• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.211.1-211.1
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• 2013

We fabricate the conductive zinc oxide(ZnO) thin film using UV-enhanced atomic layer deposition. ZnO is semiconductor with a wide band gap(3.37eV) and transparent in the visible region. ZnO can be deposited with various method, such as metal organic chemical vapour deposition, magnetron sputtering and pulsed laser ablation deposition. In this experiment, ZnO thin films was deposited by atomic layer deposition using diethylzinc (DEZ) and D.I water as precursors with UV irradiation during water dosing. As a function of UV exposure time, the resistivity of ZnO thin films decreased dramatically. We were able to confirm that UV irradiation is one of the effective way to improve conductivity of ZnO thin film. The resistivity was investigated by 4 point probe. Additionally, we confirm the thin film composition is ZnO by X-ray photoelectron spectroscopy. We anticipate that this UV-enhanced ZnO thin film can be applied to electronics or photonic devices as transparent electrode.

• Analytical Science and Technology
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• v.16 no.4
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• pp.292-298
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• 2003

In this study, the photooxidation and ozonation of humic acid (HA) in aqueous solution were conducted and the treated HA samples at different reaction time were analyzed using ultrafiltration techniques to evaluate the change of their molecular size distributions with its DOC removal. Molecular size distribution of untreated HA showed 41.5% in higher molecular size fractions (>30,000 daltons) and 15.2% in much smaller molecular size fraction (<500 daltons). As UV irradiation time was increased, it was observed that the degradation of the large molecules of the fraction of >30,000 daltons into much smaller molecules was increased. In UV system, the HA molecules of the fraction of <500 daltons became significantly more and its percentage was increased from 35.3% (UV only irradiation) to 58.9% ($UV/TiO_2$) and 87.8% ($UV/H_2O_2$) in the presence of the photocatalysis. Otherwise, ozonation of HA produced mainly the fraction of medium molecular size ranging from 3,000 to 30,000 daltons with much lower portion (<~7%) in the fraction of <500 daltons. In ozone only system, the fraction of 30,000~10,000 daltons occupied in 41.5% at 60 min of ozonation time. In $O_3/H_2O_2$ system, the fraction of 30,000~10,000 daltons and 10,000~3,000 daltons occupied in 38.9% and 36.2% respectively. Based on these results, we suggested applicable treatment process which could be combined with $UV/H_2O_2$, $UV/TiO_2$ and $O_3$, $O_3/H_2O_2$ system for more effective removal of humic acid in water treatment.

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.66-69
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• 2017

In this paper, solution based Indium Zinc Oxide thin film transistors (IZO TFTs) were fabricated with PVP gate dielectric. To enhance the electrical properties, UV-O3 treatment is proposed on solution based IZO TFTs. The gate leakage current and interface trap density is compatible with conventional ZnO-based TFT with inorganic gate insulator. Especially, the UV-treated device shows improved electrical characteristics compared to the untreated device. These results can be explained by X-ray photoelectron spectroscopy (XPS) analysis, which shows that the oxygen vacancy of UV-O3 treatment is higher than that of no treatment.

• Journal of Soil and Groundwater Environment
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• v.21 no.1
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• pp.86-93
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• 2016

Fenton is the reaction using the OH· radicals generating by interaction between hydrogen peroxide and Fe²⁺ which can oxidize the contaminants. Fe²⁺ ions are oxidized to Fe³⁺ ions by reaction with H₂O₂ and formed OH· radicals. UV-Fenton process includes the additional reaction that generates the OH· radicals by photodegradation of H₂O₂. In methylorange (MO) decolourization experiment with UV-Fenton, optimal Fe²⁺: H₂O₂ ratio was obtained at 1 : 10. Based on the obtained condition (H₂O₂= 10mM, Fe²⁺ = 1 mM) with/without UV-fenton experiment was carried out. Removal efficiency and sludge production were measured at 30 min. The case of w/o UV irradiation and only H₂O₂ was hardly treated and only Fe²⁺ showed 65% removal owing to coagulation. When UV-Fenton process in optimal ratio (Fe²⁺: H₂O₂ = 1 : 10), UV irradiation showed better removal efficiency than of w/o UV irradiation. Also, MO decolourization was a function of the hydrogen peroxide concentration (x₁), Fe²⁺:H₂O₂ ratio (x₂), and numbers of UV lamp (x₃) from the application of the response surface methodology. Statistical results showed the order of significance of the independent variables to be hydrogen peroxide concentration > numbers of UV l amp > Fe²⁺: H₂O₂ ratio.

• Journal of the Korean Vacuum Society
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• v.4 no.3
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• pp.261-269
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• 1995

본 실험에서는 실리콘 웨이퍼 위에 photoresist(PR)와 octadecyltrichlorosilane(OST, CH3((CH2)17SiCI3)를 입혀서 UV/zone 처리를 어떻게 유기물질들이 UV/zone과 반응하여, 어떻게 표면에서 제거되는지를 in-line으로 연결된 XPS로 분석하고 반응시킨 표면들의 거칠기(roughness)를 AFM을 이용하여 관찰하였다. 실험결과 상온에서 UV/zone 처리를 했을 경우, PR과 OTS같은 유기물질이 표면에서 산화되는 것을 알 수 있었으나 이들이 제거되지 않고 표면에 그대로 남아있음을 알 수 있었다. 그러나 가열하면서(PR:$250^{\circ}C$, ORS:$100^{\circ}C$)UV/ozone 처리를 하였을 경우 표면에서 산화됨과 동시에 이들 산화물들이 표면에서 제거됨을 알 수 있었다. XPS 분석으로부터 이들의 산화반응물은 PR과 OTS 모두 -CH2-, -CH2O-, =C=O, -COO-를 가지는 것으로 나타났으며, 열에너지에 의해서 이들이 표면에서 제거되는 것으로 나타났다. AFM 분석결과는 상온에서 UV/ozone 처리를 하였을 경우에 표면의 거칠기가 적은 반면, 가열하면서 UV/o-zone처리를 하였을 경우에는 표면의 거칠기가 다소 증가하였다.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.91-95
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• 2010

A UV-enhanced atomic layer deposition (UV-ALD) process was developed to deposit $TiO_2$ thin films on Si substrates using titanium isopropoxide(TIP) and $H_2O$ as precursors with UV light. In the UV-ALD process, the surface reactions were found to be self-limiting and complementary enough to yield a uniform, conformal, pure $TiO_2$ thin film on Si substrates at room temperature. The UV light was very effective to obtain the high-quality $TiO_2$ thin films with good adhesive strength on Si substrates. The UV-ALD process was applied to produce uniform and conformal $TiO_2$ coats into deep trenches with high aspect ratio.

• Proceedings of the SCSK Conference
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• 1992.09a
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• pp.97-114
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• 1992

In these days sun products are developed and produced by the cosmetic scientists in the world. Peoples need strongly to protect themselves from the hazardous UV rays dued to the destruction of ozone layer. Therfore, we, cosmetic scientists must have an effort to produce the more effective goods. In this article the market survey of sun-products as well as the currency of sunscreen agents was investigated. It was found that Benzophenone - 3 and Ocytyl methoxy cinnamate were widely used. The lotions, using Benzophenone - 3 as the chemical agents, and TiO$_2$and micro TiO$_2$ as the physical agents, were measured the UV-Spectrum in the Dilution and Application method. Photoprotective activity of chemical agents can usually be measured in solution state. However, that of the insoluble physical agents such as TiO$_2$is hardly measured in this state. Photoprotective ability of the insoluble physical agents was able to be measured by application of lotions to the surface of UV cells. It was found by this method that micro TiO$_2$showd stronger UV scattering effect than TiO$_2$in this method.

• Journal of Korean Society on Water Environment
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• v.23 no.2
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• pp.274-280
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• 2007

The photochemical decolorization of Rhodamine B (RhB) in water has been carried out by photo-Fenton process. The effect of applied $H_2O_2$, $Fe^{2+}$ dose, solution pH and UV dose have been studied. The influence of constituent processes of photo-Fenton such as UV, $H_2O_2$ and Fenton has been investigated. Comparison of RhB removal was made between the photo-Fenton and $UV/H_2O_2$ process. The results obtained showed that the optimum dosage of $Fe^{2+}$ and $H_2O_2$ were 0.0031 mmol and 0.625 mol, respectively. pH 3 is found to be the optimum pH of for photo-Fenton process. pH and UV dose strongly influenced the decolorization of RhB in photo-Fenton process. The photo-Fenton and $UV/H_2O_2$ processes showed similar decolorization and seem to be appropriate for the decolorization of dye wastewater.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.234-234
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• 2008

Chemically homogeneous $Ba_{0.6}Sr_{0.4}TiO_3$ (BST) sols were synthesized using barium acetate, strontium acetate, and titanium isoproxide as starting materials. BST thin films of thickness 340 nm were deposited on Pt/$TiO_2/SiO_2$/Si and alumina substrates using spin coating method. The technique used for the processing of these films was Ultraviolet (UV) sol-gel photoannealing, using phto-sensitivity precursor solutions and UV-assisted rapid thermal processing(UV-RTP). The crystallization behaviour of the BST sols and thin films was studied by differential thermal analysis (DTA) and X-ray diffraction (XRD). Variation of permittivity and dielectric loss were measured in LCR-meter, model HP 4394A.

• Journal of the Korean Ceramic Society
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• v.48 no.3
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• pp.251-256
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• 2011

The luminescence properties of polycrystalline ZnO annealed in reducing ambience ($H_2/N_2$) have been studied. An effective quenching of green luminescence with enhanced UV emission from polycrystalline ZnO is observed for the reduced ZnO. The variations of the UV and green luminescence band upon reduction treatment are investigated as a function of temperature in the range between 20 and 300 K. Upon annealing treatment in reducing ambience, the optical quality of polycrystalline ZnO is improved. The UV to green intensity ratio of sintered ZnO approaches close to zero (~0.05). However, this ratio reaches more than 13 at room temperature for polycrystalline ZnO annealed at $800^{\circ}C$ in reducing ambience. Furthermore, the full width at half maximum (FWHM) of the UV band of polycrystalline ZnO is reduced compared to unannealed polycrystalline ZnO. Electron paramagnetic resonance (EPR) measurements clearly show that there is no direct correlation between the green luminescence and oxygen vacancy concentration for reduced polycrystalline ZnO.