• Progress in Superconductivity
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• v.8 no.1
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• pp.75-80
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• 2006

[ $Yb_2O_3$ ] films were successfully deposited on a cube-textured Ni and(100) $SrTiO_3$(STO) single crystal substrates by metal organic chemical vapor deposition(MOCVD) method using $H_2O$ vapor as an oxidant. $H_2O$ vapor was used in order to avoid the oxidation of Ni substrate. The working pressure and Ar flow rate were 10 Ton and 600 sccm, respectively. $Yb_2O_3$ films on STO were formed at high temperatures above $900^{\circ}C$. While XRD peaks from $Yb_2O_3$ were hardly detected at $900^{\circ}C$, the $Yb_2O_3$(400) texture was developed fur the films grown at deposition temperatures above $950^{\circ}C$. The AEM surface roughness of $Yb_2O_3$ film, grown on STO, was in the range of $6{\sim}10nm$ for the film deposited at $950^{\circ}C$ with a $H_2O$ vapor partial pressure of 5.5 Ton and deposition times of 3 and 5 mins. For cube-textured Ni substrate, both $Yb_2O_3$(222) and $Yb_2O_3$ (400) textures were developed textures at deposition temperatures above $850^{\circ}C$.

• Journal of the Korean institute of surface engineering
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• v.31 no.3
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• pp.171-176
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• 1998

Transparent conducting ITO (Indium Tin Oxide) thin films were prepared on soda lime glass by reactive dc magnetron sputtering mothod. The maaterial properties were measured by the X-ray diffraction meter (XRD) and atomic force microscopy (AFM) scanning. As a resuIts, the (400) park for $O_2 gas rate 2% grows uniquely as the preferred orientaon. However, the (400) peak exists at $O_2 gas rate 5% as well as the (222) peak appears abruptly as the main orietation. Both <100> and <111> grain alignments are consisted simultaneously in the XRE pattern of ITO thin films. The electrical charcteristics were esimated by the electrical resistivity, optical transmission, and Hall mobillty, ect. The resistivity of ITO thin film deposited at 4cm from the substrate center is increased from $2\times10^-4$ to $8\times10^-4\Omega$cm as a function of $O_2$ gas pressure (0~5%). The optical transmission curves with a rising of $O_2$ gas rate become shifted into longer wavelength range.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.304-308
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• 2012

Transparent thin film transistors (TTFT) were fabricated using the rf magnetron sputtered ZnO-$SnO_2$ films as active layers. A ceramic target whose Zn atomic ratio to Sn is 2:1 was employed for the deposition of ZnO-$SnO_2$ films. To study the post-annealing effects on the properties of TTFT, ZnO-$SnO_2$ films were annealed at $200^{\circ}C$ or $400^{\circ}C$ for 5 min before In deposition for source and drain electrodes. Oxygen was added into chamber during sputtering to raise the resistivity of ZnO-$SnO_2$ films. The effects of oxygen addition on the properties of TTFT were also investigated. 100 nm $Si_3N_4$ film grown on 100 nm $SiO_2$ film was used as gate dielectrics. The mobility, $I_{on}/I_{off}$, interface state density etc. were obtained from the transfer characteristics of ZnO-$SnO_2$ TTFTs.

• Journal of Sensor Science and Technology
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• v.3 no.2
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• pp.40-49
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• 1994

Potentiometric cell oxygen sensors using $CaF_{2}$ were fabricated for monitering the oxygen partial pressure in the low temperature range ($300^{\circ}C{\sim}$500^{\circ}C). The disk type oxygen sensors consist of a reference electrode: Air($O_{2}:21%$)|Pt, a solid electrolyte $CaF_{2}$, and a sensing metel Pt electrode. And the change in open circuit emf of the disk type cell was about 45mV for the oxygen concentration range, $0.1%{\sim}10%$, at the cell temperature of $400^{\circ}C$. Also, the reference electrode incorporated type sensor showed the change of 40mV for 0.1% to 10% oxygen partial pressure range.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.909-913
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• 2002

The luminance and discharge characteristics of ac PDP may be significantly affected by a small amount of impurity gas in working gas. These impurity gases such as O$_2$, O, C and H$_2$ can be mixed in the manufacturing and /or discharge process. In this paper a small amount of impurity gas in acPDP are introduced quantitatively and the relationship between the amount of impurity gas and the luminance/discharge characteristics are investigated. The luminous efficiency decreased seriously with increase in the partial pressure of impurity gases, especially in H$_2$, O$_2$ and CO$_2$. Under the condition of the impurity gas ratio of 2${\times}$10$\^$-3/ for Ar, N2, H$_2$, CO$_2$ and O$_2$, the luminous efficiency decreased about 8%, 8%, 32%, 36% and 50%, respectively.

• The Korean Journal of Ceramics
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• v.4 no.4
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• pp.387-393
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• 1998

The formation of titanium diboride ($TiB_2$ ) via the reduction of $TiO_2$ with boric oxide and carbon was studied in a partially reducing atmosphere of argon mixed with 4 vol.%H2. The effect of reaction time, temperature, partial pressure of nitrogen and $TiO_2/B_2_O3$ stoichiometric ratio on the reducibility of oxides has been studied. The phases formed were analysed by using X-ray rowder diffraction and scanning sosctron microscopic techniques. In this paper, we also investigated the presence of $CaC_2$ as a reducing agent on the reducibility of oxide mixtures and on the Ti-B-C-Ca-O phase equilibria. The morphology of $TiB_2$ formed in the presence of $CaC_2$ is compared with the microstructure of $TiB_2$ formed as a consequence of carbothermic reduction. The observed variation in $TiB_2$ crystals formed is also explained.

• Bulletin of the Korean Chemical Society
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• v.9 no.1
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• pp.21-24
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• 1988

The electrical conductivitv of the system $ThO_2-Ho_2O_3$ was measured in the temperature range 600-$1100^{\circ}C$ and $Po_2$range $10^{-5}-2{\times}10^{-1}$ atm. The mean value of activation energy was 1.45 eV. The observed conductivity dependence on $Po_2$ was ${Po_2}^{1/4}$ at $Po_2$'s above $10^{-3}$ atm and was independent on oxygen partial pressure at $Po_2$'s below $10^{-3}$ atm. It is suggested that these dependences are due to a mixed ionic plus electron hole conduction by Vo defect.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.537-544
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• 2001

Anatase $TiO_2$thin films as a photocatalyst were prepared by the reactive magnetron sputtering process. The $TiO_2$thin films were deposited on Si substrates under the various conditions : oxygen partial pressure, working pressure, sputtering time, and D.C. power. The photocatalystic degradation of $TiO_2$thin film have been studied to examine the contribution of surface morphology and crystallinity. The thin films with a good crystallinity or a rough surface showed a high photocatalytic degradation rate on phenol and E.coli 078 experiment. Compared with that of only UV radiation, the photocatalytic efficiency of $TiO_2$thin film under the UV radiation and the $O_2$ flow increased. We found that the crystallity and the morphology were the important factors on the photocatalytic efficiency of TiO$_2$thin film.

• Progress in Superconductivity
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• v.8 no.1
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• pp.71-74
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• 2006

High $J_c$ over 1 $MA/cm^2$ YBCO film has been successfully prepared using nitrate precursors by spray pyrolysis method. Aerosol drolpets generated using a concentric spray nozzle were directly sprayed on a $LaAlO_3$(100) single crystal substrate. The cation ratio of precursor solution was Y:Ba:Cu=1:2.65:1.35. The distance between nozzle and substrate was 15 cm. Deposition temperature was ranging from $750^{\circ}C\;to\;800^{\circ}C$. Deposition pressure was 100 Torr, and oxygen partial pressure was varied from 10 Torr to 50 Torr. The microstructure, phase formation, texture development and superconducting properties of deposited films were largely changed with oxygen partial pressure. Deposited films showed a texture with(001) planes parallel to substrate plane. High quality film was obtained when film was deposited at $760^{\circ}C$ with an oxygen partial pressure of 30 Torr. The critical current density($J_c$) of the YBCO film was 1.75 $MA/cm^2$ at 77 K and self-field.

• Journal of the Mineralogical Society of Korea
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• v.16 no.2
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• pp.161-169
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• 2003

A phase transformation study on a synthetic amorphous diopside, $(Ca,Mg)SiO_3$has been carried out up to ∼30 GPa, and ∼$1000^{\circ}C$ using a diamond anvil cell and YAG laser heating system, respectively. A starting amorphous material shows a direct transition to cubic $(Ca,Mg)SiO_3$perovskite at high pressure, which contradicts to the crystalline diopside phase transformation sequence disproportionating into mixtures of the orthorhombic$ MgSiO_3$perovskite and the cubic $CaSiO_3$perovskite phases. This discrepancy might be due to the different starting materials as well as the temperature variations at each specific experiment performed. The present phase transfor mation sequence would modify the mineralogical assemblage in the Earth transition region and the lower mantle depending upon the pressure, temperature and the oxygen partial pressure.