• Transactions on Electrical and Electronic Materials
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• v.7 no.6
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• pp.279-282
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• 2006

[ $Pb(Zr_{0.4}Ti_{0.6}O_{3}\;and\;Pb(Zr_{0.6}Ti_{0.4})O_{3}$ ] paste were made and alternately screen-printed on the $Al_{2}O_{3}$ substrates. We have introduced a press-treatment to obtain a good densification of screen printed films. The porosity of the thick films was decreased with increasing the applied pressure and the thick films pressed at 60 MPa showed the dense microstructure and thickness of about $76\;{\mu}m$. The remanent polarization and coercive field increased with increasing applied pressure and the values for the PZT thick films pressed at 60 MPa were $17.04{\mu}C/cm^{2}$ and 78.09 kV/cm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.219-222
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• 2003

$0.2(PbMg_{1/3}Nb_{2/3}O_3)-0.8(PbZr_{0.475}Ti_{0.525}O_3)$ 조성을 이용하여 $5{\times}5{\times}5mm^3$의 적층형 세라믹 액츄에이터 소자를 tape casting 방법으로 제작하였다. 전극재로서는 Ag-Pd를 이용하여 총 50층의 layer를 적층하였으며, 적층된 액츄에이터를 $1100^{\circ}C$의 온도에서 소결하였다. X-ray diffractometer를 이용하여 제작된 소자와 열화된 소자의 구조적인 특성을 분석하였다. 제작된 소자의 열화 특성을 알아보기 위하여 60 Hz 의 triangular wave를 인가하여 열화전과 후의 p-E hystcresis loop의 변화를 살펴보았으며, 인가된 전압의 변화에 따라서 소자에서 발생되는 양의 열을 측정하였다. 파괴된 소자의 파단면에 대한 SEM 분석을 통하여 소자의 파괴 메카니즘을 알아보도록 하였다. 이로부터 전기적 기계적 열화가 소자의 동작에 미치는 영향에 대해서 알아 보았다.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.199-202
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• 1999

반강유전 물질인 Pb[(Zr. Sn)Ti]NbO₃를 La/sub 0.5/Sr/sub 0.5/CoO₃/Pt/Ti/SiO₂/Si 기판상에 RF 마그네트론 스퍼터링 방법으로 박막화하여 그 결정성과 전기적 특성을 조사하였다. 80 W의 RF power, 400℃의 기판온도, Ar:O₂= 9:0.5의 분위기에서 증착되고, 650 ℃에서 10초동안 RTP(Rapid Thermal Process) 방법으로 열처리된 박막이 가장 우수한 페로브스카이트 구조를 보였으며, 10 ㎑ 에서 유전상수(ε')는 721, 유전손실(tan δ)은 0.06을 나타내었다. 잔류분극(Pr)은 15.5 μC/㎠ 였으며, 항전계(Ec)는 51 ㎸/㎝로 비교적 낮은 값을 나타내었다.

• Electrical & Electronic Materials
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• v.6 no.3
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• pp.207-213
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• 1993

Pb(Z $r_{0.54}$, $Ti_{0.46}$) $O_{3}$에 B $i_{2}$ $O_{3}$를 0.0wt%까지 첨가하여 미세구조, 유전, 압전, 성질에 미치는 영향을 고찰하였다. B $i_{2}$ $O_{3}$의 고용범위는 약 0.5~0.7wt%정도 이었고 B $i_{2}$ $O_{3}$ 첨가량이 증가함에 따라서 결정립의 크기가 감소하였다. B $i_{2}$ $O_{3}$첨가량이 증가함에 따라 고용한계까지는 $d_{33}$ , tan .delta., .xi.$_{r}$(분극후)값이 증가하였으며 Qm값과 밀도는 감소하였다. $K_{p}$ 값은 B $i^{3+}$ 가 P $b^{2+}$를 치환하므로 형성되는 Pb공공의 형성에 의해 자발분극이 증가됨에 따라 증가하였다.다.

• Analytical Science and Technology
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• v.10 no.6
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• pp.439-444
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• 1997

Twelve kinds (1set) standard materials of chemical ingredients of lead zirconate titanate[$Pb(ZrTi)O_3$] have been developed in order to determine fast and accurate measurement of X-ray fluorescence spectrometry. Especially, we used diluted(ahout sixteen times) filling compound($Li_2B_4O_7/LiBO_2=4/1$) to consider removal effect of matrix, storage convenience, and homogenous characteristics. As a result from the four different laboratories, we obtained extremly good agreement about the standard curve on twelve standard materials which containing eleven elements, PbO, $ZrO_2$, $TiO_2$, SrO, $WO_3$, $La_2O_3$, $Cr_2O_3$, MgO, $Nb_2O_5$, and $MnO_2$. The correlation factor of standard curve was over 0.998. However, ZnO has relatively low correlation factor, 0.977, because the concentration was 10ppm lower than other original materials. This analysis reveals that ZnO has shown the poor linearity as well as low fluorescence intensity. In present work, XRF standard materials are useful for determining a rapid and accurate results for major and minor elements concentration among PZT.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.335-337
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• 1995

In this study, $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramic thin films were fabricated from an alkoxide-based by Sol-Gel method. $Pb(Zr_{0.52}Ti_{0.48})O_3$ stock solution was made and spin-coated on the $Pt/SiO_2/Si$ substrate at 4000[rpm] for 30[sec]. Coated specimens were dried at 400[$^{\circ}C$] for 10 [min]. The coating process was repeated 4 times and then heat-treated at 500$\sim$800[$^{\circ}C$], 1 hour. The final thickness of the thin films were about 3000[A]. The crystallinity and microstructure of the thin films were investigated for varing the sintering condition. The ferroelectric perovskite' phases precipitated under the sintering of 700[$^{\circ}C$] for 1 hours. In the $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films sintered at 700[$^{\circ}C$] for 1 hour, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively. $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin film capacitors having good dielectric and electrical properties are expected for the application to the dielectric material of DRAM.

• Journal of Sensor Science and Technology
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• v.17 no.6
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• pp.418-424
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• 2008

The PZT based piezoelectric thick films prepared by screen printing method have been mainly used as a functional material for MEMS applications due to their compatibility of MEMS process. However the screen printed thick films generally reveal poor electrical and mechanical properties because of their porous microstructure. To improve microstructure we mixed attrition milled powder with ball milled powder of 0.01Pb$(Mg_{1/2}W_{1/2})O_3$-0.41Pb$(Ni_{1/3}Nb_{2/3})O_3$-$0.35PbTiO_3$-$0.23PbZrO_3$+0.1 wt% ${Y_2}{O_3}$+1.5 wt% ZnO composition. By mixing 25 % of attrition milled powder and 75 % of ball milled powder, the broadest particle size distribution was obtained, leading to a dense thick film with crack-free microstructure and improved dielectric properties. The X-ray diffraction analysis revealed that the film was in wellcrystallized perovskite phase. The remanent polarization was increased from $13.7{\mu}C/cm^2$ to $23.3{\mu}C/cm^2$ at the addition of 25 % attrition milled powder.

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.05a
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• pp.62-62
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• 1997

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.05a
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• pp.93-93
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• 1998

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.05a
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• pp.110-110
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• 1998