• Title/Summary/Keyword: $Pb(Mg_{1/3}Nb_{2/3})O_3 PbZrO_3$

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Field-induced Strains and Polarization Switching Mechanisms in $Pb(Mg_{1/3}Nb_{2/3})O_3-PbZrO_3$ Ceramics ($Pb(Mg_{1/3}Nb_{2/3})O_3-PbZrO_3$계 요업체의 전계 유기변위와 분극특성)

  • 김명철
    • Journal of the Korean Ceramic Society
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    • v.34 no.6
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    • pp.569-576
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    • 1997
  • Electrically-induced strain and polarization studies of the (1-x)Pb(Mg1/3Nb2/3)O3-PbZrO3 crystalline solutions have been done. Dielectric constants with temperature were investigated for 0$\leq$x$\leq$0.95. With increasing PbZrO3 content the transition maxima were found to move to higher temperature region and DPT (Diffused Phase Transition) properties were decreased for x$\leq$0.60. Phase transition between ferroelectric states and antiferroelectric states was confirmed for 0.93$\times$10-3 for 0.4

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Microstructure and Electrical Properties of Pb(Mg1/3Nb2./3)O3-PbTiO3-PbZrO3 Ceramics Modified with Yttria (Pb(Mg1/3Nb2./3)O3-PbTiO3-PbZrO3계에 Yttria 첨가시 미세구조와 전기적 물성변화에 관한 연구)

  • 김창삼;이응상
    • Journal of the Korean Ceramic Society
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    • v.24 no.3
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    • pp.263-269
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    • 1987
  • It is investigated that the determination of the correlation between the change of microstructure and electrical properties. Yttria is added to the compositiojn of rhombohedral region in Pb(Mg1/3Nb2./3)O3-PbTiO3-PbZrO3 ternary system. Average grian size, lattice parameters and distribution of yttrium are characterized by XRD, SEM and EDS. Electrical properties are determined by measurement of Curie temperature, piezoelectric properties and hysteresis loops. The results are as follows; 1. Both lattice parameters, a and ${\alpha}$, are changed by addition of yttria to the composition of rhomboheadral region in Pb(Mg1/3Nb2./3)O3-PbTiO3-PbZrO3 ternary system and Curie temperature is proportional to the values at (90-${\alpha}$).

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The Study of the Properties of $Pb(Mg_{0.15} W_{0.15})Ti_{0.35}-Zr_{0.35}O_3$ Ceramics Modified with $La_2O_3$, $Nb_2O_5$ and $Al_2O_3$ (첨가제에 따른 $Pb(Mg_{1/2} W_{1/2}) O_3-PbTiO_3-ObZrO_3$ 고용체의 특성에 대한 연구)

  • 안영필;황학인;홍진녕
    • Journal of the Korean Ceramic Society
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    • v.22 no.2
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    • pp.17-24
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    • 1985
  • In the composition of $Pb(Mg_{0.15} W_{0.15})Ti_{0.35}-Zr_{0.35}O_3$ the effect of particle size on PbO vaporization were measured, . The initial step of discontinuous vaporization of unreated PbO during the calcining process was depended on the particle size. All additives $La_2O_3Nb_2O_5$ and $Al_2O_3$ inhibited the grain growth of the composition $Pb(Mg_{0.15} W_{0.15})Ti_{0.35}-Zr_{0.35}O_3$ +2wt% excess PbO. The dielectric and piezoelectric properties of the composition $Pb(Mg_{0.15} W_{0.15})Ti_{0.35}-Zr_{0.35}O_3$ were improved by the addition of 2wt% excess PbO and proper additive. The electromechanical planar coupling factor of 0.65 and mechnical quality factor of 390 could be obtained by adding 5wt% $Nb_2O_5$ to the composition 2wt% excess PbO+$Pb(Mg_{0.15} W_{0.15})Ti_{0.35}-Zr_{0.35}O_3$.

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Electrical properties of Low Fired Pb(Mg,Te,Mn,Nb)$O_3-Pb(Zr,Ti)O_3$ Ceramics (저온에서 소결한 Pb(Mg,Te,Mn,Nb)$O_3-Pb(Zr,Ti)O_3$세라믹스의 전기적 특성)

  • 정수태;조상희
    • Electrical & Electronic Materials
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    • v.9 no.7
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    • pp.652-659
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    • 1996
  • Sintering characteristics and electrical properties of xPb(Mg$_{1}$8/Te$_{1}$8/Mn$_{1}$4/Nb$_{1}$2/) $O_{3}$-(1-x) Pb (Zr$_{1}$2/ $Ti_{1}$2/) $O_{3}$ (x=0.075, 0.1, 0.125) ceramics are investigated. A sintering temperature of ceramics could be reduced to 950.deg. C by a reaction between PbO and B site compound material. The physical properties of 0.1Pb(Mg, Te, Mn, Nb) $O_{3}$ - 0.9Pb(Zr, Ti) $O_{3}$ bulk ceramic with 3wt% glass frit(0.857PbO-0.143W $O_{3}$) were following : den = 7.95 g/cm$^{3}$, T$_{c}$=340.deg. C, .epsilon.$_{33}$= 754, k$_{31}$=0.3 and Q.=1780. The 3-layer piezoelectric transformer by using a tape casting method showed a good monolithic structure, and its voltage setup ratio was 2.5 times higher than that of a single device by using bulk ceramics.s.s.

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Dielectric and Piezoelectric Characteristics of Ceramics in the $Pb(Mg_{1/2}W_{1/2})O_3-Pb(Ni_{1/3}Nb_{2/3})O_3-PbTiO_3-PbZrO_3$ system ($Pb(Mg_{1/2}W_{1/2})O_3-Pb(Ni_{1/3}Nb_{2/3})O_3-PbTiO_3-PbZrO_3$계 세라믹스의 유전 및 압전 특성)

  • Kim, Woo-Hyun;Yoon, Kwang-Hee;Yoon, Hyun-Sang;Park, Yong-Wook;Park, Chang-Yeop
    • Proceedings of the KIEE Conference
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    • 1994.11a
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    • pp.193-195
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    • 1994
  • In this study, the structural, dielectric and piezoelectrical properties of $xPb(Mg_{1/2}W_{1/2})O_3-(1-x)[0.41Pb(Ni_{1/3}Nb_{2/3})O_3-0.36PbTiO_3-0.23P Zr)_3]$ (x=0, 0.01, 0.02, 0.03, 0.04, 0.05) system ceramics were investigated. The dielectric constant ${\varepsilon_{33}}^{\tau}$ at loon temperature increased up to 3mol% PMW and decreased with further PMW content. The specimen with 1mol% $Pb(Mg_{1/2}W_{1/2})O_3$, which has the ${\varepsilon_{33}}^{\tau}=5509$, kp=59[%] and $d_{33}=758{\times}10^{-12}[C/N]$, exhibits good characteristics.

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The effect of$ MnO_2$on the electrical properties in Pb(Zr, Ti)$O_3$/-Pb(Mg, Nb)$O_3$ (Pb(Zr, Ti)$O_3$-Pb(Mg, Nb)$O_3$$MnO_2$첨가가 전기적 성질에 미치는 영향)

  • 김현재;조봉희;정형진;박창엽
    • Electrical & Electronic Materials
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    • v.1 no.2
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    • pp.152-161
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    • 1988
  • Pb(Zr, Ti)O$^{3}$-Pb(Mg, Nb)O$^{3}$계에 MnO$_{2}$첨가량을 변화시켜 소결성, 미세구조, 유전상수, 비저항 및 압전특성에 미치는 영향을 XRD, EDAX 및 SEM을 이용하여 미세구조를 관찰하고 실험을 통하여 전기적 성질에 미치는 영향을 밝혔다. 비저항의 변화없이 그레인 성장이 억제되는 $MnO_{2}$의 첨가량은 0.4wt%이었으며 이때 분말의 합성이 촉진되어 소성된 시편의 밀도가 증가하였다. 그러나 고상반응의 범위를 벗어나는 과잉 $MnO_{2}$는 편석이 되어 그레인 경계상에 모임이 확인되었고 또한 기공을 형성하여 밀도를 낮추었다. $Mn^{+4}$$Mg^{+2}$ 와 치환되어 페로브스카이트 구조의 "A" 결핍을 유발하였으며 이것이 비저강을 감소시키는 원인으로 밝혀졌다.감소시키는 원인으로 밝혀졌다.

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Piezoelectric properties and microstructure of 0.01Pb(Mg1/2W1/2)O3-0.41Pb(Ni1/3Nb2/3)O3-0.35PbTiO3-0.23PbZrO3thick film with particle size distribution (입자 크기 분포에 따른 0.01Pb(Mg1/2W1/2)O3-0.41Pb(Ni1/3Nb2/3)O3-0.35PbTiO3-0.23PbZrO3 후막의 미세구조 및 압전특성)

  • Moon, Hi-Gyu;Song, Hyun-Cheol;Kim, Sang-Jong;Choi, Ji-Won;Kang, Chong-Yun;Yoon, Seok-Jin
    • Journal of Sensor Science and Technology
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    • v.17 no.6
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    • pp.418-424
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    • 2008
  • The PZT based piezoelectric thick films prepared by screen printing method have been mainly used as a functional material for MEMS applications due to their compatibility of MEMS process. However the screen printed thick films generally reveal poor electrical and mechanical properties because of their porous microstructure. To improve microstructure we mixed attrition milled powder with ball milled powder of 0.01Pb$(Mg_{1/2}W_{1/2})O_3$-0.41Pb$(Ni_{1/3}Nb_{2/3})O_3$-$0.35PbTiO_3$-$0.23PbZrO_3$+0.1 wt% ${Y_2}{O_3}$+1.5 wt% ZnO composition. By mixing 25 % of attrition milled powder and 75 % of ball milled powder, the broadest particle size distribution was obtained, leading to a dense thick film with crack-free microstructure and improved dielectric properties. The X-ray diffraction analysis revealed that the film was in wellcrystallized perovskite phase. The remanent polarization was increased from $13.7{\mu}C/cm^2$ to $23.3{\mu}C/cm^2$ at the addition of 25 % attrition milled powder.

Structure and Dielectric Properties of PMN-PNN-PZT ceramics (PMN-PNN-PZT 세라믹스의 구조 및 유전특성)

  • Lee, Jong-Deok;Park, Sang-Man;Park, Gi-Yup
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.257-260
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    • 2003
  • In this study, the structural, dielectric and piezielectric properities of $xPb(Mg_{1/3}Nb_{2/3})O_3-(0.5-x)Pb(Ni_{1/3}Nb_{2/3})O_3-0.5Pb(Zr_{0.3}Ti_{0.7})O_3$ ceramics were investigated with the substitution of $PbMg_{1/3}Nb_{2/3}O_3$. The results showed that the substitution of the $PbMg_{1/3}Nb_{2/3}O_3$ was effective in increasing the dielectric constant and electromechanical coupling factor $(K_p)$. The dielectric constant, dielectric loss and Kp showed the highest values of 4293, 2.4%, 0.59 relatively, when the substitution of amount of $PbMg_{1/3}Nb_{2/3}O_3$ was 5 mol%.

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