• Particle and aerosol research
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• v.4 no.1
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• pp.21-25
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• 2008

$Pb(Zr_{0.53}Ti_{0.47})O_3$ (PZT) was synthesized by a multiple wet dry process. Precipitates prepared from reaction between $ZrOCl_2{\cdot}8H_2O$ and $TiOCl_2$ and $NH_4OH$ in an aqueous solution was dried at $100^{\circ}C$, and calcined at $500^{\circ}C$ and $700^{\circ}C$. The mixture mixed with PbO and as-dried or calcined $Zr_{0.53}Ti_{0.47}O_4$ (ZT) powders was calcined again at 700 and $800^{\circ}C$. Well crystallized ZT and PZT were formed at even $700^{\circ}C$. PZT piezoelectric ceramics of more than 98.5% in a relative density was obtained by sintering at as low as $900^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.742-749
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• 2002

The PZT thin films werre deposited on Pt/Ti/$SiO_2$/Si substrate by R. F. magnetron sputtering with $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ target. When interlayers(PbO, $TiO_2$, PbO/$TiO_2$) were inserted between PZT and Pt, the crystallization of the PZT thin films was considerably improved and the processing temperature was lowered. Compared to the pure PZT thin films, dielectric constant, dielectric loss and polarization properties of PZT thin films with interlayers were considerably improved. From XPS depth profile analysis, it was confirmed that PZT thin films and interlayers existed independently. In particular, PZT thin films deposited on interlayer(PbO/$TiO_2$) showed the best dielectric property (${\varepsilon}_r$=414.94, tan${\delta}$=0.0241, Pr=22${\mu}C/cm^2$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.37-40
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• 1998

In this paper, Pb(Z $r_{0.53}$ $Ti_{0.47}$) $O_3$+x[wt%]C $r_2$ $O_3$ ceramics were fabricated, and thermal aging effects on the specimen were investigated. After thermal aging, the temperature coefficients of their resonant frequence became stable and only the specimen with C $r_2$ $O_3$ additives in them could have lower temperature coefficientient

• 전기의세계
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• v.27 no.3
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• pp.43-46
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• 1978

The prezoelectric ceramic specimen compoxed of PbO, ZrO$_{2}$, TiO$_{2}$ were prepared in this Lab, and showed properties of dielectric constant .epsilon.$^{33}$ /.epsilon.$_{0}$ 487 at 1kHz, electromechanical coefficient Kr 0.524. As the characteristics of piezoelectric HF filter used these piezoelectric specimen were the resonant point 6.7 MHz, effective bandwidth 690KHz, it was exellant. Since a LC resonant filter can be replaced bt this piezoelectric HG filter, it will greatly contribute to compose a compact circuit. If the resont point can be controlled, this piezoelectric HF filter practically.

• Journal of the Korean Ceramic Society
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• v.42 no.2 s.273
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• pp.104-109
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• 2005

To study the role of PbO as the buffer layer, Pt/PZT/PbO/Si with the MFIS structure was deposited on the p-type (100) Si substrate by the r.f. magnetron sputtering with $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ and PbO targets. When PbO buffer layer was inserted between the PZT thin film and the Si substrate, the crystallization of the PZT thin films was considerably improved and the processing temperature was lowered. From the result of an X-ray Photoelectron Spectroscopy (XPS) depth profile result, we could confirm that the substrate temperature for the layer of PbO affects the chemical states of the interface between the PbO buffer layer and the Si substrate, which results in the inter-diffusion of Pb. The MFIS with the PbO buffer layer show the improved electric properties including the high memory window and low leakage current density. In particular, the maximum value of the memory window is 2.0V under the applied voltage of 9V for the Pt/PZT(200 nm, $400^{\circ}C)/PbO(80 nm)/Si$ structures with the PbO buffer layer deposited at the substrate temperature of $300^{\circ}C$.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1069-1074
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• 1999

본 연구에서는 PbZr(sub)0.53Ti(sub)0.47O$_3$(PZT) 박막을 복수 도포함에 따른 박막내의 응력을 온도의 함수로 실시간(in situ) 측정하였으며, 응력발생의 원인에 박막의 건조, 열분해(pyrolysis), 치밀화 및 결정화 현상과 연관시켜 설명하였다. 도포직후 단층박막에 생성된 55MPa의 인장응력은 가열됨에 따라$ 300^{\circ}C$-$350^{\circ}C$에서 최대 145MPa로 증가하였으며, 박막내의 응력은 모든 온도구간에서 항상 인장응력을 나타내었더. 다층도포시 $650^{\circ}C$까지 열처리 주기를 완료한 층이 두꺼워질수록 새로 도포한 층의 영향은 점차 감소하였으며, 9층박막에 이르러서는 가열과 냉각에 따라 응력이 동일하게 변화하였다. 응력측정 결과 다층박막의 치밀화는 $350^{\circ}C$에서 시작되어 $520^{\circ}C$-$550^{\circ}C$ 부근에서 완료되는 것으로 나타났으며 치밀화가 시작하는 온도는 미세경도 측정결과와 일치하였다. $PbTiO_3$(PT)와 달리 PZT 다층박막은 Si 기판 위에서 perovskite로의 결정화가 일어나지 않았다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.11
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• pp.904-911
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• 2001

High-density lead zirconate titanate(Pb(Zr$\_$0.53/Ti$\_$0.47/)O$_3$, PZT) ceramics were fabricated by a new milling-precipitation(MP) process improved from the conventional solid state process. This process was progressed by a milling impregnation through mixing ZrO$_2$ and TiO$_2$ powders with lead nitrate(Pb(NO$_3$)$_2$) water solution in zirconia ball media, and then milling precipitation was induced from precipitation of PbC$_2$O$_4$ by adding ammonium of oxalate monohydrate((NH$_4$)$_2$C$_2$O$_4$$.$H$_2$O) as a precipitant. As a result of this process, single-phase perovskite structure was formed at the calcination temperature of 750$\^{C}$ for Pb(Zr$\_$0.53/Ti$\_$0.47/)O$_3$ powders. In addition, the highest density at the sintering temperature of 1100$\^{C}$ was obtained, because of the highly sinterable PZT Powders ground through the re-milling process. Piezoelectric and dielectric properties of sintered sample were improved by MP process.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.94.2-94.2
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• 2012

에너지 하베스터에 적용 가능한 $0.72Pb(Zr_{0.47}Ti_{0.53})O_3-0.28Pb((Ni_{0.55}Zn_{0.45})_{1/3}Nb_{2/3})O_3$ (PPZNN) 후막세라믹의 구조적 압전 특성을 조사하였다. $850^{\circ}C$에서 하소를 마친 파우더를 72시간 볼 밀링 처리한 후, 테잎 캐스팅 공정을 이용하여 0.3mm의 두께로 PPZNN 압전 세라믹을 제조하였다. $900^{\circ}C$에서 $1200^{\circ}C$까지 다양한 온도에 소결하여 온도가 증가될수록 정방형 구조로 상전이 거동하는 모습을 보였으며, 특히 $1050^{\circ}C$에서 소결된 PPZNN후막 세라믹은 이차상이 없는 고밀도의 미세구조가 관찰되었다. $d_{33}$=440 pC/N 그리고 kp = 0.46의 우수한 압전 특성을 보였으며, 에너지 변환 성능을 나타내는 $d33{\cdot}g33$ 값은 약 $20439{\times}10^{-15}\;m^2/N$ 로 매우 우수하였다. PPZNN후막 세라믹을 유니몰프 켄틸레버 형태로 제작하여 발전 평가하였을 때 저항이 470 $k{\Omega}$에서 969 ${\mu}W$ (4930 ${\mu}W/cm^3$)로 관찰되었다. PPZNN 후막 압전 세라믹은 향후 압전에너지 하베스터 소재로 다양한 응용분야에 사용될 것으로 예상된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.20-23
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• 1991

In this study, 0.05Pb(Mn$\_$1/3/Nb$\_$2/3/)O$_3$+ 0.95Pb(Zr/Ti)O$_3$+x[wt%]Cr$_2$O$_3$piezoelectric ceramics were fabricated by Hot-press method, and its structural, dielectrical, piezoelectrical properties, temperature stability and aging characteristics were investigated. Among the MPB and tetragonal compositions, the specimens with 0.2, 0.3 and 0.4 [wt%] Cr$_2$O$_3$ additive amount had the poisson ratio more than 1/3. At tetragonal phase, the aging was small, and the temperature stability was improved by Cr addition. The specimen most suitable to the HF device substrate was the one with the composition of 47/53 (Zr/Ti) an 0.4 [wt%] Cr$_2$O$_3$addition.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.885-887
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• 1999

The piezoelectric ceramic resonator using length extensional vibration rather than contour extensional vibration in terms of the size is suitable for personal portable communication. In this paper, $Pb(Zr_{x}Ti_{l-x})O_{3}$ + r[wt%]$Cr_{2}O_{3}$ ceramics, x=0.56, 0.53, 0.50 (ie, Zr/Ti ratios = 56 /44, 53/47, 50/50) r=0, 0.3[wt %], were fabricated. Temperature stability of length extensional vibration mode of those specimens was investigated. Both crystal structure with rhombohedral phase in the case of no addition of $Cr_{2}O_{3}$ and crystal structure with morphotrophic phase boundary in case of additions of 0.3[wt %]$Cr_{2}O_{3}$ had the vest temperature stability and improved temperature stability through thermal aging.