• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.23 no.2
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• pp.83-87
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• 2017

This study was conducted to determine types of oxygen transmission rate (OTR) films suitable for modified atmosphere (MA) storage treatment of strawberries (cv. 'Maehyang') for export and examination related changes in quality of strawberries during simulated shipping distribution conditions ($2^{\circ}C$ for $10days{\sim}8^{\circ}C$ for 11 days). Strawberries were packed by 1,300, 10,000, 20,000, and $30,000cc/m^2{\cdot}day{\cdot}atm$ OTR films for MA storage treatment and perforated film as the control for MAP. Fresh weight loss rate was less than 0.5% in OTR films except for the perforated film. Carbon dioxide and oxygen content in packages prevailed in permissible range for strawberries under recommended CA/MA conditions (i.e., $CO_2$: 15~20%, $O_2$: 5~10%) at 10,000 cc, 20,000 cc, and 30,000 cc OTR films. Ethylene content in OTR films did not reveal significant differences during storage. The 1,300 cc OTR film revealed highest off-flavor and lowest fungal incidence rate by sensory evaluation. The firmness, soluble solids, and visual quality were preserved the highest at 10,000 cc OTR film. In conclusion, 10,000 cc OTR film preserved the highest quality and extended shelf-life by 13 days if compared with conventional distribution conditions.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.160-160
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• 2010

Organic electronic devices require a passivation layer to ensure sufficient lifetime. Specifically, flexible organic electronic devices need a barrier layer that transmits less than $10^{-6}\;g/m^2/day$ of water and $10^{-5}\;g/m^2/day$ of oxygen. To increase the lifetime of organic electronic device, therefore, it is indispensable to protect the organic materials from water and oxygen. Severe groups have reported on multi-layerd barriers consisting inorganic thin films deposited by plasma enhenced chemical deposition (PECVD) or sputtering. However, it is difficult to control the formation of granular-type morphology and microscopic pinholes in PECVD and sputtering. On the contrary, atomic layer deoposition (ALD) is free of pinhole, highly uniform, conformal films and show good step coverage. In this study, the passivation layer was deposited using single-process PEALD. The passivation layer, in our case, was a bilayer system consisting of $Al_2O_3$ films and a $TiO_2$ buffer layer on a poly (ether sulfon) (PES) substrate. Because the deposition temperature and plasma power have a significant effect on the properties of the passivation layer, the characteristics of the $Al_2O_3$ films were investigated in terms of density under different deposition temperatures and plasma powers. The effect of the $TiO_2$ buffer layer also was also addressed. In addition, the water vapor transmission rate (WVTR) and organic light-emitting diode (OLEDs) lifetime were measured after forming a bilayer composed of $Al_2O_3/TiO_2$ on a PES substrate.

• Bulletin of the Korean Chemical Society
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• v.28 no.4
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• pp.533-537
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• 2007

This paper describes the heteroepitaxial growth of single-crystalline 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350 oC for micro/nanoelectromechanical system (M/NEMS) applications, in which hexamethyldisilane (HMDS, Si2(CH3)6) was used as a safe organosilane single-source precursor. The HMDS flow rate was 0.5 sccm and the H2 carrier gas flow rate was 2.5 slm. The HMDS flow rate was important in obtaing a mirror-like crystalline surface. The growth rate of the 3C-SiC film in this work was 4.3 μm/h. A 3C-SiC epitaxial film grown on the Si (100) substrate was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Raman scattering, respectively. These results show that the main chemical components of the grown film were single-crystalline 3C-SiC layers. The 3C-SiC film had a very good crystal quality without twins, defects or dislocations, and a very low residual stress.

• Bulletin of the Korean Chemical Society
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• v.33 no.11
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• pp.3761-3766
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• 2012

$Ag_2Se$-Graphene/$TiO_2$ composite was synthesized by a facile sonochemical method. The as-prepared products were characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM) with energy dispersive X-ray (EDX) analysis, transmission electron microscopy (TEM) and UV-vis diffuse reflectance spectrophotometer. During the reaction, both of the reduction of graphene oxide and loading of $Ag_2Se$ and $TiO_2$ particles were achieved. The as-prepared $Ag_2Se$-Graphene/$TiO_2$ composites possessed great adsorptivity of dyes, extended light absorption range, and efficient charge separation properties simultaneously. Hence, in the photodegradation of rhodamine B (Rh.B), a significant enhancement in the reaction rate was observed with $Ag_2Se$-Graphene/$TiO_2$ composites, compared to the pure $TiO_2$. The high activity can be attributed to the synergetic effects of high charge mobility, and red shift in absorption edge of $Ag_2Se$-Graphene/$TiO_2$ composites.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.3
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• pp.473-478
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• 2006

High quality indium tin oxide (ITO) thin films have been prepared by DC magnetron sputtering technique. By controlling the deposition parameters such as substrate temperature and oxygen flow rate, we were able to minimize the negative ion damage during the deposition. Films pr데ared under such conditions were found to posses an excel]ent electrical resistivity of $1.6\times10^{-4}{\Omega}cm$ and also found to have a optical transmission above 90%. We also observe that, increasing the oxygen now rate above 4 sccm leads to an increase in electrical resistivity of the films while the transmission was found to saturate with the increase in the oxygen gas flow.

• Journal of the Korean Chemical Society
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• v.23 no.5
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• pp.329-337
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• 1979

The water-vapour transmission ratios (WVTR) of the various commercial polymer films have been investigated at the constant pressure and relative humidity (RH). Water proofnesses, the reciprocals of WVTR for the various samples, were determined using a cup device and maintaining the sample films at a constant temperature ($40{\pm}1^{\circ}C$) and a constant R. H ($90{\pm}2%$) for 24 hours. The following order of the relative proofness was observed; oriented polypropyrene (O.PP) > high density polyethylene (HDPE, Inflation) > high density polyethylene (HDPE. T-die) > casted polypropylene (C. PP) > nonoriented polyester (N. PET) > low density polyethylene (LDPE) > oriented polyester (O. PET) > rigid polyvinyl chloride (Rigid PVC) > semirigid polyvinyl chloride (Semirigid PVC) > nonrigid polyvinyl chloride (Nonrigid PVC) > oriented nylon (O. Nylon) > nonoriented nylon (N. Nylon). And water proofness order was also observed to decrease with the temperature rising; HDPE (T-die) > C. PP > O. PET > LDPE > O. Nylon. The activation energies of LDPE, HDPE (T-die), C. PP, O. PET and O.Nylon films were 12.0, 11.1, 11.4, 11.7, 14.1 kcal/mole, respectively. The WVTR's of the films were increased with the polarity of polymer and the addition of plasticizer in PVC, decreased with the increase of the film thickness and mechanical orientation. The WVTR's of the laminated films O. PP/LDPE, N.Nylon/LDPE, C.PP/LDPE were also more dependent on the film thickness than the WVTR's of the single films.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.973-976
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• 2006

In this paper, the inorganic multi-layer encapsulation of thin film was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam, Sputter, inorganic multi-layer thin-film encapsulation was deposited onto the Ethylene Terephthalate(PET) and their interface properties between inorganic and organic layer were investigated. In this investigation, the SiON $SiO_2$ and parylene layer showed the most suitable properties. Under these conditions, the water vapor transmission rate (WVTR) for PET can be reduced from level of $0.57g/m^2/day$ (bare substrate) to $1^{\ast}10^{-5}g/m^2/day$ after application of a SiON and $SiO_2$ layer. These results indicate that the $PET/SiO_2/SiON/Parylene$ barrier coatings have high potential for flexible organic light-emitting diode(OLED) applications.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.35-35
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• 2001

agnesium Oxide (MgO) with a NaCI structure is well known to exhibit high secondary electron emission, excellent high temperature chemical stability, high thermal conductance and electrical insulating properties. For these reason MgO films have been widely used for a buffer layer of high $T_c$ superconducting and a protective layer for AC-plasma display panels to improve discharge characteristics and panel lifetime. Up to now MgO films have been synthesized by lE-beam evaporation, Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapor Deposition (MOCVD), however there have been some limitations such as low film density and micro-cracks in films. Therefore magnetron sputtering process were emerged as predominant method to synthesis high density MgO films. In previous works, we designed and manufactured unbalanced magnetron source with high power density for the deposition of high quality MgO films. The magnetron discharges were sustained at the pressure of O.lmtorr with power density of $110W/\textrm{cm}^2$ and the maximum deposition rate was measured at $2.8\mu\textrm{m}/min$ for Cu films. In this study, the syntheses of MgO films were carried out by unbalanced magnetron sputtering with various $O_2$ partial pressure and specially target power densities, duty cycles and frequency using pulsed DC power supply. And also we investigated the plasma states with various $O_2$ partial pressure and pulsed DC conditions by Optical Emission Spectroscopy (OES). In order to confirm the relationships between plasma states and film properties such as microstructure and secondary electron emission coefficient were analyzed by X-Ray Diffraction(XRD), Transmission Electron Microscopy(TEM) and ${\gamma}-Focused$ Ion Beam (${\gamma}-FIB$).

• Progress in Superconductivity
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• v.8 no.2
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• pp.175-180
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• 2007

High temperature superconductor $YBa_2Cu_3O_{7-x}$ (YBCO) films have been grown by in-situ electron beam evaporation on artificial metal tapes such as ion-beam assisted deposition (IBAD) and rolling assisted biaxially textured substrates (RABiTS). Deposition rate of the YBCO films is $10{\sim}100{\AA}/sec$. X-ray diffraction shows that the films are grown epitaxially but have inter-diffusion phases, like as $BaZrO_3\;or\;BaCeO_3$, at their interfaces between YBCO and yttrium-stabilized zirconia (YSZ) or $CeO_2$, respectively. Secondary ion mass spectroscopy depth profile of the films confirms diffused region between YBCO and the buffer layers, indicating that the growth temperature ($850{\sim}900^{\circ}C$) is high enough to cause diffusion of Zr and Ba. The films on both the substrates show four-fold symmetry of in-plane alignment but their width in the -scan is around $12{\sim}15^{\circ}$. Transmission electron microscopy shows an interesting interface layer of epitaxial CuO between YBCO and YSZ, of which growth origin may be related to liquid flukes of Ba-Cu-O. Resistivity vs temperature curves of the films on both substrates were measured. Resistivity at room temperature is between 300 and 500 cm, the extrapolated value of resistivity at 0 K is nearly zero, and superconducting transition temperature is $85{\sim}90K$. However, critical current density of the films is very low, ${\sim}10^3A/cm^2$. Cracking of the grains and high-growth-temperature induced reaction between YBCO and buffer layers are possible reasons for this low critical current density.

• Clean Technology
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• v.28 no.2
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• pp.147-154
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• 2022

Titanate nanotubes (TNTs) were synthesized via alkaline hydrothermal treatment using commercial TiO₂ nanoparticles (P25). The TNTs were prepared at various TiO₂/NaOH ratios, hydrothermal temperatures, and hydrothermal times. The synthesized catalysts were characterized by X-ray diffraction, field-emission scanning electron microscopy, N₂ adsorption-desorption isotherms, field-emission transmission electron microscopy, and ultraviolet-visible spectroscopy. TNTs were generated upon a decrease in the TiO₂/NaOH ratio due to the dissolution of TiO₂ in the alkaline solution and the generation of new Ti-O-Ti bonds to form titanate nanoplates and nanotubes. The hydrothermal treatment temperature and time were important factors for promoting the nucleation and growth of TNTs. The TNT catalyst with the largest surface area (389.32 m² g^-1) was obtained with a TiO₂/NaOH ratio of 0.25, a hydrothermal treatment temperature of 130 ℃, and a hydrothermal treatment time of 36 h. Additionally, we investigated the photocatalytic activity of methyl violet 2B (MV) over the TNT catalysts under UV irradiation and found that the degradation efficiencies of the TNTs were higher than that of P25. Among the TNT catalysts, the TNT catalyst that was hydrothermally synthesized for 36 h (TNT 36 h) exhibited a 96.9% degradation efficiency and a degradation rate constant that was 4.8 times higher than P25 due to its large surface area, which allowed for more contact between the MV molecules and TNT surfaces and facilitated rapid electron transfer. Finally, these results were correlated with the specific surface area.