의 단일상의 합성이 어렵고, 합성과정에서 저유전율상인 pyrochlore상이 합성이 어렵고, 합성과정에서 저유전율상인 pyrochlore상이 공존하여 Pb(Mg1/3Nb2/3)O3의 전기적 특성을 저하시킨다. 본연구에서는 용액을 이용하여 Pb(Mg1/3Nb2/3)O3의 단일상을 합성하고자 하였다. 출발물질로는 값싼 금속염인 Niobium Oxalate, magnesium Nitrate 및 Lead Nitrate를 선정하고 증류수에 용해하여 혼합용액을 제좋고, 합성방법으로는 초음파 분무 열분해법과 에멀젼법을 이용하였다. 초음파 분무 열분해법에서는 75$0^{\circ}C$에서 합성한 분말을 다시 75$0^{\circ}C$에서 하소하여 Pb(Mg1/3Nb2/3)O3 단일상을 합성할 수 있었으며, 에멀젼법에서는 80$0^{\circ}C$에서 Pb(Mg1/3Nb2/3)O3 단일상을 합성할 수 있었다.

• Journal of the Korean Vacuum Society
• /
• v.7 no.1
• /
• pp.17-23
• /
• 1998

$Pb(Fe_{0.5}Nb_{0.5}O_3(PFN)$ thin films were prepared by rf magnetron co-sputtering method on $SiO_2/Si$, ITO/glass, and $Pt/Ti/SiO_2/Si$ substrates and post-annealed at the $N_2$ atmosphere by RTA(rapid thermal annerling). The degree of crystallinity of PFN films was identified on various substrates. Electrical properties of PFN films was characterized for $Pt/PFN/Pt/Ti/SiO_2/Si$ structure. The composition of PFN films was estimated by EPMA (electron probe micro analysis). PFN films would be crystallized better to perovskite phase on ITO/glass substrate than $SiO_2/Si$ substrate. This may be induced by the deformation of Pb deficient pyrochlore phase due to Pb diffusion into $SiO_2/Si$ substrate. PFN films on $Pt/Ti/SiO_2/Si$ substrate. PFN films with 5-10% Pb excess were crystallized to perovskite phase from $500^{\circ}C$ temperature. In summary, we show that Pb composition and annealing temperature were critically influenced on crystallinity to perovskite phase. When PFN film with 17% Pb excess was annealed at $600^{\circ}C$ at the $N_2$ atmosphere for 300kV/cm and 88. Its remnant polarization coercive field $2.0 MC/cm^2$ and 144kV/cm, respectively.

• Journal of the Korean Vacuum Society
• /
• v.17 no.5
• /
• pp.442-447
• /
• 2008

Ferroelectric samples of the 0.65Pb$(Mg_{1/3}Ta_{2/3})O_3-0.35PbTiO_3$ modified with $Ag_2O$ were prepared by sintering at $1200^{\circ}C$ for 4 h. The fractured surface of sintered pellets were examined by scanning electron microscopy(SEM). The dielectric constant, loss, and pyroelectric coefficient of the ceramics samples were determined. The dielectric and pyroelectric properties could be improved with the addition of small amount of $Ag_2O$ up to 0.2 mol%. The dielectric and pyroelectirc peak temperatures are continuously shifted to lower temperature with addition of small amounts of $Ag_2O$.