• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.24 no.5
• /
• pp.202-206
• /
• 2014

In order to investigate the photoluminescence (PL) properties of $V_2O_5$ films, amorphous and crystalline films were prepared by using RF sputtering system, and the PL spectra of the films were measured at the temperatures ranging from 300 K to 10 K. In the amorphous $V_2O_5$ film grown at room temperature, a PL peak centered at ~505 nm was only observed, and in the crystalline $V_2O_5$ film, two peaks centered at ~505 nm and ~695 nm, which is known to correspond to oxygen defects, were revealed. The position of PL peak centered at 505 nm for both the amorphous and crystalline $V_2O_5$ films showed a strong dependence on temperature, and the positions were 2.45 eV at 300 K and 2.35 eV at 10 K, respectively. The PL at 505 nm was due to the band energy transition in $V_2O_5$, and also, the reduction of the peak position energy with decreasing temperature was caused by a decrement of the lattice dilatation effect with reducing electron-phonon interaction.

• Journal of the Korean Applied Science and Technology
• /
• v.35 no.1
• /
• pp.163-172
• /
• 2018

In this study, selective catalytic reductions (SCR) of NO commercial catalysts were used to investigate the effect of ammonia gasification from urea solution. The effects of catalytic chemical composition on the reaction temperature and space velocity were studied. $V_2O_5/TiO_2$ catalysts, which are widely used as SCR catalysts for removal of nitrogen oxides, have better ammonia formation compare to $TiO_2$ and $WO_3-V_2O_5/TiO_2$ catalysts. The $TiO_2$ catalyst not supporting the active metal was not affected by the space velocity as compared with the catalyst supporting $V_2O_5$ or $WO_3-V_2O_5$. The active metal supported catalysts decreased in the ammonia formation as the space velocity increased.

• Journal of Environmental Science International
• /
• v.15 no.4
• /
• pp.333-340
• /
• 2006

A (5 wt.%)Mn-(1 wt.%)$V_{2}O_{5}/TiO_{2}$ catalyst were prepared by co-precipitation method and used for low-temperature selective catalytic reduction (SCR) of $NO_x$ with ammonia in the presence of oxygen. The properties of the catalysts were studied by X-ray diffraction (XRD), temperature programmed reduction (TPR) and scanning electron microscope-energy dispersive X-ray spectroscopy (SEM-EDS). The experimental results showed that (5 wt.%)Mn-(1 wt.%)$V_{2}O_{5}/TiO_{2}$ catalyst yielded 81% NO conversion at temperature as low as $150^{\circ}C$ and a space velocity of $2,400\;h^{-1}$. Crystalline phase of $Mn_{2}O_3$ was present at ${\ge}\;15%$ Mn on $V_{2}O_{5}/TiO_{2}$. XRD confirmed the presence of manganese oxide ($Mn_{2}O_{3}$) at $2{\theta}=32.978^{\circ}(222)$. The XRD patterns presented of (5 wt.%)Mn-(1 wt.%)$V_{2}O_{5}/TiO_{2}$ did not show intense or sharp peaks for manganese oxides and vanadia oxides. The TPR profiles of (5 wt.%)Mn-(1 wt.%)$V_{2}O_{5}/TiO_{2}$ catalyst showed main reduction peat of a maximum at $595^{\circ}C$.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.21 no.10
• /
• pp.66-72
• /
• 2007

This paper describes the characteristics of power loss and leakage currents flowing through new and used 18[kV] zinc oxide(ZnO) surge arrester under the mixed DC and AC voltages. The mixed DC and AC voltage generator of 50[kV] peak was designed and fabricated. The I-V curves of ZnO surge arrester were measured as a function of the voltage ratio K. The I-V curves under the mixed DC and AC voltages lay between the pure DC and AC characteristics, and the cross-over phenomenon in both I-V curves and R-V curves was observed at the low current region. As a result, the increase of DC component in the mixed voltages causes the increase of resistive component of total leakage current of ZnO surge arrester. Also, in the case of same applied voltage, the leakage current flowing through the used ZnO surge arrester was higher than that of the new ZnO surge arrester.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.345-345
• /
• 2011

MgO는 암염구조를 가진 전형적인 이온 결합성 화합물로서 7.8eV의 띠틈을 갖고 흡습성이 강하다. 면 방전 구조 PDP에서 MgO 보호막은 면 방전으로 인한 유전층의 식각을 보호하고 2차 전자 방출을 통해 방전 전압을 낮추는 역할을 한다. 하지만 MgO 보호막은 증착시 흡수된 수분이 제거되어야 하고, 방전 특성 개선 및 방전 효율 향상을 위해 가공 처리에 관한 연구가 진행 되어야 한다. 본 연구는 MgO 보호막의 전자적 특성의 변화를 알아보기 위해 $O_2$ 분위기에서 전자빔 증착법을 이용해 MgO Powder를 사용하여 시료를 제작하였다. 표면에 흡착된 수분제거로 인한 특성 변화를 알아보기 위해 진공 챔버내에서 시료를 $500^{\circ}C{\sim}550^{\circ}C$의 열처리를 실시한 후 XPS(X-ray Photoelectron Spectroscopy), REELS(Reflection Electron Energy Loss Spectroscopy), UPS(Ultraviolet photoelectron Spectroscopy)를 이용하여 전자적 특성을 연구하였다. XPS 측정결과 시료의 열처리를 통해 C1s spectrum의 O-C=O(289eV) binding energy가 없어져 박막에 흡착된 불순물이 제거 되었으며 O1s spectrum에서 Hydroxides가 감소하고 530.0eV의 MgO 결합에너지쪽으로 커짐으로써 박막의 구조를 확인할 수 있었다. 그리고 $O^2$ 분위기에서 성장시킨 MgO 박막 기판을 열처리 후 REELS를 이용해 띠틈을 얻어보면 Ep=500eV에서 띠틈이 6.77eV, Ep=1500eV에서 띠틈이 7.33eV로 각각 측정되었다. Ep=500eV의 REELS 스펙트럼으로부터 산소 결함에 의한 표면 F Center는 4.22eV로 확인되었다.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.57 no.6
• /
• pp.1012-1016
• /
• 2008

[ $TiO_2-V_2O_5$ ] sol was fabricated using sol-gel method and $TiO_2-V_2O_5$ thin films were fabricated using dip-coating method. $V_2O_5$ sol was added 0.01mole, 0.03mole, 0.05mole into $TiO_2$ sol. As a results of crystalline properties, $V_2O_5$ peaks were not found in spite of $V_2O_5$ additive. Thickness of thin films increased $0.1{\sim}0.25{\mu}m$ every a dipping. Capacitance of thin films increased with increasing heat treatment temperature and it increased largest at $700^{\circ}C$. Capacitance of thin films decreased with increasing $V_2O_5$ additive and it increased largest at 0.01mole. Because adsorption time and desorption time of thin films was about 2 minutes 40 seconds and about 3 minutes 40 seconds respectively, adsorption time was faster about 1 minutes than desorption time.

• Korean Journal of Crystallography
• /
• v.15 no.1
• /
• pp.35-39
• /
• 2004

Two new nickel vanadium borophosphate cluster compounds, $(NH_4)_{10}[Ni(H_2O)_5]_4[V_2P_2BO_{12}]_6{\cdot}nH_2O$ (1) and $(NH_4)_{3.5}(C_3H_{12}N_2)_{3.5}[Ni(H_2O)_6]_{1.25}{[Ni(H_2O)_5]_2[V_2P_2BO_{12}]_6{\cdot}nH_2O$ (2) have been synthesized and structurally characterized. Inter-diffusion methods were employed to prepare the compounds. The cluster anion $[(NH_4)\;{\supset}\;V_2P_2BO_{12}]_6$ is used as a building unit in the synthesis of new compounds containing $Ni(H_2O){^{2+}_5}$ in the presence of pyrazine and 1,3-diaminopropane. Compounds contain isolated cluster anions with general composition ${[Ni(H_2O)_5]_n[(NH_4)\;{\supset}\;V_2P_2BO_{12}]_6}^{-(17-2n)}$ (n = 2, 4). Crystal data: $(NH_4)_{10}[Ni(H_2O)_5]_4[V_2P_2BO_{12}]_6{\cdot}nH_2O$, monoclinic, space group C2/m (no. 12), a = 27.538(2) ${\AA}$, b = 20.366(2) ${\AA}$, c = 11.9614(9) ${\AA}$, ${\beta}$ = 112.131(1)$^{\circ}$, Z = 8; $(NH_4)_{3.5}(C_3H_{12}N_2)_b[Ni(H_2O)_6]_{3.5}{[Ni(H_2O)_5]_2[V_2P_2BO_{12}]_6{\cdot}nH_2O$, triclinic, space group P-1 (no. 2), a = 17.7668(9) ${\AA}$, b = 17.881(1) ${\AA}$, c = 20.668(1) ${\AA}$, ${\alpha}$ = 86.729(1)$^{\circ}$, ${\beta}$ \ 65.77(1)$^{\circ}$, ${\gamma}$ = 80.388(1)$^{\circ}$, Z = 2.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.552-556
• /
• 2000

The crystallization behavior and dc Conductivities of CuO-Nb$_2$O$_{5}$ -V$_2$O$_{5}$ glasses prepared by quenching on the copper plate were investigated. The conductivities of the glasses were range from 10$^{-4}$ s.$cm^{-1}$ / at room temperature, but the conductivities of the glass-ceramics were 10$^{-3}$ s.$cm^{-1}$ / increased by 10$^1$ order. The linear relationship between In($\sigma$T) and T$^{-1}$ suggested that the electrical conduction in the present glass system would be due to a small polaron hopping mechanism. The value of activation energy of glass-ceramics heat-treated at 30$0^{\circ}C$ for 12hrs was found to be 0.leV

• Korean Journal of Materials Research
• /
• v.10 no.12
• /
• pp.807-811
• /
• 2000

CeO$_2$ and SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin films for MFISFET (Metal-ferroelectric-insulator-semiconductor-field effect transistor) were deposited by r.f. sputtering and pulsed laser ablation method, respectively. The effects of sputtering gas ratio(Ar:O$_2$) during deposition for CeO$_2$ films were investigated. The CeO$_2$ thin films deposited on Si(100) substrate at $600^{\circ}C$ exhibited (200) preferred orientation. The preferred orientation, Brain size and surface roughness of films decreased with increasing oxygen to argon gas ratio. The films deposited under the condition of Ar:O$_2$= 1 : 1 showed the best C- V characteristics. The leakage current of films showed the order of 10$^{-7}$ ~10$^{-8}$ A at 100kV/cm. The SBT thin films on CeO$_2$/Si substrate showed dense microstructure of polycrystalline phase. From the C-V characteristics of MFIS structure with SBT film annealed at 80$0^{\circ}C$, the memory window width was 0.9V at 5V The leakage current density of Pt/SBT/CeO$_2$/Si structure annealed at 80$0^{\circ}C$ was 4$\times$10$^{-7}$ /$\textrm{cm}^2$ at 5V.

• Electrical & Electronic Materials
• /
• v.6 no.3
• /
• pp.248-254
• /
• 1993

Ca(Ti, V)O$_{3}$의 감습특성에 대하여 조사하였다. 시편의 임피던스는 V$_{2}$O$_{5}$의 치환량이 증가함에 따라 감소하며 1mol% V$_{2}$O$_{5}$를 치환한 시편이 가장 우수한 감도를 나타내었다. 전극물질은 감도에 영향을 미치며 Pt가 가장 적합하였다. 히스테리시스 현상은 거의 나타나지 않으며 감도는 분위기 온도 및 열처리에 안정하였다.