• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.336-339
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• 2003

The present report is the investigation of the effects of the HIP treatment on plasma-sprayed ceramic coating of $Al_2O_3$, $Al_2O_3-SiO_2$ on the metal substrate. These effects were characterized by phase identification, Vickers hardness measurement, and tensile test before and after HIPing.

• 한국자동차공학회논문집
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• 제12권3호
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• pp.83-90
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• 2004

Plasma/catalyst combined reactor was designed to overcome the limits of plasma and catalyst technologies. Optimum reductant and catalyst was selected from screening test. Experiments about the concentrations of reactant and $H_2O$ and the effect of temperature were carried out. Hydrocarbons with double bond such as propylene and so on were more reactive than any other reductants in plasma/catalyst condition. Photocatalyst, especially hombikat >$TiO_2$ with the largest surface area among the catalysts tested, showed the highest DeNOx efficiency in plasma/catalyst reaction. As the concentration of $H_2O$ increased, the removal of NO was enhanced. The increased concentration of >$O_2$ promoted the reaction of NO which was oxidized to$NO_2$.

• 한국결정성장학회지
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• 제11권5호
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• pp.231-237
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• 2001

Etch rates up to 120 nm/min for $Ta_{2}O_{5}$ were achieved in both $SF_{6}/Ar$ and $Cl_{2}/Ar$ discharges. The effect of ultraviolet (UV) light illumination during ICP etching on $Ta_{2}O_{5}$ etch rate in those plasma chemistries was examined and UV illumination was found to produce significant enhancements in $Ta_{2}O_{5}$ etch rates most likely due to photoassisted desorption of the etch products. The effects of ion flux, ion energy, and plasma composition on (Ba, Sr)$TiO_3$ etch rate were examined and maximum etch rate ~90 nm/min was achieved in $Cl_{2}/Ar$ ICP discharges while $CH_{4}/H_{2}/Ar$ chemistry produced extremely low etch rates (${\leq}10\;nm/min$) under all conditions.

• Bulletin of the Korean Chemical Society
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• 제33권7호
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• pp.2309-2314
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• 2012

Ag deposited N-$TiO_2$ composite nanoparticles were prepared via $NH_3$ plasma treatment. X-ray diffraction, UV-vis spectroscopy, photoluminescence, and X-ray photoelectron spectroscopy were used to characterize the prepared $TiO_2$ samples. The plasma treatment did not change the phase composition and particle sizes of $TiO_2$ samples, but extended its absorption edges to the visible light region. The photocatalytic activities were tested in the degradation of an aqueous solution of a reactive dyestuff, methylene blue, under visible light. The photocatalytic activities of Ag deposited N-$TiO_2$ composite nanoparticles were much higher than Ag-$TiO_2$, N-$TiO_2$, and P25. A possible mechanism for the photocatalysis was proposed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1147-1149
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• 1993

ZnO/$SnO_2$:F bilayer films have been prepared by pyrosol deposition method to develop optimum transparent electrode for use in amorphous silicon solar cells. The solution for $SnO_2:F$ film was composed of $SnCl_4{\cdot}5H_2O,\;NH_4F,\;CH_3OH$ and HCl, and ZnO films have been deposited on the $SnO_2:F$ films by using the solution of $ZnO(CH_3COO){_2}{\cdot}2H_2O,\;H_2O\;and\;CH_3OH$. These films have been investigated the variation of electrical and optical properties under the hydrogen plasma exposure. The sheet resistance of the $SnO_2:F$ film was sharply increased and its transmittance was decreased with the blackish effect after plasma treatment. However, the ZnO/$SnO_2:F$ bilayer film was shown hydrogen plasma durability because the electrical and optical properties was almost unchanged more then 60 seconds exposure time.

• 한국재료학회지
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• 제30권7호
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• pp.359-368
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• 2020

This study is aimed at improving the plasma resistance of Al₂O₃ ceramics on which plasma resistant YAS(Y₂O₃-Al₂O₃-SiO₂) frit is melt-coated using a simple heat-treatment process. For this purpose, the results of phase analysis and microstructural observations of the prepared YAS frits and the coating layers on the Al₂O₃ ceramics according to the batch compositions are compared and discussed with regard to the results of plasma resistance test. The prepared YAS frits consist of crystalline or amorphous or co-existing crystalline and amorphous phases according to the batch compositions, depending on the role and content of each raw material. The prepared YAS frit is melt-coated on the densely sintered Al₂O₃ ceramics, resulting in a dense coating layer with a thickness of at least ~ 80 ㎛. The YAS coating layer consists of crystalline YAG(Y₃Al₅O₁₂), Y₂Si₂O₇, and Al₂O₃ phases, and YAS glass phase. Plasma resistance of YAS coated Al₂O₃ ceramics is strongly dependent on the content of the YAG(Y₃Al₅O₁₂) and Y₂Si₂O₇ crystalline phases in the coating layer, especially on the content of the YAG phase. Comparing the weight loss of YAS coating ceramics with values obtained for commercial Y₂O₃, Al₂O₃, and quartz ceramics, the plasma resistance of the YAS coating ceramics is 6 times higher than that of quartz, 2 times higher than that of Al₂O₃, and 50 % of the resistance of Y₂O₃.

• 한국세라믹학회지
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• 제46권4호
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• pp.385-391
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• 2009

Need for plasma resistant ceramic materials has been continuously increased in semiconductor and display industry requiring plasma processing to realize ultra fine circuit process. Among promising candidates, alumina ceramics have still some advantages with respect to its economic aspect. In this study, fabrication of plasma resistant alumina ceramics was tried, and its processing optimization was also aimed. Careful processing control and thereby uniform microstructure of $Al_2O_3$ gave rise to enhanced plasma resistance, even comparable to market-governing commercial $Al_2O_3$. A further study is needed concerning ${\beta}-Al_2O_3$ materials system, presumably playing a decisive role in decreasing plasma resistance of $Al_2O_3$ ceramics.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.78-78
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• 2013

Recently, many platinoid metals like platinum and ruthenium have been used as an electrode of microelectronic devices because of their low resistivity and high work-function. However the material cost of Ru is very expensive and it usually takes long initial nucleation time on SiO2 during chemical deposition. Therefore many researchers have focused on how to enhance the initial growth rate on SiO2 surface. There are two methods to deposit Ru film with atomic layer deposition (ALD); the one is thermal ALD using dilute oxygen gas as a reactant, and the other is plasma enhanced ALD (PEALD) using NH3 plasma as a reactant. Generally, the film roughness of Ru film deposited by PEALD is smoother than that deposited by thermal ALD. However, the plasma is not favorable in the application of high aspect ratio structure. In this study, we used a bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] as a metal organic precursor for both thermal and plasma enhanced ALDs. In order to reduce initial nucleation time, we use several methods such as Ar plasma pre-treatment for PEALD and usage of sacrificial RuO2 under layer for thermal ALD. In case of PEALD, some of surface hydroxyls were removed from SiO2 substrate during the Ar plasma treatment. And relatively high surface nitrogen concentration after first NH3 plasma exposure step in ALD process was observed with in-situ Auger electron spectroscopy (AES). This means that surface amine filled the hydroxyl removed sites by the NH3 plasma. Surface amine played a role as a reduction site but not a nucleation site. Therefore, the precursor reduction was enhanced but the adhesion property was degraded. In case of thermal ALD, a Ru film was deposited from Ru precursors on the surface of RuO2 and the RuO2 film was reduced from RuO2/SiO2 interface to Ru during the deposition. The reduction process was controlled by oxygen partial pressure in ambient. Under high oxygen partial pressure, RuO2 was deposited on RuO2/SiO2, and under medium oxygen partial pressure, RuO2 was partially reduced and oxygen concentration in RuO2 film was decreased. Under low oxygen partial pressure, finally RuO2 was disappeared and about 3% of oxygen was remained. Usually rough surface was observed with longer initial nucleation time. However, the Ru deposited with reduction of RuO2 exhibits smooth surface and was deposited quickly because the sacrificial RuO2 has no initial nucleation time on SiO2 and played a role as a buffer layer between Ru and SiO2.

• 환경위생공학
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• 제13권2호
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• pp.147-155
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• 1998

In this study, we prepared non-porous plasma membrane for having high permeability and selectivity and this membrane was deposited on the $Al_{2}O_{3}$ membrane by using $CHF_{3}$ & $SiH_{4}$ monomer. Also, we investigated for the permeation characteristics of the plasma polymer membrane by Ar plasma treatment. When the position of substrate was near cathode, the selectivity was increased with Ar plasma treatment time and rf-power. The pore size of $Al_{2}O_{3}$ membrane had an effect on the permeability and the position of substrate affected selectivity.

• 한국표면공학회지
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• 제29권5호
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• pp.357-362
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• 1996

Several applications of radio-frequency (RF) thermal plasma to film formation are reviewed. Three types of injection plasma processing (IPP) technique are first introduced for the deposition of materials. Those are thermal plasma chemical vapor deposition (CVD), plasma flash evaporation, and plasma spraying. Radio-frequency (RF) plasma and hybrid (combination of RF and direct current(DC)) plasma are next introduced as promising thermal plasma sources in the IPP technique. Experimental data for three kinds of processing are demonstrated mainly based on our recent researches of depositions of functional materials, such as high temperature semiconductor SiC and diamond, ionic conductor $ZrO_2-Y_2O_3$ and high critical temperature superconductor $YBa_2Cu_3O_7-x$. Special emphasis is given to thermal plasma flash evaporation, in which nanometer-scaled clusters generated in plasma flame play important roles as nanometer-scaled clusters as deposition species. A novel epitaxial growth mechanism from the "hot" clusters namely "hot cluster epitaxy (HCE)" is proposed.)" is proposed.osed.