• Title/Summary/Keyword: $O_2$ plasma treatment

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Sputter Deposition and Surface Treatment of $TiO_{2}$ films for Dye-Sensitized Solar Cells using Reactive RF Plasma (RF 스퍼터링 증착된 $TiO_{2}$ 박막의 염료감응형 태양전지 적용 연구)

  • Kim, Mi-Jeong;Seo, Hyun-Woong;Choi, Jin-Young;Jo, Jae-Suk;Kim, Hee-Je
    • 한국신재생에너지학회:학술대회논문집
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    • 2007.06a
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    • pp.309-312
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    • 2007
  • Sputter deposition followed by surface treatment was studied using reactive RF plasma as a method for preparing titanium oxide($TiO_{2}$) films on indium tin oxide(ITO) coated glass substrate for dye-sensitized solar cells(DSSCs). Anatase structure $TiO_{2}$ films deposited by reactive RF magnetron sputtering under the conditions of $Ar/O_{2}$(5%) mixtures, RF power of 600W and substrate temperature of $400^{\circ}C$ were surface-treated by inductive coupled plasma(ICP) with $Ar/O_{2}$ mixtures at substrate temperature of $400^{\circ}C$, and thus the films were applied to the DSSCs, The $TiO_{2}$ Films made on these exhibited the BET specific surface area of 95, the pore volume of $0.3cm^{2}$ and the TEM particle size of ${\sim}25$ nm. The DSSCs made of this $TiO_{2}$ material exhibited an energy conversion efficiency of about 2.25% at $100mW/cm^{2}$ light intensity.

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Plasma nitridation of atomic layer deposition-Al2O3 by NH3 in PECVD

  • Cha, Ham cho rom;Cho, Young Joon;Chang, Hyo Sik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.304.1-304.1
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    • 2016
  • We have investigated the effect of plasma nitridation of atomic layer deposited-Al2O3 films of monocrystalline Si wafers and the thermal properties of nitridated Al2O3 films. Nitridation was performed on Al2O3 to form aluminum oxynitride (AlON) using NH3 plasma treatment in a plasma-enhanced chemical vapor deposition and it was conducted at temperature of $400^{\circ}C$ with various plasma power condition. After nitridation, we performed firing and forming gas annealing (FGA). For each step, we have observed the minority carrier lifetime and the implied Voc by using quasi-Steady-State photoconductance (QSSPC). We confirmed a tendency to increase the minority carrier lifetime and the implied Voc after the nitridation. On the other hand, the minority carrier lifetime and the implied Voc was decreased after Firing and forming gas annealing (FGA). To get more information, we studied properties of the plasma treated Al2O3 films by using Secondary Ion Mass Spectroscopy (SIMS) and X-ray Photoelectron Spectroscopy (XPS).

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Surface Modification of TiO2 by Atmospheric Pressure Plasma (대기압 플라즈마를 이용한 TiO2 광촉매의 효율향상을 위한 표면 개질 연구)

  • Cho, S.J.;Jung, C.K.;Kim, S.S.;Boo, J.H.
    • Journal of the Korean Vacuum Society
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    • v.19 no.1
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    • pp.22-27
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    • 2010
  • To improve surface wettability, each sample was treated by atmospheric pressure plasma (APP) using dielectric barrier discharge (DBD) system. Argon and oxygen gases were used for treatment gas to modify the $TiO_2$ surface by APP with RF power range from 50 to 200 W. Water contact angle was decreased from $20^{\circ}$ to $10^{\circ}$ with argon only. However, water contact angle was decreased from $20^{\circ}$ to < $1^{\circ}$ with mixture of argon and oxygen. Water contact angle with $O_2$ plasma was lower than water contact angle with Ar plasma at the same RF power. It seems to be increasing the polar force of $TiO_2$ surface. Also, analysis result of X-ray photoelectron spectra (XPS) shows the increase of intensity of O1s shoulder peak, resulting in increasing of surface wettability by APP. Moreover, each water contact angle increased according to increase past time. However, contact angle increase with plasma treatment was lower than without plasma treatment. Additionally, the efficiency of $TiO_2$ photocatalyst was improved by plasma surface-treatment through the degradation experiment of phenol.

Optimized O2 Plasma Surface Treatment for Uniform Sphere Lithography on Hydrophobic Photoresist Surfaces

  • Yebin Ahn;Jongchul Lee;Hanseok Kwon;Jungbin Hong;Han-Don Um
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.37 no.2
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    • pp.188-194
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    • 2024
  • This paper introduces an optimized oxygen (O2) plasma surface treatment technique to enhance sphere lithography on hydrophobic photoresist surfaces. The focus is on semiconductor manufacturing, particularly the creation of finer structures beyond the capabilities of traditional photolithography. The key breakthrough is a method that makes substrate surfaces hydrophilic without altering photoresist patterns. This is achieved by meticulously controlling the O2 plasma treatment duration. The result is the consistent formation of nano and microscale patterns across large areas. From an academic perspective, the study deepens our understanding of surface treatments in pattern formation. Industrially, it heralds significant progress in semiconductor and precision manufacturing sectors, promising enhanced capabilities and efficiency.

Influence of Inductive Coupled Plasma Treatment and SnO2 Deposition on the Properties of Polycarbonate (유도결합플라즈마 표면 처리 및 SnO2 증착에 따른 폴리카보네이트 특성 연구)

  • Eom, Tae-Young;Choi, Dong-Hyuk;Son, Dong-Il;Eom, Tae-Yong;Kim, Daeil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.3
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    • pp.156-159
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    • 2018
  • Inductively coupled plasma (ICP) treatment with argon and a mixture of argon and oxygen gases has been used to modify the surface of polycarbonate (PC) substrates. The results showed that the surface contact angle was inversely proportional to the plasma discharge power and that the mixed-gas plasma (gas flow 10:10 sccm, discharge power 60 W) decreased the surface contact angle as low as $18.3^{\circ}$, indicating a large increase in the surface hydrophilicity. In addition, $SnO_2$ thin films deposited on the PC substrate effectively enhanced the ICP plasma treatment, and could also enhance the usefulness of PC in the inner parts of automobiles.

The Effect of the ZnO Nanorod Surface on the Optical Property (ZnO 나노막대의 표면이 광학적 특성에 미치는 영향)

  • Cho, Hyun-Min;Rhee, Seuk-Joo;Cho, Jae-Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.2
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    • pp.93-97
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    • 2010
  • We have studied the effect of the chemical composition of the ZnO nanorod surface on the optical characteristics. The surface was treated with H- and O-plasma at different surface temperatures. The chemical composition of the surface of the ZnO nanorod, being investigated by Auger Electron Spectroscopy(AES), was related to the Photoluminescence(PL) data reported in our previous results. The AES showed the opposite results for the $H_2$ and $O_2$ plasma treatments. The ratio of Zn to O on the surface of the ZnO nanorod increased in the case of $H_2$ plasma, while the composition rate of O increased after $O_2$ plasma treatment. The AES results seems to be correlated to the shift in PL peaks. The increase in the composition rate of Zn on the surface of ZnO nanorod is considered to cause the blue shift of the UV peak. On the contrary, the relative increase of O is considered to cause the red shift in PL peaks.

Work Function Changes on MgO Protective Layer after O2plasma Treatment from Ion-induced Secondary Electron Emission Coefficient (산소 플라즈마 처리후의 이차전자방출계수(γ)를 이용한 MgO 보호막의 일함수(φW) 변화)

  • Jeong, Jae-Cheon;Yu, SeGi;Cho, Jaewon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.3
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    • pp.259-263
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    • 2005
  • The changes in secondary electron emission coefficient(${\gamma}$) and work function($\Phi$$_{\omega}$) have been studied on the surface of MgO protective layer aster plasma(Ar. $O_2$) treatment using ${\gamma}$-focused ion beam (${\gamma}$-FIB) system. The values of ${\gamma}$ varied as follows: $O_2$-treated MgO > Ar-treated MgO > Non-treated MgO, and the work functions varied in the reverse order. The result indicates that both the physical etching and the chemical reaction of $O_2$-plasma removed the contaminating materials from the surface of MgO.

Experimental Study on Reduction of Temporal Dark Image Sticking on Bright Screen in AC-PDPs Using RF-Plasma Treatment on MgO layer

  • Park, Choon-Sang;Kim, Jae-Hyun;Tae, Heung-Sik
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.101-103
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    • 2009
  • Minimizing the residual impurity level on the MgO layer is the key factor for reducing temporal dark image sticking on bright screen. In this paper, to reduce the residual impurity level on the MgO layer of 50-in. full-HD ac-PDP with He (35%) - Xe (11%) contents, RF-plasma treatments on the MgO layer are adopted under various gases for plasma treatment. As a result of monitoring the difference in the display luminance between the before and after 5-min. sustain discharge with a square-type image at peak luminance, the Ar and Ar>$O_2$ plasma treatments can reduce the temporal dark image sticking on the bright screen in an ac-PDP.

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Effect of an temperatures of post-spray heat treatment on wear behavior of $8%Y_2O_3-ZrO_2$ coating

  • Chae, Y.H.;Kim, S.S.
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2002.10b
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    • pp.181-182
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    • 2002
  • Most recent, Plasma ceramic spray is used on parts of tribosystem, has been investigated on the tribological performance. The application of ceramic coatings by plasma spray has become essential in tribosystems to produce better wear resistance and longer life in various conditions. The purpose of this work was to investigate the wear behavior of $8%Y_2O_3-ZrO_2$ coating due to temperatures of post-spay heat treatment. The plasma-sprayed $8%Y_2O_3--Zirconia$ coating was idiscussed to know the relationship between phase transformations and temperatures of post- spray heat treatment. Wear tests was carried out with ball on disk type on normal load of 50N, 70N and 90N under room temperature. The transformation of phase and the value of residual stress were measured by X-ray diffraction method(XRD). Tribological characteristics and wear mechanisms of coatings was observed by SEM. The tribologieal wear performance was discussed a point of view for residual stress. Consequently. post-spray heat treatment plays an important role in decreasing residual stress. Residual stress in coating system has a significant influence on the wear mechanism of coating.

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Performance enhancement of Organic Thin Film Transistor by Ar Ion Beam treatment (Ar Ion Beam 처리를 통한 Organic Thin Film Transistor의 성능향상)

  • Jung, Suk-Mo;Park, Jae-Young;Yi, Moon-Suk
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.11
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    • pp.15-19
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    • 2007
  • This paper reports the effects of Ar ion beam surface treatment on a $SiO_2$ dielectric layer in organic thin film transistors. We compared the electrical properties of pentacene-based OTFTs, treated by $O_2$ plasma or Ar ion beam treatments and characterized the states of the surface of the dielectric by using atomic force microscopy and X-ray photoelectron spectroscopy. For the sample which received $O_2$ plasma treatment, the mobility increased significantly but the on/off current ratio was found very low. The Ar ion beam-treated sample showed a very high on/off current ratio as well as a moderately improved mobility. XPS data taken from the dielectric surfaces after each of treatments exhibit that the ratio of between Si-O bonds and O-Si-O bonds was much higher in the $O_2$ plasma treated surface than in the Ar ion beam treated surface. We believe that our surface treatment using an inert gas, Ar, carried out an effective surface cleaning while keeping surface damage very low, and also the improved device performances was achieved as a consequence of improved surface condition.