• Korean Journal of Materials Research
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• v.9 no.1
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• pp.81-85
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• 1999

Polarization and strain induced by unipolar electric field (P\ulcorner, S\ulcorner), those induced by bipolar electric field (P, S) and remanent polarization (P\ulcorner) were investigated in 0.9Pb(Mg\ulcornerNb\ulcorner)O$_3$-$0.1PbTiO_3$relaxor ferroelectric ceramics in the temperature range of $-50^{\circ}C$~$90^{\circ}C$. From the temperature dependence of polarization and strain, the transition from predominantly paraelectric (electrostrictive) to partially ferroelectric (piezoelectric) is visualized. Under the given temperature, the P\ulcorner/P\ulcorner is always larger than the S\ulcorner/S\ulcorner and the difference between them becomes larger ass the temperature decrease. The S\ulcorner/P\ulcorner increases as the temperature decreased below phase transition temperature. It was suggested that these experimental results might be explained with a simple rigid ion model concentrating on BO\ulcorner octahedron.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.5
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• pp.417-421
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• 2006

In this study, in order to develop low temperature sintering piezoelectric ceramics for LTCC (Low-Temperature Cofired Ceramic) multilayer piezoelectric actuator, PMW-PMN-PZT ceramics using $0.2wt%\; Li_2CO_3$ and $0.25wt%\;CaCO_3$ as sintering aids were investigated according to the varation of PMW substution. Composition ceramics could be sintered at $900^{\circ}C$ by adding sintering aids. As the amount of PMW substitution increased, the crystal structure of PMW-PMN-PZT ceramics moved from tetragonal phase to rhombohedral phase gradually, and MPB(Morphotrophic Phase Boundary) region appeared at 2 mol% PMW substitution. At the sintering temperature of $900^{\circ}C$, the density, electromechanical coupling factor(kp), mechanical quality factor(Qm), dielectric constant(${\epsilon}r$), piezoelectric constant(d33) and Curie temperature(Tc) of 2 mol% PMW substituted PMW-PMN-PZT ceramics showed the optimal values of $7.88g/cm^3$, 0.58, 1002, 1264, 352 pC/N and $336^{\circ}C$, respectively, for LTCC multilayer piezoelectric actuator application.

• Journal of the Korean Ceramic Society
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• v.51 no.3
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• pp.218-223
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• 2014

The domain structures, dielectric properties, and phase transformation of (001)-oriented $Pb(Mg_{1/3}Nb_{2/3})O_3-x%PbTiO_3$ (PMN-x%PT) crystals for x=20, 30, 35, and 40 mole% have been investigated. PMN-20%PT consists of polar nano-domains (PND) which do not self-assemble into macro-domain plates. PMN-30%PT consists of PNDs which begin to self-assemble into colonies along preferred {110} planes. PMN-35PT consists of miniature polar domains on the nm scale. PMN-40%PT consists of {001} oriented lamella domains on the mm scale that have internal nano-scale heterogeneities. The dielectric properties of poled (001) PMN-x%PT single crystals have been measured for orientations both parallel and perpendicular to the [001] poling direction. The results of the temperature dependence of the dielectric constant and mesh scans for the 30%PT sample demonstrate that the initial monoclinic phase changes to single domain tetragonal phase and to cubic phase with increasing temperature.

• Journal of the Korean Ceramic Society
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• v.47 no.4
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• pp.333-337
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• 2010

Domain structure and polarization switching in (001)-oriented $Pb(Mg_{1/3}Nb_{2/3})O_3-x%PbTiO_3$ (PMN-x%PT) crystals for x=20 and 35at% have been investigated in-situ by scanning force microscope (SFM) in a piezoresponse mode under a step DC electrical voltage. In the initial annealed condition, polar nano domains (PND) and domain striations oriented along {110} were observed in x=20 and x=35, respectively. For x=20, domain switching occurs by heterogeneous nucleation, where nucleation is not confined in the vicinity of domain boundaries, but rather can occur throughout the crystal volume. However, for x=35, domain switching tends to be preferentially initiated near pre-existing twin boundaries. With increasing the applying voltage, the nuclei density increased and assembled into {110} striations, indicating a stress-accommodated domain growth process. At higher voltage, nucleation occurs heterogeneously throughout the crystal volume.

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.680-687
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• 2006

An overview is given to optimize the solid state processes toward phase pure and well-crystallized fine particulates of mixed oxides, serving as electroceramic materials in various genres. Elevation of the reactivity and preservation of stoichiometry of the starting mixture are of universal importance. Mechanical activation is versatile for these purposes, particularly when an oxygen atom as a hinge promotes formation of hetero-bridging bonds between dissimilar cationic species prior to calcination. Case studies carried out recently in the author's laboratory are displayed and compared for ferroelectric materials, i.e. $PbMg_{1/3}Nb_{2/3}O_3$ $xPbTiO_3$(PMN-PT), $(1-y)Pb(Zn_xMg{1-x})_{1/3}$ $yNb_{2/3}O_3$ (PZN-PMN), $BaBi_2Ta_2O_9$ (BBT), $Ba(Mg_{1/3}Ta_{2/3})O_3$ (BMT), and ferromagnetics, i.e. M-, Y-, and Z-phases of Ba-hexaferrites.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.66.1-66
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• 2000

• Korean Journal of Materials Research
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• v.12 no.2
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• pp.160-165
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• 2002

High-frequency dielectric and microwave absorbing properties have been investigated in ferroelectric materials (BaTiO$_3$(BT), (1-x)Pb$Mg_{\frac{1}{3}}Nb_{\frac{2}{3}}$)O$_3$-xPbTiO$_3$(PMN-PT), (1-x)Pb$Mg_{\frac{1}{3}}Nb_{\frac{2}{3}}$O$_3$-xPb(Zn_{\frac{1}{3}}Nb_{\frac{2}{3}}$)O$_3$(PMN-PZN) for the aim of thin microwave absorbers in the frequency range of mobile telecommunication. The specimenns are prepared by conventional ceramic processing and complex permittivity has been measured by transmission/reflection method. The ferroelectric materials show high dielectric constant and dielectric loss in the microwave range and their domiant loss mechanism is considered to be domain wall relaxation. The microwave absorbance of BT 0.9PMN-0.1PT, and 0.8PMN-0.2PZN specimen (determined at 2) are found to be 99.5% (at a thickness of 4.5 mm), 50% (2.5 mm), and 30% (2.5 mm), respectively. It is suggested that PMN-PT or PMN-PZN ferroelectrics are good candidate materials for the spacer of λ/4 absorber. The use of ferroelectric materials is effective in reducing the thickness of absorber with their advantage of high dielectric constant.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.2
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• pp.134-139
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• 2000

Ternary system of 40PMN-30PT-30PMW was prepared by using different reaction process. The PMN-PT was synthesized firstly, then it reacted to $PbWO_4$ as PbO and $WO_3$ sources. The dielectric constants were dependent on the density of sintered body and decreased with sintering temperature above $950^{\circ}C$. The highest dielectric constant was 24,000 in a sample sintered at $950^{\circ}C$ with the dielectric loss of 3 %. The temperature dependence of the dielectric constant were decreased with the increase of sintering temperature due to the appearance of double peak maxima. The lowest change in dielectric constant was -37-0 % from -55 to $125^{\circ}C$in a sample sintered at $1150^{\circ}C$ with dielectric constant of 9,900 at room temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.5-8
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• 1994

In this paper, Dielectric and strain properties of (1-x-y)PMN-yPT-xST Ceramics hale been investigated as a function of the amount of SrTiO$_3$(ST). The SrTiO$_3$ content is ranged from 0.01-0.05(wt%). As the amount of ST is increased, dielectric constant has a maximun value at 0.05 mol% composition. The Curie temperature is decreased linearly with increasing ST composition and Polarization properties have been investigated. Coercive field and remnant polarization has a maximum value at 0.01mo1% composiion.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.85-85
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• 1999

Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT)는 높은 유전율로 인해 강유전체 메모리 소자의 응용을 위한 연구가 되고 있으며 또한 전왜(electrostrictive)성을 갖고 있어 이력현상을 갖지 않음으로 최근 들어 미세전기기계소자(MEMS)로의 연구가 활발히 되고 있다. 본 연구에서는 MEMS 소자로서의 응용을 위해 저응력 SiNx가 형성된 Si 기판위에 Pt 전극 혹은 산화물 전극 SrRuO3를 갖는 PMN-PT 박막 캐패시터를 제조하였다. 박막 하부의 구조는 금속전극의 경우 Pt/Ti/LTO/SiNx/Si이고 산화물전극은 SrRuO3/Ru/SiNx/Si의 구조를 갖는다. PMN-PT 박막은 alkoxide를 기반으로 회전 coating 방법을 사용하여 박막 하부층의 변화를 주어서 성장시켰다. PMN-PT 용액의 합성은 분말합성법에서 사용하는 columbite 방법을 응용하여 상대적으로 반응정도가 낮은 Mg를 Nb와 우선 반응하여 Mg-Nb solution을 얻고 Pb-acetate 용액과 합성하여 PMN을 제조한 후 PT를 반응시켜서 제조하였다. PMN-PT 박막에서 동일한 공정조건 하에서 박막 하부층의 구조에 따라서 PMN-PT 박막의 조성이 A2B2O6의 조성을 가지는 파이로클러어상이 형성되거나 또는 ABO3인 페로브스카이트상이 형성되는 것을 관찰하였다. 금속 전극인 Pt를 하부전극으로 사용한 경우는 혼재상이 형성되어 패로브스카이드 PMN-PT를 얻기 위해 seed layer로서 PbTiO3를 사용하였으며 이러한 seed layer 위에 형성된 PMN-PT를 형성하는 경우 rutile 구조인 RuO2 위에 성장시킨 PMN-PT는 파이로클로어와 페로브스카이트의 혼재상이 얻어졌으나 pseudo-perovskite 구조인 SrRuO3 박막 위에 형성된 PMN-PT 박막에서는 페로브스카이트가 주된 상으로 얻어졌다. 즉 하부층(전극 또는 seed layer)으로 perovskite 구조를 갖는 박막을 형성하게 되면 페로브스카이트를 갖는 PMN-PT 박막을 얻을 수 있었다. 전기적인 특성은 상부전극으로 Pt를 사용하여 HP 4194A로 측정을 하였다. PT seed layer를 포함한 PMN-PT 박막은 유전상수 1086과 유전손실 2.75%을 가졌다.