• Bulletin of the Korean Chemical Society
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• v.23 no.8
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• pp.1078-1084
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• 2002

The formation temperature for the perovskite lead zirconate titanate [Pb(Zr,Ti)O3, PZT] derived from sol-gel route was lowered by more than $100^{\circ}C$ with the addition of crystallographically suitable seed particles, such as barium titanat e (BT) or PZT. We investigated the effect of seeding on the crystallization of perovskite phase and in the microstructure of the sol-gel derived PZT powder by varying the concentration, size and chemical species of seed particles. The phase transition as a function of temperature was monitored by DTA, XRD, and Raman spectroscopy, and the interface between the seed particle and grown PZT layer was analyzed by SEM and high resolution TEM techniques. It was found that both the heterogeneous and homogeneous nucleation contributes competitively in the formation of perovskite PZT grains.

• Journal of the Korean Ceramic Society
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• v.29 no.10
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• pp.806-814
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• 1992

The aim of this study was to investigate the change in compressive strength, freacture behavior and degradation of piezoelectric properties with compressive cyclic loading in Pb(Zr, Ti)O3 of tetragonal, morphotropic phase boundary and rhombohedral composition. The highest compressive strength was found in rhombohedral composition. After poling treatment the strength increased by 8.4% and 6.5% in tetragonal and morphotropic phase boundary compositions respectively while changed little in rhombohedral. The increase of compressive strength after poling treatment is believed to be due to the internal stress around grain boundary by domain alginment toward electric field direction in the microstructures having tetragonality and the occurrence of domain switching to the direction perpendicular to electrical field during fracture. Fracture mode relatively change from transgranular to intergranular was observed in the large grain sized tetragonal and morphotropic phase boundary compositions before and after poling but the transgranular fracture mode always remained in the rhombohedral composition. From the X-ray diffractometer analysis the domains parallel to the electric field direction is known to undergo rearrangement during the cyclic loading into random direction that is responsible for the degradation of piezoelectric property.

• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2509-2511
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• 1998

In this study, we formed the piezoelectric film and estimated its characteristics for sensor application. The $Pb(Zr,Ti)O_3(PZT)$ was chosen as piezoelectric material and we used Sol-Gel method to form film. To increase film thickness, the multiple coatings were performed, and the good characteristics obtained in thick film compared to thin film. Because PZT film showed fine etching property as well as other good characteristics, it was thought that it was appropriate material for sensor fabrication.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.103-104
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• 2006

$Pb(Zr,Ti)O_3(PZT)$ is very attractive ferroelectric materials for ferroelectric random access memory (FeRAM) applications because of its high polarization ability and low process temperature. However, Chemical Mechanical Polishing (CMP) pressure and velocity must be carefully adjusted because FeRAM shrinks to high density devices. The contaminations such as slurry residues due to the absence of the exclusive cleaning chemicals are enough to influence on the degradation of PZT thin film capacitors. The surface characteristics of PZT thin film were investigated by the change of process parameters and the cleaning process. Both the low CMP pressure and the cleaning process must be employed, even if the removal rate and the yield were decreased, to reduce the fatigue of PZT thin film capacitors fabricated by damascene process. Like this, fatigue characteristics were partially controlled by the regulation of the CMP process parameters in PZT damascene process. And the exclusive cleaning chemicals for PZT thin films were developed in this work.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.13-22
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• 1999

Both the resonance and ultrasonic techniques are standard methods far characterizing the physical properties of piezoelectric materials. However, we found that each technique can only offer a few reliable measurements while the rest often have errors or impossible to implement because of the sample requirements. This paper show that one can use the combination of both techniques to achieve much better accuracy and be able to get the complete set of elastic, dielectric and piezoelectric coefficients using fewer samples. Using an ultrasonic spectroscopy we have also measure the dispersion of the ultrasonic velocity and the attenuation up to 65 MHz. Pb(Zr,Ti)O$_3$[PZT] ceramics were used as examples fur both studies.

• Transactions on Electrical and Electronic Materials
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• v.6 no.2
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• pp.35-38
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• 2005

Pb(Zr$_{0.8}$Ti$_{0.2}$)O$_{3}$ powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT thick films were fabricated by the screen-printing techniques on Pt/Ah03 substrates. The structural properties were examined as a function of sintering temperature. The particle size distribution of the PZT powder derived from the sol-gel process is uniform with the mean particle size of about 2.6 m. As a result of the DTA, the formation of the polycrystalline perovskite phase was observed at around $890^{circ}$CC. In the X-ray diffraction analysis, all PZT thick films showed a perovskite polycrystalline structure without a pyrochlore phase. The perovskite crystallization temperature of PZT thick films was about $890^{circ}$C. The average thickness of the PZT thick films was approximately 80-90 m.

• Journal of the Korean institute of surface engineering
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• v.31 no.4
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• pp.209-216
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• 1998

It is well knownthat electroledd plating is the desirable surface treatment method which is being widely used to all kinds of material such as requiring corrosing resistance, wear resistance and conductivity, especially nonconductivity materials' surface plating. However, it is suggested that there are some problems that must be solved, for exaple, rate of plating, corrosion resistance, thickness of plating film etc. Therefore in this paper, when electroless nickel plating was performed on the PZT(Pb(Zr,Ti))with varying of solution composition such as NaOH, and $H_2NCH_2COOH$, the effect of the rate of plating and corrosion resistance were investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.3
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• pp.200-205
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• 2000

This paper describes the structure modeling and operation characteristics of MFMIS(metal-ferroelectric-metal-insulator-semiconductor) device using the Tsuprem4 which is a semiconductor device tool by Avanti. MFMIS device is being studied for nonvolatile memory application at various semiconductor laboratory but it is difficult to fabricate and analyze MFMIS devices using the semiconductor simulation tool: Tsuprem4, medici and etc. So the new library and new materials parameters for adjusting ferroelectric material and platinum electrodes in the tools are studied. In this paper structural model and operation characteristics of MFMIS devices are measured, which can be easily adopted to analysis of MFMIS device for nonvolatile memory device application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.224-227
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• 1999

Ferroelectric Pb(Zr$\sub$0.52/Ti$\sub$0.48/)O$_3$ thin films were fabricated by pulsed laser deposition, mainly varying process conditions such as substrate temperature, oxygen pressure, and laser energy, PZT films annealed at more than 600$^{\circ}C$ were crystallized into pure perovskite phases regardless of deposition temperatures. Lower deposition temperature of 400$^{\circ}C$ accompanied with post-annealing at 650$^{\circ}C$ resulted in denser microstructures with extremely small grains compated to those of thin films annealed at higher deposition temperatures. Hysteresis curves of thin film with small grains exhibitied good squareness and low leakage characteristics.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.6 s.171
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• pp.199-206
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• 2005

In this work, a theoretical investigation on the energy harvesting is undertaken using one of potential smart materials; piezoelectric material. The energy equations fur both square and circular types of the piezoelectric material are derived, and the energy generated from two commercially available Products: $PZT (Lead/Zirconium/Titanium: Pb(Zr,\;Ti)O_3)$ and PVDF (polyvinylidene fluoride) are investigated in terms of the thickness and area. In addition, a finite element analysis (FEA) is undertaken to obtain the generated energy due to the uniform pressure applied on the surface of the piezoelectric materials. A comparative work between the theory and the FEA is made followed by the brief discussion on the usage of the harvested energy for Bio MEMS.