• Transactions on Electrical and Electronic Materials
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• v.4 no.6
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• pp.17-20
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• 2003

This paper describes the effect of halogenic gettering during oxide passivation of commercial solar cell with the $N^{+}$-P-$N^{+}$ structure. In order to study the effect of halogenic gettering on $N^{+}$-P-$N^{+}$ structure mono-crystalline silicon solar cell, we performed conventional POCl$_3$ diffusion for emitter formation and oxide passivation in the presence of HCl vapors. The $N^{+}$-P-$N^{+}$ structure based silicon solar cells were found to have higher short circuit current and minority carrier lifetime. Their performance was also found to be superior than the conventional $N^{+}$-P-$N^{+}$ structure based mono-crystalline silicon solar cell. The cell parameters of the $n^{+}$-p-$p^{+}$ and $n^{+}$-p-$n^{+}$ structure based cells, passivated by HCl assisted oxidation were measured. The improvement in $I_{sc}$ was attributed to the effect of the increased diffusion length of minority carriers, which came from the halogenic gettering effect during the growth of passivating oxide. The presence of chlorine caused gettering of the cells by removing the heavy metals, if any. The other advantage of the presence of chlorine was the removal of the diffusion induced (in oxygen environment) stacking faults and line defects from the surfaces of the silicon wafers. All these effects caused the improvement of the minority carrier lifetime, which in-turn helped to improve the quality of the solar cells.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.99-104
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• 2007

Porous silicon exhibiting dual optical properties, both $Febry-P{\acute{e}}rot$ fringe (optical reflectivity) and photoluminescence had been developed and used as chemical sensors. Porous silicon samples were prepared by an electrochemical etch of p-type silicon wafer (boron-doped, <100> orientation, resistivity ; $1-10{\Omega}cm$). Two different types of porous silicon, fresh porous silicon (Si-H terminated) and oxidized porous silicon (Si-OH terminated)by the thermal oxidation, were prepared. Then the samples were exposed to the vapor of various organics, such as methanol, acetone, hexane, and toluene. Both reflectivity and photoluminescence were simultaneously measured under the exposure of organic vapors for sensing VOC's. These surface-modified samples showed unique respond in both reflectivity and photoluminescence with various organic vapors. While polar molecules exhibit greater quenching photoluminescence, molecules having higher vapor pressure show greater red shift for reflectivity.

• Journal of Integrative Natural Science
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• v.6 no.3
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• pp.170-175
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• 2013

Silicon nanowires were detached and obtained from silicon nanowire arrays on silicon substrate using a ultrasono-method. Silicon nanowire arrays on silicon substrate were prepared with an electroless metal assisted etching of p-type silicon. The etching solution was an aqueous HF solution containing silver nitrate. SEM observation shows that well-aligned nanowire arrays perpendicular to the surface of the silicon substrate were produced. After sonication of silicon nanowire array, an individual silicon nanowire was confirmed by FESEM. Optical characteristics of SiNWs were measured by FT-IR spectroscopy. The surface of SiNWs are terminated with hydrogen.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.3
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• pp.119-123
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• 2013

Most of the world's solar cells in photovoltaic industry are currently fabricated using crystalline silicon. Czochralski-grown silicon crystals are more expensive than multicrystalline silicon crystals. The future of solar-grade Czochralski-grown silicon crystals crucially depends on whether it is usable for the mass-production of high-efficiency solar cells or not. It is generally believed that the main obstacle for making solar-grade Czochralski-grown silicon crystals a perfect high-efficiency solar cell material is presently light-induced degradation problem. In this work, the substitution of boron with gallium in p-type silicon single crystal is studied as an alternative to reduce the extent of lifetime degradation. The diamond-wire sawing technology is employed to slice the silicon ingot. In this paper, the quality of the diamond wire-sawn gallium-doped silicon wafers is studied from the chemical, electrical and structural points of view. It is found that the characteristic of gallium-doped silicon wafers including texturing behavior and surface metallic impurities are same as that of conventional boron-doped Czochralski crystals.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.199-199
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• 2010

A back-gated MOSFET on silicon-on-insulator (SOI) substrate for pH sensor was investigated. We used concentrations of pH solution from 6 to 9. The fabricated back-gated MOSFET has current difference and threshold voltage shift by pH concentrations. Therefore, It can be used to simplification of conventional pH sensor.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.3
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• pp.370-376
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• 2012

In this work, design considerations for high-performance silicon photodetector are thoroughly investi- gated. Besides the critical dimensions of device, guidelines for process architecture are suggested. Abiding by those criteria for improving both direct-current (DC) and alternating-current (AC) perfor- mances, a high-speed low-operation power silicon photodetector based on p-i-n structure for optical interconnect has been designed by device simulation. An $f_{-3dB}$ of 80 GHz at an operating voltage of 1 V was obtained.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.2
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• pp.170-177
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• 1992

Contact resistance and contact leakage current of the Al/TiSiS12T/Si system are investigated for NS0+T and PS0+T junctions. SALICIDE (Self Aligned Silicide) process was used to make the Al/TiSiS12T/Si system. Titanium disilicide is one of the most common silicides because of its thermal stability, ability to form selective formation and low resistivity. In this paper, RTA temperature effect and Junction implant dose effect were evaluated to characterize contact resistance and contact leakage current. The TiSiS12T contact resistance to NS0+T silicon is lower than that to PS0+T silicon, and TiSiS12T of contact leakage current to NS0+T silicon is lower than that to PS0+T silicon. Contact resistance and contact leakage current of the Al/TiSiS12T/Si system by this method were possible for VLSI application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.283-288
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• 2004

We have fabricated MIM capacitors for MMIC applications, with capacitances as high as 600pF/$\textrm{mm}^2$ and excellent electrical properties of the insulator layer. Silicon nitride thin film is the desirable material for MMIC capacitor fabrication. Standard MIM capacitance in MMIC is 300pF/$\textrm{mm}^2$ with an insulator layer thickness of more than 2000$\AA$. However, capacitors with thin insulator layers have breakdown voltages as low as 20V. We have deposited insulator layers by PECVD in our MIM structure with an air bridge between the top metal and the contact pad. The PECVD process was optimized for fabricating the desired capacitors to be used in MMIC. Silicon nitride(Si$_{x}$N$_{y}$) thin films of about 1000$\AA$ thick show capacitances of about 600pF/$\textrm{mm}^2$, and breakdown voltages above 70V at 100nA.A.A.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.59-60
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• 2006

The slurry stability and removal rate during recycling of slurry in silicon wafer polishing was studied. Average abrasive size of slurry was not changed with recycling time, however, large particles appeared as recycling time increased. Large particles were related foreign substances from pad or abraded silicon flakes during polishing. The removal rate as well as pH of slurry was decreased as recycling time increased. It suggests that the consumption of OH ions during recycling is the main cause of decrease of removal rate. Therefore, it is important to control pH of slurry to obtain optimum removal rate during polishing.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.7
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• pp.149-155
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• 1996

A new technique wasdeveloped which obtains selectively the htick fully recessed oxidized porous silicon layer (OPSL) with good dielectric property. The porous silicon layer was ocnverted to thick fully recessed oxide (FRO) with 3-step (1${\mu}$m, 1.5${\mu}$m, 1.8${\mu}$m) by multi-step thermal oxidation (after 400$^{\circ}$C, 1 hour by dry oxidation, 700$^{\circ}$C, 1 hour and then 1100$^{\circ}$C, 1 hour by wet oxidation). The breakdwon field of the FRO was about 2.5MV/cm and the leakage current was several pA ~ 100 pA in the range of 0 of 90 pF. The progress of oxidation of a porous silicon layer was studied by examining the infrared abosrption spectra. The refractive index (1.51) of the fRO, which was measured by ellipsometer, was comparable to that of the thermally grown silicon dioxide (1.46). The etching rate (1600${\AA}$/min) of the FRO was also almost equal to that of the thermal oxide.