• Title/Summary/Keyword: $O_2$ sensor

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Expression of the cAMP Phosphodiesterase 7A1 Gene by Endoplasmic Reticulum Stress (소포체스트레스에 의한 cAMP phosphodiesterase 7A1 유전자의 발현)

  • Kwon, Ki-Sang;Kwon, Young-Sook;Kwon, O-Yu
    • Journal of Life Science
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    • v.22 no.2
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    • pp.281-284
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    • 2012
  • This study demonstrated that upregulation of gene expression of endoplasmic reticulum (ER) stress chaperones (Bip, ERp29, calnexin, and PDI), ER stress sensors (PERK, ATF6, and Ire1), and cAMP phosphodiesterase 7A1 (cAMP PDE7A1) was induced by ER stresses in FRTL5 cells. While removing A23187 from the culture medium restored upregulation of cAMP PDE7A1 gene expression, removal of thapsigargin did not recover its expression. In addition, cAMP PDE7A1 gene expression was strongly inhibited by treatment with A23187 combined with thyroid stimulating hormone (TSH). The results are the first to show that ER stress induces cAMP PDE7A1 gene expression.

Planar Type Flexible Piezoelectric Thin Film Energy Harvester Using Laser Lift-off

  • Noh, Myoung-Sub;Kang, Min-Gyu;Yoon, Seok Jin;Kang, Chong-Yun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.489.2-489.2
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    • 2014
  • The planar type flexible piezoelectric energy harvesters (PEH) based on PbZr0.52Ti0.48O3 (PZT) thin films on the flexible substrates are demonstrated to convert mechanical energy to electrical energy. The planar type energy harvesters have been realized, which have an electrode pair on the PZT thin films. The PZT thin films were deposited on double side polished sapphire substrates using conventional RF-magnetron sputtering. The PZT thin films on the sapphire substrates were transferred by PDMS stamp with laser lift-off (LLO) process. KrF excimer laser (wavelength: 248nm) were used for the LLO process. The PDMS stamp was attached to the top of the PZT thin films and the excimer laser induced onto back side of the sapphire substrate to detach the thin films. The detached thin films on the PDMS stamp transferred to adhesive layer coated on the flexible polyimide substrate. Structural properties of the PZT thin films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). To measure piezoelectric power generation characteristics, Au/Cr inter digital electrode (IDE) was formed on the PZT thin films using the e-beam evaporation. The ferroelectric and piezoelectric properties were measured by a ferroelectric test system (Precision Premier-II) and piezoelectric force microscopy (PFM), respectively. The output signals of the flexible PEHs were evaluated by electrometer (6517A, Keithley). In the result, the transferred PZT thin films showed the ferroelectric and piezoelectric characteristics without electrical degradation and the fabricated flexible PEHs generated an AC-type output power electrical energy during periodically bending and releasing motion. We expect that the flexible PEHs based on laser transferred PZT thin film is able to be applied on self-powered electronic devices in wireless sensor networks technologies. Also, it has a lot of potential for high performance flexible piezoelectric energy harvester.

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Fabrication and Characterization of Porous Silicon-based Urea Sensor Syst (다공질 실리콘을 이용한 요소검출용 바이오 센서 제작)

  • Jin, Joon-Hyung;Kang, Chul-Goo;Kang, Moon-Sik;Song, Min-Jung;Min, Nam-Ki;Hong, Seok-In
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.2003-2005
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    • 2002
  • 바이오 마이크로 시스템 및 바이오 MEMS 분야, 특히 실리콘을 기질로 하는 바이오 센서 제작에서 반도체 공정 기술은 센서의 대량 생산과 초소형화를 위해서 반드시 필요한 기술이다. 그러나, 감지전극의 마이크로화에 따른 센서의 감도 및 안정성 저하 문제는 해결해야 할 과제이다. 최근, 다공질 실리콘이 갖는 대면적이 실리콘 기질과 생체 고분자 (예: 단백질, 핵산 등) 간의 결합력을 향상시킬 수 있음이 알려지면서, 바이오 센서 분야에서, 새로운 형태의 드랜스듀서 재료로서의 다공질 실리콘에 대한 논의가 활발히 전개되고 있으며 또한, ISFET (Ion-Selective Field-Effect Transistors) 와는 달리 다공질 실리콘 층은 저항이 크기 때문에 센서 제작 과정에서의 부가적인 절연막을 필요로 하지 않는다. 본 연구에서는, 백금을 증착한 다공질 실리콘 표면에 전도성 고분자로서 Polypyrrole (PPy) 필름과 생체 고분자 물질로서 Urease를 각각 전기화학적으로 흡착하였다. 다공질 실리콘 층의 형성을 위해 테플론 소재의 전기화학 전지에 불산 (49%), 에탄올 (95%), $H_2O$ 혼합 용액을 넣고 실리콘 웨이퍼에 일정시간 수 mA의 산화 전류를 흘려주었으며, 약 $200{\AA}$의 티타늄 박막과 $200{\AA}$의 백금 박막을 RF 스퍼터링하여 작업 전극을 제작하였고, 백금 박막 및 Ag를 기화 증착하여 제작한 Ag/AgCl 박막을 각각 상대 전극과 기준전극으로 하였다. 박막 전극의 표면 분석을 위해 SEM (Scanning Electron Microscopy), EDX (Energy Dispersive X-ray spectroscopy) 등을 이용하였다. 제작된 요소 센서로부터 요소 농도 범위 0.01 mmol/L ${\sim}$ 100 mmol/L에서 약 0.2 mA/decade의 감도를 얻었다.

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The Relationship between Oxygen Saturation and Color Alteration of a Compromised Skin Flap: Experimental Study on the Rabbit

  • Prasetyono, Theddeus O.H.;Adianto, Senja
    • Archives of Plastic Surgery
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    • v.40 no.5
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    • pp.505-509
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    • 2013
  • Background The aim of this study was to collect important data on the time of oxygen saturation change in relation to skin flap color alteration using non-invasive pulse oximetry to evaluate its ability to provide continuous monitoring of skin flap perfusion. Methods An experimental study on the monitoring of blood perfusion of 20 tube-island groin flaps of 10 male New Zealand rabbits was performed using pulse oximetry. The animals were randomly assigned to one of two groups representing a blockage of either arterial or venous blood flow. The oxygen saturation change and clinical color alteration were monitored from the beginning of vessel clamping until the saturation became undetectable. The result was analyzed by the t-test using SSPS ver. 10.0. Results The mean times from the vessel clamping until the saturation became undetectable were $20.19{\pm}2.13$ seconds and $74.91{\pm}10.57$ seconds for the artery and vein clamping groups, respectively. The mean time of the clinical alteration from the beginning of vein clamping was $34.5{\pm}11.72$ minutes, while the alteration in flaps with artery clamping could not be detected until 2.5 hours after clamping. Conclusions The use of neonate-type reusable flex sensor-pulse oximetry is objective and effective in early detection of arterial and vein blockage. It provides real-time data on vessel occlusion, which in turn will allow for early salvaging. The detection periods of both arterial occlusion and venous congestion are much earlier than the color alteration one may encounter clinically.

A Simulation of Vehicle Parking Distribution System for Local Cultural Festival with Queuing Theory and Q-Learning Algorithm (대기행렬이론과 Q-러닝 알고리즘을 적용한 지역문화축제 진입차량 주차분산 시뮬레이션 시스템)

  • Cho, Youngho;Seo, Yeong Geon;Jeong, Dae-Yul
    • The Journal of Information Systems
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    • v.29 no.2
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    • pp.131-147
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    • 2020
  • Purpose The purpose of this study is to develop intelligent vehicle parking distribution system based on LoRa network at the circumstance of traffic congestion during cultural festival in a local city. This paper proposes a parking dispatch and distribution system using a Q-learning algorithm to rapidly disperse traffics that increases suddenly because of in-bound traffics from the outside of a city in the real-time base as well as to increase parking probability in a parking lot which is widely located in a city. Design/methodology/approach The system get information on realtime-base from the sensor network of IoT (LoRa network). It will contribute to solve the sudden increase in traffic and parking bottlenecks during local cultural festival. We applied the simulation system with Queuing model to the Yudeung Festival in Jinju, Korea. We proposed a Q-learning algorithm that could change the learning policy by setting the acceptability value of each parking lot as a threshold from the Jinju highway IC (Interchange) to the 7 parking lots. LoRa Network platform supports to browse parking resource information to each vehicle in realtime. The system updates Q-table periodically using Q-learning algorithm as soon as get information from parking lots. The Queuing Theory with Poisson arrival distribution is used to get probability distribution function. The Dijkstra algorithm is used to find the shortest distance. Findings This paper suggest a simulation test to verify the efficiency of Q-learning algorithm at the circumstance of high traffic jam in a city during local festival. As a result of the simulation, the proposed algorithm performed well even when each parking lot was somewhat saturated. When an intelligent learning system such as an O-learning algorithm is applied, it is possible to more effectively distribute the vehicle to a lot with a high parking probability when the vehicle inflow from the outside rapidly increases at a specific time, such as a local city cultural festival.

Evaluation of Remote Handling Performance with the Polarized Stereo Monitoring System (편광방식 스테레오 모니터링 시스템의 원격조작성 평가)

  • Lee, Yong-Bum;Lee, Nam-Ho;Park, Soon-Yong;Lee, Jong-Min;Jin, Sung-Il
    • Journal of Sensor Science and Technology
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    • v.5 no.5
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    • pp.55-62
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    • 1996
  • This paper describes development of Polarized Stereo Monitoring System (KAERI-PSM) and compares the remote handling performance of KAERI-PSM with that of other monitoring systems, electric shutter type stereo monitoring system and general TV monitoring system. Remote handling performance is evaluated by total time and error number on remote operating experiments. Four kinds of remote handling experiments are carried out through 1) directly 2) general TV 3) electric shutter type monitor, and 4) KAERI-PSM. In these experiments six employees are participated and PUMA robot with force-torque reflectional joystic is used. The result of experiments show that camera angle against object is significant factor in monitoring and stereo monitoring system give more performance benifits in terms of accuracy and speed of remote handling operation than general TV monitoring system. In comparision of the polarized and electric shutter type stereo monitoring system, both have similar accuracy and speed for remote handling operation, but the former is superior in image quality and stability of the performance.

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Characteristics of a planar Bi-Sb multijunction thermal converter with Pt-heater (백금 히터가 내장된 평면형 Bi-Sb 다중접합 열전변환기의 특성)

  • Lee, H.C.;Kim, J.S.;Ham, S.H.;Lee, J.H.;Lee, J.H.;Park, S.I.;Kwon, S.W.
    • Journal of Sensor Science and Technology
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    • v.7 no.3
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    • pp.154-162
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    • 1998
  • A planar Bi-Sb multijunction thermal converter with high thermal sensitivity and small ac-dc transfer error has been fabricated by preparing the bifilar thin film Pt-heater and the hot junctions of thin film Bi-Sb thermopile on the $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$-diaphragm, which functions as a thermal isolation layer, and the cold junctions on the dielectric membrane supported with the Si-substrate, which acts as a heat sink, and its ac-dc transfer characteristics were investigated with the fast reversed dc method. The respective thermal sensitivities of the converter with single bifilar heater were about 10.1 mV/mW and 14.8 mV/mW in the air and vacuum, and those of the converter with dual bifilar heater were about 5.1 mV/mW and 7.6 mV/mW, and about 5.3 mV/mW and 7.8 mV/mW in the air and vacuum for the inputs of inside and outside heaters, indicating that the thermal sensitivities in the vacuum, where there is rarely thermal loss caused by gas, are higher than those in the air. The ac-dc voltage and current transfer difference ranges of the converter with single bifilar heater were about ${\pm}1.80\;ppm$ and ${\pm}0.58\;ppm$, and those of the converter with dual bifilar heater were about ${\pm}0.63\;ppm$ and ${\pm}0.25\;ppm$, and about ${\pm}0.53\;ppm$ and ${\pm}0.27\;ppm$, respectively, for the inputs of inside and outside heaters, in the frequency range below 10 kHz and in the air.

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Endpoint Detection in Semiconductor Etch Process Using OPM Sensor

  • Arshad, Zeeshan;Choi, Somang;Jang, Boen;Hong, Sang Jeen
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.237.1-237.1
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    • 2014
  • Etching is one of the most important steps in semiconductor manufacturing. In etch process control a critical task is to stop the etch process when the layer to be etched has been removed. If the etch process is allowed to continue beyond this time, the material gets over-etched and the lower layer is partially removed. On the other hand if the etch process is stopped too early, part of the layer to be etched still remains, called under-etched. Endpoint detection (EPD) is used to detect the most accurate time to stop the etch process in order to avoid over or under etch. The goal of this research is to develop a hardware and software system for EPD. The hardware consists of an Optical Plasma Monitor (OPM) sensor which is used to continuously monitor the plasma optical emission intensity during the etch process. The OPM software was developed to acquire and analyze the data to perform EPD. Our EPD algorithm is based on the following theory. As the etch process starts the plasma generated in the vacuum is added with the by-products from the etch reactions on the layer being etched. As the endpoint reaches and the layer gets completely removed the plasma constituents change gradually changing the optical intensity of the plasma. Although the change in optical intensity is not apparent, the difference in the plasma constituents when the endpoint has reached leaves a unique signature in the data gathered. Though not detectable in time domain, this signature could be obscured in the frequency spectrum of the data. By filtering and analysis of the changes in the frequency spectrum before and after the endpoint we could extract this signature. In order to do that, first, the EPD algorithm converts the time series signal into frequency domain. Next the noise in the frequency spectrum is removed to look for the useful frequency constituents of the data. Once these useful frequencies have been selected, they are monitored continuously in time and using a sub-algorithm the endpoint is detected when significant changes are observed in those signals. The experiment consisted of three kinds of etch processes; ashing, SiO2 on Si etch and metal on Si etch to develop and evaluate the EPD system.

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The fabrication and sensing characteristics of conducting polymer sensors for Measurement of VOCs (Volatile organic compounds) gas (휘발성 유기 화합물 가스 측정을 위한 전도성 고분자 센서의 제조(製造) 및 감응(感應) 특성(特性))

  • Paik, J.H.;Hwang, H.R.;Roh, J.G.;Huh, J.S.;Lee, D.D.;Lim, J.O.;Byun, H.G.
    • Journal of Sensor Science and Technology
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    • v.10 no.2
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    • pp.125-133
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    • 2001
  • Conducting polymer sensors show high sensitivity when exposed to volatile organic compounds gases at room temperature. The 8 sensor array using by polypyrrole and polyaniline has been fabricated by chemical polymerization for measuring sensing characteristics of VOCs gases. Conducting polymer was polymerized by using distilled pyrrole, aniline as a monomer and ammonium persulfate (APS) as an oxidant and dodecylbenzene sulfonic acid (DBSA) as a dopant. Dedoped film was synthesized by reverse voltage and redoped film was synthesized by using 1-octanesulfonic acid sodium salt as another dopant in electrochemical cell. The sensitivity and reversibility were influenced by doping, dedoping, redoping and thickness for the polypyrrole and polyaniline. We investigated the relation between the structure of conducting polymer and sensitivity of these sensors through the analysis of scanning electron microscope (SEM), scanning probe microscope (SPM) and $\alpha$-step.

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Analysis of Shear Stress Type Piezoresistive Characteristics in Silicon Diaphragm Structure (실리콘 다이아프램 구조에서 전단응력형 압전저항의 특성 분석)

  • Choi, Chae-Hyoung;Choi, Deuk-Sung;Ahn, Chang-Hoi
    • Journal of the Microelectronics and Packaging Society
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    • v.25 no.3
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    • pp.55-59
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    • 2018
  • In this paper, we investigated the characteristics of shear stress type piezoresistor on a diaphragm structure formed by MEMS (Microelectromechanical System) technology of silicon-direct-bonding (SDB) wafers with Si/$SiO_2$/Si-sub. The diaphragm structure formed by etching the backside of the wafer using a TMAH aqueous solution can be used for manufacturing various sensors. In this study, the optimum shape condition of the shear stress type piezoresistor formed on the diaphragm is found through ANSYS simulation, and the diaphragm structure is formed by using the semiconductor microfabrication technique and the shear stress formed by boron implantation. The characteristics of the piezoelectric resistance are compared with the simulation results. The sensing diaphragm was made in the shape of an exact square. It has been experimentally found that the maximum shear stress for the same pressure at the center of the edge of the diaphragm is generated when the structure is in the exact square shape. Thus, the sensing part of the sensor has been designed to be placed at the center of the edge of the diaphragm. The prepared shear stress type piezoresistor was in good agreement with the simulation results, and the sensitivity of the piezoresistor formed on the $2200{\mu}m{\times}2200{\mu}m$ diaphragm was $183.7{\mu}V/kPa$ and the linearity of 1.3 %FS at the pressure range of 0~100 kPa and the symmetry of sensitivity was also excellent.