• E2M - 전기 전자와 첨단 소재
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• 제1권2호
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• pp.162-167
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• 1988

본 논문에서는 Pb(Sn$_{1}$7/Mn$_{2}$7/Nb$_{4}$7/)O$_{3}$- Pb(Zr, Ti)O$_{3}$계에 La$_{2}$O$_{3}$를 첨가하여 그양에 따른 압전일 전기력 성질의 변화를 고찰하였다. La$_{2}$O$_{3}$ 첨가량의 증가에 따라 유전상수, 압전 d상수, 유전손실, 비저항 등은 증가하였으나 경시 변화량은 오히려 감소하였다.

• E2M - 전기 전자와 첨단 소재
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• 제9권2호
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• pp.132-137
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• 1996

Pb(Zr$_{x}$Ti$_{1-x}$ )O$_{3}$ solutions prepared by sol-gel processing with different Zr/Ti ratio were coated on Pt/SiO$_{2}$/Si substrates using spin coating method. Coated films were annealed by rapid thermal annealing at 650.deg. C for 20sec to fabricate Pb(Zr, Ti)O$_{3}$ ferroelectric thin films. Electrical properties of the films such as dielectric constant and loss, ferroelectric hysteresis, fatigue, switching time, and leakage current were measured. Hysteresis of the films with different Zr/Ti ratio yield Pr ranging 10-21.mu.C/cm$^{2}$, E$_{c}$ ranging 37.5-137.5kV/cm. Hysteresis curve was changed from square-type to slim type according to increasing Zr contents. Switching time was faster than 180ns, and leakage current was about 20.mu.A/cm$^{2}$. The film underwent above 10$^{8}$ cycles of reversed polarization showed fatigue with increased coercive field and decreased remnant polarization.tion.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1240_1241
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• 2009

In this paper, sol-gel-spin coated $Pb(ZrTi)O_3$ thin film with $ZrO_2$ buffer-layer and $PbTiO_3$ seed-layer was investigated for vibration MEMS energy harvester to scavenge power from ambient vibration via d33 piezoelectric mode. Piezoelectric thin film deposition techniques on insulating layer is the important key for $d_{33}$ mode of piezoelectric vibration energy harvester. $ZrO_2$ buff-layer was utilized as an insulating layer. $PbTIO_3$ seed-layer was applied as an inter-layer between PZT and $ZrO_2$ layer to improve the crystalline of PZT thin film. The fabricated PZT thin film had a remanent polarization of 5.3uC/$cm^2$ and the coercive field of 60kV/cm. The fabricated energy harvester using PZT thin film with PTO seed-layer generated 1.1uW of electrical power to $2.2M{\Omega}$ of load with $4.4V_{pvp}$ from vibration of 0.39g at 528Hz.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.30.1-30.1
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• 2009

PZT(Pb(Zr, Ti)$O_3$ 압전세라믹스는 뛰어난 압전 특성과 강유전 특성을 가지고 있어서 현재 널리 사용되고 있다. 하지만 PZT세라믹스는 큐리온도 이상에서 그 특성을 잃게 되고 높은 온도에서의 응용이 제한된다. 따라서 높은 큐리온도를 가지는 압전체를 개발하기 위한 연구가 많이 이루어지고 있다. $PbTiO_3$의 경우에는 $Bi(Zn_{0.5}Ti_{0.5})$, $BiFeO_3$등의 Bi계 세라믹스를 치환하면서 큐리온도가 올라가는 결과가 보고되고 있다. 하지만 이것은 PZT세라믹스 보다 압전 및 유전 특성이 상당히 낮다. 따라서 본 연구에서는 $(1-x)PbZrO_3-xPbTiO_3$조성에 Bi(Me)$O_3$(Me:Zn, Ti, Fe, Al)를 치환하여 압전특성 및 강유전 상전이 온도를 조사하였다. 모든 시편들은 고상반응법으로 제조하였고, 제조한 시편으로 조성에 따른 압전특성 및 유전특성의 변화를 측정하였다. 그리고 이를 통해 큐리온도는 PZT의 MPB조성근처에서 Bi계 세라믹의 치환은 $T_C$가 낮아 졌으나, Tetragonal 상을 가지고 있는 Ti-rich인 조성에서는 $T_C$가 높아지는 것을 관찰하였다.

• 한국세라믹학회지
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• 제33권11호
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• pp.1260-1266
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• 1996

The effects of SiO2 MnO2 and sintering atmospheres (O2, N2) on the piezoelectric properties and densification behaviors of Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 were investigated. The addition of SiO2 to the system enhanced the rate of densification but supressed the rate of grain growth. On the other hand the addition of MnO2 to the system did not nearly affect the rate of densification but increased slightly the rate of grain growth The densification of Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 containing of SiO2 or MnO2 was promoted with increasing the partial pressure of O2. The relative dielectric constant ($\varepsilon$r) and piezoelectric constant (d33) of Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 containing of SiO2 or MnO2 sintered under O2 atmosphere were higher than under N2 atmosphere. Whereas the mechanical quality factor (Qm) of specimens sintered under O2 atmosphere were lower than under N2 atmosphere. Thus the sintering atmosphere of O2 and N2 in Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 containing of SiO2 or MnO2 acted as donor and acceptor respectively. As the amount of SiO2 increased the relative dielectric constant ($\varepsilon$r) and piezoelectric constant (d33) of Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 but the mechanical quality factor (Qm) did not nearly change, In the case of the addition of MnO2 to the system the relative dielectric constant ($\varepsilon$r) and piezoelectric constant (d33) of Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 sintered under O2 atmosphere decreased rapidly with increasing the amount of MnO2 but they were unchanged with increasing the amount of MnO2 under N2 sintering atmosphere. Therefore the differences of the relative dielect-ric constant ($\varepsilon$r) and piezoelectric constant (d33) due to sintering atmosphere were diminished as the amount of MnO2 increased.

• E2M - 전기 전자와 첨단 소재
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• 제1권2호
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• pp.152-161
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• 1988

Pb(Zr, Ti)O$^{3}$-Pb(Mg, Nb)O$^{3}$계에 MnO$_{2}$첨가량을 변화시켜 소결성, 미세구조, 유전상수, 비저항 및 압전특성에 미치는 영향을 XRD, EDAX 및 SEM을 이용하여 미세구조를 관찰하고 실험을 통하여 전기적 성질에 미치는 영향을 밝혔다. 비저항의 변화없이 그레인 성장이 억제되는 $MnO_{2}$의 첨가량은 0.4wt%이었으며 이때 분말의 합성이 촉진되어 소성된 시편의 밀도가 증가하였다. 그러나 고상반응의 범위를 벗어나는 과잉 $MnO_{2}$는 편석이 되어 그레인 경계상에 모임이 확인되었고 또한 기공을 형성하여 밀도를 낮추었다. $Mn^{+4}$는 $Mg^{+2}$ 와 치환되어 페로브스카이트 구조의 "A" 결핍을 유발하였으며 이것이 비저강을 감소시키는 원인으로 밝혀졌다.감소시키는 원인으로 밝혀졌다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.14-16
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• 1995

Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ ceramic thin films were fabricated from an alkoxide-based solution by Sol-Gel method. Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ co-ramic thin films were formed by spin coating method on Pt/$SiO_2$/Si substrate at 4000[rpm] for 30 [sec]. Coated specimens were dried on the hot-plate at 400[$^{\circ}C$] for 10[min]. The coating process was repeated 6 times and then sintered at temperature between 500 ~ 800[$^{\circ}C$] for 1 hour. The ferroelectric perovskite phases precipitated under the sintering of 700[$^{\circ}C$] for 1 hour. Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ thin film sintered at 700[$^{\circ}C$] for 1hour showed good dielectric constant (2133) and dielectric loss (2.2[%]) Properties. The switching voltage, switching time and leakage currents density were 3.0[V], 1.7[${\mu}$sec] , 160[pA/$\textrm{cm}^2$] repectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.168-170
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• 1994

Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ ceramic thin films were fabricated from an alkoxide-based solution by Sol-Gel method. Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ ceramic thin films were formed by spin coating method on Pt/$SiO_2$Si substrate at 4000ppm for 30 seconds. The coating process was repeated 6 times and then heat-treated at temperature between 500∼800[$^{\circ}C$] for 1 hour. The final thickness of the thin films were about 4800[A]. The ferroelectric perovskite phases precipitated under the heat-treated at 700[$^{\circ}C$] for 1 hour. Pb($Zr_{0.52}$$Ti_{0.48}$)$O_3$ thin films heat-treated at 700[$^{\circ}C$] for 1 hour showed good dielectric and ferroclectric properties.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1454-1456
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• 1994

$Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramic thin films were fabricated from an alkoxide-based solution by Sol-Gel method. $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramic thin films were formed by spin coating method on $Pt/SiO_2/Si$ substrate at 3000rpm for 30 seconds. The coating process was repeated 6 times and then heat-treated at temperature between 500 - $800[^{\circ}C]$ for 1 hour. The final thickness of the thin films were about 4800[A]. The 100% ferroelectric perovskite phases precipitated under the heat treated at $700[^{\circ}C]$ for 1 hour. $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films heat-treated at $700[^{\circ}C]$ for 1 hour showed good dielectric constant (812) property.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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• pp.193-195
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• 1994

In this study, the structural, dielectric and piezoelectrical properties of $xPb(Mg_{1/2}W_{1/2})O_3-(1-x)[0.41Pb(Ni_{1/3}Nb_{2/3})O_3-0.36PbTiO_3-0.23P Zr)_3]$ (x=0, 0.01, 0.02, 0.03, 0.04, 0.05) system ceramics were investigated. The dielectric constant ${\varepsilon_{33}}^{\tau}$ at loon temperature increased up to 3mol% PMW and decreased with further PMW content. The specimen with 1mol% $Pb(Mg_{1/2}W_{1/2})O_3$, which has the ${\varepsilon_{33}}^{\tau}=5509$, kp=59[%] and $d_{33}=758{\times}10^{-12}[C/N]$, exhibits good characteristics.