• Journal of the Korean Electrochemical Society
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• v.11 no.3
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• pp.135-140
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• 2008

An electrochemical generation of ozonized water was investigated by using ${\beta}-PbO_2$ as an anode and tap water as an anolyte. According to the potentiometric ozone detection which utilizes potential differences arisen from a chemical reaction of ozone and iodide, increasing tendency of ozone concentration on electrolysis time could be observed to show the maximum value of 8 ppm at an electrolysis time of 10 min. Ozone could be generated promptly even at an electrolysis time of 10 sec., suggesting great advantages of this electrochemical process in terms of simplicity and readiness that might be applied directly to practical uses including medical and/ or food industries. Influences of electrolysis on the properties and surface conditions of a $PbO_2$ electrode were also discussed from the results of cyclic voltammetry, scanning electron microscope, and X-ray diffractometer.

• CELLMED
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• v.6 no.3
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• pp.19.1-19.3
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• 2016

Jindo Ssitgimgut has been known as a funeral ritual for a long time in Korea. However, there is no study for music therapy on anxiety disorder. The aims of this study were to argue that Oral sound Daseureum of Jindo Ssitgimgut may have meaningful effect on anxiety disorder. Jindo Ssitgimgut is literally a cleansing soul. Jindo Ssitgimgut is designated as the Intangible Cultural Property No. 2 by the Korean government. Jindo Ssitgimgut is transmitted from generation to generation, not the descent of God. So, the accent is on art and one's sincere sympathy. So, with careful listening Youtube, this music Daseureum exhibits an exquisite balance between the human voice and the sounds do the instruments. The author think a good combination of his voice, Jing (Korean gong), and Ajaeng (Korean cello) can help with anxiety disorder.

• Journal of the Korean Ceramic Society
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• v.35 no.6
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• pp.551-558
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• 1998

Detection of microcrack in {{{{ {Al }_{2 } {O }_{3 } }} ceramics were studided by AE(acoustic emission) technique with 4-point bending test in order to evaluate the fracture process and formation of microcrack. Fully-dense alu-mina ceramics having a different grain size were fabricated by varing the hot-pressing temperature. The grain size of alumina increased with increasing the hot-pressing temperature whereas the bending strength decreasd. The microcracks were observed by SEM and TEM. The generation of AE event increased with increasing the applied load and many AE event was generated at maximum applied load. Alumina with smaller grain size shows the generation of many AE event resulting in an increase of microcrack formation. An intergranular fracture is predominantly observed in fine-grained alumina whereas intragranular fracture occurs predominantly in coarse-grained alumina,. Analysis of micorstructure and AE prove that primary mi-crocracks occur within grain-boundaries of alumina. The larger microcracking were formed by the growth and/or coalesence of primary microcracks. Then the materials become to fracuture by main crack gen-eration at the maximum applied load.

• Journal of the Korean Ceramic Society
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• v.53 no.1
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• pp.56-62
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• 2016

A heterogeneous $Bi_2S_3/TiO_2$ composite catalyst was synthesized via a green ultrasonic-assisted method and characterized by XRD, SEM, EDX, TEM analysis. The results clearly show that the $TiO_2$ particles were homogenously coated with $Bi_2S_3$ particles, indicating that $Bi_2S_3$ particle agglomeration was effectively inhibited after the introduction of anatase $TiO_2$. The Texbrite BA-L (TBA) degradation rate constant for $Bi_2S_3/TiO_2$ composites reached $8.27{\times}10^{-3}min^{-1}$ under visible light, much higher than the corresponding value of $1.04{\times}10^{-3}min^{-1}$ for $TiO_2$. The quantities of generated hydroxyl radicals can be analyzed by DPCI degradation, which shows that under visible light irradiation, more electron-hole pairs can be generated. Finally, the possible mechanism for the generation of reactive oxygen species under visible-light irradiation was proposed as well. Our result shows the significant potential of $Bi_2S_3$-semiconductor-based $TiO_2$ hybrid materials as catalysts under visible light for the degradation of industry dye effluent substances.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1646-1648
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• 2000

This paper investigated structural and electrical properties of $Y_{2}O_3$ as a buffer layer of sin91r transistor FRAM (ferroelectric RAM). $Y_{2}O_3$ buffer layers were deposited at a low substrate temperature below 400$^{\circ}C$ and then RTA (rapid thermal anneal) treated. Investigated parameters are substrate temperature, $O_2$ partial pressure, post- annealing temperature, and suppression of interfacial $SiO_2$ layer generation. for a well-fabricated sample, we achieved that leakage current density ($J_{leak}$) in the order of $10^{-7}A/cm2$, breakdown electric field ($E_{br}$) about 2 MV/cm for $Y_{2}O_3$ film. Capacitance versus voltage analysis illustrated dielectric constants of 7.47. We successfully achieved an interface state density of $Y_{2}O_3$/Si as low as $8.72{\times}10^{10}cm^{-2}eV^{-1}$. The low interface states were obtained from very low lattice mismatch less than 1.75%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.47-50
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• 2000

This paper investigated structural and electrical properties of $Y_2$ $O_3$ as a buffer layer of single transistor FRAM (ferroelectric RAM). $Y_2$ $O_3$ buffer layers were deposited at a low substrate temperature below 40$0^{\circ}C$ and then RTA (rapid thermal anneal) treated. Investigated parameters are substrate temperature, $O_2$ partial pressure, post-annealing temperature, and suppression of interfacial $SiO_2$ layer generation. For a well-fabricated sample, we achieved that leakage current density ( $J_{leak}$) in the order of 10$^{-7}$ A/$\textrm{cm}^2$, breakdown electric field ( $E_{br}$ ) about 2 MV/cm for $Y_2$ $O_3$ film. Capacitance versus voltage analysis illustrated dielectric constants of 7.47. We successfully achieved an interface state density of $Y_2$ $O_3$/Si as low as 8.72x1010 c $m^{-2}$ e $V^{-1}$ . The low interface states were obtained from very low lattice mismatch less than 1.75%.

• Proceedings of the Korea Society for Energy Engineering kosee Conference
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• 2003.11a
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• pp.51-55
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• 2003

The thermal behavior of NiFe$_2$O$_4$ prepared by a solid-state reaction was investigated for H$_2$ generation by the thermochemical cycle. The reduction of NiFe$_2$O$_4$ started from 800 $^{\circ}C$, and the weight loss was 0.2-0.3 wt％ up to 1000 $^{\circ}C$. At this reaction, NiFe$_2$O$_4$ was reduced by release of oxygen bonded with the Fe$^3$ion in the B site of NiFe$_2$O$_4$. In the $H_2O$ decomposition reaction, H$_2$ was generated by oxidation of reduced NiFe$_2$O$_4$. The crystal structure of NiFe$_2$O$_4$ for redox reaction maintained spinel structure. Then, NiFe$_2$O$_4$ is excellent material in the thermochemical cyclic reaction due to release oxygen at low temperature for the reduction reaction and produce H$_2$ maintaining crystal structure for redox reaction.

• Korean Journal of Materials Research
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• v.26 no.4
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• pp.182-186
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• 2016

Zircon, having excellent thermal, chemical, and mechanical properties, is utilized in refractory materials, electronic materials, chemical machines, structural materials, etc. However, zircon generally shows thermal dissociation to zirconia($ZrO_2$) and silica($SiO_2$) around the sintering temperature of $1540^{\circ}C$, and when zircon particles are small and impurities are present, thermal dissociation is known to occur at around $1100^{\circ}C$. This reduces the mechanical properties of $ZrSiO_4$. In this research, the effect of adding $SiO_2$ and 3Y-TZP to $ZrSiO_4$ has been studied in order to suppress dissociation and improve the mechanical properties. Addition of $SiO_2$ suppressed the dissociation of $ZrSiO_4$ at lower temperatures. It also enabled optimum packing between the particles, resulting in a dense microstructure and good mechanical properties. When 3Y-TZP was added, recombination with the dissociated $SiO_2$ resulted in good mechanical properties by suppressing the generation of pores and the densification of the microstructure.

• BMB Reports
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• v.52 no.4
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• pp.265-270
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• 2019

We investigated whether SIRT1 is associated with reactive oxygen species (ROS) accumulation during CK2 downregulation-mediated senescence. SIRT1 overexpression suppressed ROS accumulation, reduced transcription of FoxO3a target genes, and nuclear export and acetylation of FoxO3a, which were induced by CK2 downregulation in HCT116 and MCF-7 cells. Conversely, overexpression of a dominant-negative mutant SIRT1 (H363Y) counteracted decreased ROS levels, increased transcriptional activity of FoxO3a, and increased nuclear import and decreased acetylation of FoxO3a, which were induced by CK2 upregulation. CK2 downregulation destabilized SIRT1 protein via an ubiquitin-proteasome pathway in human cells, whereas CK2 overexpression reduced ubiquitination of SIRT1. Finally, the SIRT1 activator resveratrol attenuated the accumulation of ROS and lipofuscin as well as lifespan shortening, and reduced expression of the DAF-16 target gene sod-3, which were induced by CK2 downregulation in nematodes. Altogether, this study demonstrates that inactivation of the SIRT1-FoxO3a axis, at least in part, is involved in ROS generation during CK2 downregulation-mediated cellular senescence and nematode aging.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.199-199
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• 2011

Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.