• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2003.05a
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• pp.32-33
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• 2003

Mechanism of a periodic oscillation of shock-induced combustion over a two- dimensional wedges and axi-symmetric cones were investigated through a series of numerical simulations at off-attaching condition of oblique detonation waves(ODW). A same computational domain over 40 degree half-angle was considered for two-dimensional and axi-symmetric shock-induced combustion phenomena. For two-dimensional shock-induced combustion, a 2H2+02+17N2 mixture was considered at Mach number was 5.85with initial temperature 292 K and initial pressureof 12 KPa. The Rankine-Hugoniot relation has solution of attached waves at this condition. For axi-symmetric shock-induced combustion, a H2+2O2+2Ar mixture was considered at Mach number was 5.0 with initial temperature 288 K and initial pressure of 200 mmHg. The flow conditions were based on the conditions of similar experiments and numerical studies.[1, 3]Numerical simulation was carried out with a compressible fluid dynamics code with a detailed hydrogen-oxygen combustion mechanism.[4, 5] A series of calculations were carried out by changing the fluid dynamic time scale. The length wedge is varied as a simplest way of changing the fluid dynamic time scale. Result reveals that there is a chemical kinetic limit of the detached overdriven detonation wave, in addition to the theoretical limit predicted by Rankine-Hugoniot theory with equilibrium chemistry. At the off-attaching condition of ODW the shock and reaction waves still attach at a wedge as a periodically oscillating oblique shock-induced combustion, if the Rankine-Hugoniot limit of detachment isbut the chemical kinetic limit is not.Mechanism of the periodic oscillation is considered as interactions between shock and reaction waves coupled with chemical kinetic effects. There were various regimes of the periodicmotion depending on the fluid dynamic time scales. The difference between the two-dimensional and axi-symmetric simulations were distinct because the flow path is parallel and uniform behind the oblique shock waves, but is not behind the conical shock waves. The shock-induced combustion behind the conical shockwaves showed much more violent and irregular characteristics.From the investigation of characteristic chemical time, condition of the periodic instability is identified as follows; at the detaching condition of Rankine-Hugoniot theory, (1) flow residence time is smaller than the chemical characteristic time, behind the detached shock wave with heat addition, (2) flow residence time should be greater than the chemical characteristic time, behind an oblique shock wave without heat addition.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.22 no.3
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• pp.8-16
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• 1986

The fishing conditions of flying squid, ommastrePhes barsram(Lesueur), in the North Pacific Ocean was studied based on the horizontal water temperature data, satellite data from NOAA and statistical data of flying squid fisheries which were collected from 1980 to 1984. The obtained results were as follows; 1. Since 1979, the Korean drift giIlnet fishery for flying squid was launched in North Pacific. Number of operating vessel and catch of flying squid increased gradually every year. The number of vessels were 111 and their annual catches were 42, 977 M/T in 1984. Therefore, Korean drift giIlnet fishery for this species has played an important role in the products of Korean high-sea fisheries. 2. In the beginning of the fisheries, fishing grounds was formed in the west of long. 1800E. In 1982, in consequence of the center which extended eastward, the fishing ground was formed long. 166$^{\circ}$W in the central North Pacific Ocean. Since 1983, the fishing grounds were formed as far as long. 161$^{\circ}$W. The range of general fishing season in the central North Pacific was from June to August. After september, fishing ground was shifted to the west, in the Northwestern Pacific. 3. The Predominant fishing season for the flying squid was August through January of the coming year. Optimum water temperature for flying sguid at surface layer in the Pacific Ocean ranged from 11 $^{\circ}$e to 17$^{\circ}$e in winter, 13$^{\circ}$e to 17$^{\circ}$e in spring, 12. 8$^{\circ}$C to 19.7$^{\circ}$e in summer and 1O.6$^{\circ}$e -18.7$^{\circ}$e in fall. 4. In summer, the Oceanographic condition in the North Pacific Ocean showed that the water temperature at surface layer was lower in 1980, 1983 and higher in 1981, 1982 and 1984 as compared with mean annual water temperature. 5. The characteristics df oceanographic conditions in the fluation, disformation, mixing and other factors of the Kuroshio and Oyashio currents, which have considerably influenced upon the water masses of the areas. 6. The data and information on surface thermal Structure interpreted from Infrared Satellite Imaginary from NOAA-7 and NOAA-8 are very available in estimating water temperature on the areas and investigating the major fishing grounds. 7. According to the fisheries statics of Japanese drift gilInet, the annual catches of flying squid considerably decreased from 225, 942 M/T in 1983 to 133, 217 M/T in 1984. 8. The fishing grounds in the central North Pacific in several fishing seasons were formed as follows: In June, the initial fishing season, the fishing grounds were formed in the vicinity of lat. 35 - 40oN, the central North Pacific east of 179$^{\circ}$E. In July, the fishing ground were formed in the wide arEa of the central North Pacific north of 400N and long. 174$^{\circ}$E-145$^{\circ}$W In Auguest, concentrative fishing operation carried out in :he central North Pacific north of 43$^{\circ}$N and East of 165$^{\circ}$W. On the other hand, in September, main fishing grounds were disappeared and moved to the west.

• Journal of the Mineralogical Society of Korea
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• v.15 no.3
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• pp.205-220
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• 2002

The gold-silver deposits in the Casado district were formed in the sheeted and stockwork quartz veins which fill the fault fractures in volcanic rocks. K-Ar dating of alteration sericite (about 70 Ma) indicates a Late Cretaceous age for ore mineralization. These veins are composed of quartz, adularia, carbonate, and minor of pyrite, sphalerite, chalcopyrite, galena, Ag-sulfosalts (argentite, pearceite, Ag-As-Sb-S system), and electrum. These veins are characterized by chalcedonic, comb, crustiform and feathery textures. Based on the hydrothermally altered mineral assemblages, regional alteration zoning associated with mineralization in the Gasado district is defined as four zones; advanced argillic (kaolin mineral-alunite-quartz), argillic (kaolin mineral-quartz), phyllic (quartz-sericite-pyrite) and propylitic (chlorite-carbonate-quartz-feldspar-pyroxene) zone. Phyllic and propylitic zones is distributed over the study area. However, advanced argillic zone is restricted to the shallow surface of the Lighthouse vein. Compositions of electrum ranges from 14.6 to 53.7 atomic % Au, and the depositional condition for mineralization are estimated in terms of both temperature and sulfur fugacity: T=245。$~285^{\circ}C$, logf $s_2$=$10^{-10}$ ~ $10^{-12}$ Fluid inclusion and stable isotope data show that the auriferous fluids were mixed with cool and dilute (158。~253$^{\circ}C$ and 0.9~3.4 equiv. wt. % NaCl) meteoric water ($\delta^{18}$ $O_{water}$=-10.1~8.0$\textperthousand$, $\delta$D=-68~64$\textperthousand$). These results harmonize with the hot-spring type of the low-sulfidation epithermal deposit model, and strongly suggest that Au-Ag mineralization in the Gasado district was formed in low-sulfidation alteration type environment at near paleo-surface.

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.190-194
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• 2012

The formation of high-quality polycrystalline silicon (poly-Si) on relatively low cost substrate has been an important issue in the development of thin film solar cells. Poly-Si seed layers were fabricated by an inverse aluminum-induced crystallization (I-AIC) process and the properties of the resulting layer were characterized. The I-AIC process has an advantage of being able to continue the epitaxial growth without an Al layer removing process. An amorphous Si precursor layer was deposited on Corning glass substrates by RF magnetron sputtering system with Ar plasma. Then, Al thin film was deposited by thermal evaporation. An $SiO_2$ diffusion barrier layer was formed between Si and Al layers to control the surface orientation of seed layer. The crystallinity of the poly-Si seed layer was analyzed by Raman spectroscopy and x-ray diffraction (XRD). The grain size and orientation of the poly-Si seed layer were determined by electron back scattering diffraction (EBSD) method. The prepared poly-Si seed layer showed high volume fraction of crystalline Si and <100> orientation. The diffusion barrier layer and processing temperature significantly affected the grain size and orientation of the poly Si seed layer. The shorter oxidation time and lower processing temperature led to a better orientation of the poly-Si seed layer. This study presents the formation mechanism of a poly seed layer by inverse aluminum-induced crystallization.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.717-722
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• 2004

A design was done, and all characteristic of photodetectr of the web pattern type which a standard process of the Bipolar which Si PIN structure was used in this paper, and was used for the current amplifier design was used, and high-speed, was used as receiving optcal area of high altitude, and the module which had a low dark current characteristic was implemented with one chip with a base. Important area decreases an area of Ie at the time of this in order to consider an electrical characteristic and economy than the existing receiving IC, and performance of a product and confidence are got done in incense. First of all, the receiving IC which a spec, pattern of a wafer to he satisfied with the following electrical optical characteristic that produced receiving IC of 5V and structure are determined, and did one-chip is made. On the other hand, the time when AR layer of double is $Si_{3}N_{4}/SiO_{2}=1500/1800$ has an optical reflectivity of less than $10{\%}$ on an incidence optical wavelength of 660 ,and, in case of photo detector which reverse voltage made with 1.8V runs in 1.65V, an error about a change of thickness is very the thickness that can be improved surely. And, as for the optical current characteristic, about 5 times increases had the optical current with 274nA in 55nA when Pc was -27dBm. A BJT process is used, and receiving IC running electricity suitable for low voltage and an optical characteristic in minimum 1.8V with a base with two phases is made with one chip. IC of low voltage operates in 1.8V and 3.0V at the same time, and optical link receiving IC is going to be implemented

• KSBB Journal
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• v.17 no.3
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• pp.235-240
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• 2002

The surface of polypropylene was modified by 1 keV $Ar^+$ ion beam in an $O_2$ environment in order to enhance wettability. Contact angle of deionized water on modified polypropylene was reduced from $78^{\circ}$to $22^{\circ}$. The enhanced wettability is originated from newly formed functional groups such as ether, carbonyl, and carbonyl groups. During immersion in deionized water, the enhanced wettability has remained nearly same. After washing in water, the hydrophilic functional groups on the polymer surface have been very stable. The modified polypropylene was adopted as bio-film media to remove organics in synthetic wastewater. Microbe adhesion on the polypropylene surface was improved due to the newly formed hydrophilic groups.

• Journal of The Korean Astronomical Society
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• v.41 no.6
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• pp.163-172
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• 2008

Using the spectral data in the 3700 to $10050{\AA}$ wavelength range secured with the Hamilton Echelle Spectrograph (HES) at the Lick observatory, we have investigated the expansion velocities and the physical conditions of the elliptical planetary nebula NGC 6803. Various forbidden and permitted lines, e.g. HI, HeI, HeII, [OIII], [NII], [ArIII], and [SII], indicate complicated but systematic physical conditions variation: electron temperatures $T_{\varepsilon}\;{\sim}\;9000$ - 11000 K and electron number densities $N_{\varepsilon}\;{\sim}\;2000$ - $9000\;cm^{-3}$. The line profile analysis of these ions also indicates the systematic change or the acceleration of the expansion velocities in the range of 10 - $22\;km\;s^{-1}$. We show that the velocity gradient and physical condition found in various ions are closely related to the prolate ellipsoidal structure of NGC 6803. The expansion velocity and the ionic abundance of $O^{2+}$ were derived based on the OII and [OIII] lines. In spite of the discrepancy of ionic abundances derived by the two cases and their line profiles, the expansion velocities of them agree well. We find that the ratios of the red to blue line component of the HeII & OII lines are different from those of the [OIII] or other forbidden lines that indicates a possible involvement of emission of HeII & OII lines. This subtle difference and the different physical condition of the lines are likely to be caused by the elongated geometry and the latitude dependence of the emission zone.

• Journal of the Korean institute of surface engineering
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• v.38 no.5
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• pp.188-192
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• 2005

Indium zinc oxide (IZO) thin films were deposited on glass substrate by dc magnetron sputtering. The effects of oxygen flow rate and deposition temperature on electrical and optical properties of the films were investigated. With addition of small amount of oxygen gas, the characteristic properties of amorphous IZO films were improved and the specific resistivity was about $4.8{\times}10^{-4}\Omega{\cdot}cm$. Change of structural properties according to the deposition temperature was observed with XRD, SEM, and AFM. Films deposited above $300^{\circ}C$ were found to be polycrystalline. Surface roughness of the films was increased due to the formation of grains on the surface. Electrical conductivity became deteriorated for polycrystalline IZO films. Consequently, high quality IZO films could be prepared by do sputtering with $O_{2}/Ar{\simeq}0.03$ and deposition temperature in range of $150\~200^{\circ}C$; a specific resistivity of $3.4{\times}10^{-4}{\Omega}{\cdot}cm$, an optical transmission over $90\%$ at wavelength of 550 nm, and a rms value of surface roughness about $3{\AA}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.183-183
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• 2012

In the era of 45 nm or beyond technology, conventional etch mask using photoresist showed its limitation of etch mask pattern collapse as well as pattern erosion, thus hard mask in etching became necessary for precise control of etch pattern geometry. Currently available hard mask materials are amorphous carbon and polymetric materials spin-on containing carbon or silicon. Amorphous carbon layer (ACL) deposited by PECVD for etch hard mask has appeared in manufacturing, but spin-on carbon (SOC) was also suggested to alleviate concerns of particle, throughput, and cost of ownership (COO) [1]. SOC provides some benefits of reduced process steps, but it also faced with wiggling on a sidewall profile. Diamond like carbon (DLC) was also evaluated for substituting ACL, but etching selectivity of ACL was better than DLC although DLC has superior optical property [2]. Developing a novel material for pattern hard mask is very important in material research, but it is also worthwhile eliminating a potential issue to continuously develop currently existing technology. In this paper, we investigated in-situ dry-cleaning (ISD) monitoring of ACL coated process chamber. End time detection of chamber cleaning not only provides a confidence that the process chamber is being cleaned, but also contributes to minimize wait time waste (WOW). Employing Challenger 300ST, a 300mm ACL PECVD manufactured by TES, a series of experimental chamber cleaning runs was performed after several deposition processes in the deposited film thickness of $2000{\AA}$ and $5000{\AA}$. Ar Actinometry and principle component analysis (PCA) were applied to derive integrated and intuitive trace signal, and the result showed that previously operated cleaning run time can be reduced by more than 20% by employing real-time monitoring in ISD process.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.463-463
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• 2012

ITRS (international technology roadmap for semiconductors)에 따르면 MOS(metal-oxide-semiconductor)의 CD (critical dimension)가 45 nm node이하로 줄어들면서 poly-Si/$SiO_2$를 대체할 수 있는 poly-Si/metal gate/high-k dielectric이 대두된다고 보고하고 있다. 일반적으로 high-k dielectric를 식각시 anisotropic 한 식각 형상을 형성시키기 위해서 plasma를 이용한 RIE (reactive ion etching)를 사용하고 있지만 PIDs (plasma induced damages)의 하나인 PIED (plasma induced edge damage)의 발생이 문제가 되고 있다. PIED의 원인으로 plasma의 direct interaction을 발생시켜 gate oxide의 edge에 trap을 형성시키므로 그 결과 소자 특성 저하가 보고되고 있다. 그러므로 본 연구에서는 이에 차세대 MOS의 high-k dielectric의 식각공정에 HDP (high density plasma)의 ICP (inductively coupled plasma) source를 이용한 원자층 식각 장비를 사용하여 PIED를 줄일 수 있는 새로운 식각 공정에 대한 연구를 하였다. One-monolayer 식각을 위한 1 cycle의 원자층 식각은 총 4 steps으로 구성 되어 있다. 첫 번째 step은 Langmuir isotherm에 의하여 표면에 highly reactant atoms이나 molecules을 chemically adsorption을 시킨다. 두 번째 step은 purge 시킨다. 세 번째 step은 ion source를 이용하여 발생시킨 Ar low energetic beam으로 표면에 chemically adsorbed compounds를 desorption 시킨다. 네 번째 step은 purge 시킨다. 결과적으로 self limited 한 식각이 이루어짐을 볼 수 있었다. 실제 공정을 MOS의 high-k dielectric에 적용시켜 metal gate/high-k dielectric CMOSFETs의 NCSU (North Carolina State University) CVC model로 구한 EOT (equivalent oxide thickness)는 변화가 없으면서 mos parameter인 Ion/Ioff ratio의 증가를 볼 수 있었다. 그 원인으로 XPS (X-ray photoelectron spectroscopy)로 gate oxide의 atomic percentage의 분석 결과 식각 중 발생하는 gate oxide의 edge에 trap의 감소로 기인함을 확인할 수 있었다.