• Title/Summary/Keyword: $P^+$ region

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The Characteristics of pH Variations and Lead transport during Electrokinetic Remediation of soil Contaminated by Heavy Metal (중금속 오염토의 Electrokinetic 정화 처리시 pH 발현과 납 제거의 전극 간 특성)

  • 한상재;김수삼
    • Journal of Soil and Groundwater Environment
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    • v.6 no.4
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    • pp.13-23
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    • 2001
  • In this study, the characteristics of pH variations and contaminant distribution in soil are investigated during electrokinetic treatment for the purpose of restoring contaminated soil with heavy metal. For these objects, laboratory test for the kaolin contaminated by lead was performed. During electrokinetic treatment, lead was transported from anode to cathode. And 75% of lead removed within 80% region of the specimen. Most lead, however, that transported from anode to cathode precipitated in the vicinity of cathode compartment, thus the amount of lead removed by electroosmosis was little. Electrokinetic treatment satisfied regulation criteria of Korean Soil Environment Conservation Law within almost region of the specimen. But enhancement methods can be regarded as inevitable requisite for the cathode region.

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Cloning and Immunological Characterization of the 84-kDa Heat Shock Protein, ClpL, in Streptococcus pneumoniae (84-kDa의 폐렴구균 열충격단백질 ClpL의 Cloning 및 면역특성에 관한 연구)

  • 권혁영;김용환;최혜진;박연진;표석능;이동권
    • Biomolecules & Therapeutics
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    • v.9 no.2
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    • pp.79-87
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    • 2001
  • Heat shock proteins serve as chaperone by preventing the aggregation of denatured proteins and promote survival of pathogens in harsh environments. In this study, heat shock gene encoding a 84-kDa (p84) protein, which is one of the three major heat shock proteins in S. pneumoniae, was cloned and characterized. PCR with a forward primer derived from N-terminal amino acid sequence of the p84 and a reverse primer derived from the conserved second ATP-binding region of Clp family was used for amplification of the gene encoding the p84 and subsequently the PCR product was used for sequence determination. Sequence analysis of the p84 gene demonstrated that it is a member of ClpL. The deduced amino acid sequence of pneumococcal ClpL shows homology with other members of the Clp family, and particularly, even in variable leader region, with bovine Clp-like protein and L. lactis ClpL. S. pneumoniae clpL is the smallest clop member (701 amono acids) containing the two conserved ATP-binding regions, and hydrophilic N-terminal variable region of pneu-mococcal Clp ATPase is much shorter than any known Clp ATPases. Histidine tagged ClpL was overexpressed and purified from E. coli. Immunoblot analysis employing antisera raised against pneumococcus p84 demonstrated no cross-reactivity with Clp analog in Eschericha coli, Staphylococcus aureus and human HeLa cells. Preimmunization of mice with ClpL extended mice life partially but did not protect them from death.

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Protein Disorder/Order Region Classification Using EPs-TFP Mining Method (EPs-TFP 마이닝 기법을 이용한 단백질 Disorder/Order 지역 분류)

  • Lee, Heon Gyu;Shin, Yong Ho
    • Journal of Korea Society of Industrial Information Systems
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    • v.17 no.6
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    • pp.59-72
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    • 2012
  • Since a protein displays its specific functions when disorder region of protein sequence transits to order region with provoking a biological reaction, the separation of disorder region and order region from the sequence data is urgently necessary for predicting three dimensional structure and characteristics of the protein. To classify the disorder and order region efficiently, this paper proposes a classification/prediction method using sequence data while acquiring a non-biased result on a specific characteristics of protein and improving the classification speed. The emerging patterns based EPs-TFP methods utilizes only the essential emerging pattern in which the redundant emerging patterns are removed. This classification method finds the sequence patterns of disorder region, such sequence patterns are frequently shown in disorder region but relatively not frequently in the order region. We expand P-tree and T-tree conceptualized TFP method into a classification/prediction method in order to improve the performance of the proposed algorithm. We used Disprot 4.9 and CASP 7 data to evaluate EPs-TFP technique, the results of order/disorder classification show sensitivity 73.6, specificity 69.51 and accuracy 74.2.

Characterization of Reverse Leakage Current Mechanism of Shallow Junction and Extraction of Silicidation Induced Schottky Contact Area for 0.15 ${\mu}{\textrm}{m}$ CMOS Technology Utilizing Cobalt Silicide (코발트 실리사이드 접합을 사용하는 0.15${\mu}{\textrm}{m}$ CMOS Technology에서 얕은 접합에서의 누설 전류 특성 분석과 실리사이드에 의해 발생된 Schottky Contact 면적의 유도)

  • 강근구;장명준;이원창;이희덕
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.10
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    • pp.25-34
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    • 2002
  • In this paper, silicidation induced Schottky contact area was obtained using the current voltage(I-V) characteristics of shallow cobalt silicided p+-n and n+-p junctions. In reverse bias region, Poole-Frenkel barrier lowering influenced predominantly the reverse leakage current, masking thereby the effect of Schottky contact formation. However, Schottky contact was conclusively shown to be the root cause of the modified I-V behavior of n+-p junction in the forward bias region. The increase of leakage current in silicided n+-p diodes is consistent with the formation of Schottky contact via cobalt slicide penetrating into the p-substrate or near to the junction area and generating trap sites. The increase of reverse leakage current is proven to be attributed to the penetration of silicide into depletion region in case of the perimeter intensive n+-p junction. In case of the area intensive n+-p junction, the silicide penetrated near to the depletion region. There is no formation of Schottky contact in case of the p+-n junction where no increase in the leakage current is monitored. The Schottky contact amounting to less than 0.01% of the total junction was extracted by simultaneous characterization of forward and reverse characteristics of silicided n+-p diode.

Expression in Eschepichia coli of a Cloned Bacillus thuringiensis subsp. kurstaki HDI In-secticidal Protein Gene. (클로닝된 Bacillus thuringiensis subsp. kurstaki HDI 살충성 단백질 유전자의 대장균에서의 발현)

  • 황성희;차성철;유관희;이형환
    • Microbiology and Biotechnology Letters
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    • v.26 no.6
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    • pp.497-506
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    • 1998
  • The expression in Escherichia coli of a cloned insecticidal protein (ICP) gene from Bacillus thuringiensis var. kurstaki HD1 in pHLN1-80 (+) and pHLN2-80(-) plasmids was investigated through deletions in promoters, transcription start point, and termination region. Six recombinant plasmids were constructed in an attempt to analyze the overexpression of the ICP in relations to its gene structure. The amounts of ICP produced from the recombinants were measured by SDS-PAGE and confirmed by Western blot analysis. One clone was not overexpressed which having only -80 bp (contained BtI promoter) part of the ICP gene promoter (without Plac promoter), the right-oriented ICP gene and the termination region. Removal of 350 bp from upstream region of the Plac of the clone pHLN2-80 (-) resulted in overexpression of the ICP. One clone was not overexpressed in which the clone consisted of -72 bp part of the ICP promoter without the transcription start point and the transcriptional termination region, and having the right-oriented ICP gene sequence. One clone consisting of the inverted ICP gene sequence, the -72 bp ICP gene promoter, and without the termination region caused overexpression. One clone which consisted of the inverted ICP gene, the -72 bp ICP gene promoter and the termination sequence was overexpressed. These results indicated that the Plac promoter, transcription termination region, the inverted ICP gene insertion, and the -80 bp or -72 bp part of the ICP gene promoters were concerned in the overexpression of the ICP gene in the recombinant plasmid, and also the overexpression mechanism might result from the disruption of the transcription-suppressing regions in the promoter regions.

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A Study on Characteristic Improvement of IGBT with P-floating Layer

  • Kyoung, Sinsu;Jung, Eun Sik;Kang, Ey Goo
    • Journal of Electrical Engineering and Technology
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    • v.9 no.2
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    • pp.686-694
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    • 2014
  • A power semiconductor device, usually used as a switch or rectifier, is very significant in the modern power industry. The power semiconductor, in terms of its physical properties, requires a high breakdown voltage to turn off, a low on-state resistance to reduce static loss, and a fast switching speed to reduce dynamic loss. Among those parameters, the breakdown voltage and on-state resistance rely on the doping concentration of the drift region in the power semiconductor, this effect can be more important for a higher voltage device. Although the low doping concentration in the drift region increases the breakdown voltage, the on-state resistance that is increased along with it makes the static loss characteristic deteriorate. On the other hand, although the high doping concentration in the drift region reduces on-state resistance, the breakdown voltage is decreased, which limits the scope of its applications. This addresses the fact that breakdown voltage and on-state resistance are in a trade-off relationship with a parameter of the doping concentration in the drift region. Such a trade-off relationship is a hindrance to the development of power semiconductor devices that have idealistic characteristics. In this study, a novel structure is proposed for the Insulated Gate Bipolar Transistor (IGBT) device that uses conductivity modulation, which makes it possible to increase the breakdown voltage without changing the on-state resistance through use of a P-floating layer. More specifically in the proposed IGBT structure, a P-floating layer was inserted into the drift region, which results in an alleviation of the trade-off relationship between the on-state resistance and the breakdown voltage. The increase of breakdown voltage in the proposed IGBT structure has been analyzed both theoretically and through simulations, and it is verified through measurement of actual samples.

Overlapping Region of p53/Wrap53 Transcripts: Mutational Analysis and Sequence Similarity with microRNA-4732-5p

  • Pouladi, Nasser;Kouhsari, Shideh Montasser;Feizi, Mohammadali Hosseinpour;Gavgani, Reyhaneh Ravanbakhsh;Azarfam, Parvin
    • Asian Pacific Journal of Cancer Prevention
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    • v.14 no.6
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    • pp.3503-3507
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    • 2013
  • Background: Although the majority of investigations concerned with TP53 and its protein have focused on coding regions, recently a set of studies highlighted significant roles of regulatory elements located in p53 mRNA, especially 5'UTR. The wrap53${\alpha}$ transcript is one of those that acts as a natural antisense agent, forming RNA-RNA hybrids with p53 mRNA and protecting it from degradation. Materials and Methods: In this study, we focused on the mutation status of exon $1{\alpha}$ of the WRAP53 gene (according to exon 1 of p53) in 160 breast tumor tissue samples and conducted a bioinformatics search for probable miRNA binding site in the p53/wrap53 overlapping region. Mutations were detected, using single stranded conformation polymorphism (SSCP) and sequencing. We applied the miRBase database for prediction of miRNAs which target overlapping region of p53/wrap53 transcripts. Results: Our results showed all samples to have wild type alleles in exon 1 of TP53 gene. We could detect a novel and unreported intronic mutation (IVS1+56, G>C) outside overlapping regions of p53/wrap53 genes in breast cancer tissues and also predict the presence of a binding site for miR-4732-5p in the 5'UTR of Wrap53 mRNA. Conclusions: From our findings we propose designing further studies focused on overexpression of miRNA-4732-5p and introducing different mutations in the overlapping region of wrap53 and p53 genes in order to study their effects on p53 and its ${\Delta}N$ isoform (${\Delta}$40p53) expression. The results may provide new pieces in the p53 targeting puzzle for cancer therapy.

A Study of the Relationship Analysis of Power Conversion and Changed Capacitance in the Depletion Region of Silicon Solar Cell

  • Kim, Do-Kyeong;Oh, Yeong-Jun;Kim, Sang-Hyun;Hong, Kyeong-Jin;Jung, Haeng-Yeon;Kim, Hoy-Jin;Jeon, Myeong-Seok
    • Transactions on Electrical and Electronic Materials
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    • v.14 no.4
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    • pp.177-181
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    • 2013
  • In this paper, silicon solar cells are analyzed regarding power conversion efficiency by changed capacitance in the depletion region. For the capacitance control in the depletion region of silicon solar cell was applied for 10, 20, 40, 80, 160 and 320 Hz frequency band character and alternating current(AC) voltage with square wave of 0.2~1.4 V. Academically, symmetry formation of positive and negative change of the p-n junction is similar to the physical effect of capacitance. According to the experiment result, because input of square wave with alternating current(AC) voltage could be observed to changed capacitance effect by indirectly method through non-linear power conversion (Voltage-Current) output. In addition, when input alternating current(AC) voltage in the silicon solar cell, changed capacitance of depletion region with the forward bias condition and reverse bias condition gave a direct effect to the charge mobility.

Plasma Flows and Bubble Properties Associated with the Magnetic Dipolarization in Space Close to Geosynchronous Orbit

  • Lee, Ji-Hee;Lee, Dae-Young;Park, Mi-Young;Lee, Eun-Hee
    • Journal of Astronomy and Space Sciences
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    • v.30 no.2
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    • pp.95-100
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    • 2013
  • In this paper we examine a total of 16 dipolarization events that were observed by THEMIS spacecraft in space close to geosynchronous orbit, r < ${\sim}7\;R_E$. For the identified events, we examine the characteristics of the plasma flows and associated bubbles as defined based on $pV^{5/3}$, where p is the plasma pressure and V the volume of unit magnetic flux. First, we find that the flow speed in the near-geosynchronous region is very low, mostly within a few tens of km/s, except for a very few events for which the flow can rise up to ~200 km/s but only very near the dipolarization onset time. Second, the bubble parameter, $pV^{5/3}$, decreases by a much smaller factor after the dipolarization onset than for the events in the farther out tail region. We suggest that the magnetic dipolarization in the near-geosynchronous region generates or is associated with only very weak plasma bubbles. Such bubbles in the near-geosynchronous region would penetrate earthward only by a small distance before they stop at an equilibrium position or drift around the Earth.

Three-dimensional evaluation of maxillary anterior alveolar bone for optimal placement of miniscrew implants

  • Choi, Jin Hwan;Yu, Hyung Seog;Lee, Kee Joon;Park, Young Chel
    • The korean journal of orthodontics
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    • v.44 no.2
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    • pp.54-61
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    • 2014
  • Objective: This study aimed to propose clinical guidelines for placing miniscrew implants using the results obtained from 3-dimensional analysis of maxillary anterior interdental alveolar bone by cone-beam computed tomography (CBCT). Methods: By using CBCT data from 52 adult patients (17 men and 35 women; mean age, 27.9 years), alveolar bone were measured in 3 regions: between the maxillary central incisors (U1-U1), between the maxillary central incisor and maxillary lateral incisor (U1-U2), and between the maxillary lateral incisor and the canine (U2-U3). Cortical bone thickness, labio-palatal thickness, and interdental root distance were measured at 4 mm, 6 mm, and 8 mm apical to the interdental cementoenamel junction (ICEJ). Results: The cortical bone thickness significantly increased from the U1-U1 region to the U2-U3 region (p < 0.05). The labio-palatal thickness was significantly less in the U1-U1 region (p < 0.05), and the interdental root distance was significantly less in the U1-U2 region (p < 0.05). Conclusions: The results of this study suggest that the interdental root regions U2-U3 and U1-U1 are the best sites for placing miniscrew implants into maxillary anterior alveolar bone.