• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.176-182
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• 2002

Amorphous $TiO_2$ thin films were deposited on glass substrates by ion beam sputtering in which the ratio of $O_2$/Ar gas used as discharged gas was varied from 0 to 2. After optical and microstructure properties and chemical composition of thin films was analyzed, antireflection coating layers were fabricated with $SiO_2$/$TiO_2$ multi-layers. Thin films deposition was performed at room temperature and ion beam voltage and ion current density for sputtering of target were fixed at 1.2 kV and 200 $\mu\textrm{A}/\textrm{cm}^2$, respectively. Refractive indexs of the deposited $TiO_2$films were 2.40-2.45 at a wavelength of 633 nm. $TiO_2$films had high transmission and stoichiometry when ratio of $O_2$/Ar was 1. Rms roughness of deposited $TiO_2$ film was below 7 $\AA$. In excessive $O_2$ environments, however Rms roughness increased over 50 $\AA$. Transmittance decreased by scattering of rough surface. Reflectance of $SiO_2$/$TiO_2$multi-layers was below 1% in visible light.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.8-11
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• 2001

In this study. the recovery of plasma induced damage in the etched PZT thin film with $O_2$ re-annealing have been investigated. The PZT thin films were etched as a function of $Cl_2/Ar$ and additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etch rates of PZT thin films were $1600\dot{A}/min$ at $Cl_{2}(80%)/Ar(20)%$ gas mixing ratio and $1970\dot{A}/min$ at 30 % additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etched profile of PZT films was obtained above 70 by SEM. In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT phase revealed by x-ray diffraction (XRD). From XPS analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of TixOy is recovered by $O_2$ recombination during rapid thermal annealing process. From AFM images, it shows that the surface roughness of re-annealed sample after etching is improved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.276-279
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• 2011

This work, the etching characteristics of $Ba_2Ti_9O_{20}$(BTO) thin films were investigated using an inductively coupled plasma (ICP) of $Ar/Cl_2$ gas mixture. The etch rate of BTO thin films as well as the $BTO/SiO_2$ and BTO/PR etch selectivity were measured as functions of $Ar/Cl_2$ mixing ratio (0~100% Ar) at a constants gas pressure (6 mTorr), total gas flow rate (50 sccm), input power (700 W) and bias power (200 W). The etch rate of BTO thin films decreased with increasing Ar fraction. To analyze the etching mechanism an optical emission spectroscopy (OES), double Langmuir probe(DLP) and surface analysis using X-ray photoelectron spectroscopy (XPS) were carried out.

• Journal of the Korean Ceramic Society
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• v.37 no.11
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• pp.1084-1090
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• 2000

(Bi$_2$O$_2$)$^{2+}$층 사이에 두 개의 Ta-O 팔면체로 연결된 Bi 계의 층상 페로브스카이트 구조인 SrBi$_2$Ta$_2$O$_{9}$ (SBT) 박막을 XPS를 이용하여 깊이별 화학 상태 변화를 분석하였다. 아르곤 이온으로 SBT 박막을 식각하면, SBT 박막의 각 구성물들은 가속 Ar$^{+}$ 이온의 에너지에 따라 변화한다. SBT 각 구성물 중 Sr 3d의 화학 상태는 Ar$^{+}$ 이온의 에너지변화에 따라 근소하게 변화한다. 반면에, Ta 4f와 Bi 4f의 화학 상태 변화는 인가되는 Ar$^{+}$ 이온 에너지에 확실하게 의존한다. 특히, Bi 4f는 Sr과 Ta에 비해 낮은 Ar$^{+}$ 이온 에너지에서도 Bi-O의 화학 상태가 금속 Bi 화학 상태로 현저하게 변화한다. 이러한 SBT 박막의 화학 상태 변화는 산호 원자의 선택적인 식각 때문에 발생하며 선택적인 식각은 SBT 박막 내에서 각 구성물과 산소간의 질량 차이와 각 구성물의 열적 안정성에 의존함을 알 수 있다.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.51-56
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• 2001

$CeO_2$ thin films as insulator for MFISFET (Metal-ferroelectric-insulator- semiconductor-field effect transistor) were deposited by r.f. magnetron sputtering. Ar and $O_2$ gas as the deposition gas were used and the effects of oxygen partial pressure during sputtering on texture and electrical properties of $CeO_2$ thin films were evaluated. All $CeO_2$ thin films deposited on p-type Si(100) substrate at $600^{\circ}C$ exhibited (200) preferred orientation. The films deposited with only Ar gas among various condition had highest preferred orientation but show large hysteresis characteristics in capacitance-voltage measurement due to relatively many charged paricles and roughness. Films show smooth surface state and good C-V characteristics with increasing oxygen partial pressure. It was thought that this trend in C-V characteristics was due to the amount of mobile ionic charge within $CeO_2$ films. The composition of films show oxygen excess, that is, O/$Ce_2$ ratio of films was 2.22~2.42 range and leakage current of films show $10^{-7}~10^{-8}A$order at 100 kV/cm.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.2
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• pp.349-354
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• 2007

In this work, we investigated etching characteristics of $HfO_2$ thin film and Si using inductive coupled plasma(ICP) system. The ion energy distribution functions in an ICP system was analyzed by quadrupole mass spectrometer(QMS) with an electrostatic ion energy analyzer. The maximum etch rate of $HfO_2$ thin film is 85.5 nm/min at a $BCl_3/(BCl_3+Ar)$ of 20 % and decreased with further addition of $BCl_3$ gas. From the QMS measurements, the most dominant positive ion energy distributions(IEDS) showed a maximum at 20 % of $BCl_3$. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of $HfO_2$ over Si is 3.05 at a $O_2$ addition of 2 sccm into the $BCl_3/(BCl_3+Ar)$ of 20 % plasma.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.9
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• pp.611-615
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• 2001

Y$_2$O$_3$ thin films have been proposed as a buffering insulator of metal/ferroelectric/insulator/semiconductor field effect transistor(MFISFET)-type ferroelectric random access memory (FRAM). In this study, $Y_2$O$_3$ thin films were etched with inductively coupled plasma(ICP). The etch rates of $Y_2$O$_3$ and YMnO$_3$, and the selectivity of $Y_2$O$_3$ to YMnO$_3$ were investigated by varying Cl$_2$/(Cl$_2$＋Ar) gas mixing ratio. The maximum etch rate of $Y_2$O$_3$, and the selectivity of $Y_2$O$_3$ to YMnO$_3$ were 302$\AA$/min, and 2.4 at Cl$_2$/(Cl$_2$＋Ar) gas mixing ratio of 0.2 respectively. Optical emission spectroscopy(OES) was used to understand the effects of gas combination on the etch rate of $Y_2$O$_3$ thin film. The surface reaction of the etched $Y_2$O$_3$ thin films was investigated by x-ray photoelectron spectroscopy (XPS). XPS analysis confirmed that there was chemical reaction between Y and Cl. This result was confirmed by secondary ion mass spectroscopy(SIMS) analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.131-135
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• 2003

Zinc Oxide(ZnO) thin films on Si (100) substrate were deposited by RF magnetron sputter with changing sputtering conditions such as argon/oxygen gas ratios, RF power, and substrate temperature, chamber pressure and target-substrate distance. To analyze a crystallographic properties of the films, $\theta/2\theta$ mode X-ray diffraction, SEM, and AFM analyses. C-axis preferred orientation, resistivity, and surface roughness highly depended on $Ar/O_2$ gas ratios. The resistivity of ZnO thin films rapidly increased with increasing oxygen ratio and the resistivity value of $9{\times}10^7{\Omega}cm$ was obtained at a working pressure of 10 mTorr with $Ar/O_2$=50/50. The surface roughness was also improved with increasing oxygen ratio and the ZnO films deposited with $Ar/O_2$=50/50 showed the excellent roughness value of $28.7{\AA}$.

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.11-15
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• 2000

This paper presents a process optimization of antireflection (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a double-layer AR(DLAR) coating of MgFe$_2$/GeO$_2$. We investigated GeO$_2$ films as an AR layer because they have a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown GeO$_2$ film showed deposition temperature strong dependence. The GeO$_2$ at 400$\^{C}$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgFe$_2$film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04% in the wavelengths ranged from 0.4 ㎛ to 1.1 ㎛. Solar cells with a structure of MgFe$_2$/GeO$_2$/Ag/N$\^$+//p-type Si/P$\^$+//Al were investigated with the without DLAR coatings. We achieved the efficiency of solar cells greater than 15% with 3.12% improvement with DLAR coatings. Further details about MgFe$_2$,GeO$_2$ films, and cell fabrication parameters are presented in this paper.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.175-175
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• 2010

The etching characteristics with etch rate of ITO thin films in an $O_2/BCl_3$/Ar plasma were investigated. The etch rate of ITO thin films increased with increasing $O_2$ content from 0 to 10 % in $BCl_3$/Ar plasma, whereas that of ITO decreased with increasing $O_2$ content from 10 % to 30 % in $BCl_3$/Ar plasma. The maximum etch rate of 65.9 nm/min for the ITO thin films was obtained at 10 % $O_2$ addition. The etch conditions were the RF power of 500 W, bias power of 200 W, and process pressure of 2 Pa. The analysis of x-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of ITO thin films and etch species.