• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.335-335
• /
• 2007

본 연구에서는 RF Magnetron Sputtering 법으로 94:6 wt%의 비율로 Sb가 첨가된 $SnO_2$ 타겟을 사용하여 실온에서 ATO(Antimony doped Tin Oxide) 박막을 증착하고, 열처리가 ATO 박막의 구조적, 전기적, 광학적 특성에 미치는 효과를 연구하고자 하였다. ATO 박막의 두께는 약 200 nm로 증착하였으며, 실험 조건으로는 Ar 유량을 100 seem, 진공도는 1, 5, 10 mTorr로 변화시켰으며 스퍼터링 파워는 100, 150, 200, 250 W로 조절하였다. 증착되어진 박막은 vacuum 상태에서 300, $600^{\circ}C$의 온도에서 열처리를 수행하였으며 결과적으로 스퍼터링 파워가 증가함에 따라 비저항이 감소하였고, 250 W의 파워와 10 mTorr의 공정압력 조건에서 $600^{\circ}C$로 열처리한 ATO 박막은 $5{\times}10^{-3}{\Omega}-cm$의 저항률과 85.3%의 높은 투과도를 가지는 우수한 투명 전도막을 얻을 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.533-538
• /
• 2003

It has been shown that ion implantation produces remarkable improvements in surface-sensitive physical and chemical properties as well as other mechanical properties, in polymers. In this study, ion implantation was performed onto polymer, PC(polycarbonate), in order to investigate surface hydrophilic property through contact angle measurement using distilled water. PC was irradiated with N, Ar, Xe ions at the irradiation energy of $20\;{\sim}\;50keV$ and the dose range of $5{\times}10^{15},\;1{\times}10^{16},\;7{\times}10^{16}\;ions/cm^2$. The contact angle of water has been reduced with increasing fluence and ion mass but increased with increasing implanted energy. The changes of chemical and structural property are discussed in view of infrared spectroscopy and FT-IR, XPS, which shows increasing C-O bonding and C-C bonding. The root mean square of surface roughness examined by means of AFM changed smoothly from 0.387nm to 0.207nm and the change of wettability was discussed with respect to elastic and inelastic collisions obtained as results of TRIM simulation. It was found that wettability of the modified PC surface was affected on change of functional group and nuclear stopping or linear energy transfer(LET, energy deposited per unit track length per ion) that causes chain scission by displacing atom from polymer chains, but was not greatly dependant on surface morphology.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.416-416
• /
• 2010

본 연구에서는 저가격, 대면적화를 위한 롤투롤 스퍼터를 설계&개발하고, 성막직전 PET 기판의 열처리 유무를 통한 ITO 박막을 성막 시킨 저항막 방식의 터치 패널용 투명 전극에 대하여 전기적, 광학적, 구조적, 표면적 특성을 분석하였다. 롤투롤 스퍼터는 degassing챔버와 스퍼터 챔버가 한 시스템에 구성되었고, Degassing 챔버는 좌우측의 Rewinder/Unwinder 롤러에 의해 감고 풀어지는 PET기판의 수분 및 가스를 중앙부에 위치한 히터를 통해 제거하며, 수분 제거 후 스퍼터 챔버로 옮겨진 1250 mm폭의 PET기판을 Unwinder/Rewinder 롤러에 장착하며, Unwinder 롤러로부터 풀려진 PET 기판은 guide 롤러를 거쳐 cooling drum과의 물리적 접촉에 의해 PET 기판의 냉각이 일어나게 된다. ITO 캐소드 전에 장착된 할로겐 히터 상부로 기판이 지나가면서 열처리가 진행되고 열처리 후 두 개의 ITO 캐소드 상부를 지나면서 연속적으로 ITO 박막이 PET 기판에 성막 되게 된다. ITO 박막의 주요 성막 변수인 DC Power, Ar/$O_2$ 가스 유량비, 기판의 속도는 최적으로 고정하고, 성막 직전 기판의 열처리에 유무에 따른 ITO박막의 필름을 각각 고온 챔버에서 $140^{\circ}C{\times}90min$ 동안 열처리를 통한 내열성 테스트를 진행하여 ITO 필름의 특성 향상을 비교 분석하였다. 분석을 위해 전기적 특성은 four-point probe로 측정했고, 투과도는 Nippon Denshoku사(社)의 COH-300A를 이용해 가시광(550nm)에서 분석했고, FE-SEM으로 ITO박막 의 표면 상태를 분석하였다. 또한 Bending Tester(Z-100)를 이용하여 기계적 안정성을 분석하였다. 성막직전 PET 기판의 열처리를 하지 않은 ITO박막은 고온의 챔버 에서 $140^{\circ}C{\times}90min$ 동안 내열성 테스트 후 면저항이 511($\omega/\Box$)에서 630($\omega/\Box$)으로 높아졌으나, 성막직전 열처리를 통한 ITO 박막인 경우에는 465($\omega/\Box$)에서 448($\omega/\Box$)로 안정화 되었고, 투과율은 성막직전 열처리를 통해 1%향상되어 89%를 보였고, 유연성 또한 보다 우수한 특성을 보였다. 표면 조도는 평균 0.416 nm의 낮은 값을 보였다. 이는 PET 기판의 degassing 공정 중 충분히 제거되지 않은 가스나 불순물을 성막직전 열처리 공정으로 충분히 제거하여 깨끗한 PET 기판 상에 ITO 박막을 성막시키고, 열처리시 기판에 주어진 열에너지에 의해 보다 밀도가 높은 ITO 박막이 성장했기 때문으로 사료 된다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.448-448
• /
• 2010

Magnetic random access memory (MRAM) has made a prominent progress in memory performance and has brought a bright prospect for the next generation nonvolatile memory technologies due to its excellent advantages. Dry etching process of magnetic thin films is one of the important issues for the magnetic devices such as magnetic tunneling junctions (MTJs) based MRAM. CoFeB is a well-known soft ferromagnetic material, of particular interest for magnetic tunnel junctions (MTJs) and other devices based on tunneling magneto-resistance (TMR), such as spin-transfer-torque MRAM. One particular example is the CoFeB - MgO - CoFeB system, which has already been integrated in MRAM. In all of these applications, knowledge of control over the etching properties of CoFeB is crucial. Recently, transferring the pattern by using milling is a commonly used, although the redeposition of back-sputtered etch products on the sidewalls and the low etch rate of this method are main disadvantages. So the other method which has reported about much higher etch rates of >$50{\AA}/s$ for magnetic multi-layer structures using $Cl_2$/Ar plasmas is proposed. However, the chlorinated etch residues on the sidewalls of the etched features tend to severely corrode the magnetic material. Besides avoiding corrosion, during etching facets format the sidewalls of the mask due to physical sputtering of the mask material. Therefore, in this work, magnetic material such as CoFeB was etched in an ICP etching system using the gases which can be expected to form volatile metallo-organic compounds. As the gases, carbon monoxide (CO) and ammonia ($NH_3$) were used as etching gases to form carbonyl volatiles, and the etched features of CoFeB thin films under by Ta masking material were observed with electron microscopy to confirm etched resolution. And the etch conditions such as bias power, gas combination flow, process pressure, and source power were varied to find out and control the properties of magnetic layer during the process.

• Journal of the Korean Society for Precision Engineering
• /
• v.17 no.11
• /
• pp.191-198
• /
• 2000

Laser direct patterning of the coated photoresist (PMER-NSG31B) layer was studied to make halftone dots on gravure printing roll. The selective laser hardening of photoresist by Ar-ion laser(wavelength: 333.6~363.8nm) was controlled by the A/O modulator. The coating thickness in the range of 5~11$\mu m$ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines formed under the laser power of 200~260㎽ and irradiation time of 4.4~6.6 $\mu$sec/point were investigated after developing. The hardened width increased as the coating thickness increased. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line widths of 10$\mu m$ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6$\mu m$ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

• Journal of Korean Society on Water Environment
• /
• v.38 no.5
• /
• pp.211-219
• /
• 2022

In this study, the effect of liquid height/volume on sonochemical oxidation reactions was investigated in 300 kHz sonoreactors. The gas mixture of Ar/O₂ (50:50) was applied in two modes including saturation and sparging, and zero-order reaction (KI dosimetry) and first-order reaction (Bisphenol A (BPA) degradation) were used to quantitatively analyze sonochemical oxidation reactions. For the zero-order reaction, the highest sonochemical oxidation activity was obtained for the liquid height of 5𝛌, and the lowest height for both the gas saturation and sparging conditions. In addition, the sparging did not enhance the sonochemical oxidation activity for all height conditions except for 50𝛌, where very low activity was obtained. It was found that in sonochemiluminescence (SCL) images the sonochemical active zone was formed adjacent to the liquid surface for the gas sparging condition due to the formation of the standing wave field while the active zone was formed adjacent to the transducer at the bottom due to the blockage of ultrasound. For the first-order reaction, the highest activity was also obtained at 5𝛌 and the comparison based on the reactant mass was not appropriate because the concentration of the reactant (BPA) decreased significantly as the reaction time elapsed. Consequently, it was revealed that the determination of optimal liquid height (ultrasound irradiation distance) based on the wavelength of the applied ultrasound frequency was very important for the optimal design of sonoreactors in terms of reaction efficiency and reactor size.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.163-163
• /
• 2000

In this research, we used the ion irradiation technique which has an advantae in improving intentionally the properties of surface and interface in a non-equilibrium, instead of the conventional annealing method which has been known to improve the material properties in the equilibrium stat. Cu/Co multilayered films were prepared on SiN4/SiO2/Si substrates by the electron-beam evaporation for the Co layers and the thermal evaporation for the Cu layers in a high vacuum. The ion irradiation with a 80keV Ar+ was carried out at various ion doses in a high vacuum. Hysteresis loops of the films were investigated by magneto-optical polar Kerr spectroscopy at various experimental conditions. The change of atomic structure of the films before and after the ion irradiation was studied by glancing angle x-ray diffraction, and the intermixing between Co and Cu sublayers was confirmed by Rutherford backscattering spectroscopy. The surface roughness and magneto-resistance were measured by atomic force microscopy and with a four-point probe system, respectively. During the magneto-resistance measurement, we changed temperature and the direction of magnetization. From the results of experiments, we found that the change at the interfaces of the Cu/Co multilayered film induced by ion irradiation cause the change of magnetic properties. According to the change in hysteresis loop, the surface inplane component of magnetic easy axis was isotropic before the ion irradiation, but became anisotropic upon irradiation. It was confirmed that this change influences the axial behavior of magneto-resistance. Especially, the magneto-resistance varied in accordance with an external magnetic field and the direction of current, which means that magneto-resistance also shows the uniaxial behavior.

• Journal of Practical Agriculture & Fisheries Research
• /
• v.20 no.1
• /
• pp.175-185
• /
• 2018

This study was conducted to evaluate the physiological and ecological characters of rice cultivars suitable for low fertilized condition. 5 rice cultivars(Jinmibyeo, Sobibyeo, Hwayeongbyeo, Nagdongbyeo and Junambyeo) were cultivated for selection under 3 different nitrogen application levels, and 1 cultivars were selected. The results obtained are summarized as follows ; High yielded rice cultivars under low N application level were Junambyeo, Jinheng and Sobibyeo. Also these cultivars were yielded highly under conventional level(11kg/10a). Milled rice yield under conventional level(11kg/10a) was positively correlated with them under low N levels. Milled rice yield was most affected by no. of grain/m². Rice cultivars that were high crop growth rate(CGR) before heading stage were Junambyeo, Sobibyeo and Nagdongbyeo. Grain filling rate was increased mostly until 20 days after heading, and decreased after this stage. Nitrogen use efficiency was higher under low N level(5.5kg/10a) than conventional level(11kg/10a). Especially, Junambyeo was most low in Apparent recovery of applied N(AR) under low N application level, but most high in Agronomic N use efficiency(ANUE). This characteristics of Junambyeo will to be useful for selection of variety suitable for growing under low fertilized condition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.37 no.3
• /
• pp.323-327
• /
• 2024

The low-temperature coefficient of resistance (TCR) is a crucial factor in the development of space-grade resistors for temperature stability. Consequently, extensive research is underway to achieve zero TCR. In this study, resistors were deposited by co-sputtering nickel-chromium-based composite compositions, metals showing positive TCR, with SiO₂, introducing negative TCR components. It was observed that achieving zero TCR is feasible by adjusting the proportion of negative TCR components in the deposited thin film resistors within certain compositions. Additionally, the correlation between TCR and deposition conditions, such as sputtering power, Ar pressure, and surface roughness, was investigated. We anticipate that these findings will contribute to the study of resistors with very low TCR, thereby enhancing the reliability of space-level resistors operating under high temperatures.

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2001.11a
• /
• pp.28-28
• /
• 2001

$Bi_2Te_3$계 열전반도체 재료는 200 ~ 400K 정도의 저온에서 에너지 변환 효율이 가장 높은 재료로서 열전냉각 및 발전재료로 제조볍 및 특성에 관한 많은 연구가 진행되어 왔다. 전자냉각 모듈의 제조에는 P형 및 N형 $Bi_2Te_3$계 단결정이 주로 사용되고 있으나. $Bi_2Te_3$ 단결정은 C축에 수직한 벽개면을 따라 균열이 쉽게 전파하기 때문에 소자 가공사 수윤 저하가 가장 큰 문제점으로 지적되고 있다. 이에 따라 최근 열전재료의 가공방법에 따른 회수율 증가 및 열전특성 향상에 관한 열간압출, 단조와 같은 연구가 활발히 이루어지고 있다. 본 연구는 가스분사법(gas atomizer)을 이용하여 용질원자 편석의 감소, 고용도의 증가,균일고용체 형성, 결정립미세화 둥 급속응고의 장점을 이용하여 화학적으로 균질한$Bi_2Te_3$계 열전재료 분말을 제조하고, 제조된 분발을 압출가공하여 기계적성질, 소자의 가공성 및 열전 성능 지수율 향상시키는데 연구 목적이 있다. 본 설험에서는 99.9%이상의 고순도 Bi. Te. Se. Sb를 이용하여, 고주파 유도로에서 Ar 분위기로 용융하고, 가스분사법를 이용하여 균질한 $Bi_2Te_3$계 열전재료 분만을 제조하였다. 분말표면의 산화막을 제거하기 위하여 수소분위기에서 환원처리를 행하였고, 된 분말을 Al 캔 주입하여 냉간성형 한 후 진공중에서 압출온도를 변화시켜 열간압출 가공을 행하였다. 압출 온도변화에 따른 압출재의 미세조직 및 열전특성에 중요한 영향을 미치는 C면 배향에 대한 결정방위 해석, 압출재의 압축강도 등을 분석하였으며, 압출온도에 따삼 미세조직 변화와 결정방위의 변화에 따른 열전특성의 관계를 해석하였다성시켰고 이들이 산인 HNO3에서 녹았기 때문이다. 본 연구에서 개발된 새로운 에칭 용액인 90H2O2 - 10HNO3 (vol%)의 에칭 원리가 똑같이 적용 가능한 다른 종류의 초경 합금에서도 사용이 가능할 것으로 판단된다.로 판단된다.멸과정은 다음과 같다. 출발물질인 123 분말이 211과 액상으로 분해될 때 산소가스가 배출되며, 이로 인해 액상에서 구형의 기공이 생성된다. 이들 중 일부는 액상으로 채워져 소멸되나, 나머지는 그대로 남는다. 특히, 시편 중앙에 서는 수십-수백 마이크론 크기의 커다란 기공이 다수 관찰된는데, 이는 기공의 합체로 만들어진 것이다. 포정반응 열처리 시 기공 소멸로 만들어진 액상포켓들은 주변 211 입자와 반응하여 123 영역으로 변한다. 이곳은 다른 지역과 비교하여 211 밀도 가 낮기 때문에, 미반응 액상이 남거나 211 밀도가 낮은 123 영역이 된다. 액상으로 채워지지 못한 구형의 기공들 중 다수가 123 결정 내로 포획되며, 그 형상은 액상/ 기공/고상 계면에너지에 의해 결정된다.단의 경우, 파단면이 매끄럽고 파변상의 결정립도 매우 미세하였으며, 산확물 의 용집도 찾아보기 어려웠 나, 접합부 파단의 경우에는 파변의 굴곡이 비교척 심하고 연성 입계파괴의 형태를 보였￡며, 결정립도 모채부 파단의 경우에 비해 조대하였다. 조대하였다. 셋째, 주상기간 중 총 에너지 유입률 지수와 $Dst_{min}$ 사이에 높은 상관관계가 확인되었다. 특히 환전류를 구성하는 주요 입자의 에너지 영역(75~l13keV)에서 가장 높은(0.80) 상관계수를 기록했다. 넷째, 회복기 중에 일어나는 입자들의 유입은 자기폭풍의 지속시간을 연장시키는 경향을 보이며 큰 자기폭풍일수록 현저했다. 주상에서 관측된 이러한 특성은 서브스톰 확장기 활동이 자기폭풍의